Abstract:
Illumination subsystems of a metrology or inspection system, metrology systems, inspection systems, and methods for illuminating a specimen for metrology measurements or for inspection are provided.
Abstract:
Illumination subsystems of a metrology system, metrology systems, and methods for illuminating a specimen for metrology measurements are provided. One illumination subsystem includes a light source configured to generate coherent pulses of light and a dispersive element positioned in the path of the coherent pulses of light, which is configured to reduce coherence of the pulses of light by mixing spatial and temporal characteristics of light distribution in the pulses of light. The illumination subsystem also includes an electro-optic modulator positioned in the path of the pulses of light exiting the dispersive element and which is configured to reduce the coherence of the pulses of light by temporally modulating the light distribution in the pulses of light. The illumination subsystem is configured to direct the pulses of light from the electro-optic modulator to a specimen positioned in the metrology system.
Abstract:
Illumination subsystems of a metrology system, metrology systems, and methods for illuminating a specimen for metrology measurements are provided.
Abstract:
Illumination subsystems of a metrology or inspection system, metrology systems, inspection systems, and methods for illuminating a specimen for metrology measurements or for inspection are provided. One illumination subsystem includes a light source configured to generate coherent pulses of light and a dispersive element positioned in the path of the coherent pulses of light, which is configured to reduce coherence of the pulses of light by mixing spatial and temporal characteristics of light distribution in the pulses of light. The illumination subsystem also includes an electro-optic modulator positioned in the path of the pulses of light exiting the dispersive element and which is configured to reduce the coherence of the pulses of light by temporally modulating the light distribution in the pulses of light. The illumination subsystem is configured to direct the pulses of light from the electro-optic modulator to a specimen.
Abstract:
A semiconductor wafer may include a dummy field configured to enable overlay measurements. The enhanced dummy field may include a plurality of encoding blocs that enable OVL measurements to be made throughout the enhanced dummy field.
Abstract:
A semiconductor wafer may include a dummy field configured to enable overlay measurements. The enhanced dummy field may include a plurality of encoding blocs that enable OVL measurements to be made throughout the enhanced dummy field.
Abstract:
Disclosed are apparatus and methods for determining a minimum tool-induced shift (TIS) during an overlay metrology procedure. In a specific embodiment, a method of determining overlay or misalignment error on a target is disclosed. For a predefined number of positions of a target within a field of view (FOV) of a metrology tool, the following operations are performed: (i) determining a tool-induced shift (TIS) parameter value for each predefined position of the target within the FOV based on at least one overlay measurement obtained from the target at the each position (for example, based on overlay measurements at 0 and 180 degrees of wafer orientation) and (ii) determining a minimum TIS parameter value and its corresponding FOV position from the plurality of determined TIS parameters values at the predefined positions of the target within the FOV. The FOV position that corresponds to the minimum TIS is then defined as an appropriate position for the actual overlay measurement and the value of minimum TIS is used for overlay correction.
Abstract:
Disclosed are apparatus and methods for obtaining and analyzing various unique metrics or “target diagnostics” from one or more semiconductor overlay targets. In one embodiment, an overlay target is measured to obtain one or both of two specific types of target diagnostic information, systematic error metrics and/or random noise metrics. The systematic error metrics generally quantify asymmetries of the overlay target, while the random noise metrics quantify and/or qualify the spatial noise that is proximate to or associated with the overlay target.