公开(公告)号：US20120000986A1

公开(公告)日：2012-01-05

申请号：US13009279

申请日：2011-01-19

申请人： Min-Jae JEONG ,  Ki-Yong Lee ,  Jong-Won Hong ,  Heung-Yeol Na ,  Eu-Gene Kang ,  Seok-Rak Chang ,  Jin-Wook Seo ,  Tae-Hoon Yang ,  Yun-Mo Chung ,  Byung-Soo Soo ,  Byoung-Keon Park ,  Dong-Hyun Lee ,  Kil-Won Lee ,  Won-Bong Baek ,  Jong-Ryuk Park ,  Bo-Kyung Choi ,  Ivan Maidanchuk ,  Jae-Wan Jung

发明人： Min-Jae JEONG ,  Ki-Yong Lee ,  Jong-Won Hong ,  Heung-Yeol Na ,  Eu-Gene Kang ,  Seok-Rak Chang ,  Jin-Wook Seo ,  Tae-Hoon Yang ,  Yun-Mo Chung ,  Byung-Soo Soo ,  Byoung-Keon Park ,  Dong-Hyun Lee ,  Kil-Won Lee ,  Won-Bong Baek ,  Jong-Ryuk Park ,  Bo-Kyung Choi ,  Ivan Maidanchuk ,  Jae-Wan Jung

IPC分类号： F24D5/00

CPC分类号： C23C16/4481 ,  C23C16/45525 ,  C23C16/52

摘要： A canister for a deposition apparatus and a deposition apparatus using the same, and more particularly, a canister for a deposition apparatus that can provide a uniform amount of source material contained in a reaction gas supplied into a deposition chamber and improve safety in the supply of the source material, and a deposition apparatus using the canister. The deposition apparatus includes a deposition chamber; a canister supplying a reaction gas into the deposition chamber; and a carrier gas supplier for supplying a carrier gas into the canister, in which the canister includes a main body, a heating unit heating the main body and a temperature measuring unit disposed under the main body.

摘要翻译： 一种用于沉积设备的罐和使用其的沉积设备，更具体地，涉及一种用于沉积设备的罐，其可以提供均匀量的源材料，所述源材料包含在供应到沉积室中的反应气体中，并且提高了供应 源材料和使用该罐的沉积装置。 沉积设备包括沉积室; 向所述沉积室供应反应气体的罐; 以及载体气体供给器，用于将载气供应到罐中，其中罐包括主体，加热单元加热主体，温度测量单元设置在主体下方。

公开(公告)号：US20100224883A1

公开(公告)日：2010-09-09

申请号：US12714201

申请日：2010-02-26

申请人： Byoung-Keon PARK ,  Tae-Hoo Yang ,  Jin-Wook Seo ,  Ki-Yong Lee ,  Maxim Lisachenko ,  Bo-Kyung Choi ,  Dae-Woo Lee ,  Kil-Won Lee ,  Dong-Hyun Lee ,  Jong-Ryuk Park ,  Ji-Su Ahn ,  Yong-Dae Kim ,  Heung-Yeol Na ,  Min-Jae Jeong ,  Yun-Mo Chung ,  Jong-Won Hong ,  Eu-Gene Kang ,  Seok-Rak Chang ,  Jae-Wan Jung ,  Sang-Yon Yoon

发明人： Byoung-Keon PARK ,  Tae-Hoo Yang ,  Jin-Wook Seo ,  Ki-Yong Lee ,  Maxim Lisachenko ,  Bo-Kyung Choi ,  Dae-Woo Lee ,  Kil-Won Lee ,  Dong-Hyun Lee ,  Jong-Ryuk Park ,  Ji-Su Ahn ,  Yong-Dae Kim ,  Heung-Yeol Na ,  Min-Jae Jeong ,  Yun-Mo Chung ,  Jong-Won Hong ,  Eu-Gene Kang ,  Seok-Rak Chang ,  Jae-Wan Jung ,  Sang-Yon Yoon

IPC分类号： H01L33/16 ,  H01L29/786 ,  H01L21/336 ,  H01L21/20

CPC分类号： H01L29/6675 ,  H01L21/02422 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/02667 ,  H01L21/02672 ,  H01L27/1277 ,  H01L29/66757 ,  H01L29/66765 ,  H01L29/78696

摘要： A thin film transistor (TFT) and an organic light emitting diode (OLED) display device. The TFT and the OLED display device include a substrate, a buffer layer disposed on the substrate, a semiconductor layer disposed on the buffer layer, a gate electrode insulated from the semiconductor layer, a gate insulating layer insulating the semiconductor layer from the gate electrode, and source and drain electrodes insulated from the gate electrode and partially connected to the semiconductor layer, wherein the semiconductor layer is formed from a polycrystalline silicon layer crystallized by a metal catalyst and the metal catalyst is removed by gettering using an etchant. In addition, the OLED display device includes an insulating layer disposed on the entire surface of the substrate, a first electrode disposed on the insulating layer and electrically connected to one of the source and drain electrodes, an organic layer, and a second electrode.

