公开(公告)号：US08072002B2

公开(公告)日：2011-12-06

申请号：US12382941

申请日：2009-03-26

申请人： Yuki Niyama ,  Seikoh Yoshida ,  Hiroshi Kambayashi ,  Takehiko Nomura ,  Masayuki Iwami ,  Shinya Ootomo

发明人： Yuki Niyama ,  Seikoh Yoshida ,  Hiroshi Kambayashi ,  Takehiko Nomura ,  Masayuki Iwami ,  Shinya Ootomo

IPC分类号： H01L29/66

CPC分类号： H01L29/2003 ,  H01L29/0843 ,  H01L29/42368 ,  H01L29/7786

摘要： A field effect transistor formed of a semiconductor of a III group nitride compound, includes an electron running layer formed on a substrate and formed of GaN; an electron supplying layer formed on the electron running layer and formed of AlxGa1-xN (0.01≦x≦0.4), the electron supplying layer having a band gap energy different from that of the electron running layer and being separated with a recess region having a depth reaching the electron running layer; a source electrode and a drain electrode formed on the electron supplying layer with the recess region in between; a gate insulating film layer formed on the electron supplying layer for covering a surface of the electron running layer in the recess region; and a gate electrode formed on the gate insulating film layer in the recess region. The electron supplying layer has a layer thickness between 5.5 nm and 40 nm.

摘要翻译： 由III族氮化物化合物的半导体形成的场效应晶体管包括形成在衬底上并由GaN形成的电子运行层; 电子供给层，形成在电子运行层上，由Al x Ga 1-x N（0.01＆nlE; x＆nlE; 0.4）形成，电子供给层的带隙能量与电子运行层的能隙不同，并且与具有 达到电子运行层的深度; 形成在电子供给层上的源电极和漏电极，其间具有凹陷区域; 在所述电子供给层上形成的用于覆盖所述凹部的电子运行层的表面的栅极绝缘膜层; 以及形成在所述凹部区域中的所述栅极绝缘膜层上的栅电极。 电子供给层的层厚在5.5nm至40nm之间。

公开(公告)号：US20100283083A1

公开(公告)日：2010-11-11

申请号：US12308401

申请日：2007-06-14

申请人： Yuki Niiyama ,  Shinya Ootomo ,  Tatsuyuki Shinagawa ,  Takehiko Nomura ,  Seikoh Yoshida ,  Hiroshi Kambayashi

发明人： Yuki Niiyama ,  Shinya Ootomo ,  Tatsuyuki Shinagawa ,  Takehiko Nomura ,  Seikoh Yoshida ,  Hiroshi Kambayashi

IPC分类号： H01L29/78 ,  H01L21/66

CPC分类号： H01L29/7802 ,  H01L29/0657 ,  H01L29/0847 ,  H01L29/0886 ,  H01L29/2003 ,  H01L29/267 ,  H01L29/41741 ,  H01L29/41766 ,  H01L29/42356 ,  H01L29/66606 ,  H01L29/66659 ,  H01L29/78 ,  H01L29/7813 ,  H01L29/7835

摘要： Provided is a normally-off field effect transistor using a III-nitride semiconductor. The transistor is provided with a III-nitride semiconductor layer grown on a substrate by including an acceptor and a donor; a gate insulating film which is formed on the III-nitride semiconductor layer to have a thickness to be at a prescribed threshold voltage based on the concentration of the acceptor and that of the donor; a gate electrode formed on the gate insulating film; a first source/drain electrode formed on the III-nitride semiconductor layer to one side of and separate from the gate electrode, directly or via a high dopant concentration region; and a second source/drain electrode formed away from the gate electrode and the first source/drain electrode, on or under the III-nitride semiconductor layer, directly or via a high dopant concentration region.

摘要翻译： 提供了使用III族氮化物半导体的常关场效应晶体管。 晶体管设置有通过包括受体和供体在衬底上生长的III族氮化物半导体层; 基于所述受主的浓度和所述供体的浓度，形成在所述III族氮化物半导体层上的厚度为规定阈值电压的栅极绝缘膜; 形成在栅极绝缘膜上的栅电极; 在III族氮化物半导体层上直接或经由高掺杂剂浓度区域形成在栅电极的一侧并与栅电极分离的第一源/漏电极; 以及在III族氮化物半导体层上或下方形成为远离栅电极和第一源/漏电极的第二源/漏电极，直接或经由高掺杂剂浓度区域。

