摘要:
A fluorocarbon copolymer-insulated wire comprising, around a conductor, an insulating layer made of a composition comprising an ethylene-tetrafluoroethylene copolymer and an unsintered tetrafluoroethylene-propylene copolymer, which is resistant to heat, abrasion and oil, and improved in flexibility. The wire can be efficiently installed in a narrow space in various equipments and enables easy wiring work.
摘要:
A composition for filling the spaces in bores penetrating walls and floors of buildings and having electric wires and cables extending therethrough or for filling the clearances at the joints of interior finishing materials of buildings. The composition comprises (a) 100 parts by weight of a curable polychloroprene in a liquid state at room temperature, (b) about 200 to about 700 parts by weight of a hydrated metallic oxide, and (c) about 20 to about 100 parts by weight of a heat-resistant fibrous material. The components (b) and (c) are contained in a combined amount of at least about 250 parts by weight per 100 parts by weight of the component (a). The composition will not soften, sag or drip in molten drops even when subjected to the high-temperature conditions of a fire, and gives a tough residual product retaining the original shape when burned and ashed, effectively preventing the spread of fire and assuring outstanding smoketightness.
摘要:
A cylindrical apparatus for the growth of epitaxial layers having disposed inside a bell jar a susceptor provided thereon with pockets for retaining a substrate is disclosed. It allows the flow rate of a raw material gas inside the apparatus to be uniformized, the fluctuation of film thickness of epitaxial layers within one batch to be repressed below 5%, and the fluctuation of film thickness of an epitaxial layer in the substrate to be decreased by equalizing the gap area between the peripheral surface of the susceptor and the internal wall surface of the bell jar at least in the lateral wall portions of the bell jar confronting the substrates on the susceptor.
摘要:
A method and apparatus for uniformizing a bonded SOI (silicon on insulator) thin film layer by the reaction of chemical vapor-phase corrosion excited by the ultraviolet light, which effect the measurement of film thickness efficiently and conveniently and consequently attaining highly accurate control of the dispersion of thickness of the thin film layer without requiring the substrate to be removed from the reaction vessel for chemical vapor-phase corrosion on each occasion of the measurement or necessitating installation of a mechanism for alteration of the position of measurement inside or outside the reaction vessel are disclosed. The measurement of film thickness is carried out by keeping observation of interference fringes due to distribution of thickness of the film layer.
摘要:
A method for analyzing impurities within a silicon wafer in a convenient and simple manner with high accuracy and sensitivity. In a first example 1, a silicon wafer is subjected on its surface to a sandblasting process with use of powder of SiO2 and then to a thermal oxidation process in a dry-oxygen gas atmosphere to easily move impurities present within the silicon wafer into a distorted layer and to form a thermal oxide film and a surface layer of the wafer positioned directly therebelow and containing the distorted layer. The thermal oxide film or the surface layer containing the distorted layer is dissolved with, e.g., a solution of hydrofluoric acid to recover and analyze the dissolved solution. In a comparative example 1, the same processes as in the example 1 are carried out to analyze a predetermined solution, except that the sandblasting process is omitted. In a comparative example 2, the same processing steps as in the example 1 are carried out to analyze a predetermined solution, except that the formation of the thermal oxide film is replaced by a native oxide film without applying any heat. In both of the comparative examples 1 and 2, neither Ni nor Cu is detected; whereas, in the example 1, an Ni content is 100×1010 atoms/cm2 and a Cu content is 1×1010 atoms/cm2.
