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121 条记录 (耗时 0.039 秒)

    Metal-carbonyl-containing fire extinguishing composition
    4.
    发明授权
    Metal-carbonyl-containing fire extinguishing composition 有权

    公开(公告)号：US09636533B2

    公开(公告)日：2017-05-02

    申请号：US14367418

    申请日：2012-08-16

    申请人： Wei Tian ,  Tengfei Zhai ,  Tao Ji

    发明人： Wei Tian ,  Tengfei Zhai ,  Tao Ji

    IPC分类号： A62D1/06 ,  C06B23/04 ,  A62D1/00

    CPC分类号： A62D1/06 ,  A62D1/0007 ,  C06B23/04

    摘要： A metal-carbonyl-containing fire extinguishing composition comprises metal carbonyl complexes. The fire extinguishing composition uses a pyrotechnic agent as a heat source and a power source. A high temperature in combustion of the pyrotechnic agent enables the fire extinguishing composition to decompose or react under heat; produced fire extinguishing substances are sprayed out together with the pyrotechnic agent, thereby achieving a fire extinguishing objective. In the fire extinguishing composition, by selecting preferable components and optimizing contents of the components, an optimum formula of the fire extinguishing composition is determined, thereby greatly improving the efficacy of the fire extinguishing composition. In addition, efficacies of the components in the fire extinguishing composition are fully utilized, which improves an effective utilization rate of the fire extinguishing composition.

    Tunneling magneto-resistive sensors with buffer layers
    6.
    发明授权
    Tunneling magneto-resistive sensors with buffer layers 有权
    隧道磁阻传感器与缓冲层

    公开(公告)号：US08922956B2

    公开(公告)日：2014-12-30

    申请号：US13152860

    申请日：2011-06-03

    申请人： Bin Lu ,  Qing He ,  Mark Covington ,  Yunhao Xu ,  Wei Tian

    发明人： Bin Lu ,  Qing He ,  Mark Covington ,  Yunhao Xu ,  Wei Tian

    IPC分类号： G11B5/39 ,  G01R33/09

    CPC分类号： H01L43/08 ,  G01R33/098 ,  G11B5/3909 ,  G11B2005/3996 ,  H01L43/02

    摘要： In certain embodiments, a tunneling magneto-resistive (TMR) sensor includes a sensor stack positioned between a seed layer and a cap layer. The seed layer includes a first buffer layer that includes a non-magnetic nickel alloy.In certain embodiments, a sensor stack includes a top and bottom shield and a seed layer positioned adjacent to the bottom shield. The seed layer has a first buffer layer that includes a nickel alloy.

    摘要翻译： 在某些实施例中，隧道磁阻（TMR）传感器包括位于种子层和覆盖层之间的传感器堆叠。 种子层包括包含非磁性镍合金的第一缓冲层。 在某些实施例中，传感器堆叠包括顶部和底部屏蔽以及邻近底部屏蔽定位的种子层。 种子层具有包括镍合金的第一缓冲层。

    EVOLVED UNIVERSAL MOBILE TELECOMMUNICATION RADIO ACCESS NETWORK SYSTEM AND TASK TRACKING METHOD THEREOF
    9.
    发明申请
    EVOLVED UNIVERSAL MOBILE TELECOMMUNICATION RADIO ACCESS NETWORK SYSTEM AND TASK TRACKING METHOD THEREOF 有权
    演进通用移动电信无线接入网络系统及其任务追踪方法

    公开(公告)号：US20130100892A1

    公开(公告)日：2013-04-25

    申请号：US13807585

    申请日：2010-12-21

    申请人： Wei Tian

    发明人： Wei Tian

    IPC分类号： H04W40/00

    CPC分类号： H04W40/00 ,  H04W24/00 ,  H04W28/18 ,  H04W48/08 ,  H04W74/00

    摘要： The disclosure claims an Evolved Universal Mobile Telecommunication System (UMTS) Radio Access Network (E-UTRAN) system and a task tracking method thereof. The method comprises the steps of: creating a message, which carries the parameters of multiple tasks for tracking a same user; sending the message to an Evolved NodeB (eNodeB), which is used for the eNodeB to create multiple tasks to track the user according to the parameters. The disclosure also claims an E-UTRAN system, which comprises: a creation module, configured to create a message which carries the parameters of multiple tasks for tracking a same user; a sending module, configured to send the message to the eNodeB; an eNodeB, configured to establish multiple tasks to track the user according to the parameters. The disclosure can guarantee that multiple tasks track one appointed user synchronously.

    摘要翻译： 本发明要求演进的通用移动电信系统（UMTS）无线电接入网络（E-UTRAN）系统及其任务跟踪方法。 该方法包括以下步骤：创建一个消息，该消息携带用于跟踪同一用户的多个任务的参数; 将消息发送到演进节点B（eNodeB），其用于eNodeB，以根据参数创建多个任务来跟踪用户。 本公开还要求一种E-UTRAN系统，其包括：创建模块，被配置为创建携带用于跟踪相同用户的多个任务的参数的消息; 发送模块，被配置为将所述消息发送到所述eNodeB; eNodeB，被配置为根据参数建立多个任务来跟踪用户。 本公开可以保证多个任务同步跟踪一个指定的用户。

    Nano-dimensional non-volatile memory cells
    10.
    发明授权
    Nano-dimensional non-volatile memory cells 有权
    纳米级非易失性存储单元

    公开(公告)号：US08367464B2

    公开(公告)日：2013-02-05

    申请号：US13209809

    申请日：2011-08-15

    申请人： Venugopalan Vaithyanathan ,  Wei Tian ,  Insik Jin

    发明人： Venugopalan Vaithyanathan ,  Wei Tian ,  Insik Jin

    IPC分类号： H01L21/00

    CPC分类号： H01L45/1233 ,  H01L27/2463 ,  H01L27/2472 ,  H01L45/085 ,  H01L45/141 ,  H01L45/143 ,  H01L45/144 ,  H01L45/145 ,  H01L45/146 ,  H01L45/147 ,  H01L45/1641 ,  H01L45/1675

    摘要： A non-volatile memory cell that includes a first electrode; a second electrode; and an electrical contact region that electrically connects the first electrode and the second electrode, the electrical contact region has a end portion and a continuous side portion, and together, the end portion and the continuous side portion form an open cavity, wherein the memory cell has a high resistance state and a low resistance state that can be switched by applying a voltage across the first electrode and the second electrode.

    摘要翻译： 一种包括第一电极的非易失性存储单元; 第二电极; 以及电接触区域，其电连接所述第一电极和所述第二电极，所述电接触区域具有端部和连续侧部，并且所述端部和所述连续侧部一起形成开放空腔，其中所述存储单元 具有可以通过在第一电极和第二电极两端施加电压来切换的高电阻状态和低电阻状态。