公开(公告)号：US08093626B2

公开(公告)日：2012-01-10

申请号：US12308401

申请日：2007-06-14

申请人： Yuki Niiyama ,  Shinya Ootomo ,  Tatsuyuki Shinagawa ,  Takehiko Nomura ,  Seikoh Yoshida ,  Hiroshi Kambayashi

发明人： Yuki Niiyama ,  Shinya Ootomo ,  Tatsuyuki Shinagawa ,  Takehiko Nomura ,  Seikoh Yoshida ,  Hiroshi Kambayashi

IPC分类号： H01L29/78 ,  H01L21/66

CPC分类号： H01L29/7802 ,  H01L29/0657 ,  H01L29/0847 ,  H01L29/0886 ,  H01L29/2003 ,  H01L29/267 ,  H01L29/41741 ,  H01L29/41766 ,  H01L29/42356 ,  H01L29/66606 ,  H01L29/66659 ,  H01L29/78 ,  H01L29/7813 ,  H01L29/7835

摘要： Provided is a normally-off field effect transistor using a III-nitride semiconductor. The transistor is provided with a III-nitride semiconductor layer grown on a substrate by including an acceptor and a donor; a gate insulating film which is formed on the III-nitride semiconductor layer to have a thickness to be at a prescribed threshold voltage based on the concentration of the acceptor and that of the donor; a gate electrode formed on the gate insulating film; a first source/drain electrode formed on the III-nitride semiconductor layer to one side of and separate from the gate electrode, directly or via a high dopant concentration region; and a second source/drain electrode formed away from the gate electrode and the first source/drain electrode, on or under the III-nitride semiconductor layer, directly or via a high dopant concentration region.

摘要翻译： 提供了使用III族氮化物半导体的常关场效应晶体管。 晶体管设置有通过包括受体和供体在衬底上生长的III族氮化物半导体层; 基于所述受主的浓度和所述供体的浓度，形成在所述III族氮化物半导体层上的厚度为规定阈值电压的栅极绝缘膜; 形成在栅极绝缘膜上的栅电极; 在III族氮化物半导体层上直接或经由高掺杂剂浓度区域形成在栅电极的一侧并与栅电极分离的第一源/漏电极; 以及在III族氮化物半导体层上或下方形成为远离栅电极和第一源/漏电极的第二源/漏电极，直接或经由高掺杂剂浓度区域。

公开(公告)号：US20090242938A1

公开(公告)日：2009-10-01

申请号：US12382941

申请日：2009-03-26

申请人： Yuki Niiyama ,  Seikoh Yoshida ,  Masatoshi Ikada ,  Hiroshi Kambayashi ,  Takahiko Nomura ,  Masayuki Iwami ,  Shinya Ootomo

发明人： Yuki Niiyama ,  Seikoh Yoshida ,  Masatoshi Ikada ,  Hiroshi Kambayashi ,  Takahiko Nomura ,  Masayuki Iwami ,  Shinya Ootomo

IPC分类号： H01L29/778

CPC分类号： H01L29/2003 ,  H01L29/0843 ,  H01L29/42368 ,  H01L29/7786

摘要： A field effect transistor formed of a semiconductor of a III group nitride compound, includes an electron running layer formed on a substrate and formed of GaN; an electron supplying layer formed on the electron running layer and formed of AlxGal-xN (0.01≦x≦0.4), the electron supplying layer having a band gap energy different from that of the electron running layer and being separated with a recess region having a depth reaching the electron running layer; a source electrode and a drain electrode formed on the electron supplying layer with the recess region in between; a gate insulating film layer formed on the electron supplying layer for covering a surface of the electron running layer in the recess region; and a gate electrode formed on the gate insulating film layer in the recess region. The electron supplying layer has a layer thickness between 5.5 nm and 40 nm.

摘要翻译： 由III族氮化物化合物的半导体形成的场效应晶体管包括形成在衬底上并由GaN形成的电子运行层; 形成在电子运行层上并由Al x Ga 1-x N（0.01 <= x <= 0.4）形成的电子供给层，电子供给层具有与电子运行层的能隙不同的带隙能量，并且与凹陷区域分离 具有深度到达电子运行层的深度; 形成在电子供给层上的源电极和漏电极，其间具有凹陷区域; 在所述电子供给层上形成的用于覆盖所述凹部的电子运行层的表面的栅极绝缘膜层; 以及形成在所述凹部区域中的所述栅极绝缘膜层上的栅电极。 电子供给层的层厚在5.5nm至40nm之间。