摘要翻译： 薄膜晶体管（TFT）和有机发光二极管（OLED）显示装置。 TFT和OLED显示装置包括基板，设置在基板上的缓冲层，设置在缓冲层上的半导体层，与半导体层绝缘的栅电极，将半导体层与栅电极绝缘的栅极绝缘层， 以及与栅电极绝缘并且部分地连接到半导体层的源电极和漏电极，其中半导体层由通过金属催化剂结晶的多晶硅层形成，并且使用蚀刻剂通过吸气除去金属催化剂。 此外，OLED显示装置包括设置在基板的整个表面上的绝缘层，设置在绝缘层上并电连接到源极和漏极之一的第一电极，有机层和第二电极。

公开(公告)号：US08882976B2

公开(公告)日：2014-11-11

申请号：US12481166

申请日：2009-06-09

申请人： Yun-Mo Chung ,  Min-Jae Jeong ,  Jong-Won Hong ,  Eu-Gene Kang ,  Heung-Yeol Na ,  Ki-Yong Lee

发明人： Yun-Mo Chung ,  Min-Jae Jeong ,  Jong-Won Hong ,  Eu-Gene Kang ,  Heung-Yeol Na ,  Ki-Yong Lee

IPC分类号： C25B9/00 ,  C25B11/00 ,  C25B13/00 ,  C23C14/00 ,  H01J37/34 ,  C23C14/35 ,  C23C14/54

CPC分类号： C23C14/54 ,  C23C14/35 ,  H01J37/3408 ,  H01J37/3455

摘要： A magnetron unit moving apparatus for preventing magnetization and magnetron sputtering equipment having the same. The magnetron unit moving apparatus includes a magnetron unit disposed adjacent to a target, to generate a specific magnetic field, and a movement unit to space the magnetron unit and the target apart such that a strength of a magnetic field generated over the target is within a predetermined reference strength range. It is possible to space the target and the magnetron unit apart so as to prevent the target from being magnetized when a process is not performed.

摘要翻译： 一种用于防止磁化的磁控管单元移动装置和具有该磁控管的移动装置。 磁控管单元移动装置包括邻近目标设置的磁控管单元，以产生特定的磁场;以及移动单元，用于将磁控管单元和目标物间隔开，使得在目标上产生的磁场的强度在 预定参考强度范围。 可以将目标和磁控管单元分开，以便在不执行处理时防止目标被磁化。

公开(公告)号：US20110100973A1

公开(公告)日：2011-05-05

申请号：US12713982

申请日：2010-02-26

申请人： Heung-Yeol NA ,  Min-Jae Jeong ,  Jong-Won Hong ,  Eu-Gene Kang ,  Seok-Rak Chang ,  Ki-Yong Lee ,  Jin-Wook Seo ,  Tae-Hoon Yang ,  Yun-Mo Chung ,  Byung-Soo So ,  Byoung-Keon Park ,  Dong-Hyun Lee ,  Kil-Won Lee ,  Won-Bong Baek ,  Jong-Ryuk Park ,  Bo-Kyung Choi ,  Ivan Maidanchuk ,  Jae-Wan Jung

发明人： Heung-Yeol NA ,  Min-Jae Jeong ,  Jong-Won Hong ,  Eu-Gene Kang ,  Seok-Rak Chang ,  Ki-Yong Lee ,  Jin-Wook Seo ,  Tae-Hoon Yang ,  Yun-Mo Chung ,  Byung-Soo So ,  Byoung-Keon Park ,  Dong-Hyun Lee ,  Kil-Won Lee ,  Won-Bong Baek ,  Jong-Ryuk Park ,  Bo-Kyung Choi ,  Ivan Maidanchuk ,  Jae-Wan Jung

IPC分类号： F27D11/02

CPC分类号： F27B17/0025 ,  H01L21/67109

摘要： An apparatus for thermally processing a plurality of substrates including a process chamber into which a boat having a plurality of substrates stacked thereon is loaded, and a heater chamber separate from the process chamber and having a plurality of heaters to apply heat to the process chamber. Here, the heaters are installed to correspond to all sides of the plurality of substrates. Therefore, it is possible to minimize a temperature distribution in the process chamber and uniformly supply heat to the entire region of the plurality of substrates.

