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    Process for producing deposition films
    1.
    发明授权
    Process for producing deposition films 失效
    沉积膜生产工艺

    公开(公告)号：US4683146A

    公开(公告)日：1987-07-28

    申请号：US722467

    申请日：1985-04-12

    申请人： Yutaka Hirai ,  Hiroshi Matsuda ,  Ken Eguchi ,  Masahiro Haruta ,  Yukuo Nishimura ,  Takashi Nakagiri

    发明人： Yutaka Hirai ,  Hiroshi Matsuda ,  Ken Eguchi ,  Masahiro Haruta ,  Yukuo Nishimura ,  Takashi Nakagiri

    IPC分类号： C23C16/24 ,  H01L21/205 ,  B05D3/06

    CPC分类号： H01L21/02532 ,  C23C16/24 ,  H01L21/0237 ,  H01L21/0245 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262

    摘要： A process for producing deposition films is provided which comprises forming a gaseous atmosphere of at least one compound silicon hydride selected from the group consisting of;(A) straight chain silicon hydrides represented by the general formulaSi.sub.n H.sub.2n+2 wherein n is an integer 4 or more;(B) cyclic silicon hydrides unsubstituted or substituted by a linear or branched silicon hydride residue which are represented by the general formulaSi.sub.m H.sub.2m wherein m is 3, 4, 5, or 6; and(C) branched chain silicon hydrides represented by the general formulaSi.sub.p H.sub.q wherein p is an integer of 4 or more and q is an interger of 10 or more;in a reaction chamber containing a substrate, and exerting light energy on the atmosphere to excite and decompose the silicon hydride, thereby a silicon-containing layer on the substrate.

    摘要翻译： 提供一种生产沉积膜的方法，其包括形成至少一种选自以下的化合物氢化硅的气态气氛： （A）由通式SinH2n + 2表示的直链氢化氢，其中n为整数4以上; （B）未被取代或被直链或支链氢化硅残基取代的环状硅氢化物，其由通式SimH 2 m表示，其中m为3,4,5或6; 和（C）由通式SipHq表示的支链氢化氢，其中p为4以上的整数，q为10以上的整数; 在含有衬底的反应室中，并且在大气中施加光能以激发和分解氢化硅，从而在衬底上形成含硅层。

    Method of forming deposition film
    3.
    发明授权
    Method of forming deposition film 失效
    形成沉积膜的方法

    公开(公告)号：US4683147A

    公开(公告)日：1987-07-28

    申请号：US722468

    申请日：1985-04-12

    申请人： Ken Eguchi ,  Hiroshi Matsuda ,  Masahiro Haruta ,  Yukuo Nishimura ,  Yutaka Hirai ,  Takashi Nakagiri

    发明人： Ken Eguchi ,  Hiroshi Matsuda ,  Masahiro Haruta ,  Yukuo Nishimura ,  Yutaka Hirai ,  Takashi Nakagiri

    IPC分类号： B05D3/06 ,  B05D7/24 ,  C23C16/22 ,  C23C16/48 ,  H01L21/205

    CPC分类号： B05D1/60 ,  C23C16/22 ,  C23C16/482 ,  C23C16/483 ,  C23C16/488 ,  H01L21/0237 ,  H01L21/0245 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  B05D3/06

    摘要： A method of forming a silicon-containing film deposited on a substrate, which comprises the steps of forming a gaseous atmosphere of at least one silicon compound selected from the group consisting of compounds represented by general formulas (A), (B), (C), (D), (E) and (F) in a deposition chamber containing the substrate, and applying light energy to the compound to exite and decompose the compound. The compounds of the general formulas (A)-(F) are defined below: (A) Si.sub.n H.sub.m X.sub.l (wherein X is a halogen atom, n is an integer of not less than 3, and m and l are integers of not less than 1, respectively, m+l=2n; if l is an integer of not less than 2, a plurality of X's may represent different halogen atoms) representing a cyclic silicon compound; (B) Si.sub.a X.sub.2a+2 (wherein X is a halogen atom and a is an integer of 1 to 6) representing a chain halogenated silicon compound; (C) Si.sub.b X.sub.2b (wherein X is a halogen atom and b is an integer of 3 to 6) representing a cyclic halogenated silicon compound; (D) Si.sub. c X.sub.d Y.sub.e (wherein X and Y are different halogen atoms, c is an integer of 3 to 6, d and e are integers of not less than 1, and d+e=2c) representing a cyclic halogenated silicon compound; (E) Si.sub.f Y.sub.g Y.sub.h (X and Y are different halogen atoms, f is an integer of 1 to 6, g and h are integers of not less than 1, and g+h=2f+2) representing a chain halogenated silicon compound; and (F) Si.sub.i H.sub.j X.sub.k (wherein X is a halogen atom, i,j and k are integers of not less than 1, and j+k=2i+2) representing a silicon compound.