公开(公告)号：US20090278172A1

公开(公告)日：2009-11-12

申请号：US12382010

申请日：2009-03-05

申请人： Shusuke Kaya ,  Seikoh Yoshida ,  Sadahiro Kato ,  Takehiko Nomura ,  Nariaki Ikeda ,  Masayuki Iwami ,  Yoshihiro Sato ,  Hiroshi Kambayashi ,  Yuki Niiyama ,  Masatoshi Ikeda

发明人： Shusuke Kaya ,  Seikoh Yoshida ,  Sadahiro Kato ,  Takehiko Nomura ,  Nariaki Ikeda ,  Masayuki Iwami ,  Yoshihiro Sato ,  Hiroshi Kambayashi ,  Yuki Niiyama ,  Masatoshi Ikeda

IPC分类号： H01L29/205

CPC分类号： H01L29/0847 ,  H01L29/0657 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/4236 ,  H01L29/42376 ,  H01L29/66462 ,  H01L29/7787

摘要： The field effect transistor includes a laminated structure in which a buffer layer, and an electron transporting layer (undoped GaN layer), and an electron supplying layer (undoped AlGaN layer) are laminated in sequence on a sapphire substrate. An npn laminated structure is formed on a source region of the electron supplying layer, and a source electrode is formed on the npn laminated structure. A drain electrode is formed in a drain region of the electron supplying layer, and an insulating film is formed in an opening region formed in the gate region. When a forward voltage greater than a threshold is applied to the gate electrode, an inversion layer is formed and the drain current flows. By changing a thickness and an impurity concentration of the p-type GaN layer, the threshold voltage can be controlled. The electrical field concentration between the gate electrode and the drain electrode is relaxed due to the drift layer, and voltage resistance improves.

摘要翻译： 场效应晶体管包括其中缓冲层和电子传输层（未掺杂的GaN层）和电子供应层（未掺杂的AlGaN层）依次叠置在蓝宝石衬底上的叠层结构。 在电子供给层的源极区域上形成npn层叠结构，在npn层叠结构上形成源电极。 在电子供给层的漏极区域中形成漏电极，并且在形成在栅极区域的开口区域中形成绝缘膜。 当向栅电极施加大于阈值的正向电压时，形成反型层，漏极电流流动。 通过改变p型GaN层的厚度和杂质浓度，可以控制阈值电压。 由于漂移层，栅极电极和漏电极之间的电场浓度被松弛，并且耐电压提高。

公开(公告)号：US20090140295A1

公开(公告)日：2009-06-04

申请号：US12292164

申请日：2008-11-13

申请人： Shusuke Kaya ,  Seikoh Yoshida ,  Sadahiro Kato ,  Takehiko Nomura ,  Nariaki Ikeda ,  Masayuki Iwami ,  Yoshihiro Sato ,  Hiroshi Kambayashi ,  Koh Li

发明人： Shusuke Kaya ,  Seikoh Yoshida ,  Sadahiro Kato ,  Takehiko Nomura ,  Nariaki Ikeda ,  Masayuki Iwami ,  Yoshihiro Sato ,  Hiroshi Kambayashi ,  Koh Li

IPC分类号： H01L29/737 ,  H01L21/28 ,  H01L21/265

CPC分类号： H01L29/7787 ,  H01L29/0611 ,  H01L29/2003 ,  H01L29/4175 ,  H01L29/66462

摘要： A GaN-based semiconductor device includes a silicon substrate; an active layer of a GaN-based semiconductor formed on the silicon substrate; a trench formed in the active layer and extending from a top surface of the active layer to the silicon substrate; a first electrode formed on an internal wall surface of the trench so that the first electrode extends from the top surface of the active layer to the silicon substrate; a second electrode formed on the active layer so that a current flows between the first electrode and the second electrode via the active layer; and a bottom electrode formed on a bottom surface of the silicon substrate. The first electrode is formed of a metal capable of being in ohmic contact with the silicon substrate and the active layer.

