公开(公告)号：US5427052A

公开(公告)日：1995-06-27

申请号：US873751

申请日：1992-04-27

申请人： Yutaka Ohta ,  Masatake Nakano ,  Masatake Katayama ,  Takao Abe

发明人： Yutaka Ohta ,  Masatake Nakano ,  Masatake Katayama ,  Takao Abe

IPC分类号： H01L21/302 ,  G01B11/06 ,  H01L21/3065 ,  H01L21/66 ,  H01L21/762 ,  H01L27/12 ,  C30B25/16

CPC分类号： H01L21/76251 ,  G01B11/0683 ,  H01L21/3065 ,  H01L22/12 ,  H01L22/20

摘要： A method and apparatus for uniformizing a bonded SOI (silicon on insulator) thin film layer by the reaction of chemical vapor-phase corrosion excited by the ultraviolet light, which effect the measurement of film thickness efficiently and conveniently and consequently attaining highly accurate control of the dispersion of thickness of the thin film layer without requiring the substrate to be removed from the reaction vessel for chemical vapor-phase corrosion on each occasion of the measurement or necessitating installation of a mechanism for alteration of the position of measurement inside or outside the reaction vessel are disclosed. The measurement of film thickness is carried out by keeping observation of interference fringes due to distribution of thickness of the film layer.

摘要翻译： 通过由紫外光激发的化学气相腐蚀的反应使接合的SOI（绝缘体上硅）层均匀化的方法和装置，其有效和方便地实现膜厚度的测量，从而实现对 在每次测量时，不需要从用于化学气相腐蚀的反应容器中除去衬底的薄膜层的厚度分散，或者需要安装用于改变反应容器内部或外部的测量位置的机构 被披露。 通过保持观察由于膜层的厚度分布引起的干涉条纹来进行膜厚度的测量。

公开(公告)号：US5376215A

公开(公告)日：1994-12-27

申请号：US151209

申请日：1993-11-12

申请人： Yutaka Ohta ,  Masatake Nakano ,  Masatake Katayama ,  Takao Abe

发明人： Yutaka Ohta ,  Masatake Nakano ,  Masatake Katayama ,  Takao Abe

IPC分类号： H01L21/302 ,  G01B11/06 ,  H01L21/3065 ,  H01L21/66 ,  H01L21/762 ,  H01L27/12 ,  B44C1/22 ,  C03C15/00 ,  H01L21/306

CPC分类号： H01L21/76251 ,  G01B11/0683 ,  H01L21/3065 ,  H01L22/12 ,  H01L22/20

摘要： A method and apparatus for uniformizing a bonded SOI (silicon on insulator) thin film layer by the reaction of chemical vapor-phase corrosion excited by the ultraviolet light, which effect the measurement of film thickness efficiently and conveniently and consequently attaining highly accurate control of the dispersion of thickness of the thin film layer without requiring the substrate to be removed from the reaction vessel for chemical vapor-phase corrosion on each occasion of the measurement or necessitating installation of a mechanism for alteration of the position of measurement inside or outside the reaction vessel are disclosed. The measurement of film thickness is carried out by keeping observation of interference fringes due to distribution of thickness of the film layer.

摘要翻译： 通过由紫外光激发的化学气相腐蚀的反应使接合的SOI（绝缘体上硅）层均匀化的方法和装置，其有效和方便地实现膜厚度的测量，从而实现对 在每次测量时，不需要从用于化学气相腐蚀的反应容器中除去衬底的薄膜层的厚度分散，或者需要安装用于改变反应容器内部或外部的测量位置的机构 被披露。 通过保持观察由于膜层的厚度分布引起的干涉条纹来进行膜厚度的测量。

公开(公告)号：US5223080A

公开(公告)日：1993-06-29

申请号：US799182

申请日：1991-11-27

申请人： Yutaka Ohta ,  Masatake Katayama ,  Takao Abe ,  Yasuaki Nakazato

发明人： Yutaka Ohta ,  Masatake Katayama ,  Takao Abe ,  Yasuaki Nakazato

IPC分类号： H01L21/66 ,  C30B33/00 ,  G01B11/06 ,  H01L21/20 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/762 ,  H01L21/84