    摘要翻译： 一种形成沉积在基底上的含硅膜的方法，其包括以下步骤：形成至少一种选自以下通式（A），（B），（C ），（D），（E）和（F），并且向化合物施加光能以排出和分解化合物。 通式（A） - （F）的化合物定义如下：（A）SinHmX1（其中X是卤素原子，n是不小于3的整数，m和l是不小于1的整数 分别为m + 1 = 2n;如果l为不小于2的整数，多个X可以表示不同的卤原子），代表环状硅化合物; （B）代表链卤化硅化合物的SiaX2a + 2（其中X是卤素原子，a是1至6的整数）; （C）表示环状卤代硅化合物的SibX2b（其中，X为卤素原子，b为3〜6的整数） （D）Si cXdYe（其中X和Y是不同的卤素原子，c是3至6的整数，d和e是不小于1的整数，d + e = 2c）表示环状卤化硅化合物; （E）SifYgYh（X和Y是不同的卤素原子，f是1至6的整数，g和h是不小于1的整数，g + h = 2f + 2）代表链卤化硅化合物; 和（F）SiiHjXk（其中X是卤素原子，i，j和k是不小于1的整数，j + k = 2i + 2）表示硅化合物。

    Method for forming a deposited film
    4.
    发明授权
    Method for forming a deposited film 失效
    沉积膜形成方法

    公开(公告)号：US4683144A

    公开(公告)日：1987-07-28

    申请号：US722133

    申请日：1985-04-11

    申请人： Yukuo Nishimura ,  Ken Eguchi ,  Hiroshi Matsuda ,  Masahiro Haruta ,  Yutaka Hirai ,  Takashi Nakagiri

    发明人： Yukuo Nishimura ,  Ken Eguchi ,  Hiroshi Matsuda ,  Masahiro Haruta ,  Yutaka Hirai ,  Takashi Nakagiri

    IPC分类号： B05D3/06 ,  B05D7/24 ,  C23C16/22 ,  C23C16/48 ,  H01L21/205

    CPC分类号： B05D1/60 ,  C23C16/22 ,  C23C16/482 ,  H01L21/0237 ,  H01L21/0245 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  B05D3/06

    摘要： A method for forming a deposited film comprises forming a gaseous atmosphere of a silane compound represented by the general formula: Si.sub.n H.sub.2n+2 (n.gtoreq.1) and a halogen compound in a deposition chamber in which a substrate is arranged, and exciting and decomposing these compounds by utilization of photoenergy thereby to form the deposited film containing silicon atoms on said substrate.A method for forming a deposited film comprises forming a gaseous atmosphere of a silane compound represented by the general formula: Si.sub.n H.sub.2n+2 (n.gtoreq.1), a halogen compound and a compound containing atoms belonging too the group III or the group V of the periodic table in a deposition chamber in which a substrate is arranged, and exciting and decomposing these compounds by utilization of photoenergy thereby to form a deposited film containing silicon atoms and the atoms belonging to the group III or the group V of the periodic table on said substrate.

    摘要翻译： 形成沉积膜的方法包括在沉积室中形成由通式SinH2n + 2（n> / = 1）表示的硅烷化合物和卤素化合物的气体气氛，其中衬底被排列， 通过利用光能分解这些化合物，从而在所述衬底上形成含有硅原子的沉积膜。 形成沉积膜的方法包括形成由以下通式表示的硅烷化合物的气态气氛：SinH2n + 2（n> / = 1），卤素化合物和含有属于III族或第V族的原子的化合物 在其中布置基板的沉积室中，通过利用光能来激发和分解这些化合物，从而形成含有硅原子和属于周期表第III族或第V族的原子的沉积膜 在所述基板上。

    Method of forming deposition film
    5.
    发明授权
    Method of forming deposition film 失效
    形成沉积膜的方法

    公开(公告)号：US4569855A

    公开(公告)日：1986-02-11

    申请号：US722132

    申请日：1985-04-11

    申请人： Hiroshi Matsuda ,  Masahiro Haruta ,  Ken Eguchi ,  Yukuo Nishimura ,  Yutaka Hirai ,  Takashi Nakagiri

