摘要:
This invention relates to photographic materials containing an ion pair compound which has a quaternary nitrogen atom as a cation and a boron compound as an anion.
摘要:
A method for processing an exposed color photographic material containing a color developing agent or precursor by developing with a color developer which is replenished.
摘要:
A silver halide color photographic light-sensitive material is disclosed, which is improved in the color forming efficiency, the color reproducibility and the resistivity of color image against heat and humidity. The photographic material comprises a silver halide emulsion layer which contains a pyrazoloazole type cyan coupler having a group represented by Formula I which is directly bonded to the azole ring of the pyrazoloazole coupler:--(X.dbd.Y)n--R.sub.1 (I)wherein X and Y each is a substituted or unsubstituted methine group or a nitrogen atom; R.sub.1 is a hydrogen atom or a substituent; and n is an integer of 1 or 2, provided that two of Xs and two of Ys may be the same or different from each other when n is 2, and two of either X, Y and R.sub.1 are allowed to be bonded each other to form a ring other than benzene ring.
摘要:
A silver halide photographic material is disclosed which comprises a support coated with photographic layers including one or more silver halide emulsion layers, at least one of said silver halide emulsion layers containing silver halide grains with a silver iodide content of 3.0-15 mol %, and at least one of said photographic layers containing a compound represented by the following general formula (I): ##STR1## where Y is an aromatic group or a 5- or 6-membered heterocyclic group.
摘要:
A silver halide color photographic material that has at least one silver halide emulsion layer on a support is disclosed. Said silver halide emulsion layer contains at least one magenta coupler having the following formula: ##STR1## wherein R.sub.1 is a tertiary alkyl group; R.sub.2 is a primary alkyl group; and X is a halogen atom.
摘要:
A silver halide color photographic light-sensitive material containing a phenol cyan coupler having an ureido group in the 2-position dispersed in a phthalic ester.
摘要:
The inspection apparatus disclosed generates an electron beam, an acceleration electrode accelerates the electron beam, a convergence lens converges the electron beam, an electron beam deflector scans the beam over a sample, an objective lens converges the electron beam on the sample, a detector located between the sample and the objective lens detects charged particles emitted from the sample, a power supply applies a retarding voltage to the sample for decelerating the electron beam to the sample, an electrode is disposed between the objective lens and the sample, and a voltage is generated between the sample and the electrode by said electrode, the voltage being determined depending on the sample. The apparatus solves problems encountered in conventional inspection systems.
摘要:
A circuit pattern inspection method and an apparatus therefor, in which the whole of a portion to be inspected of a sample to be inspected is made to be in a predetermined charged state, the portion to be inspected is irradiated with an image-forming high-density electron beam while scanning the electron beam, secondary charged particles are detected at a portion irradiated with the electron beam after a predetermined period of time from an instance when the electron beam is irradiated, an image is formed on the basis of the thus detected secondary charged particle signal, and the portion to be inspected is inspected by using the thus formed image.
摘要:
To make possible the in-line inspection of a pattern of an insulating material.A patterned wafer 40 formed with a pattern by a resist film is placed on a specimen table 21 of a patterned wafer inspection apparatus 1 in opposed relation to a SEM 3. An electron beam 10 of a large current is emitted from an electron gun 11 and the pattern of the patterned wafer is scanned only once at a high scanning rate. The secondary electrons generated by this scanning from the patterned wafer are detected by a secondary electron detector 16 thereby to acquire an electron beam image. Using this electron beam image, the comparative inspection is conducted on the patterned wafer through an arithmetic operation unit 32 and a defect determining unit 33. Since an electron beam image of high contrast can be obtained by scanning an electron beam only once, a patterned wafer inspection method using a SEM can be implemented in the IC fabrication method.