摘要翻译： GaN基半导体器件包括硅衬底; 形成在硅衬底上的GaN基半导体的有源层; 形成在有源层中并从有源层的顶表面延伸到硅衬底的沟槽; 形成在所述沟槽的内壁表面上的第一电极，使得所述第一电极从所述有源层的顶表面延伸到所述硅衬底; 形成在有源层上的第二电极，使得电流经由有源层在第一电极和第二电极之间流动; 以及形成在硅衬底的底表面上的底部电极。 第一电极由能够与硅衬底和有源层欧姆接触的金属形成。

公开(公告)号：US09048302B2

公开(公告)日：2015-06-02

申请号：US12318779

申请日：2009-01-08

申请人： Yoshihiro Sato ,  Hiroshi Kambayashi ,  Yuki Niiyama ,  Takehiko Nomura ,  Seikoh Yoshida ,  Masayuki Iwami ,  Jiang Li

发明人： Yoshihiro Sato ,  Hiroshi Kambayashi ,  Yuki Niiyama ,  Takehiko Nomura ,  Seikoh Yoshida ,  Masayuki Iwami ,  Jiang Li

IPC分类号： H01L31/0328 ,  H01L31/0336 ,  H01L31/072 ,  H01L31/109 ,  H01L29/778 ,  H01L29/66 ,  H01L29/423 ,  H01L29/78 ,  H01L21/02 ,  H01L29/20 ,  H01L29/205 ,  H01L29/267

CPC分类号： H01L29/7813 ,  H01L21/0254 ,  H01L21/02579 ,  H01L21/0262 ,  H01L29/0843 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/267 ,  H01L29/4232 ,  H01L29/4236 ,  H01L29/66462 ,  H01L29/66522 ,  H01L29/778 ,  H01L29/7783 ,  H01L29/7789

摘要： A field effect transistor has an MOS structure and is formed of a nitride based compound semiconductor. The field effect transistor includes a substrate; a semiconductor operating layer having a recess and formed on the substrate; an insulating layer formed on the semiconductor operating layer including the recess; a gate electrode formed on the insulating layer at the recess; and a source electrode and a drain electrode formed on the semiconductor operating layer with the recess in between and electrically connected to the semiconductor operating layer. The recess includes a side wall inclined relative to the semiconductor operating layer.

摘要翻译： 场效应晶体管具有MOS结构并且由氮化物基化合物半导体形成。 场效应晶体管包括衬底; 具有凹部并形成在所述基板上的半导体操作层; 形成在包括所述凹部的所述半导体操作层上的绝缘层; 在所述凹部处形成在所述绝缘层上的栅电极; 以及形成在半导体操作层上的源电极和漏电极，其中凹部位于半导体操作层之间并与半导体操作层电连接。 凹部包括相对于半导体操作层倾斜的侧壁。

公开(公告)号：US20090194790A1

公开(公告)日：2009-08-06

申请号：US12318779

申请日：2009-01-08

申请人： Yoshihiro Sato ,  Hiroshi Kambayashi ,  Yuki Niiyama ,  Takehiko Nomura ,  Seikoh Yoshida ,  Masayuki Iwami ,  Jiang Li

发明人： Yoshihiro Sato ,  Hiroshi Kambayashi ,  Yuki Niiyama ,  Takehiko Nomura ,  Seikoh Yoshida ,  Masayuki Iwami ,  Jiang Li

IPC分类号： H01L29/78 ,  H01L21/336

CPC分类号： H01L29/7813 ,  H01L21/0254 ,  H01L21/02579 ,  H01L21/0262 ,  H01L29/0843 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/267 ,  H01L29/4232 ,  H01L29/4236 ,  H01L29/66462 ,  H01L29/66522 ,  H01L29/778 ,  H01L29/7783 ,  H01L29/7789

摘要： A field effect transistor has an MOS structure and is formed of a nitride based compound semiconductor. The field effect transistor includes a substrate; a semiconductor operating layer having a recess part and formed on the substrate; an insulating layer formed on the semiconductor operating layer including the recess part; a gate electrode formed on the insulating layer at the recess part; and a source electrode and a drain electrode formed on the semiconductor operating layer with the recess part in between and electrically connected to the semiconductor operating layer. The recess part includes a side wall protruding and inclined relative to the semiconductor operating layer.