CPC分类号： C30B29/06 ,  C30B33/00 ,  G01B11/0683 ,  H01L21/3065 ,  H01L21/76251 ,  H01L22/12 ,  H01L22/20

摘要： A method for controlling the thickness of a single crystal thin-film silicon layer bonded on a dielectric substrate in a SOI substrate thereby effecting conversion of said single crystal silicon layer to a thin film is disclosed. To be more precise, said method comprises selectively and hypothetically dividing the entire surface of said single crystal silicon layer destined to undergo a chemical vapor-phase corrosion reaction for the sake of said conversion into necessary minute sections and, at the sametime, taking preparatory measurement of the thickness of said single crystal silicon layer in each of said minute sections, and effecting on each of said minute sections said conversion to a thin film by a chemical vapor-phase corrosion reaction adjusted in accordance with the measured thickness of layer. The conversion to a thin film is attained with the dispersion of thickness of the single crystal silicon layer controlled with high accuracy.

公开(公告)号：US5183783A

公开(公告)日：1993-02-02

申请号：US811958

申请日：1991-12-23

申请人： Yutaka Ohta ,  Konomu Ohki ,  Masatake Katayama

发明人： Yutaka Ohta ,  Konomu Ohki ,  Masatake Katayama

IPC分类号： H01L21/762

CPC分类号： H01L21/76297 ,  Y10S438/928 ,  Y10S438/977

摘要： Single crystal silicon islands in a dielectric-separation substrate are separated completely and finished in a uniform thickness by preparatorily denuding a single crystal silicon substrate of a warpage suffered to occur therein.This dielectric-separation substrate is produced by a method which comprises forming a thermal oxide film on a single crystal silicon substrate having grooves incised in advance therein, then forming an irreversibly thermally shrinkable film on the rear surface of said single crystal silicon substrate prior to depositing a polycrystalline silicon thereon, then depositing a polycrystalline silicon on said single crystal silicon substrate, and thereafter grinding said single crystal silicon substrate in conjunction with said irreversibly thermally shrinkable film.

公开(公告)号：US5124274A

公开(公告)日：1992-06-23

申请号：US791518

申请日：1991-11-14

申请人： Konomu Ohki ,  Yutaka Ohta ,  Masatake Katayama

发明人： Konomu Ohki ,  Yutaka Ohta ,  Masatake Katayama

IPC分类号： H01L21/3213 ,  H01L21/76 ,  H01L21/762 ,  H01L21/763

CPC分类号： H01L21/32136 ,  H01L21/76264 ,  H01L21/76297 ,  H01L21/763 ,  H01L21/76275 ,  H01L21/76286

摘要： After the separating grooves has been formed, the polycrystalline silicon deposited as bonded to the single crystal substrate as a supporting base, and the polycrystalline silicon layer ground and polished until the oxide film in the area other than the separating grooves is exposed, the present invention etches the polycrystalline silicon layer on the separating grooves with mixed acid composed of hydrofluoric acid and nitric acid until its thickness equals that of the separating oxide film and subsequently removes the oxide film in the area other than the separating grooves with hydrofluoric acid, As a result, the otherwise inevitable occurrence of projections of polycrystalline silicon can be precluded. When the dielectric-separation substrate obtained by the present invention is used in manufacturing a semiconductor device, therefore, the occurrence of particles due to the chipping of the projections of polycrystalline silicon and the breakage of distributed wires in the produced device can be prevented.

公开(公告)号：US5393370A

公开(公告)日：1995-02-28

申请号：US139849

申请日：1993-10-22

申请人： Yutaka Ohta ,  Masatake Katayama ,  Isao Moroga

发明人： Yutaka Ohta ,  Masatake Katayama ,  Isao Moroga

IPC分类号： H01L21/302 ,  G01B11/06 ,  H01L21/3065 ,  H01L21/66 ,  H01L21/762 ,  H01L27/12 ,  B44C1/22 ,  C03C15/00 ,  C03C25/06

CPC分类号： G01B11/0683 ,  H01L21/3065 ,  H01L21/76251 ,  H01L22/12 ,  H01L22/20 ,  Y10S438/977

摘要： To provide a method of making a SOI film having a more uniform thickness in a SOI substrate which makes it possible to keep the variance at .+-.0.3 micrometers or less throughout the entire surface of the substrate, even for SOI substrates with a SOI film thickness between 1 micrometer and 10 micrometers. The surface of a SOI substrate is divided into a plurality of sections, then the SOI film thickness is measured for each section Wi (i=1-n) by means of the spectral interference method using an optical fiber cable, and, simultaneously, the SOI film is etched down to a prescribed thickness by a dry etching device, and thus a desired value and a variance (.+-.0.3 micrometers) of the SOI film thickness is obtained.

