摘要:
A solid-state imaging apparatus which can photograph a high-definition image and, at high quality, a moving image having lower resolution than that of the high-definition image is provided. The solid-state imaging apparatus comprises: plural pixels which include a photoelectric conversion unit and a transfer unit; an impurity diffused region which accumulates charges transferred from the photoelectric conversion unit through the transfer unit; an amplifying unit which outputs signals based on the charges accumulated by the impurity diffused region; and a reset unit which resets potential of the impurity diffused region, wherein the four pixels including the obliquely adjacent two pixels and the two pixels, in a same row or column, adjacent to one of the obliquely adjacent two pixels constitute a unit pixel group, and the impurity diffused region, the amplifying unit and the reset unit are commonly connected to the four pixels constituting the unit pixel group.
摘要:
A solid-state imaging apparatus which can photograph a high-definition image and, at high quality, a moving image having lower resolution than that of the high-definition image is provided. The solid-state imaging apparatus comprises: plural pixels which include a photoelectric conversion unit and a transfer unit; an impurity diffused region which accumulates charges transferred from the photoelectric conversion unit through the transfer unit; an amplifying unit which outputs signals based on the charges accumulated by the impurity diffused region; and a reset unit which resets potential of the impurity diffused region, wherein the four pixels including the obliquely adjacent two pixels and the two pixels, in a same row or column, adjacent to one of the obliquely adjacent two pixels constitute a unit pixel group, and the impurity diffused region, the amplifying unit and the reset unit are commonly connected to the four pixels constituting the unit pixel group.
摘要:
A power supply wiring and a pad are arranged on a first wiring layer. Then, the power supply wiring and the pad are arranged so as not to be mutually overlapped. Signal wirings are arranged on a second wiring layer. Another signal wiring is arranged on a layer different from the second wiring layer. The other signal wiring is arranged below the pad so as to be overlapped with the pad. The signal wirings and the other signal wiring are mutually connected by a plug. A buffer is arranged between the pad and the other signal wiring.
摘要:
Each of a plurality of unit pixels includes first and second photoelectric conversion units, and a pixel output unit shared between the first and second photoelectric conversion units. A monitoring unit configured to control the charge-accumulation operation of the first photoelectric conversion unit by monitoring a signal generated based on the second photoelectric conversion unit is provided.
摘要:
A photoelectric conversion apparatus includes a plurality of photoelectric conversion elements configured to convert incident light to electric carriers, an amplifier MOS transistor shared by the plurality of photoelectric conversion elements, a plurality of floating diffusions connected to the gate electrode of the amplifier MOS transistor, and a plurality of transfer MOS transistors arranged corresponding to the respective photoelectric conversion elements, each of the transfer MOS transistors transferring electric carriers from corresponding one of the photoelectric conversion elements to corresponding one of the floating diffusions. In such a photoelectric conversion apparatus, at least two of the floating diffusions are electrically connected to each other with a wiring line included in the same wiring layer as the gate electrode of the amplifier MOS transistor.
摘要:
In a photoelectric conversion device, groups of unit pixels are arranged in a well, where each of the unit pixels includes photoelectric conversion elements, an amplifier transistor, and transfer transistors. The photoelectric conversion device includes a line used to supply a voltage to the well, a well-contact part used to connect the well-voltage-supply line to the well, and transfer-control lines used to control the transfer transistors. The transfer-control lines are symmetrically arranged with respect to the well-voltage-supply line in respective regions of the unit-pixel groups.
摘要:
In a photoelectric conversion device, groups of unit pixels are arranged in a well, where each of the unit pixels includes photoelectric conversion elements, an amplifier transistor, and transfer transistors. The photoelectric conversion device includes a line used to supply a voltage to the well, a well-contact part used to connect the well-voltage-supply line to the well, and transfer-control lines used to control the transfer transistors. The transfer-control lines are symmetrically arranged with respect to the well-voltage-supply line in respective regions of the unit-pixel groups.
摘要:
The invention provides a solid-state image pickup apparatus which comprises a pixel area in which pixels each having at least a photoelectric conversion unit and an amplification transistor for amplifying and outputting a signal of the photoelectric conversion unit are two-dimensionally arranged in horizontal and vertical directions, wherein a power supply wiring, which extends in a vertical direction along pixel boundaries of horizontal and vertical directions while meandering, is arranged on one of two pixel lines adjoining to each other in the horizontal direction in the pixel area, and the power supply wiring is connected to one of a source and a drain of the amplification transistor on each of the two pixel lines. Thus, it is possible to provide a high-sensitivity and high-image-quality amplified solid-state image pickup apparatus in which a difference of sensitivities at one-line intervals is small.
摘要:
An image pickup apparatus which can photograph a high-definition image and a moving image of lower resolution at high quality and an image pickup system which uses the image pickup apparatus are provided. Unit pixel groups each of which comprises plural pixels including photoelectric conversion units and transfer transistors for transferring signal charges from the photoelectric conversion units, an amplification transistor common to the plural pixels, and the like are arranged in row and column directions. With respect to the plural unit pixel groups mutually adjacent in the row direction, control lines for controlling the transfer transistors respectively corresponding to the adjacent two photoelectric conversion units are alternately connected to an odd row and an even row in the row direction.
摘要:
In an XY address type solid-state imager apparatus comprising a solid-state imager having a plurality of pixels two-dimensionally arranged, and horizontal and vertical scanning circuits to read signals of the pixels, the scanning circuits each have a progressive scanning circuit to progressively read pixel signals by a first scanning control signal, and an interlace scanning circuit to read pixel signals with an interlaced manner by a second scanning control signal different from the first scanning control signal, and arbitrarily carries out combining of progressive reading and interlace reading in one frame in accordance with a combination of the respective scanning control signals, and reads pixel signals.