摘要:
A stack of semiconductor layers (310) forms a re-emitting semiconductor construction (RSC). The stack (310) includes an active region (316) that converts light at a first wavelength to light at a second wavelength, the active region (316) including at least one potential well. The stack (310) also includes an inactive region (318) extending from an outer surface of the stack to the active region. Depressions (326) are formed in the stack (310) that extend from the outer surface into the inactive region (318). An average depression depth is at least 50% of a thickness of the inactive region. Alternatively, the average depression depth is at least 50% of a nearest potential well distance. Still other alternative characterizations of the depressions (326) are also disclosed. The depressions (326) may have at least a 40% packing density in plan view. The depressions (326) may also have a substantial portion of their projected surface area associated with obliquely inclined surfaces.
摘要:
A stack of semiconductor layers forms a re-emitting semiconductor construction (RSC). The stack includes an active region that converts light at a first wavelength to light at a second wavelength, the active region including at least one potential well. The stack also includes an inactive region extending from an outer surface of the stack to the active region. Depressions are formed in the stack that extend from the outer surface into the inactive region. An average depression depth is at least 50% of a thickness of the inactive region or at least 50% of a nearest potential well distance. The depressions may have at least a 40% packing density in plan view. The depressions may also have a substantial portion of their projected surface area associated with obliquely inclined surfaces.
摘要:
Re-emitting semiconductor constructions (RSCs) for use with LEDs, and related devices, systems, and methods are disclosed. A method of fabrication includes providing a semiconductor substrate, forming on a first side of the substrate a semiconductor layer stack, attaching a carrier window to the stack, and removing the substrate after the attaching step. The stack includes an active region adapted to convert light at a first wavelength λ1 to visible light at a second wavelength λ2, the active region including at least a first potential well. The attaching step is carried out such that the stack is disposed between the substrate and the carrier window, which is transparent to the second wavelength λ2. The carrier window may also have a lateral dimension greater than that of the stack. The removal step is carried out so as to provide an RSC carrier device that includes the carrier window and the stack.
摘要:
Re-emitting semiconductor constructions (RSCs) for use with LEDs, and related devices, systems, and methods are disclosed. A method of fabrication includes providing a semiconductor substrate, forming on a first side of the substrate a semiconductor layer stack, attaching a carrier window to the stack, and removing the substrate after the attaching step. The stack includes an active region adapted to convert light at a first wavelength λ1 to visible light at a second wavelength λ2, the active region including at least a first potential well. The attaching step is carried out such that the stack is disposed between the substrate and the carrier window, which is transparent to the second wavelength λ2. The carrier window may also have a lateral dimension greater than that of the stack. The removal step is carried out so as to provide an RSC carrier device that includes the carrier window and the stack.
摘要:
The disclosed embodiments relate to systems and methods for heating a slurry to increase a solids concentration of the slurry while maintaining the viscosity of the slurry below a threshold viscosity. For example, in one embodiment, a system includes a fuel slurry preparation system having a slurry tank configured to hold a fuel slurry, the fuel slurry having a solid fuel and a liquid. The fuel slurry preparation system also includes a heat source and a controller configured to control the heat source to heat the fuel slurry to decrease a viscosity of the slurry below a threshold viscosity.
摘要:
Extended area lighting devices, which are useful e.g. as luminaires, include a light guide and diffractive surface features on a major surface of the light guide. The diffractive surface features are tailored to extract guided-mode light from the light guide. The light guides can be combined with other components and features such as light source(s) to inject guided-mode light into the light guide, light source(s) to project light through the light guide as non-guided-mode light, a framework of interconnected support members (attached to multiple such light guides), and/or a patterned low index subsurface layer that selectively blocks some guided mode light from reaching the diffractive surface features, to provide unique and useful lighting devices. Related optical devices, and optical films having diffractive features that can be used to construct such devices and light guides, are also disclosed.
摘要:
Extended area lighting devices include a light guide and diffractive surface features on a major surface thereof. The diffractive surface features include diffractive features of different pitches in non-overlapping regions of the major surface tailored to extract guided-mode light of different colors from the light guide in different directions. The diffractive features extract light such that an ordinary user observes substantially different colors in different regions of the light guide, providing a colorful appearance. Notwithstanding this, the diffractive features also extract light such that the lighting device illuminates a reference surface, disposed at an intermediate distance from the light guide, with illumination light that is substantially uniform in color and substantially white. Optical films having diffractive features that can be used to construct such devices and light guides are also disclosed. The concept can also be extended to embodiments in which the uniform color illumination light is not substantially white.
摘要:
Extended area lighting devices include a light guide and diffractive surface features on a major surface of the light guide. The diffractive surface features provide low distortion for viewing objects through the light guide. Light from discrete light source(s) is injected into the light guide, and the diffractive surface features interact with the injected light to couple guided-mode light out of the light guide. The out-coupled light produces one or more bands whose apparent shape changes with viewing position. The bands may be bright bands that correspond to the discrete light sources, or dark bands associated with an optional non-uniform reflective structure extending along a side surface of the light guide. Multiple bands may form a pattern that changes with viewing position, the pattern of bands having a 3-dimensional appearance for at least some viewing positions. The lighting devices can be used as luminaires for general lighting or decorative lighting.
摘要:
The disclosed embodiments relate to systems and methods for heating a slurry to increase a solids concentration of the slurry while maintaining the viscosity of the slurry below a threshold viscosity. For example, in one embodiment, a system includes a fuel slurry preparation system having a slurry tank configured to hold a fuel slurry, the fuel slurry having a solid fuel and a liquid. The fuel slurry preparation system also includes a heat source and a controller configured to control the heat source to heat the fuel slurry to decrease a viscosity of the slurry below a threshold viscosity.
摘要:
Wherein the light source comprising: a monolithic emissive semiconductor device; and an array of lenslets, the lenslets being optically and mechanically coupled to the monolithic emissive semiconductor device; wherein the monolithic emissive semiconductor device comprises an array of localized light emission regions, each region corresponding to a given lenslet; wherein the lenslets have an apparent center of curvature (Ca), an apparent focal point (fa), a radius of curvature (R) and a lenslet base diameter (D), the base diameter being the width of the lenslet at the intersection with the monolithic emissive semiconductor device; wherein the distance along the lenslet optic axis between the Ca and the fa are normalized, such that Ca is located at distance 0 and fa is located at point 1; wherein each localized light emission region is located at a point that is greater than 0, and less than Formula (I); and wherein each light emission region has a diameter, the emission region diameter measuring one-third or less of a corresponding lenslet base diameter.