摘要翻译： 为了提供在SOI衬底中制造具有更均匀厚度的SOI膜的方法，其使得可以在衬底的整个表面上将偏差保持在+/- 0.3微米或更小，即使对于具有SOI膜的SOI衬底 厚度介于1微米至10微米之间。 SOI衬底的表面被分成多个部分，然后通过使用光纤电缆的光谱干涉法测量每个部分Wi（i = 1-n）的SOI膜厚度，同时， 通过干蚀刻装置将SOI膜蚀刻到规定的厚度，从而获得SOI膜厚度的期望值和方差（+/- 0.3微米）。

公开(公告)号：US5336634A

公开(公告)日：1994-08-09

申请号：US25256

申请日：1993-03-02

申请人： Masatake Katayama ,  Makoto Sato ,  Yutaka Ohta ,  Mitsuru Sugita ,  Konomu Ohki

发明人： Masatake Katayama ,  Makoto Sato ,  Yutaka Ohta ,  Mitsuru Sugita ,  Konomu Ohki

IPC分类号： H01L21/306 ,  H01L21/308 ,  H01L21/762 ,  H01L21/763 ,  H01L21/76

CPC分类号： H01L21/30608 ,  H01L21/3083 ,  H01L21/76264 ,  H01L21/763 ,  H01L21/76275 ,  H01L21/76286 ,  Y10S148/012 ,  Y10S148/05

摘要： A dielectrically isolated substrate is comprised of a single-crystal silicon substrate or bond substrate and a single-crystal silicon substrate or base substrate bonded together into a composite structure. The bond substrate has a (110) plane as a main crystal plane and is provided with vertically walled moats and substantially squared islands positioned adjacent to the moats. The moats and islands result from anisotropic etching using a specific mask pattern. Also disclosed is a process for producing the composite structure.

摘要翻译： 介电隔离的衬底由单晶硅衬底或接合衬底和结合在一起的复合结构中的单晶硅衬底或基底衬底构成。 接合衬底具有（110）面作为主晶面并且设置有垂直壁壁的护城河和邻近护城河定位的基本上平方的岛。 使用特定掩模图案的各向异性蚀刻产生护城河和岛屿。 还公开了一种复合结构的制造方法。

公开(公告)号：US5441571A

公开(公告)日：1995-08-15

申请号：US127729

申请日：1993-09-28

申请人： Yutaka Ohta ,  Yusho Hoshina ,  Takeshi Arai

发明人： Yutaka Ohta ,  Yusho Hoshina ,  Takeshi Arai

IPC分类号： H01L21/205 ,  C30B25/08 ,  C30B25/12 ,  C30B25/14 ,  C23C16/00

CPC分类号： C30B25/14 ,  C30B25/12

摘要： A cylindrical apparatus for the growth of epitaxial layers having disposed inside a bell jar a susceptor provided thereon with pockets for retaining a substrate is disclosed. It allows the flow rate of a raw material gas inside the apparatus to be uniformized, the fluctuation of film thickness of epitaxial layers within one batch to be repressed below 5%, and the fluctuation of film thickness of an epitaxial layer in the substrate to be decreased by equalizing the gap area between the peripheral surface of the susceptor and the internal wall surface of the bell jar at least in the lateral wall portions of the bell jar confronting the substrates on the susceptor.

摘要翻译： 公开了一种用于生长外延层的圆柱形装置，其具有设置在喇叭口内的基座，其上设置有用于保持基板的凹穴。 允许装置内的原料气体的流量均匀化，一批内的外延层的膜厚的波动将抑制在5％以下，并且衬底中的外延层的膜厚度的波动为 至少在基座上的基板面对的钟形瓶的侧壁部分中使基座的周面与钟罩的内壁表面之间的间隙面积均匀化而减小。

