公开(公告)号：US08803271B2

公开(公告)日：2014-08-12

申请号：US13429114

申请日：2012-03-23

申请人： Zhe-Ju Liu ,  Chih-Cherng Jeng ,  Kuo-Cheng Lee ,  Szu-Hung Yang ,  Po-Zen Chen ,  Chi-Chin Hsu

发明人： Zhe-Ju Liu ,  Chih-Cherng Jeng ,  Kuo-Cheng Lee ,  Szu-Hung Yang ,  Po-Zen Chen ,  Chi-Chin Hsu

IPC分类号： H01L31/0232

CPC分类号： H01L27/14623 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14636 ,  H01L27/1464

摘要： A device includes a semiconductor substrate having a front side and a backside. A photo-sensitive device is disposed on the front side of the semiconductor substrate. A dielectric layer is disposed on the backside of the semiconductor substrate, wherein the dielectric layer is over a back surface of the semiconductor substrate. A metal shield is over the dielectric layer and overlapping the photo-sensitive device. A metal plug penetrates through the dielectric layer, wherein the metal plug electrically couples the metal shield to the semiconductor substrate.

摘要翻译： 一种器件包括具有正面和背面的半导体衬底。 光敏装置设置在半导体基板的正面上。 电介质层设置在半导体衬底的背面，其中电介质层在半导体衬底的背面之上。 金属屏蔽层在介电层上方并与光敏器件重叠。 金属插塞穿过电介质层，其中金属插头将金属屏蔽件电耦合到半导体衬底。

公开(公告)号：US08872301B2

公开(公告)日：2014-10-28

申请号：US13454924

申请日：2012-04-24

申请人： Chia-Yang Hung ,  Po-Zen Chen ,  Szu-Hung Yang ,  Chih-Cherng Jeng ,  Chih-Kang Chao ,  I-I Cheng

发明人： Chia-Yang Hung ,  Po-Zen Chen ,  Szu-Hung Yang ,  Chih-Cherng Jeng ,  Chih-Kang Chao ,  I-I Cheng

IPC分类号： H01L31/18 ,  H01L21/311 ,  H01L21/66 ,  H01L23/48 ,  H01L21/762 ,  H01L21/02 ,  H01L21/8238 ,  H01L21/76

CPC分类号： H01L21/76229 ,  H01L27/1463 ,  H01L27/14643

摘要： The presented principles describe an apparatus and method of making the same, the apparatus being a semiconductor circuit device, having shallow trench isolation features bounding an active area and a periphery area on a semiconductor substrate to electrically isolate structures in the active area from structures in the periphery area. The shallow trench isolation feature bounding the active area is shallower than the shallow trench isolation feature bounding the periphery area, with the periphery area shallow trench isolation structure being formed through two or more etching steps.

摘要翻译： 所呈现的原理描述了一种制造它的装置和方法，该装置是半导体电路装置，具有浅沟槽隔离特征，其界定半导体衬底上的有源区域和外围区域，以将活性区域中的结构与 周边地区。 围绕有源区域的浅沟槽隔离特征比围绕边缘区域的浅沟槽隔离特征浅，通过两个或更多个蚀刻步骤形成外围区域浅沟槽隔离结构。

公开(公告)号：US20130277790A1

公开(公告)日：2013-10-24

申请号：US13454924

申请日：2012-04-24

申请人： Chia-Yang Hung ,  Po-Zen Chen ,  Szu-Hung Yang ,  Chih-Cherng Jeng ,  Chih-Kang Chao ,  I-I Cheng

发明人： Chia-Yang Hung ,  Po-Zen Chen ,  Szu-Hung Yang ,  Chih-Cherng Jeng ,  Chih-Kang Chao ,  I-I Cheng

IPC分类号： H01L29/06 ,  H01L21/762

CPC分类号： H01L21/76229 ,  H01L27/1463 ,  H01L27/14643

摘要： The presented principles describe an apparatus and method of making the same, the apparatus being a semiconductor circuit device, having shallow trench isolation features bounding an active area and a periphery area on a semiconductor substrate to electrically isolate structures in the active area from structures in the periphery area. The shallow trench isolation feature bounding the active area is shallower than the shallow trench isolation feature bounding the periphery area, with the periphery area shallow trench isolation structure being formed through two or more etching steps.

摘要翻译： 所呈现的原理描述了一种制造它的装置和方法，该装置是半导体电路装置，具有浅沟槽隔离特征，其界定半导体衬底上的有源区域和外围区域，以将活性区域中的结构与 周边地区。 围绕有源区域的浅沟槽隔离特征比围绕边缘区域的浅沟槽隔离特征浅，通过两个或更多个蚀刻步骤形成外围区域浅沟槽隔离结构。

公开(公告)号：US08652868B2

公开(公告)日：2014-02-18

申请号：US13410165

申请日：2012-03-01

申请人： Yu-Shen Shih ,  Ching-Hwanq Su ,  Wei-Ming You ,  Chih-Cherng Jeng ,  Kuo-Cheng Lee ,  Yen-Hsung Ho

发明人： Yu-Shen Shih ,  Ching-Hwanq Su ,  Wei-Ming You ,  Chih-Cherng Jeng ,  Kuo-Cheng Lee ,  Yen-Hsung Ho

IPC分类号： H01L21/00

CPC分类号： H01L31/103 ,  H01L31/1804 ,  Y02E10/547

摘要： An implanting method for forming a photodiode comprises providing a substrate with a first conductivity, growing an epitaxial layer on the substrate, implanting ions with a second conductivity in the epitaxial layer from a front side of the substrate and implanting ions with the first conductivity in the epitaxial layer from the front side of the substrate to form a photo active region adjacent to the front side and a photo inactive region underneath the photo active region. By employing the implanting method, an average doping density of the photo active region is approximately ten times more than an average doping density of the photo inactive region.