摘要翻译： 场效应晶体管具有MOS结构并且由氮化物基化合物半导体形成。 场效应晶体管包括衬底; 半导体工作层，具有凹部并形成在所述基板上; 形成在包括凹部的半导体操作层上的绝缘层; 形成在所述凹部的所述绝缘层上的栅电极; 以及形成在半导体操作层上的源电极和漏电极，其中凹部位于半导体操作层之间并与半导体操作层电连接。 凹部包括相对于半导体操作层突出并倾斜的侧壁。

公开(公告)号：US08304809B2

公开(公告)日：2012-11-06

申请号：US12292164

申请日：2008-11-13

申请人： Shusuke Kaya ,  Seikoh Yoshida ,  Masatoshi Ikeda, legal representative ,  Sadahiro Kato ,  Takehiko Nomura ,  Nariaki Ikeda ,  Masayuki Iwami ,  Yoshihiro Sato ,  Hiroshi Kambayashi ,  Koh Li

发明人： Shusuke Kaya ,  Seikoh Yoshida ,  Sadahiro Kato ,  Takehiko Nomura ,  Nariaki Ikeda ,  Masayuki Iwami ,  Yoshihiro Sato ,  Hiroshi Kambayashi ,  Koh Li

IPC分类号： H01L29/737 ,  H01L21/28 ,  H01L21/265

CPC分类号： H01L29/7787 ,  H01L29/0611 ,  H01L29/2003 ,  H01L29/4175 ,  H01L29/66462

摘要： In a GaN-based semiconductor device, an active layer of a GaN-based semiconductor is formed on a silicon substrate. A trench is formed in the active layer and extends from a top surface of the active layer to a depth reaching the silicon substrate. A first electrode is formed on an internal wall surface of the trench and extends from the top surface of the active layer to the silicon substrate. A second electrode is formed on the active layer to define a current path between the first electrode and the second electrode via the active layer in an on-state of the device. A bottom electrode is formed on a bottom surface of the silicon substrate and defines a bonding pad for the first electrode. The first electrode is formed of metal in direct ohmic contact with both the silicon substrate and the active layer.

摘要翻译： 在GaN基半导体器件中，在硅衬底上形成GaN基半导体的有源层。 在有源层中形成沟槽并从有源层的顶表面延伸到达到硅衬底的深度。 第一电极形成在沟槽的内壁表面上并从有源层的顶表面延伸到硅衬底。 第二电极形成在有源层上，以在器件的导通状态中经由有源层在第一电极和第二电极之间限定电流路径。 底部电极形成在硅衬底的底表面上，并且限定了用于第一电极的焊盘。 第一电极由与硅衬底和有源层直接欧姆接触的金属形成。

公开(公告)号：US07812371B2

公开(公告)日：2010-10-12

申请号：US12382010

申请日：2009-03-05

申请人： Shusuke Kaya ,  Seikoh Yoshida ,  Masatoshi Ikeda, legal representative ,  Sadahiro Kato ,  Takehiko Nomura ,  Nariaki Ikeda ,  Masayuki Iwami ,  Yoshihiro Sato ,  Hiroshi Kambayashi ,  Yuki Niiyama

发明人： Shusuke Kaya ,  Seikoh Yoshida ,  Sadahiro Kato ,  Takehiko Nomura ,  Nariaki Ikeda ,  Masayuki Iwami ,  Yoshihiro Sato ,  Hiroshi Kambayashi ,  Yuki Niiyama

IPC分类号： H01L31/072

CPC分类号： H01L29/0847 ,  H01L29/0657 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/4236 ,  H01L29/42376 ,  H01L29/66462 ,  H01L29/7787

摘要： The field effect transistor includes a laminated structure in which a buffer layer, and an electron transporting layer (undoped GaN layer), and an electron supplying layer (undoped AlGaN layer) are laminated in sequence on a sapphire substrate. An npn laminated structure is formed on a source region of the electron supplying layer, and a source electrode is formed on the npn laminated structure. A drain electrode is formed in a drain region of the electron supplying layer, and an insulating film is formed in an opening region formed in the gate region. When a forward voltage greater than a threshold is applied to the gate electrode, an inversion layer is formed and the drain current flows. By changing a thickness and an impurity concentration of the p-type GaN layer, the threshold voltage can be controlled. The electrical field concentration between the gate electrode and the drain electrode is relaxed due to the drift layer, and voltage resistance improves.

摘要翻译： 场效应晶体管包括其中缓冲层和电子传输层（未掺杂的GaN层）和电子供体层（未掺杂的AlGaN层）依次层叠在蓝宝石衬底上的叠层结构。 在电子供给层的源极区域上形成npn层叠结构，在npn层叠结构上形成源电极。 在电子供给层的漏极区域中形成漏电极，并且在形成在栅极区域的开口区域中形成绝缘膜。 当向栅电极施加大于阈值的正向电压时，形成反型层，漏极电流流动。 通过改变p型GaN层的厚度和杂质浓度，可以控制阈值电压。 由于漂移层，栅极电极和漏电极之间的电场浓度被松弛，并且耐电压提高。