公开(公告)号：US4255318A

公开(公告)日：1981-03-10

申请号：US58334

申请日：1979-07-17

申请人： Tamotsu Kaide ,  Toshikazu Gozen ,  Jinichi Taniguchi ,  Yutaka Ohta

发明人： Tamotsu Kaide ,  Toshikazu Gozen ,  Jinichi Taniguchi ,  Yutaka Ohta

IPC分类号： C08K3/22 ,  C09D5/34 ,  C08K7/14

CPC分类号： C09D5/34 ,  C08K3/22 ,  Y10S260/24

摘要： A composition for filling the spaces in bores penetrating walls and floors of buildings and having electric wires and cables extending therethrough or for filling the clearances at the joints of interior finishing materials of buildings. The composition comprises (a) 100 parts by weight of a curable polychloroprene in a liquid state at room temperature, (b) about 200 to about 700 parts by weight of a hydrated metallic oxide, and (c) about 20 to about 100 parts by weight of a heat-resistant fibrous material. The components (b) and (c) are contained in a combined amount of at least about 250 parts by weight per 100 parts by weight of the component (a). The composition will not soften, sag or drip in molten drops even when subjected to the high-temperature conditions of a fire, and gives a tough residual product retaining the original shape when burned and ashed, effectively preventing the spread of fire and assuring outstanding smoketightness.

摘要翻译： 用于填充穿过建筑物的墙壁和地板的孔中的空间的组合物，并且具有延伸穿过其中的电线和电缆或用于填充建筑物内部装饰材料的接合处的间隙。 组合物包含（a）100重量份在室温下为液态的可固化聚氯丁二烯，（b）约200至约700重量份的水合金属氧化物，和（c）约20至约100重量份 耐热纤维材料的重量。 组分（b）和（c）以每100重量份组分（a）至少约250重量份的总量含有。 即使遭受火灾高温条件下，组合物也不会软化，下垂或滴落在熔融液滴中，并且在烧焦和灰化时产生保持原始形状的坚硬残留物，有效防止火势蔓延并确保优异的烟雾度 。

公开(公告)号：US06174740B1

公开(公告)日：2001-01-16

申请号：US08714563

申请日：1996-09-16

申请人： Yutaka Ohta ,  Hirofumi Nishijo ,  Akira Kosugi

发明人： Yutaka Ohta ,  Hirofumi Nishijo ,  Akira Kosugi

IPC分类号： H01L21302

CPC分类号： G01N33/20

摘要： A method for analyzing impurities within a silicon wafer in a convenient and simple manner with high accuracy and sensitivity. In a first example 1, a silicon wafer is subjected on its surface to a sandblasting process with use of powder of SiO2 and then to a thermal oxidation process in a dry-oxygen gas atmosphere to easily move impurities present within the silicon wafer into a distorted layer and to form a thermal oxide film and a surface layer of the wafer positioned directly therebelow and containing the distorted layer. The thermal oxide film or the surface layer containing the distorted layer is dissolved with, e.g., a solution of hydrofluoric acid to recover and analyze the dissolved solution. In a comparative example 1, the same processes as in the example 1 are carried out to analyze a predetermined solution, except that the sandblasting process is omitted. In a comparative example 2, the same processing steps as in the example 1 are carried out to analyze a predetermined solution, except that the formation of the thermal oxide film is replaced by a native oxide film without applying any heat. In both of the comparative examples 1 and 2, neither Ni nor Cu is detected; whereas, in the example 1, an Ni content is 100×1010 atoms/cm2 and a Cu content is 1×1010 atoms/cm2.

摘要翻译： 一种以高精度和灵敏度以方便简单的方式分析硅晶片内的杂质的方法。在第一实施例1中，使用SiO 2粉末将硅晶片在其表面上进行喷砂处理，然后进行热处理 氧化工艺在干氧气体气氛中容易地将存在于硅晶片内的杂质移动到变形层中，并形成热氧化膜和晶片的表面层，其直接位于其下方并且包含失真层。 含有变形层的热氧化膜或表面层用例如氢氟酸的溶液溶解以回收和分析溶解的溶液。 在比较例1中，除了不进行喷砂处理以外，进行与实施例1相同的处理以分析预定的溶液。 在比较例2中，进行与实施例1相同的处理步骤，以分析预定的溶液，除了热氧化膜的形成被自然氧化膜替代而不施加任何热量。 在比较例1和2中，既不检测Ni也不Cu， 而在实施例1中，Ni含量为100×10 10原子/ cm 2，Cu含量为1×10 10原子/ cm 2。