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公开(公告)号：US5576060A
公开(公告)日：1996-11-19
申请号：US487561
申请日：1995-06-07
IPC分类号： C23C14/00 , C23C14/16 , C23C16/24 , C23C16/44 , C23C16/455 , C23C16/507 , C23C16/509 , G03G5/082 , H01L31/09 , H01L31/20 , C23C16/00 , B05D3/06
CPC分类号： C23C14/16 , C23C14/0036 , C23C14/0057 , C23C16/24 , C23C16/45523 , C23C16/507 , C23C16/509 , G03G5/08221 , G03G5/08228 , G03G5/08242 , G03G5/08278 , H01L31/095 , H01L31/202 , Y02E10/50 , Y02P70/521
摘要： A CVD process of forming a hydrogenated amorphous silicon film comprising not more than 40 atomic percent of hydrogen atoms is disclosed, which comprises introducing a silicon-containing gas and a gas containing impurity for controlling conductivity of said film into a film-forming space, wherein the concentration of the gas containing the impurity is controlled during film formation to vary the content of the impurity in the thickness direction of the amorphous silicon film.
摘要翻译： 公开了形成不超过40原子％氢原子的氢化非晶硅膜的CVD工艺，其包括将含硅气体和含有杂质的气体导入到成膜空间中，其中所述杂质用于控制所述膜的导电性，其中 在成膜期间控制含有杂质的气体的浓度以改变非晶硅膜的厚度方向上杂质的含量。
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2.发明授权
公开(公告)号：US4830946A
公开(公告)日：1989-05-16
申请号：US198582
申请日：1988-05-16
IPC分类号： G03G5/082
CPC分类号： G03G5/08235 , G03G5/08221 , G03G5/08292
摘要： An image-forming member for electrophotography has a photoconductive layer comprising a hydrogenated amorphous semiconductor composed of silicon and/or germanium as a matrix and at least one chemical modifier such as carbon, nitrogen and oxygen contained in the matrix.
摘要翻译： 用于电子照相的图像形成部件具有包含由硅和/或锗作为基体的氢化非晶半导体和基质中所含的至少一种化学改性剂如碳，氮和氧的光电导层。
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3.发明授权
公开(公告)号：US4766477A
公开(公告)日：1988-08-23
申请号：US885336
申请日：1986-07-11
申请人： Katsumi Nakagawa , Toshiyuki Komatsu , Yoshiyuki Osada , Satoshi Omata , Yutaka Hirai , Takashi Nakagiri
发明人： Katsumi Nakagawa , Toshiyuki Komatsu , Yoshiyuki Osada , Satoshi Omata , Yutaka Hirai , Takashi Nakagiri
IPC分类号： G02F1/136 , G02F1/1368 , H01L21/203 , H01L21/205 , H01L27/12 , H01L29/04 , H01L29/167 , H01L29/78 , H01L29/786 , H01L31/0368
CPC分类号： H01L31/03682 , H01L29/04 , H01L29/167 , H01L29/78 , H01L29/78675 , Y02E10/546 , Y10S148/122
摘要： A semiconductor device mainly comprises a semiconductor layer of a polycrystalline silicon film containing at least one atom selected from the group consisting of carbon, sulfur, nitrogen and oxygen as a constituent.
摘要翻译： 半导体器件主要包括含有选自由碳，硫，氮和氧组成的组中的至少一个原子的多晶硅膜的半导体层。
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4.发明授权Image-forming member for electrophotography comprising hydrogenated amorphous matrix of silicon and/or germanium 失效用于电子照相的图像形成部件包括硅和/或锗的氢化非晶基质
公开(公告)号：US4471042A
公开(公告)日：1984-09-11
申请号：US36226
申请日：1979-05-04
CPC分类号： G03G5/08235 , G03G5/08221 , G03G5/08292
摘要： An image-forming member for electrophotography has a photoconductive layer comprising a hydrogenated amorphous semiconductor composed of silicon and/or germanium as a matrix and at least one chemical modifier such as carbon, nitrogen and oxygen contained in the matrix.
