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公开(公告)号：US20140120264A1
公开(公告)日：2014-05-01
申请号：US14128109
申请日：2012-06-07
IPC分类号： B05C11/10
CPC分类号： B05C11/1039 , C23C18/1619 , C23C18/1632 , C23C18/165 , C23C18/168 , C23C18/1682 , C23C18/1683 , C23C18/32
摘要： A plating apparatus 20 has a substrate holding/rotating device 110 configured to hold and rotate a substrate 2 and a plating liquid supplying device 30 configured to supply a plating liquid 35 onto the substrate 2. The plating liquid supplying device 30 has a supply tank 31 configured to store therein the plating liquid 35 to be supplied onto the substrate 2, a discharge nozzle 32 configured to discharge the plating liquid 35 onto the substrate 2 and a plating liquid supplying line 33 through which the plating liquid 35 within the supply tank 31 is supplied into the discharge nozzle 32. Further, an ammonia gas storage unit 170 is connected to the supply tank 31, and a concentration of an ammonia component within the plating liquid 35 stored in the supply tank 31 can be maintained within a preset target range.
摘要翻译： 电镀装置20具有：基板保持旋转装置110，被配置为保持和旋转基板2;以及电镀液供给装置30，其被配置为将电镀液体35供给到基板2上。电镀液供给装置30具有供给槽31 被配置为在其中存储供给到基板2上的镀液35，将镀液33排出到基板2上的排出喷嘴32和供给槽31内的镀液35通过该电镀液供给路33 供给到排出喷嘴32.此外，氨气体收容部170与供给罐31连接，能够将储存在供给槽31内的镀液35内的氨成分浓度维持在预先设定的目标范围内。
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公开(公告)号：US09421569B2
公开(公告)日：2016-08-23
申请号：US13981124
申请日：2012-01-13
IPC分类号： B05C5/00 , B05C9/14 , H01L21/3205 , B05B7/16 , C23C18/16 , H01L21/288 , B05D1/02 , C25D17/00 , H01L21/67 , G03F7/16
CPC分类号： B05C5/001 , B05D1/02 , C23C18/1614 , C23C18/1619 , C23C18/1676 , C23C18/168 , C25D17/001 , G03F7/162 , H01L21/288 , H01L21/67017
摘要： A plating apparatus includes a substrate holding/rotating device that holds/rotates a substrate; and a plating liquid supplying device that supplies a plating liquid onto the substrate. The plating liquid supplying device includes a supply tank that stores the plating liquid; a discharge nozzle that discharges the plating liquid onto the substrate; and a plating liquid supplying line through which the plating liquid of the supply tank is supplied into the discharge nozzle. Further, a first heating device is provided at either one of the supply tank and the plating liquid supplying line of the plating liquid supplying device, and heats the plating liquid to a first temperature. Furthermore, a second heating device is provided at the plating liquid supplying line between the first heating device and the discharge nozzle, and heats the plating liquid to a second temperature equal to or higher than the first temperature.
摘要翻译： 电镀装置包括：保持/旋转基板的基板保持/旋转装置; 以及将电镀液体供给到基板上的电镀液供给装置。 电镀液供给装置包括：储存电镀液的供给槽; 排出喷嘴，其将所述电镀液体排出到所述基板上; 以及电镀液体供给管路，供给槽的镀液通过该供给线供给到排出喷嘴。 此外，第一加热装置设置在电镀液供给装置的供给罐和电镀液供给管线中的任一个处，并将电镀液加热至第一温度。 此外，在第一加热装置和排出喷嘴之间的电镀液供给管线处设置第二加热装置，并将镀液加热到等于或高于第一温度的第二温度。
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3.发明申请公开(公告)号：US20140302242A1
公开(公告)日：2014-10-09
申请号：US13881431
申请日：2011-08-24
CPC分类号： B05D7/50 , B05B12/04 , B05B12/14 , B05D1/02 , C23C18/1632 , C23C18/1651 , C23C18/31 , C23C18/54 , C25D17/001
摘要： A plating apparatus 1 can perform plating processes by supplying plating liquids onto a surface of a substrate 2. The plating apparatus 1 includes a substrate rotating holder configured to hold and rotate the substrate 2; plating liquid supply units 29 and 30 configured to supply different kinds of plating liquids onto the surface of the substrate 2; a plating liquid drain unit 31 configured to drain out the plating liquids dispersed from the substrate 2 depending on the kinds of the plating liquids; and a controller 32 configured to control the substrate rotating holder 25, the plating liquid supply units 29 and 30, the plating liquid drain unit 31. While the substrate 2 is held and rotated, the plating processes are performed on the surface of the substrate 2 in sequence by supplying the different kinds of the plating liquids onto the surface of the substrate 2.