    发明人： Hiroshi Matsuda ,  Masahiro Haruta ,  Ken Eguchi ,  Yukuo Nishimura ,  Yutaka Hirai ,  Takashi Nakagiri

    IPC分类号： C23C16/24 ,  H01L21/205 ,  B05D3/06

    CPC分类号： C23C16/24 ,  H01L21/0237 ,  H01L21/0245 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262

    摘要： A process for forming a deposition film, wherein a gaseous atmosphere of a silicon compound selected from(i) a silicon compound having at least one azo group directly bonded to a silicon atom and(ii) a silicon compound having at least one azide group directly bonded to a silicon atomis formed in a deposition chamber in which a substrate is placed, said compound is excited and decomposed utilizing light energy, and a deposition film containing silicon atoms is formed on said substrate.A compound containing atoms of a group III element or a group V element of the Periodic Table may be included in the atmosphere in the deposition chamber, the compounds excited and decomposed utilizing light energy, and a deposition film containing silicon atoms and the atoms in the group III or V element of the Periodic Table formed on said substrate.

    摘要翻译： 一种用于形成沉积膜的方法，其中选自（i）具有至少一个与硅原子键合的偶氮基的硅化合物的硅化合物的气体气氛和（ii）直接与至少一个叠氮基的硅化合物 在其中放置基板的沉积室中形成与硅原子键合，所述化合物利用光能被激发和分解，并且在所述衬底上形成含有硅原子的沉积膜。 含有元素周期表第Ⅲ族元素或第V族元素的化合物的化合物可以包含在沉积室中的气氛中，利用光能激发和分解的化合物以及含有硅原子的沉积膜和 在所述衬底上形成的周期表的III族或V族元素。

    Method for forming deposited film
    9.
    发明授权
    Method for forming deposited film 失效
    沉积膜形成方法

    公开(公告)号：US4683145A

    公开(公告)日：1987-07-28

    申请号：US722134

    申请日：1985-04-11

    申请人： Yukuo Nishimura ,  Ken Eguchi ,  Hiroshi Matsuda ,  Masahiro Haruta ,  Yutaka Hirai ,  Takashi Nakagiri

    发明人： Yukuo Nishimura ,  Ken Eguchi ,  Hiroshi Matsuda ,  Masahiro Haruta ,  Yutaka Hirai ,  Takashi Nakagiri

    IPC分类号： B05D3/06 ,  B05D7/24 ,  C23C16/22 ,  C23C16/48 ,  H01L21/205

    CPC分类号： B05D1/60 ,  C23C16/22 ,  C23C16/482 ,  C23C16/483 ,  C23C16/488 ,  H01L21/0237 ,  H01L21/0245 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  B05D3/06

    摘要： A method of forming a deposited film comprises forming a gaseous atmosphere of at least one silicon compound selected from those having the formula (A), (B) or (C) as shown below in a deposition chamber in which a substrate is arranged, and exciting and decomposing said compound by utilization of light energy thereby to form a desired film containing silicon atoms on said substrate: ##STR1## wherein l represents 3, 4 or 5; and R represents H or SiH.sub.3 ; ##STR2## wherein R.sup.1 and R.sup.2 independently represent H or an alkyl group having 1 to 3 carbon atoms; m an integer of 3 to 7; and n an integer of 1 to 11;R.sup.1 --(Si.multidot.R.sup.2 R.sup.3).sub.p --R.sup.4 (c)wherein R.sup.1 and R.sup.4 independently represent a phenyl or naphthyl group which may be substituted with halogens, or an alkyl group having 1 to 11 carbon atoms; R.sup.2 and R.sup.3 independently represent H or CH.sub.3 ; and p represents an integer of 3 to 7.

    摘要翻译： 形成沉积膜的方法包括在其中布置基材的沉积室中形成选自具有如下所示的式（A），（B）或（C）的那些的至少一种硅化合物的气态气氛，以及 通过利用光能来激发和分解所述化合物，从而在所述基底上形成含有硅原子的所需膜;（A）其中l代表3,4或5; R表示H或SiH 3; （B）其中R1和R2独立地表示H或具有1至3个碳原子的烷基; m为3〜7的整数; n为1〜11的整数。 R1-（SixR2R3）p-R4（c）其中R1和R4独立地表示可被卤素取代的苯基或萘基或具有1至11个碳原子的烷基; R2和R3独立地表示H或CH3; p表示3〜7的整数。