摘要翻译： 用于形成光电二极管的注入方法包括提供具有第一导电性的衬底，在衬底上生长外延层，从衬底的前侧在外延层中注入具有第二导电性的离子，并将第一导电性的离子注入 从衬底的前侧形成外延层以形成与前侧相邻的光有源区和在光有源区下面的光无源区。 通过采用注入方法，光有源区的平均掺杂密度约为光无源区的平均掺杂密度的十倍。

公开(公告)号：US20130230941A1

公开(公告)日：2013-09-05

申请号：US13410165

申请日：2012-03-01

申请人： Yu-Shen Shih ,  Ching-Hwanq Su ,  Wei-Ming You ,  Chih-Cherng Jeng ,  Kuo-Cheng Lee ,  Yen-Hsung Ho

发明人： Yu-Shen Shih ,  Ching-Hwanq Su ,  Wei-Ming You ,  Chih-Cherng Jeng ,  Kuo-Cheng Lee ,  Yen-Hsung Ho

IPC分类号： H01L31/18

CPC分类号： H01L31/103 ,  H01L31/1804 ,  Y02E10/547

摘要： An implanting method for forming a photodiode comprises providing a substrate with a first conductivity, growing an epitaxial layer on the substrate, implanting ions with a second conductivity in the epitaxial layer from a front side of the substrate and implanting ions with the first conductivity in the epitaxial layer from the front side of the substrate to form a photo active region adjacent to the front side and a photo inactive region underneath the photo active region. By employing the implanting method, an average doping density of the photo active region is approximately ten times more than an average doping density of the photo inactive region.

摘要翻译： 用于形成光电二极管的注入方法包括提供具有第一导电性的衬底，在衬底上生长外延层，从衬底的前侧在外延层中注入具有第二导电性的离子，并将第一导电性的离子注入 从衬底的前侧形成外延层以形成与前侧相邻的光有源区和在光有源区下面的光无源区。 通过采用注入方法，光有源区的平均掺杂密度约为光无源区的平均掺杂密度的十倍。

公开(公告)号：US08860101B2

公开(公告)日：2014-10-14

申请号：US13406363

申请日：2012-02-27

申请人： Lan Fang Chang ,  Ching-Hwanq Su ,  Wei-Ming You ,  Chih-Cherng Jeng ,  Chih-Kang Chao ,  Fu-Sheng Guo

发明人： Lan Fang Chang ,  Ching-Hwanq Su ,  Wei-Ming You ,  Chih-Cherng Jeng ,  Chih-Kang Chao ,  Fu-Sheng Guo

IPC分类号： H01L31/062

CPC分类号： H01L31/103 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/1464 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

摘要： A system and method for reducing cross-talk between photosensitive diodes is provided. In an embodiment an isolation region comprising a first concentration of dopants is located between the photosensitive diodes. The photosensitive diodes have a second concentration of dopants that is less than the first concentration of dopants, which helps to prevent diffusion from the photosensitive diodes to form a potential path for undesired cross-talk between the photosensitive diodes.

摘要翻译： 提供了一种用于减少感光二极管之间串扰的系统和方法。 在一个实施方案中，包含第一浓度的掺杂剂的隔离区位于感光二极管之间。 感光二极管具有小于掺杂剂的第一浓度的掺杂剂的第二浓度，这有助于防止光敏二极管扩散以形成感光二极管之间不期望的串扰的电势路径。

公开(公告)号：US20130207220A1

公开(公告)日：2013-08-15

申请号：US13406363

申请日：2012-02-27

申请人： Lan Fang Chang ,  Ching-Hwanq Su ,  Wei-Ming You ,  Chih-Cherng Jeng ,  Chih-Kang Chao ,  Fu-Sheng Guo

发明人： Lan Fang Chang ,  Ching-Hwanq Su ,  Wei-Ming You ,  Chih-Cherng Jeng ,  Chih-Kang Chao ,  Fu-Sheng Guo

IPC分类号： H01L31/102 ,  H01L31/18

CPC分类号： H01L31/103 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/1464 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

摘要： A system and method for reducing cross-talk between photosensitive diodes is provided. In an embodiment an isolation region comprising a first concentration of dopants is located between the photosensitive diodes. The photosensitive diodes have a second concentration of dopants that is less than the first concentration of dopants, which helps to prevent diffusion from the photosensitive diodes to form a potential path for undesired cross-talk between the photosensitive diodes.