摘要翻译： 电镀装置1可以通过将电镀液供给到基板2的表面来进行电镀处理。电镀装置1包括：基板旋转保持器，其构造成保持和旋转基板2; 电镀液供给单元29,30，被配置为向基板2的表面供给不同种类的电镀液; 电镀液排出单元31，其被配置为根据电镀液的种类排出从基板2分散的镀液; 以及控制器32，被配置为控制基板旋转保持器25，电镀液供给单元29和30，电镀液排出单元31.在保持基板2并旋转的同时，在基板2的表面上进行电镀处理 依次通过将不同种类的电镀液体供给到基板2的表面上。
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公开(公告)号：US20140148006A1
公开(公告)日：2014-05-29
申请号：US13879175
申请日：2011-08-31
申请人： Takashi Tanaka , Yusuke Saito , Mitsuaki Iwashita
发明人： Takashi Tanaka , Yusuke Saito , Mitsuaki Iwashita
IPC分类号： H01L21/67 , H01L21/288
CPC分类号： H01L21/6723 , C23C18/1619 , C23C18/1653 , C23C18/1675 , C23C18/1676 , C23C18/168 , C23C18/50 , H01L21/288
摘要： A liquid treatment apparatus of continuously performing a plating process on multiple substrates includes a temperature controlling container for accommodating a plating liquid; a temperature controller for controlling a temperature of the plating liquid in the temperature controlling container; a holding unit for holding the substrates one by one at a preset position; a nozzle having a supply hole through which the temperature-controlled plating liquid in the temperature controlling container is discharged to a processing surface of the substrate; a pushing unit for pushing the temperature-controlled plating liquid in the temperature controlling container toward the supply hole of the nozzle; and a supply control unit for controlling a timing when the plating liquid is pushed by the pushing unit. The temperature controller controls the temperature of the plating liquid in the temperature controlling container based on the timing when the plating liquid is pushed by the pushing unit.
摘要翻译： 在多个基板上连续进行电镀处理的液体处理装置包括：容纳电镀液的温度控制容器; 温度控制器，用于控制温度控制容器中的电镀液的温度; 保持单元，用于将预定位置一个接一个地保持; 具有供给孔的喷嘴，所述温度控制容器中的所述温度控制电镀液通过所述供给孔排出到所述基板的处理面; 推压单元，用于将温度控制容器中的温度控制电镀液朝向喷嘴的供给孔推动; 以及供应控制单元，用于控制当推动单元推动电镀液体时的定时。 温度控制器基于由推动单元推动电镀液的时机，控制温度控制容器中的电镀液的温度。
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5.发明申请SUPPLY APPARATUS, SEMICONDUCTOR MANUFACTURING APPARATUS AND SEMICONDUCTOR MANUFACTURING METHOD 审中-公开供应设备，半导体制造设备和半导体制造方法公开(公告)号：US20100015791A1
公开(公告)日：2010-01-21
申请号：US12405620
申请日：2009-03-17
申请人： Takashi Tanaka , Yusuke Saito , Mitsuaki Iwashita
发明人： Takashi Tanaka , Yusuke Saito , Mitsuaki Iwashita
IPC分类号： H01L21/3205 , B05C5/00 , B05B7/16
CPC分类号： C25D17/001 , H01L21/288 , H01L21/76849
摘要： A film of uniform thickness can be formed on the entire surface of a substrate. A processing solution supply apparatus includes: a nozzle provided with a supply hole for discharging a plating solution toward a processing surface of a substrate held in a substantially horizontal direction; a temperature controller for accommodating therein the plating solution in an amount necessary for processing a preset number of substrates, for controlling a temperature of the accommodated plating solution up to a preset temperature; a heat insulator disposed between the nozzle and the temperature controller, for maintaining the plating solution, whose temperature has been controlled by the temperature controller, at the preset temperature; and a transporting mechanism for transporting the plating solution, whose temperature has been controlled up to the preset temperature by the temperature controller, toward the supply hole of the nozzle via the heat insulator.