摘要翻译:一种以高精度和灵敏度以方便简单的方式分析硅晶片内的杂质的方法。在第一实施例1中,使用SiO 2粉末将硅晶片在其表面上进行喷砂处理,然后进行热处理 氧化工艺在干氧气体气氛中容易地将存在于硅晶片内的杂质移动到变形层中,并形成热氧化膜和晶片的表面层,其直接位于其下方并且包含失真层。 含有变形层的热氧化膜或表面层用例如氢氟酸的溶液溶解以回收和分析溶解的溶液。 在比较例1中,除了不进行喷砂处理以外,进行与实施例1相同的处理以分析预定的溶液。 在比较例2中,进行与实施例1相同的处理步骤,以分析预定的溶液,除了热氧化膜的形成被自然氧化膜替代而不施加任何热量。 在比较例1和2中,既不检测Ni也不Cu, 而在实施例1中,Ni含量为100×10 10原子/ cm 2,Cu含量为1×10 10原子/ cm 2。
摘要:
A memory is provided in a tape cassette and it consists of a program information area for recording information on each program recorded on a tape and a tape information area for recording information on the entire tape. If this tape cassette is used by a video cassette recorder having a full function to drive the memory and by a video cassette recorder having a limited function to drive it, the program information recorded in the memory is consistent with the programs actually recorded on the tape. For example, a tape erasing prevention flag is set in the tape information area, while a program erasing prevention flag is set for each program in the program information area. In a different example, a tape inconsistency flag is set in the tape information area, while a program inconsistency flag is set for each program in the program information area. The data in the memory can be corrected by using such flags according to the programs actually recorded on the tape.
摘要:
Single crystal silicon islands in a dielectric-separation substrate are separated completely and finished in a uniform thickness by preparatorily denuding a single crystal silicon substrate of a warpage suffered to occur therein.This dielectric-separation substrate is produced by a method which comprises forming a thermal oxide film on a single crystal silicon substrate having grooves incised in advance therein, then forming an irreversibly thermally shrinkable film on the rear surface of said single crystal silicon substrate prior to depositing a polycrystalline silicon thereon, then depositing a polycrystalline silicon on said single crystal silicon substrate, and thereafter grinding said single crystal silicon substrate in conjunction with said irreversibly thermally shrinkable film.
摘要:
A vertical tabulation control for a high speed printer comprises a presettable memory, such as a random access memory (RAM), for storing vertical tabulation addresses, a counter for counting the number of line feed operations, a comparator for developing a continuous line feed termination command when the contents of the counter reach the preset vertical tabulation address, and a rechargeable battery means which is charged when the printer is activated through a power switch. The rechargeable battery supplies the presettable memory and the counter with a necessary voltage for maintaining their contents when the power supply through the power switch is terminated.
摘要:
An object of the present invention is to provide a nitride semiconductor light-emitting device in which contact resistance generated between an n-contact layer and an n-side electrode is effectively reduced while maintaining satisfactory external quantum efficiency, and a method of efficiently producing the nitride semiconductor light-emitting device. Specifically, the present invention characteristically provides a nitride semiconductor light-emitting device having a semiconductor laminated body including an n-type laminate, a light-emitting layer and a p-type laminate, and an n-side electrode and a p-side electrode, characterized in that: the n-type laminate includes an n-contact layer made of an AlxGa1-xN material (0.7≦x≦1.0) and an n-clad layer provided on the n-contact layer; and an interlayer made of an AlyGa1-yN material (0≦y≦0.5) is provided on a partially exposed portion, on the light-emitting layer side, of the n-contact layer.
摘要翻译:本发明的目的是提供一种氮化物半导体发光器件,其中在保持令人满意的外部量子效率的同时,在n接触层和n侧电极之间产生的接触电阻被有效地降低,并且有效地产生 氮化物半导体发光器件。 具体地说,本发明特征在于提供一种具有半导体层叠体的氮化物半导体发光元件,该半导体层叠体包括n型层叠体,发光层和p型层叠体,以及n侧电极和p侧电极 其特征在于,所述n型层压体包括由Al x Ga 1-x N材料(0.7& N e; x≦̸ 1.0)构成的n接触层和设置在所述n接触层上的n包层; 并且在n接触层的发光层侧的部分曝光部分上设置由Al y Ga 1-y N材料制成的中间层(0& nlE; y≦̸ 0.5)。
摘要:
To provide a light emitting element, having: a lamination structure including a first conductive layer and a second conductive layer with a light emitting layer interposed between them; a groove structure in which the second conductive layer and the light emitting layer are divided into large and small two parts; a second conductive electrode pad that is electrically connected to the second conductive layer on the divided larger second conductive layer, a first conductive electrode pad on the divided smaller second conductive layer, and two or more electrical contacts connected to the first conductive layer so as to be independent from each other, by a conductive wiring extending to the first conductive layer, with the first conductive electrode pad as a start point.