摘要翻译： 提供了一种用于减少感光二极管之间串扰的系统和方法。 在一个实施方案中，包含第一浓度的掺杂剂的隔离区位于感光二极管之间。 感光二极管具有小于掺杂剂的第一浓度的掺杂剂的第二浓度，这有助于防止光敏二极管扩散以形成感光二极管之间不期望的串扰的电势路径。

公开(公告)号：US08628998B2

公开(公告)日：2014-01-14

申请号：US13477897

申请日：2012-05-22

申请人： Yu-Ting Lin ,  Cheng-Jung Sung ,  Yu-Sheng Wang ,  Shiu-Ko JangJian ,  Wei-Ming You ,  Chih-Cherng Jeng ,  Ching-Hwanq Su

发明人： Yu-Ting Lin ,  Cheng-Jung Sung ,  Yu-Sheng Wang ,  Shiu-Ko JangJian ,  Wei-Ming You ,  Chih-Cherng Jeng ,  Ching-Hwanq Su

IPC分类号： H01L21/00

CPC分类号： H01L27/14687 ,  H01L21/268 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14689

摘要： A method includes performing a grinding on a backside of a semiconductor substrate. An image sensor is disposed on a front side of the semiconductor substrate. An impurity is doped into a surface layer of the backside of the semiconductor substrate to form a doped layer. A multi-cycle laser anneal is performed on the doped layer.

摘要翻译： 一种方法包括在半导体衬底的背面进行研磨。 图像传感器设置在半导体衬底的前侧。 杂质掺杂到半导体衬底的背面的表面层中以形成掺杂层。 在掺杂层上进行多周期激光退火。

公开(公告)号：US20130193539A1

公开(公告)日：2013-08-01

申请号：US13429002

申请日：2012-03-23

申请人： Jung-Chi Jeng ,  Chih-Cherng Jeng ,  Chih-Kang Chao ,  Ching-Hwanq Su ,  Yan-Hua Lin ,  Yu-Shen Shih

发明人： Jung-Chi Jeng ,  Chih-Cherng Jeng ,  Chih-Kang Chao ,  Ching-Hwanq Su ,  Yan-Hua Lin ,  Yu-Shen Shih

IPC分类号： H01L31/0232 ,  H01L31/18

CPC分类号： H01L31/1804 ,  H01L27/1461 ,  H01L27/1464 ,  H01L27/14689 ,  H01L31/103 ,  Y02E10/547

摘要： A backside illuminated CMOS image sensor comprises an extended photo active region formed over a substrate using a first high energy ion implantation process and an isolation region formed over the substrate using a second high energy ion implantation process. The extended photo active region is enclosed by the isolation region, which has a same depth as the extended photo active region. The extended photo active region helps to increase the number of photons converted into electrons so as to improve quantum efficiency.

摘要翻译： 背面照明CMOS图像传感器包括使用第一高能离子注入工艺在衬底上形成的延伸的光有源区，以及使用第二高能离子注入工艺在衬底上形成的隔离区。 扩展的光有源区被隔离区包围，该隔离区具有与扩展的光活性区相同的深度。 扩展的光有源区域有助于增加转换成电子的光子数量，以提高量子效率。

公开(公告)号：US08049213B2

公开(公告)日：2011-11-01

申请号：US11958942

申请日：2007-12-18

申请人： Ching-Chung Su ,  Yi-Wei Chiu ,  Tzu Chan Weng ,  Yih Song Chiu ,  Pin Chia Su ,  Chih-Cherng Jeng ,  Kuo-Hsiu Wei

发明人： Ching-Chung Su ,  Yi-Wei Chiu ,  Tzu Chan Weng ,  Yih Song Chiu ,  Pin Chia Su ,  Chih-Cherng Jeng ,  Kuo-Hsiu Wei

IPC分类号： H01L21/66 ,  H01L23/544

CPC分类号： H01L22/14 ,  H01L22/12 ,  H01L22/20

摘要： A method of measuring dimensional characteristics includes providing a substrate and forming a reflective layer over the substrate. A dielectric layer is then formed over the reflective layer. The dielectric layer includes a grating pattern and a resistivity test line inset in a transparent region. Radiation is then directed onto the dielectric layer so that some of the radiation is transmitted through the transparent region to the reflective layer. A radiation pattern is then detected from the radiation reflected and scattered by the metal grating pattern. The radiation pattern is analyzed to determine a first dimensional information. Then the resistance of the resistivity test line is measured, and that resistance is analyzed to determine a second dimensional information. The first and second dimensional informations are then compared.

摘要翻译： 测量尺寸特性的方法包括提供衬底并在衬底上形成反射层。 然后在反射层上形成电介质层。 电介质层包括在透明区域内插入的光栅图案和电阻率测试线。 然后将辐射引导到电介质层上，使得一些辐射透过透明区域到达反射层。 然后从由金属光栅图案反射和散射的辐射中检测出辐射图。 分析辐射图以确定第一维信息。 然后测量电阻率测试线的电阻，并分析该电阻以确定第二维信息。 然后比较第一和第二维信息。