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14 条记录 (耗时 0.019 秒)

    Layer structure with an epitaxial, non-c-axis oriented HTSC thin film
    1.
    发明授权
    Layer structure with an epitaxial, non-c-axis oriented HTSC thin film 失效
    具有外延非C轴取向HTSC薄膜的层结构

    公开(公告)号：US06156706A

    公开(公告)日：2000-12-05

    申请号：US91851

    申请日：1998-06-22

    申请人： Yuri Divin ,  Jin-Won Seo ,  Ulrich Poppe

    发明人： Yuri Divin ,  Jin-Won Seo ,  Ulrich Poppe

    IPC分类号： C30B29/22 ,  H01L39/02 ,  H01L39/24 ,  B32B18/00

    CPC分类号： H01L39/2458 ,  Y10S428/93 ,  Y10S505/701

    摘要： The invention relates to a layered structure with at least one epitaxial, non-c-axis oriented high Tc superconductor (HTSC) thin film with an approximately tetragonal structure, in which the thin film having an orientation (-1,0,1) is formed on a cubic or pseudocubic (1,0,3) NdGaO.sub.3 substrate.

    摘要翻译： PCT No.PCT / DE96 / 02475 Sec。 371日期：1998年6月22日 102（e）1998年6月22日PCT 1996年12月18日PCT PCT。 公开号WO97 / 23896 日期1997年7月3日本发明涉及具有至少一个具有近似四方结构的外延非c轴取向的高Tc超导体（HTSC）薄膜的分层结构，其中薄膜具有取向（-1， 0,1）形成在立方体或假立方（1,0,3）NdGaO 3衬底上。

    MEASURING INSTRUMENT, ELECTRICAL RESISTANCE ELEMENTS AND MEASURING SYSTEM FOR MEASURING TIME-VARIABLE MAGNETIC FIELDS OR FIELD GRADIENTS
    2.
    发明申请
    MEASURING INSTRUMENT, ELECTRICAL RESISTANCE ELEMENTS AND MEASURING SYSTEM FOR MEASURING TIME-VARIABLE MAGNETIC FIELDS OR FIELD GRADIENTS 有权
    测量仪器，电阻元件和测量时变磁场或场分级的测量系统

    公开(公告)号：US20120088674A1

    公开(公告)日：2012-04-12

    申请号：US13261077

    申请日：2010-05-18

    申请人： Mikhail Faley ,  Ulrich Poppe ,  Robert L. Fagaly

    发明人： Mikhail Faley ,  Ulrich Poppe ,  Robert L. Fagaly

    IPC分类号： G01R33/035 ,  H01L39/02 ,  H01C7/00

    CPC分类号： H01C1/14 ,  G01R33/035 ,  G01R33/0354 ,  H01C7/00 ,  H01L39/02

    摘要： The invention relates to a measuring instrument for time-variable magnetix fluxes, or flux gradients, to electrical resistance elements, and to a measuring system comprising a measuring instrument or electrical resistance element according to the invention. The core component of the measuring instrument is a flux transformer composed of a base material which has a phase transition to the superconducting state. According to the invention, even when the base material is in the superconducting state, this flux transformer comprises at least one load region having electrical resistance that is other than zero for dissipating the electric energy in the conductor loop thereof. For this purpose, according to the invention the conductor loop and the magnetic field source are disposed in one plane and are typically photolithographically structured. The resistance elements according to the invention, having resistance values of ≦10−4Ω, are used as core components in the measuring instrument. According to the invention, measurement is possible in a broader frequency range, with less noise and with greater sensitivity than was possible with generic measuring instruments or measuring systems.

    摘要翻译： 本发明涉及一种用于时变磁通量或通量梯度到电阻元件的测量仪器，以及包括根据本发明的测量仪器或电阻元件的测量系统。 测量仪器的核心部件是由与超导状态相变的基体材料组成的磁通变压器。 根据本发明，即使当基材处于超导状态时，该磁通变压器包括至少一个负载区域，该负载区域具有不为零的电阻，用于耗散其导体环路中的电能。 为此，根据本发明，导体环路和磁场源设置在一个平面中，并且通常是光刻结构的。 根据本发明的电阻值为“n”; 10-4＆OHgr的电阻值被用作测量仪器的核心部件。 根据本发明，可以在更宽的频率范围内进行测量，噪声小，灵敏度高于通用测量仪器或测量系统的灵敏度。

