公开(公告)号：US20120247676A1

公开(公告)日：2012-10-04

申请号：US13425872

申请日：2012-03-21

申请人： Yutaka FUJINO ,  Atsushi UEDA ,  Shigenori OZAKI ,  Junichi KITAGAWA

发明人： Yutaka FUJINO ,  Atsushi UEDA ,  Shigenori OZAKI ,  Junichi KITAGAWA

IPC分类号： C23C16/511 ,  H01P3/12 ,  B05C9/00

CPC分类号： H01J37/32201 ,  C23C16/511 ,  H01J37/32211 ,  H01J37/32238 ,  H01J37/32431 ,  H05H1/46 ,  H05H2001/463

摘要： A plasma processing apparatus includes a microwave introduction device which introduces a microwave into a process chamber. The microwave introduction device includes a plurality of microwave transmitting plates which is fitted into a plurality of openings of a ceiling. The microwave transmitting plates are arranged on one virtual plane parallel to a mounting surface of a mounting table, with the microwave transmitting plates fitted into the respective openings. The microwave transmitting plates includes first to third microwave transmitting plates. The first to third microwave transmitting plates are arranged in such a manner that a distance between the center point of the first microwave transmitting window and the center point of the second microwave transmitting window becomes equal or approximately equal to a distance between the center point of the first microwave transmitting window and the center point of the third microwave transmitting window.

摘要翻译： 等离子体处理装置包括将微波引入处理室的微波引入装置。 微波引入装置包括多个安装在天花板的多个开口中的微波透射板。 微波传输板布置在平行于安装台的安装表面的一个虚拟平面上，其中微波传输板安装在相应的开口中。 微波透射板包括第一至第三微波透射板。 第一至第三微波透射板以这样的方式布置，使得第一微波透射窗口的中心点与第二微波透射窗口的中心点之间的距离变为等于或近似等于第二微波透射窗口的中心点之间的距离 第一微波发射窗口和第三微波发射窗口的中心点。

公开(公告)号：US20120052693A1

公开(公告)日：2012-03-01

申请号：US13216350

申请日：2011-08-24

申请人： Shigenori OZAKI ,  Hitoshi Kato ,  Takeshi Kumagai

发明人： Shigenori OZAKI ,  Hitoshi Kato ,  Takeshi Kumagai

IPC分类号： H01L21/31 ,  H01L21/318 ,  H01L21/316 ,  B05C11/00 ,  B05C11/10

CPC分类号： C23C16/45548 ,  C23C16/402 ,  C23C16/45536

摘要： When alternately performing a film deposition step where a silicon-containing gas and O3 gas are alternately supplied to a substrate on a susceptor by rotating the susceptor thereby to forma thin film of the reaction product, and an alteration step where the reaction product is altered by irradiating plasma to the substrate, plasma intensity of the plasma is changed during film deposition. Specifically, the plasma intensity is lower when a thickness of the thin film is small (or at an initial stage of the film deposition—alteration step), and is increased as the thin film becomes thicker (or as the number of the film deposition steps is increased). Alternatively, the plasma intensity is higher when the thin film is relatively thin and then reduced.

摘要翻译： 当交替地进行薄膜沉积步骤，其中通过旋转基座将含硅气体和O 3气体交替地供应到基座上的基板，从而形成反应产物的薄膜，以及反应产物被改变的改变步骤 将等离子体照射到基板上，在膜沉积期间等离子体的等离子体强度发生变化。 具体地说，当薄膜的厚度小（或在薄膜沉积 - 改变步骤的初始阶段）时，等离子体强度较低，并且随着薄膜变厚而增加（或者作为薄膜沉积步骤的数量） 增加）。 或者，当薄膜相对较薄然后减小时，等离子体强度较高。

公开(公告)号：US20130130512A1

公开(公告)日：2013-05-23

申请号：US13471587

申请日：2012-05-15

申请人： Hitoshi KATO ,  Shigehiro USHIKUBO ,  Tatsuya TAMURA ,  Shigenori OZAKI ,  Takeshi KUMAGAI ,  Hiroyuki KIKUCHI

发明人： Hitoshi KATO ,  Shigehiro USHIKUBO ,  Tatsuya TAMURA ,  Shigenori OZAKI ,  Takeshi KUMAGAI ,  Hiroyuki KIKUCHI

IPC分类号： H01L21/02

CPC分类号： H01L21/02274 ,  C23C16/345 ,  C23C16/4554 ,  H01J37/321 ,  H01J37/32449 ,  H01J37/32715 ,  H01J37/32733 ,  H01J37/32779 ,  H01L21/02164 ,  H01L21/0228

摘要： A film deposition method including: a step of carrying a substrate into a vacuum chamber, and placing the substrate on a turntable; a step of rotating the turntable; and an adsorption-formation-irradiation step of supplying a first reaction gas to the substrate from a first reaction gas supply part to adsorb the first reaction gas on the substrate; supplying a second reaction gas from a second reaction gas supply part so that the first reaction gas adsorbed on the substrate reacts with the second reaction gas so as to form a reaction product on the substrate; and supplying a hydrogen containing gas to a plasma generation part that is separated from the first reaction gas supply part and the second reaction gas supply part in a circumferential direction of the turntable so as to generate plasma above the turntable and to irradiate the plasma to the reaction product.

摘要翻译： 一种膜沉积方法，包括：将基板搬入真空室，并将基板放置在转台上的步骤; 转动转盘的一步; 以及吸附形成照射步骤，从第一反应气体供给部分向基板供给第一反应气体，以将第一反应气体吸附在基板上; 从第二反应气体供给部供给第二反应气体，使得吸附在基板上的第一反应气体与第二反应气体反应，以在基板上形成反应产物; 并向在第一反应气体供给部和第二反应气体供给部与旋转体的圆周方向分离的等离子体产生部供给含氢气体，以在转台上方产生等离子体，并将等离子体照射到 反应产物。

公开(公告)号：US20100105215A1

公开(公告)日：2010-04-29

申请号：US12632131

申请日：2009-12-07

申请人： Takuya SUGAWARA ,  Yoshihide TADA ,  Genji NAKAMURA ,  Shigenori OZAKI ,  Toshio NAKANISHI ,  Masaru SASAKI ,  Seiji MATSUYAMA ,  Kazuhide HASEBE ,  Shigeru NAKAJIMA ,  Tomonori FUJIWARA

发明人： Takuya SUGAWARA ,  Yoshihide TADA ,  Genji NAKAMURA ,  Shigenori OZAKI ,  Toshio NAKANISHI ,  Masaru SASAKI ,  Seiji MATSUYAMA ,  Kazuhide HASEBE ,  Shigeru NAKAJIMA ,  Tomonori FUJIWARA

IPC分类号： H01L21/31

CPC分类号： H01L21/02112 ,  H01L21/0234 ,  H01L21/28176 ,  H01L21/28185 ,  H01L21/28194 ,  H01L21/28202 ,  H01L21/28211 ,  H01L21/3144 ,  H01L21/31658 ,  H01L29/518 ,  H01L29/78

摘要： An insulting film is modified by subjecting the insulting film to a modification treatment comprising a combination of a plasma treatment and a thermal annealing treatment. There is provided a method of enhancing the characteristic of an insulating film by improving deterioration in the characteristic of the insulating film due to carbon, a suboxide, a dangling bond or the like contained in the insulating film.

摘要翻译： 通过对绝缘膜进行包括等离子体处理和热退火处理的组合的改性处理来修饰绝缘膜。 通过改善绝缘膜中所含的碳，低氧化物，悬挂键等导致的绝缘膜的特性劣化，提供了提高绝缘膜特性的方法。