摘要翻译： 可以在基板的整个表面上形成均匀厚度的膜。 一种处理液供给装置，包括：喷嘴，具有用于向保持在大致水平方向的基板的处理面排出电镀液的供给孔; 温度控制器，用于在其中容纳处理预设数量的基板所需的量的电镀液，用于将所容纳的电镀液的温度控制到预设温度; 设置在喷嘴和温度控制器之间的隔热件，用于将温度由温度控制器控制的电镀液保持在预设温度; 以及传送机构，其通过温度控制器将温度被控制到预设温度的电镀液通过隔热件输送到喷嘴的供给孔。
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6.发明授权公开(公告)号：US09731322B2
公开(公告)日：2017-08-15
申请号：US13881431
申请日：2011-08-24
CPC分类号： B05D7/50 , B05B12/04 , B05B12/14 , B05D1/02 , C23C18/1632 , C23C18/1651 , C23C18/31 , C23C18/54 , C25D17/001
摘要： A plating apparatus 1 can perform plating processes by supplying plating liquids onto a surface of a substrate 2. The plating apparatus 1 includes a substrate rotating holder configured to hold and rotate the substrate 2; plating liquid supply units 29 and 30 configured to supply different kinds of plating liquids onto the surface of the substrate 2; a plating liquid drain unit 31 configured to drain out the plating liquids dispersed from the substrate 2 depending on the kinds of the plating liquids; and a controller 32 configured to control the substrate rotating holder 25, the plating liquid supply units 29 and 30, the plating liquid drain unit 31. While the substrate 2 is held and rotated, the plating processes are performed on the surface of the substrate 2 in sequence by supplying the different kinds of the plating liquids onto the surface of the substrate 2.
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公开(公告)号：US08206785B2
公开(公告)日：2012-06-26
申请号：US12405597
申请日：2009-03-17
CPC分类号： H01L21/288 , C23C18/1628 , C23C18/1669 , H01L21/6715 , H01L21/76849
摘要： A cap metal forming method capable of obtaining a uniform film thickness on the entire surface of a substrate is provided. The method for forming a cap metal on a copper wiring formed on a processing target surface of a substrate includes: holding the substrate so as to be rotatable; rotating the substrate in a processing target surface direction of the substrate; locating an end portion of an agitation member so as to face the processing target surface of a periphery portion of the substrate with a preset gap maintained therebetween; supplying a plating processing solution onto the processing target surface; and stopping the supply of the plating processing solution and moving the agitation member such that the end portion of the agitation member is separated away from the processing target surface of the substrate.
摘要翻译： 提供能够在基板的整个表面上获得均匀的膜厚度的盖金属成形方法。 在形成在基板的加工对象面上的铜布线上形成盖金属的方法包括：保持基板以可旋转; 在所述基板的处理对象面方向上旋转所述基板; 将搅拌构件的端部定位成面对保持在其间的预设间隙的基板的周边部分的处理目标表面; 将电镀处理液供给到所述加工对象面上; 停止电镀处理液的供给，使搅拌部件移动，使搅拌部件的端部与基板的加工对象面分离。
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公开(公告)号：US08937014B2
公开(公告)日：2015-01-20
申请号：US13879175
申请日：2011-08-31
申请人： Takashi Tanaka , Yusuke Saito , Mitsuaki Iwashita
发明人： Takashi Tanaka , Yusuke Saito , Mitsuaki Iwashita
IPC分类号： H01L21/44 , H01L21/67 , C23C18/16 , H01L21/288
CPC分类号： H01L21/6723 , C23C18/1619 , C23C18/1653 , C23C18/1675 , C23C18/1676 , C23C18/168 , C23C18/50 , H01L21/288
摘要： A liquid treatment apparatus of continuously performing a plating process on multiple substrates includes a temperature controlling container for accommodating a plating liquid; a temperature controller for controlling a temperature of the plating liquid in the temperature controlling container; a holding unit for holding the substrates one by one at a preset position; a nozzle having a supply hole through which the temperature-controlled plating liquid in the temperature controlling container is discharged to a processing surface of the substrate; a pushing unit for pushing the temperature-controlled plating liquid in the temperature controlling container toward the supply hole of the nozzle; and a supply control unit for controlling a timing when the plating liquid is pushed by the pushing unit. The temperature controller controls the temperature of the plating liquid in the temperature controlling container based on the timing when the plating liquid is pushed by the pushing unit.