摘要翻译： 用于电子照相的图像形成部件具有包含由硅和/或锗作为基体的氢化非晶半导体和基质中所含的至少一种化学改性剂如碳，氮和氧的光电导层。
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5.发明授权
公开(公告)号：US5756250A
公开(公告)日：1998-05-26
申请号：US484910
申请日：1995-06-07
IPC分类号： C23C14/00 , C23C14/16 , C23C16/24 , C23C16/44 , C23C16/455 , C23C16/507 , C23C16/509 , G03G5/082 , H01L31/09 , H01L31/20 , G03G13/22
CPC分类号： C23C14/16 , C23C14/0036 , C23C14/0057 , C23C16/24 , C23C16/45523 , C23C16/507 , C23C16/509 , G03G5/08221 , G03G5/08228 , G03G5/08242 , G03G5/08278 , H01L31/095 , H01L31/202 , Y02E10/50 , Y02P70/521
摘要： An electrophotographic apparatus employs a charger for charging a cylindrical photosensitive member having a photoconductive layer of amorphous silicon containing 10 to 40 atomic % hydrogen; an exposing station for imagewise exposing the member to form an electrostatic latent image; a developer station for developing the latent image to form a toner image; a transfer station for transferring the toner image to an image receiving sheet and a blade for cleaning the surface of the cylindrical member.
摘要翻译： 电子照相设备采用充电器来充电具有含有10至40原子％氢的非晶硅光导电层的圆柱形感光件; 用于对构件成像曝光以形成静电潜像的曝光站; 用于显影潜像以形成调色剂图像的显影剂站; 用于将调色剂图像转印到图像接收片材的转印站和用于清洁圆柱形构件的表面的刀片。
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6.发明授权
公开(公告)号：US5658703A
公开(公告)日：1997-08-19
申请号：US483154
申请日：1995-06-07
IPC分类号： C23C14/00 , C23C14/16 , C23C16/24 , C23C16/44 , C23C16/455 , C23C16/507 , C23C16/509 , G03G5/082 , H01L31/09 , H01L31/20 , G03G5/085
CPC分类号： C23C14/16 , C23C14/0036 , C23C14/0057 , C23C16/24 , C23C16/45523 , C23C16/507 , C23C16/509 , G03G5/08221 , G03G5/08228 , G03G5/08242 , G03G5/08278 , H01L31/095 , H01L31/202 , Y02E10/50 , Y02P70/521
摘要： A layer of amorphous silicon containing H, preferably 10-40 atomic % H, is used as a photoconductive layer for electrophotographic photosensitive member.
摘要翻译： 使用含有H，优选10-40原子％H的非晶硅层作为电子照相感光构件的光电导层。
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7.发明授权
公开(公告)号：US4613558A
公开(公告)日：1986-09-23
申请号：US763214
申请日：1985-08-07
CPC分类号： H01L31/202 , G03G5/08235 , G03G5/0825 , Y02E10/50 , Y02P70/521
摘要： Image-forming member for electrophotography comprising a charge generation layer composed of hydrogenated amorphous silicon.
摘要翻译： 用于电子照相的图像形成部件包括由氢化非晶硅构成的电荷产生层。
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公开(公告)号：US4565731A
公开(公告)日：1986-01-21
申请号：US418293
申请日：1982-09-15
CPC分类号： G03G5/08221 , G03G5/08214 , G03G5/08235 , G03G5/08292 , Y10S428/913 , Y10T428/24942 , Y10T428/265
摘要： An image-forming member for electro-photography has a photoconductive layer comprising a hydrogenated amorphous semiconductor composed of silicon and/or germanium as a matrix and at least one chemical modifier such as carbon, nitrogen and oxygen contained in the matrix.
摘要翻译： 用于电摄影的图像形成部件具有光电导层，该光电导层包括由硅和/或锗作为基质构成的氢化非晶半导体和基质中所含的至少一种化学改性剂，例如碳，氮和氧。
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公开(公告)号：US4551405A
公开(公告)日：1985-11-05
申请号：US565146
申请日：1983-12-23
CPC分类号： H01L31/202 , G03G5/08235 , G03G5/0825 , Y02E10/50 , Y02P70/521
摘要： Image-forming member for electrophotography comprising a charge generation layer composed of hydrogenated amorphous silicon.
摘要翻译： 用于电子照相的图像形成部件包括由氢化非晶硅构成的电荷产生层。
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10.发明授权
公开(公告)号：US4265991A
公开(公告)日：1981-05-05
申请号：US971114
申请日：1978-12-19
IPC分类号： C23C14/00 , C23C14/16 , C23C16/24 , C23C16/44 , C23C16/455 , C23C16/507 , C23C16/509 , G03G5/082 , H01L31/09 , H01L31/20
CPC分类号： C23C14/16 , C23C14/0036 , C23C14/0057 , C23C16/24 , C23C16/45523 , C23C16/507 , C23C16/509 , G03G5/08221 , G03G5/08228 , G03G5/08242 , G03G5/08278 , H01L31/095 , H01L31/202 , Y02E10/50 , Y02P70/521
摘要： A layer of amorphous silicon containing H, preferably 10-40 atomic %H, is used as a photoconductive layer for electrophotographic photosensitive member.
摘要翻译： 使用含有H，优选10-40原子％H的非晶硅层作为电子照相感光构件的光电导层。
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