摘要翻译： 一种用于热加工多个基板的装置，包括处理室，其中堆叠有多个基板的船只装载在该处理室中;以及加热器室，与处理室分离并具有多个加热器以向处理室施加热量。 这里，加热器安装成对应于多个基板的所有侧面。 因此，可以使处理室中的温度分布最小化并且均匀地向多个基板的整个区域供给热量。

公开(公告)号：US20100006423A1

公开(公告)日：2010-01-14

申请号：US12481239

申请日：2009-06-09

申请人： Yun-Mo CHUNG ,  Ki-Yong Lee ,  Min-Jae Jeong ,  Heung-Yeol Na ,  Jong-Won Hong ,  Eu-Gene Kang

发明人： Yun-Mo CHUNG ,  Ki-Yong Lee ,  Min-Jae Jeong ,  Heung-Yeol Na ,  Jong-Won Hong ,  Eu-Gene Kang

IPC分类号： C23C14/35

CPC分类号： C23C14/3407 ,  C23C14/35 ,  C23C14/54 ,  H01J37/3408 ,  H01J37/3458 ,  H01J37/3482

摘要： A magnetic field generation control unit and a magnetron sputtering apparatus and method using the magnetic field generation control circuit. The magnetic field generation control unit includes a magnetic field generator for providing a specific magnetic field to a target consisting of a metal material to be deposited on a substrate, and a magnetic field generator control module electrically connected with the magnetic field generator, receiving an electrical signal from outside, and selectively supplying a current capable of generating the magnetic field to the magnetic field generator. The target is prevented from being magnetized when a sputtering process is not performed, and the magnetic field is generated from the target when the process is performed. Consequently, it is possible to perform uniform deposition on the substrate.

摘要翻译： 磁场发生控制单元和使用磁场发生控制电路的磁控管溅射装置和方法。 磁场产生控制单元包括：磁场发生器，用于向由沉积在基板上的金属材料组成的靶提供特定的磁场;以及与该磁场发生器电连接的磁场发生器控制模块， 信号，并且选择性地向磁场发生器提供能够产生磁场的电流。 当不执行溅射处理时，防止目标被磁化，并且当执行处理时从目标产生磁场。 因此，可以在基板上均匀地沉积。

公开(公告)号：US08373097B2

公开(公告)日：2013-02-12

申请号：US12713982

申请日：2010-02-26

申请人： Heung-Yeol Na ,  Min-Jae Jeong ,  Jong-Won Hong ,  Eu-Gene Kang ,  Seok-Rak Chang ,  Ki-Yong Lee ,  Jin-Wook Seo ,  Tae-Hoon Yang ,  Yun-Mo Chung ,  Byung-Soo So ,  Byoung-Keon Park ,  Dong-Hyun Lee ,  Kil-Won Lee ,  Won-Bong Baek ,  Jong-Ryuk Park ,  Bo-Kyung Choi ,  Ivan Maidanchuk ,  Jae-Wan Jung

发明人： Heung-Yeol Na ,  Min-Jae Jeong ,  Jong-Won Hong ,  Eu-Gene Kang ,  Seok-Rak Chang ,  Ki-Yong Lee ,  Jin-Wook Seo ,  Tae-Hoon Yang ,  Yun-Mo Chung ,  Byung-Soo So ,  Byoung-Keon Park ,  Dong-Hyun Lee ,  Kil-Won Lee ,  Won-Bong Baek ,  Jong-Ryuk Park ,  Bo-Kyung Choi ,  Ivan Maidanchuk ,  Jae-Wan Jung

IPC分类号： F27D11/00 ,  A21B1/00 ,  A21B1/22

CPC分类号： F27B17/0025 ,  H01L21/67109

摘要： An apparatus for thermally processing a plurality of substrates including a process chamber into which a boat having a plurality of substrates stacked thereon is loaded, and a heater chamber separate from the process chamber and having a plurality of heaters to apply heat to the process chamber. Here, the heaters are installed to correspond to all sides of the plurality of substrates. Therefore, it is possible to minimize a temperature distribution in the process chamber and uniformly supply heat to the entire region of the plurality of substrates.

