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10 条记录 (耗时 0.016 秒)

    Programmable controller
    2.
    发明授权
    Programmable controller 失效

    公开(公告)号：US06639776B2

    公开(公告)日：2003-10-28

    申请号：US09986590

    申请日：2001-11-09

    申请人： Eiichi Sudou ,  Kazunori Umeda ,  Masayuki Wada

    发明人： Eiichi Sudou ,  Kazunori Umeda ,  Masayuki Wada

    IPC分类号： H02H300

    CPC分类号： G05B19/054 ,  G05B19/0425 ,  G05B2219/21154

    摘要： A programmable controller has an overcurrent detection portion, an overcurrent indication portion and a transistor for interrupting a load current at the time of occurrence of an overcurrent are provided in an output circuit portion of the programmable controller. An overcurrent detection resistor is provided in the output transistor circuit, and a detected voltage across the resistor is compared with a reference voltage in an overcurrent detection circuit to judge an overcurrent. If an overcurrent is recognized, the overcurrent indication portion is operated, and the base current of the output transistor circuit is controlled to perform protection of the output circuit from the overcurrent. Accordingly, when an overcurrent is flowing and an input signal is in ON state, the output transistor is turned OFF automatically and, the overcurrent state is showed to a user.

    Programmable controller
    4.
    发明授权
    Programmable controller 失效
    可编程控制器

    公开(公告)号：US06556405B2

    公开(公告)日：2003-04-29

    申请号：US09761183

    申请日：2001-01-18

    申请人： Eiichi Sudou ,  Kazunori Umeda ,  Masayuki Wada

    发明人： Eiichi Sudou ,  Kazunori Umeda ,  Masayuki Wada

    IPC分类号： H02H300

    CPC分类号： G05B19/054 ,  G05B19/0425 ,  G05B2219/21154

    摘要： A programmable controller has an overcurrent detection portion, an overcurrent indication portion and a transistor for interrupting a load current at the time of occurrence of an overcurrent are provided in an output circuit portion of the programmable controlled. An overcurrent detection resistor is provided in the output transistor circuit, and a detected voltage across the resistor is compared with a reference voltage in an overcurrent detection circuit to judge an overcurrent. If an overcurrent is recognized, the overcurrent indication portion is operated, and the base current of the output transistor circuit is controlled to perform protection of the output circuit from the overcurrent. Accordingly, when an overcurrent is flowing and an input signal is in ON state, the output transistor is turned OFF automatically and, the overcurrent state is showed to a user.

    摘要翻译： 可编程控制器具有过电流检测部分，在可编程控制的输出电路部分中提供过电流指示部分和用于在发生过电流时中断负载电流的晶体管。 在输出晶体管电路中设置过电流检测电阻，将过电流检测电路中的电阻两端的检测电压与基准电压进行比较，判断过电流。 如果识别到过电流，则过电流指示部分被操作，并且控制输出晶体管电路的基极电流，以对输出电路进行过电流的保护。 因此，当过电流流动并且输入信号处于导通状态时，输出晶体管自动关断，向用户显示过电流状态。

    Self-lubricating wear-resistant composite materials
    5.
    发明授权
    Self-lubricating wear-resistant composite materials 失效
    自润滑耐磨复合材料

    公开(公告)号：US3956146A

    公开(公告)日：1976-05-11

    申请号：US489758

    申请日：1974-07-18

    申请人： Yuko Tsuya ,  Kazunori Umeda ,  Hirofumi Shimura

    发明人： Yuko Tsuya ,  Kazunori Umeda ,  Hirofumi Shimura

    IPC分类号： C22C1/05 ,  C22C9/00 ,  F16C33/12 ,  C10M5/00 ,  C10M7/00

    CPC分类号： F16C33/12 ,  F16C2204/12

    摘要： Self-lubricating wear-resistant composite materials are produced by blending a metal powder matrix with a combination of molybdenum disulfide and tungsten disulfide powders, compression-molding the blend and then sintering the molding at 800.degree. to 1000.degree.C. When the combination of molybdenum disulfide and tungsten disulfide is blended with a metal powder matrix as described above, the molybdenum disulfide reacts with the metal powder matrix and consequently reinforces the metal matrix and the tungsten disulfide is dispersed as a lubricant element in the resultant composite material, giving rise to a composite material excellent in mechanical strength and lubricating property.

