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    Semiconductor device having ferroelectric capacitor and its manufacture method
    1.
    发明授权
    Semiconductor device having ferroelectric capacitor and its manufacture method 有权
    具有铁电电容器的半导体器件及其制造方法

    公开(公告)号：US07518173B2

    公开(公告)日：2009-04-14

    申请号：US11129490

    申请日：2005-05-16

    申请人： Yukinobu Hikosaka ,  Mitsushi Fujiki ,  Kazutoshi Izumi ,  Naoya Sashida ,  Aki Dote

    发明人： Yukinobu Hikosaka ,  Mitsushi Fujiki ,  Kazutoshi Izumi ,  Naoya Sashida ,  Aki Dote

    IPC分类号： H01L29/41 ,  H01L29/43

    CPC分类号： H01L27/11507 ,  H01L21/76816 ,  H01L21/76832 ,  H01L21/7687 ,  H01L27/11502 ,  H01L28/57

    摘要： A semiconductor device includes: a semiconductor substrate; a MOS transistor formed in the semiconductor substrate and having an insulated gate and source/drain regions on both sides of the insulated gate; a ferroelectric capacitor formed above the semiconductor substrate and having a lower electrode, a ferroelectric layer and an upper electrode; a metal film formed on the upper electrode and having a thickness of a half of or thinner than a thickness of the upper electrode; an interlayer insulating film burying the ferroelectric capacitor and the metal film; a conductive plug formed through the interlayer insulating film, reaching the metal film and including a conductive glue film and a tungsten body; and an aluminum wiring formed on the interlayer insulating film and connected to the conductive plug. A new problem near an upper electrode contact is solved which may otherwise be caused by adopting a W plug over the F capacitor.

    摘要翻译： 半导体器件包括：半导体衬底; 形成在所述半导体衬底中并且在所述绝缘栅极的两侧具有绝缘栅极和源极/漏极区域的MOS晶体管; 形成在半导体衬底上并具有下电极，铁电层和上电极的铁电电容器; 形成在上电极上并具有比上电极的厚度的一半或更薄的厚度的金属膜; 埋置铁电电容器和金属膜的层间绝缘膜; 通过层间绝缘膜形成的导电插塞，到达金属膜并且包括导电胶膜和钨体; 以及形成在层间绝缘膜上并连接到导电插塞的铝布线。 解决了上电极接触附近的新问题，否则可能是通过在F电容器上采用W插头引起的。

    Semiconductor device and method of manufacturing the same
    3.
    发明授权
    Semiconductor device and method of manufacturing the same 有权
    半导体装置及其制造方法

    公开(公告)号：US08324671B2

    公开(公告)日：2012-12-04

    申请号：US12068912

    申请日：2008-02-13

    申请人： Aki Dote ,  Kazutoshi Izumi

    发明人： Aki Dote ,  Kazutoshi Izumi

    IPC分类号： H01L29/92

    CPC分类号： H01L27/11507 ,  H01L27/11502 ,  H01L28/55

    摘要： A semiconductor device has a ferroelectric capacitor having a ferroelectric film, an interlayer insulating film having a first layer formed on the ferroelectric capacitor, a plug and a wiring connecting to the ferroelectric capacitor, and a dummy plug in the vicinity of the ferroelectric capacitor.

    摘要翻译： 半导体器件具有铁电电容器，具有在铁电电容器上形成的第一层的层间绝缘膜，与铁电电容器连接的布线和在铁电电容器附近的虚拟插头的铁电体电容器。

    Semiconductor device and method of manufacturing the same
    4.
    发明申请
    Semiconductor device and method of manufacturing the same 有权
    半导体装置及其制造方法

    公开(公告)号：US20080197391A1

    公开(公告)日：2008-08-21

    申请号：US12068912

    申请日：2008-02-13

    申请人： Aki Dote ,  Kazutoshi Izumi

    发明人： Aki Dote ,  Kazutoshi Izumi

    IPC分类号： H01L29/92 ,  H01L21/00

    CPC分类号： H01L27/11507 ,  H01L27/11502 ,  H01L28/55

    摘要： A semiconductor device has a ferroelectric capacitor having a ferroelectric film, an interlayer insulating film having a first layer formed on the ferroelectric capacitor, a plug and a wiring connecting to the ferroelectric capacitor, and a dummy plug in the vicinity of the ferroelectric capacitor.