摘要翻译： 一种用于热加工多个基板的装置，包括处理室，其中堆叠有多个基板的船只装载在该处理室中;以及加热器室，与处理室分离并具有多个加热器以向处理室施加热量。 这里，加热器安装成对应于多个基板的所有侧面。 因此，可以使处理室中的温度分布最小化并且均匀地向多个基板的整个区域供给热量。

公开(公告)号：US08048783B2

公开(公告)日：2011-11-01

申请号：US12714252

申请日：2010-02-26

申请人： Yun-Mo Chung ,  Ki-Yong Lee ,  Min-Jae Jeong ,  Jin-Wook Seo ,  Jong-Won Hong ,  Heung-Yeol Na ,  Eu-Gene Kang ,  Seok-Rak Chang ,  Tae-Hoon Yang ,  Ji-Su Ahn ,  Young-Dae Kim ,  Byoung-Keon Park ,  Kil-Won Lee ,  Dong-Hyun Lee ,  Sang-Yon Yoon ,  Jong-Ryuk Park ,  Bo-Kyung Choi ,  Maxim Lisachenko

发明人： Yun-Mo Chung ,  Ki-Yong Lee ,  Min-Jae Jeong ,  Jin-Wook Seo ,  Jong-Won Hong ,  Heung-Yeol Na ,  Eu-Gene Kang ,  Seok-Rak Chang ,  Tae-Hoon Yang ,  Ji-Su Ahn ,  Young-Dae Kim ,  Byoung-Keon Park ,  Kil-Won Lee ,  Dong-Hyun Lee ,  Sang-Yon Yoon ,  Jong-Ryuk Park ,  Bo-Kyung Choi ,  Maxim Lisachenko

IPC分类号： H01L21/20

CPC分类号： H01L21/02532 ,  C23C14/04 ,  H01L21/02422 ,  H01L21/02488 ,  H01L21/02672

摘要： A method of forming a polycrystalline silicon layer and an atomic layer deposition apparatus used for the same. The method includes forming an amorphous silicon layer on a substrate, exposing the substrate having the amorphous silicon layer to a hydrophilic or hydrophobic gas atmosphere, placing a mask having at least one open and at least one closed portion over the amorphous silicon layer, irradiating UV light toward the amorphous silicon layer and the mask using a UV lamp, depositing a crystallization-inducing metal on the amorphous silicon layer, and annealing the substrate to crystallize the amorphous silicon layer into a polycrystalline silicon layer. This method and apparatus provide for controlling the seed position and grain size in the formation of a polycrystalline silicon layer.

摘要翻译： 一种形成多晶硅层的方法和用于其的原子层沉积装置。 该方法包括在衬底上形成非晶硅层，将具有非晶硅层的衬底暴露于亲水或疏水性气体气氛，在非晶硅层上放置具有至少一个开放和至少一个封闭部分的掩模，照射UV 使用UV灯朝向非晶硅层和掩模发光，在非晶硅层上沉积结晶诱导金属，并退火基板以使非晶硅层结晶成多晶硅层。 该方法和装置提供了在多晶硅层的形成中控制种子位置和晶粒尺寸。

公开(公告)号：US20110120859A1

公开(公告)日：2011-05-26

申请号：US12948650

申请日：2010-11-17

申请人： Tae-Hoon Yang ,  Ki-Yong Lee ,  Jin-Wook Seo ,  Byoung-Keon Park ,  Yun-Mo Chung ,  Dong-Hyun Lee ,  Kil-Won Lee ,  Jae-Wan Jung ,  Jong-Ryuk Park ,  Bo-Kyung Choi ,  Won-Bong Baek ,  Byung-Soo So ,  Jong-Won Hong ,  Min-Jae Jeong ,  Heung-Yeol Na ,  Ivan Maidanchuk ,  Eu-Gene Kang ,  Seok-Rak Chang

发明人： Tae-Hoon Yang ,  Ki-Yong Lee ,  Jin-Wook Seo ,  Byoung-Keon Park ,  Yun-Mo Chung ,  Dong-Hyun Lee ,  Kil-Won Lee ,  Jae-Wan Jung ,  Jong-Ryuk Park ,  Bo-Kyung Choi ,  Won-Bong Baek ,  Byung-Soo So ,  Jong-Won Hong ,  Min-Jae Jeong ,  Heung-Yeol Na ,  Ivan Maidanchuk ,  Eu-Gene Kang ,  Seok-Rak Chang

IPC分类号： C23C14/34 ,  C23C14/18

CPC分类号： C23C14/3407 ,  C23C14/185 ,  C23C14/34 ,  H01J37/3417 ,  H01J37/3435 ,  H01J37/3438

摘要： Provided is a sputtering apparatus which deposits a metal catalyst on an amorphous silicon layer at an extremely low concentration in order to crystallize amorphous silicon, and particularly minimizes non-uniformity of the metal catalyst caused by a pre-sputtering process without reducing process efficiency. This sputtering apparatus improves the uniformity of the metal catalyst deposited on the amorphous silicon layer at an extremely low concentration. The sputtering apparatus includes a process chamber having first and second regions, a metal target located inside the process chamber, a target transfer unit moving the metal target and having a first shield for controlling a traveling direction of a metal catalyst discharged from the metal target, and a substrate holder disposed in the second region to be capable of facing the metal target. A distance difference between a linear distance, which is a distance between a substrate loaded on the substrate holder and the metal target, and a length of the first shield is less than 3 cm.