    摘要翻译： 自润滑耐磨复合材料通过将金属粉末基质与二硫化钼和二硫化钨粉末的组合进行共混而制得，将共混物压缩成型，然后在800℃至1000℃下烧结成型。当钼 二硫化物和二硫化钨与如上所述的金属粉末基体共混，二硫化钼与金属粉末基质反应，从而加强金属基质，并且二硫化钨作为润滑剂元素分散在所得复合材料中，产生 复合材料机械强度和润滑性能优异。

    Position error evaluation method of moving device and method of improving movement accuracy based on evaluation results thereof
    7.
    发明授权
    Position error evaluation method of moving device and method of improving movement accuracy based on evaluation results thereof 失效

    公开(公告)号：US06694634B2

    公开(公告)日：2004-02-24

    申请号：US10110740

    申请日：2002-07-29

    申请人： Hisayoshi Sato ,  Kazunori Umeda

    发明人： Hisayoshi Sato ,  Kazunori Umeda

    IPC分类号： G01B5004

    CPC分类号： B82Y15/00 ,  B23Q17/24 ,  B25J9/1669 ,  G01B21/042 ,  G01B21/045

    摘要： Disclosed is a position error evaluating method of a moving device, which includes the following steps. Specifically, in a moving device which moves a movable body in two axial directions or in three axial directions orthogonal to each other, a straightness error curve indicating a state of change in a position error of the movable body along a uniaxial direction out of predetermined two axial directions is obtained by a sequential two-point method, the position error being related to a direction orthogonal to the predetermined two axial directions out of the biaxial or three axial directions. Then, the above step is repeated for the other uniaxial direction out of the two axial directions. Subsequently, straightness error curves indicating a state of change in a position error of the movable body along the other uniaxial direction is obtained based on coordinate positions of both ends of a group of already obtained straightness error curves, the position error being related to the direction orthogonal to the predetermined two axial directions. The straightness error curves at the coordinate positions of the both ends are set as a boundary straightness error curve. Thereafter, based on the boundary straightness error curves, alignment of the group of straightness error curves is corrected, thereby obtaining an error surface. Lastly, in accordance with the error surface, a two-dimensional position error of the movable body on a planar surface including the predetermined two axes is evaluated, the two-dimensional position error being related to a direction orthogonal to the planar surface. According to this method, in evaluating the position error of the moving device, compared to the conventional method, adjustment takes less time, and automatic evaluation can be easily performed. Thus, accuracy of a measuring device can be easily maintained.

    Semiconductor device and method of manufacturing thereof
    10.
    发明授权
    Semiconductor device and method of manufacturing thereof 有权
    半导体装置及其制造方法

    公开(公告)号：US06727146B2

    公开(公告)日：2004-04-27

    申请号：US10288448

    申请日：2002-11-06

    申请人： Eiichi Murakami ,  Akio Nishida ,  Kazunori Umeda ,  Kousuke Okuyama ,  Toshiaki Yamanaka ,  Jiro Yugami ,  Shinichiro Kimura

    发明人： Eiichi Murakami ,  Akio Nishida ,  Kazunori Umeda ,  Kousuke Okuyama ,  Toshiaki Yamanaka ,  Jiro Yugami ,  Shinichiro Kimura

    IPC分类号： H01L218234

    CPC分类号： H01L27/10894 ,  H01L21/823412 ,  H01L21/823462 ,  H01L27/105 ,  H01L27/10873

    摘要： This semiconductor device manufacturing method comprises the steps of: forming a thick gate oxide film (thick oxide film) in a first region of a substrate, forming a thin gate oxide film (thin oxide layer) in a second region, and then, applying oxynitridation to these gate oxide films; forming gate electrodes to 1d on these gate oxide films; and implanting an ion that contains nitrogen or nitrogen atoms into at least one part of an interface between the hick gate oxide film (thick oxide film) and the substrate before or after the step of forming the gate electrodes, thereby forming a highly oxy-nitrided region. In this manner, in a semiconductor device in which there coexist a MISFET having a thin gate insulation film and a MISFET having a thick gate insulation film, hot carrier reliability of the MISFET having the thick gate insulation film is improved.

    摘要翻译： 该半导体器件制造方法包括以下步骤：在衬底的第一区域形成厚栅氧化膜（厚氧化物膜），在第二区域形成薄的栅极氧化膜（薄氧化物层），然后施加氧氮化 到这些栅氧化膜; 在这些栅极氧化膜上形成栅电极至1d; 以及在形成栅电极的步骤之前或之后，将含有氮或氮原子的离子注入到所述堰栅氧化膜（厚氧化物膜）和所述衬底之间的界面的至少一部分中，从而形成高度氧氮化 地区。 以这种方式，在并入具有薄栅极绝缘膜的MISFET和具有厚栅极绝缘膜的MISFET的半导体器件中，具有厚栅极绝缘膜的MISFET的热载流子可靠性得到改善。