    IONICALLY CONTROLLED THREE-GATE COMPONENT
    4.
    发明申请
    IONICALLY CONTROLLED THREE-GATE COMPONENT 审中-公开
    多边控制三门组件

    公开(公告)号：US20130079230A1

    公开(公告)日：2013-03-28

    申请号：US13703225

    申请日：2011-06-03

    申请人： Ulrich Poppe ,  Dieter Weber ,  Yuriy Divin ,  Mikhail Faley

    发明人： Ulrich Poppe ,  Dieter Weber ,  Yuriy Divin ,  Mikhail Faley

    IPC分类号： H01L39/22

    CPC分类号： H01L39/223 ,  G11C13/0007 ,  G11C13/04 ,  G11C2213/17 ,  G11C2213/53 ,  H01L39/145 ,  H01L39/228 ,  H01L45/08 ,  H01L45/1206 ,  H01L45/1226 ,  H01L45/1266 ,  H01L45/147

    摘要： A three-port component comprises a source electrode, a drain electrode, and a channel, which is corrected between the source electrode and the drain electrode and which is made of a material haying an electronic conductivity that can be varied by supplying and/or removing ions. The three-port component comprises an ion reservoir, which is in contact with a gate electrode, and which is connected to the channel so that the reservoir is able to exchange ions with the channel when a potential is applied to the gate electrode. Information can be stored on the three-port component by distributing the total number of ions, which are present in the ion reservoir and the channel, between the ion reservoir and the channel. The distribution of ions in the channel and the ion reservoir changes when, and only when, a corresponding driving potential is applied to the gate electrode. Thus, in contrast to RRAMS, there is no time-voltage dilemma.

    摘要翻译： 三端口部件包括源电极，漏电极和沟道，其在源电极和漏电极之间被校正，并且由具有电导率的材料制成，该材料可以通过供应和/或去除 离子。 三端口部件包括与栅电极接触的离子储存器，并且连接到通道，使得当电势施加到栅电极时，储存器能够与沟道交换离子。 信息可以通过分布在离子储存器和通道之间的离子储存器和通道中存在的总离子数存储在三端口部件上。 当并且仅当相应的驱动电位被施加到栅极电极时，通道和离子储存器中的离子分布发生变化。 因此，与RRAMS相比，没有时间电压困境。

    Tuneable cavity resonator
    5.
    发明授权
    Tuneable cavity resonator 失效
    调谐谐振腔

    公开(公告)号：US06549104B1

    公开(公告)日：2003-04-15

    申请号：US09786760

    申请日：2001-06-08

    申请人： Indra Ghosh ,  Ulrich Poppe ,  Norbert Klein ,  Klaus Schieber

    发明人： Indra Ghosh ,  Ulrich Poppe ,  Norbert Klein ,  Klaus Schieber

    IPC分类号： H01P706

    CPC分类号： H01P7/06

    摘要： The invention concerns a tunable cavity resonator that comprises a resonator body (2, 3, 4) defining a cavity (5), a tuning plate (28) whose position with respect to the resonator body (2, 3, 4) is modifiable and which influences the resonance frequency (&ohgr;R) of the cavity resonator, and an adjustment device (22, 26) for mechanically changing the position of the tuning plate (28), which is characterized in that a conversion ratio mechanism (18, 20) couples the adjustment device (22, 26) to the tuning plate (28) in terms of movement and converts a linear excursion (&Dgr;x1) generated by the adjustment device (22, 26), at a predefined ratio (U), into a reduced linear excursion (&Dgr;x2) that acts on the tuning plate (28), the conversion ratio mechanism (18, 20) comprising a first spring element (20) whose end toward the adjustment device is deflectable with the linear excursion (&Dgr;x1) generated by the adjustment device (22, 26), and a second spring element (18) which impinges with an opposing force on the end of the first spring element (20) remote from the adjustment device.