摘要翻译： 提供一种溅射装置，其以非常低的浓度将金属催化剂沉积在非晶硅层上以使非晶硅结晶，并且特别地最小化由预溅射工艺引起的金属催化剂的不均匀性而不降低工艺效率。 该溅射装置以非常低的浓度提高沉积在非晶硅层上的金属催化剂的均匀性。 溅射装置包括具有第一和第二区域的处理室，位于处理室内的金属靶，移动金属靶的靶转印单元，具有用于控制从金属靶排出的金属催化剂的行进方向的第一屏蔽件， 以及设置在所述第二区域中以能够面对所述金属靶的衬底保持器。 作为装载在基板保持架上的基板与金属对象物之间的距离的线性距离与第一屏蔽件的长度之间的距离差小于3cm。

公开(公告)号：US20100040991A1

公开(公告)日：2010-02-18

申请号：US12539187

申请日：2009-08-11

申请人： Yun-Mo CHUNG ,  Ki-Yong Lee ,  Min-Jae Jeong ,  Jong-Won Hong ,  Heung-Yeol Na ,  Eu-Gene Kang ,  Seok-Rak Chang

发明人： Yun-Mo CHUNG ,  Ki-Yong Lee ,  Min-Jae Jeong ,  Jong-Won Hong ,  Heung-Yeol Na ,  Eu-Gene Kang ,  Seok-Rak Chang

IPC分类号： F27D15/02

CPC分类号： F27D11/12 ,  F27B9/20 ,  F27B9/36 ,  F27D9/00 ,  H01L21/67115 ,  H01L21/67173 ,  H01L21/67248 ,  H01L21/6776

摘要： An in-line annealing apparatus and a method of annealing a substrate using the in-line annealing apparatus in which a plurality of heating devices provide a transportation path of a substrate and heat the substrate transported along the transportation path to a crystallization temperature, and an instantaneous high-temperature annealing unit heats the substrate positioned in the transportation path between the heating devices to a instantaneous annealing temperature. The in-line annealing apparatus and the method of annealing a substrate using the same provide a highly efficient annealing process that can be performed at various temperatures including a high temperature of 700° C. or higher.

摘要翻译： 使用在线退火装置中的在线退火装置和使基板退火的方法，其中多个加热装置提供基板的输送路径并将沿输送路径输送的基板加热至结晶温度， 瞬时高温退火单元将位于加热装置之间的输送路径中的基板加热到瞬时退火温度。 在线退火装置和使用其的基板的退火方法提供了可以在包括700℃或更高的高温的各种温度下进行的高效退火工艺。

公开(公告)号：US20100006424A1

公开(公告)日：2010-01-14

申请号：US12481166

申请日：2009-06-09

申请人： Yun-Mo Chung ,  Min-Jae Jeong ,  Jong-Won Hong ,  Eu-Gene Kang ,  Heung-Yeol Na ,  Ki-Yong Lee

发明人： Yun-Mo Chung ,  Min-Jae Jeong ,  Jong-Won Hong ,  Eu-Gene Kang ,  Heung-Yeol Na ,  Ki-Yong Lee

IPC分类号： C23C14/35

CPC分类号： C23C14/54 ,  C23C14/35 ,  H01J37/3408 ,  H01J37/3455

摘要： A magnetron unit moving apparatus for preventing magnetization and magnetron sputtering equipment having the same. The magnetron unit moving apparatus includes a magnetron unit disposed adjacent to a target, to generate a specific magnetic field, and a movement unit to space the magnetron unit and the target apart such that a strength of a magnetic field generated over the target is within a predetermined reference strength range. It is possible to space the target and the magnetron unit apart so as to prevent the target from being magnetized when a process is not performed.

摘要翻译： 一种用于防止磁化的磁控管单元移动装置和具有该磁控管的移动装置。 磁控管单元移动装置包括邻近目标设置的磁控管单元，以产生特定的磁场;以及移动单元，用于将磁控管单元和目标物间隔开，使得在目标上产生的磁场的强度在 预定参考强度范围。 可以将目标和磁控管单元分开，以便在不执行处理时防止目标被磁化。