摘要翻译： 在多个基板上连续进行电镀处理的液体处理装置包括：容纳电镀液的温度控制容器; 温度控制器，用于控制温度控制容器中的电镀液的温度; 保持单元，用于将预定位置一个接一个地保持; 具有供给孔的喷嘴，所述温度控制容器中的所述温度控制电镀液通过所述供给孔排出到所述基板的处理面; 推压单元，用于将温度控制容器中的温度控制电镀液朝向喷嘴的供给孔推动; 以及供应控制单元，用于控制当推动单元推动电镀液体时的定时。 温度控制器基于由推动单元推动电镀液的时机，控制温度控制容器中的电镀液的温度。
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公开(公告)号：US20100075027A1
公开(公告)日：2010-03-25
申请号：US12405597
申请日：2009-03-17
IPC分类号： B05D3/12
CPC分类号： H01L21/288 , C23C18/1628 , C23C18/1669 , H01L21/6715 , H01L21/76849
摘要： A cap metal forming method capable of obtaining a uniform film thickness on the entire surface of a substrate is provided. The method for forming a cap metal on a copper wiring formed on a processing target surface of a substrate includes: holding the substrate so as to be rotatable; rotating the substrate in a processing target surface direction of the substrate; locating an end portion of an agitation member so as to face the processing target surface of a periphery portion of the substrate with a preset gap maintained therebetween; supplying a plating processing solution onto the processing target surface; and stopping the supply of the plating processing solution and moving the agitation member such that the end portion of the agitation member is separated away from the processing target surface of the substrate.
摘要翻译： 提供能够在基板的整个表面上获得均匀的膜厚度的盖金属成形方法。 在形成在基板的加工对象面上的铜布线上形成盖金属的方法包括：保持基板以可旋转; 在所述基板的处理对象面方向上旋转所述基板; 将搅拌构件的端部定位成面对保持在其间的预设间隙的基板的周边部分的处理目标表面; 将电镀处理液供给到所述加工对象面上; 停止电镀处理液的供给，使搅拌部件移动，使搅拌部件的端部与基板的加工对象面分离。
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公开(公告)号：US20100062159A1
公开(公告)日：2010-03-11
申请号：US12405468
申请日：2009-03-17
申请人： Takashi Tanaka , Yusuke Saito , Mitsuaki Iwashita
发明人： Takashi Tanaka , Yusuke Saito , Mitsuaki Iwashita
IPC分类号： B05D3/04
CPC分类号： C23C18/1628 , C23C18/1632 , C23C18/1678 , C23C18/1682 , C23C18/31 , C23C18/38
摘要： A cap metal forming method capable of obtaining a uniform film thickness on the entire surface of a substrate is provided. A method for forming a cap metal on a processing surface of a substrate provided with two or more regions having different water-repellent properties, includes: holding the substrate horizontally by a rotatable holding mechanism installed in an inner chamber; supplying a gas between the inner chamber and an outer chamber covering the inner chamber via a gas supply hole provided in a top surface of the outer chamber; forming a pressure gradient between the inner chamber and the outer chamber; and supplying a plating solution to a preset position on the processing surface of the substrate after a pressure of the gas inside the inner chamber reaches a preset value so as to form the cap metal on at least one of the regions.
摘要翻译： 提供能够在基板的整个表面上获得均匀的膜厚度的盖金属成形方法。 一种在具有不同斥水性的两个以上的区域的基板的加工面上形成盖金属的方法，其特征在于，包括：通过安装在内室中的旋转保持机构水平地保持基板; 通过设置在所述外室的上表面中的气体供给孔，在所述内室和覆盖所述内室的外室之间供给气体; 在所述内室和所述外室之间形成压力梯度; 以及在所述内室中的气体的压力达到预设值之后，将所述电镀溶液供应到所述基板的处理表面上的预定位置，以便在所述至少一个所述区域上形成所述盖金属。
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