    摘要翻译： 本发明涉及一种可调谐腔谐振器，其包括限定空腔（5）的谐振器本体（2,3,4），调谐板（28），其相对于谐振器本体（2,3,4）的位置是可修改的， 其影响空腔谐振器的谐振频率（omegaR），以及用于机械地改变调谐板（28）的位置的调节装置（22,26），其特征在于，转换比机构（18,20）耦合 调节装置（22,26）在调节板（28）的移动方向上以预定的比率（U）将由调节装置（22,26）产生的线性偏移（DELTAx1）转换成减小的线性 作用在调谐板（28）上的偏移（DELTAx2），转换比机构（18,20）包括第一弹簧元件（20），其第一弹簧元件（20）的朝向调节装置的端部可通过调节产生的线性偏移（DELTAx1）偏转 装置（22,26）以及与之相撞的第二弹簧元件（18） 第一弹簧元件（20）的远离调节装置的端部上的反作用力。

    Series of layers and component containing such
    6.
    发明授权
    Series of layers and component containing such 失效
    系列的层和组件含有此类

    公开(公告)号：US06191073B1

    公开(公告)日：2001-02-20

    申请号：US09254167

    申请日：1999-02-27

    申请人： Ricardo Hojczyk ,  Ulrich Poppe ,  Chunlin Jia

    发明人： Ricardo Hojczyk ,  Ulrich Poppe ,  Chunlin Jia

    IPC分类号： H01B1202

    CPC分类号： H01L39/225 ,  H01L39/128

    摘要： The invention relates to a series of layers containing at least one layer on the basis of REBa2CU3O7-Z or with a comparable crystallographic structure, wherein said layer is connected to a non-superconductive layer. The only material chosen for the non-superconductive layer is material containing atomic components which are chemically compatible with the superconductive material of the high temperature superconductive layer. Such a series of layers enables a multilayer system or also a cryogenic component, e.g. a Josephson contact, to be formed.

    摘要翻译： 本发明涉及包含至少一层基于REBa2CU3O7-Z或具有可比较的晶体结构的一系列层，其中所述层连接到非超导层。 为非超导层选择的唯一材料是含有与高温超导层的超导材料化学相容的原子成分的材料。 这样的一系列层可以实现多层系统或低温组分，例如。 约瑟夫森联系人将要成立。

    SPUTTERING SOURCES FOR HIGH-PRESSURE SPUTTERING WITH LARGE TARGETS AND SPUTTERING METHOD
    8.
    发明申请
    SPUTTERING SOURCES FOR HIGH-PRESSURE SPUTTERING WITH LARGE TARGETS AND SPUTTERING METHOD 有权
    用于具有大目标和溅射方法的高压喷溅的溅射源

    公开(公告)号：US20130199924A1

    公开(公告)日：2013-08-08

    申请号：US13876648

    申请日：2011-09-17

    申请人： Mikhail Faley ,  Ulrich Poppe

    发明人： Mikhail Faley ,  Ulrich Poppe

    IPC分类号： C23C14/35

    CPC分类号： C23C14/35 ,  C23C14/562 ,  H01J37/3408 ,  H01J37/3452

    摘要： A sputtering head comprises a receiving area for a sputtering target (target receptacle). The sputtering head comprises one or more magnetic field sources so as to generate a stray magnetic field. The magnetic north and the magnetic south of at least one magnetic field source, between which the stray field forms, are located 10 mm or less, preferably 5 mm or less, and particularly preferably approximately 1 mm apart. It was found that, notably when sputtering at a high sputtering gas pressure of 0.5 mbar or more, the degree of ionization of the sputtering plasma, and consequently also the ablation rate of the sputtering target, can be locally adjusted by such a locally effective magnetic field. This allows the thicknesses of the layers that are obtained to be more homogeneous over the surface of the substrate. Advantageously, the sputtering head additionally comprises a solid state insulator, which surrounds the base body comprising the target receptacle and the sputtering target (all connected to potential) and electrically insulates the same from the shield that spatially limits the material ablation to the sputtering target (connected to ground).

    摘要翻译： 溅射头包括用于溅射靶（目标插座）的接收区域。 溅射头包括一个或多个磁场源，以产生杂散磁场。 磁性北部和至少一个磁场源的磁性南部，杂散场形成，其间位于10mm以下，优选为5mm以下，特别优选为1mm左右。 已经发现，特别是当以0.5mbar或更高的溅射气体压力的高溅射时，溅射等离子体的离子化程度以及溅射靶的烧蚀速率也可以通过这种局部有效的磁场 领域。 这允许所获得的层的厚度在衬底的表面上更均匀。 有利地，溅射头还包括固态绝缘体，该固态绝缘体围绕包括靶接收器和溅射靶（全部连接到电位）的基体，并将其与屏蔽层电绝缘，空间上将材料消融限制到溅射靶 连接到地面）。