    摘要翻译： 半导体器件具有铁电电容器，具有在铁电电容器上形成的第一层的层间绝缘膜，与铁电电容器连接的布线和在铁电电容器附近的虚拟插头的铁电体电容器。

    SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
    7.
    发明申请
    SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 有权
    半导体器件及其制造方法

    公开(公告)号：US20110012230A1

    公开(公告)日：2011-01-20

    申请号：US12896231

    申请日：2010-10-01

    申请人： Kazutoshi Izumi ,  Hitoshi Saito ,  Naoya Sashida ,  Kaoru Saigoh ,  Kouichi Nagai

    发明人： Kazutoshi Izumi ,  Hitoshi Saito ,  Naoya Sashida ,  Kaoru Saigoh ,  Kouichi Nagai

    IPC分类号： H01L29/92

    CPC分类号： H01L27/11507 ,  H01L27/11502 ,  H01L2924/19041

    摘要： An insulation film (24) having a gradual inclination of a surface is formed by a high density plasma CVD method, an atmospheric pressure CVD method or the like, after a ferroelectric capacitor (23) is formed. Thereafter, an alumina film (25) is formed on the insulation film (24). According to the method, low coverage of the alumina film (25) does not become a problem, and the ferroelectric capacitor (23) is reliably protected.

    摘要翻译： 在形成铁电电容器（23）之后，通过高密度等离子体CVD法，大气压CVD法等形成具有逐渐倾斜的表面的绝缘膜（24）。 此后，在绝缘膜（24）上形成氧化铝膜（25）。 根据该方法，氧化铝膜（25）的低覆盖率不成为问题，铁电电容器（23）被可靠地保护。

    MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
    9.
    发明申请
    MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE 有权
    半导体器件的制造方法

    公开(公告)号：US20100261294A1

    公开(公告)日：2010-10-14

    申请号：US12543179

    申请日：2009-08-18

    申请人： Yasuhiro Hayashi ,  Kazutoshi Izumi

    发明人： Yasuhiro Hayashi ,  Kazutoshi Izumi

    IPC分类号： H01L21/02

    CPC分类号： H01L27/105 ,  H01L21/02063 ,  H01L21/31111 ,  H01L21/76804 ,  H01L27/11502 ,  H01L27/11507 ,  H01L27/11509 ,  H01L28/55 ,  H01L28/57 ,  H01L28/65

    摘要： After a first via hole leading to a ferroelectric capacitor structure are formed in an interlayer insulating film by dry etching, a second via hole to expose part of the ferroelectric capacitor structure is formed in a hydrogen diffusion preventing film so as to be aligned with the first via hole by wet etching, and a via hole constructed by the first via hole and the second via hole communicating with each other is formed.

    摘要翻译： 在通过干蚀刻在层间绝缘膜中形成通向导电铁电电容器结构的第一通孔之后，在氢扩散防止膜中形成用于暴露部分铁电电容器结构的第二通孔，以便与第一通孔 通过湿蚀刻形成通孔，并且形成由第一通孔和第二通孔构成的通孔，彼此连通。

    Semiconductor device and semiconductor product
    10.
    发明授权
    Semiconductor device and semiconductor product 有权
    半导体器件和半导体产品

    公开(公告)号：US07803640B2

    公开(公告)日：2010-09-28

    申请号：US11946467

    申请日：2007-11-28

    申请人： Kazutoshi Izumi

    发明人： Kazutoshi Izumi

    IPC分类号： H01L21/00

    CPC分类号： H01L27/11507 ,  H01L27/11502 ,  H01L28/57

    摘要： The embodiments discussed herein reduce, in a semiconductor device having a ferroelectric capacitor, the film thickness of an interlayer insulation film covering the ferroelectric capacitor without degrading yield, and reduce the invasion of water into the ferroelectric capacitor. A semiconductor device includes a first interlayer insulation film formed on a substrate, a ferroelectric capacitor formed on the first interlayer insulation film, a second interlayer insulation film formed on the first interlayer insulation film so as to cover the ferroelectric capacitor, and a hydrogen barrier film formed on the second interlayer insulation film, the ferroelectric capacitor is formed of a lower electrode, a ferroelectric film formed on the lower electrode, an upper electrode formed on the ferroelectric film in contact therewith, and a polish-resistant film formed on the upper electrode, wherein the second interlayer insulation film covers the polish-resistant film with a film thickness of 50-100 nm.

    摘要翻译： 这里讨论的实施例在具有铁电电容器的半导体器件中减少覆盖铁电体电容器的层间绝缘膜的膜厚而不降低产率，并且减少水侵入铁电电容器。 半导体器件包括形成在基板上的第一层间绝缘膜，形成在第一层间绝缘膜上的铁电电容器，形成在第一层间绝缘膜上以覆盖铁电电容器的第二层间绝缘膜，以及氢阻挡膜 形成在第二层间绝缘膜上的铁电电容器由下电极，形成在下电极上的强电介质膜，形成在与其接触的铁电体膜上的上电极和形成在上电极上的耐光膜形成 其特征在于，所述第二层间绝缘膜覆盖所述耐光泽膜，膜厚为50〜100nm。