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1.COMPOSITION AND METHOD FOR LOW TEMPERATURE DEPOSITION OF SILICON-CONTAINING FILMS 有权
标题翻译: 含硅薄膜低温沉积的组合物和方法公开(公告)号:US20100221914A1
公开(公告)日:2010-09-02
申请号:US12777519
申请日:2010-05-11
申请人: Ziyun Wang , Chongying Xu , Thomas H. Baum , Bryan Hendrix , Jeffrey F. Roeder
发明人: Ziyun Wang , Chongying Xu , Thomas H. Baum , Bryan Hendrix , Jeffrey F. Roeder
IPC分类号: H01L21/283 , C07F7/02 , C09D7/00
CPC分类号: H01L21/0217 , C07F7/025 , C07F7/10 , C07F7/12 , C23C16/308 , C23C16/345 , C23C16/402 , C30B25/02 , C30B29/06 , H01L21/02219 , H01L21/02271 , H01L21/3144 , H01L21/31612 , H01L21/3185
摘要: This invention relates to silicon precursor compositions for forming silicon-containing films by low temperature (e.g.,
摘要翻译: 本发明涉及通过用于制造ULSI器件和器件结构的低温(例如,<300℃)的化学气相沉积工艺形成含硅膜的硅前体组合物。 这种硅前体组合物包含至少一个完全被烷基氨基和/或二烷基氨基官能团取代的二烷基硅烷衍生物化合物。
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2.Composition and method for low temperature deposition of silicon-containing films 有权
标题翻译: 含硅薄膜低温沉积的组成和方法公开(公告)号:US07446217B2
公开(公告)日:2008-11-04
申请号:US10699079
申请日:2003-10-31
申请人: Ziyun Wang , Chongying Xu , Thomas H. Baum , Bryan Hendrix , Jeffrey F. Roeder
发明人: Ziyun Wang , Chongying Xu , Thomas H. Baum , Bryan Hendrix , Jeffrey F. Roeder
CPC分类号: H01L21/0217 , C07F7/025 , C07F7/10 , C07F7/12 , C23C16/308 , C23C16/345 , C23C16/402 , C30B25/02 , C30B29/06 , H01L21/02219 , H01L21/02271 , H01L21/3144 , H01L21/31612 , H01L21/3185
摘要: This invention relates to silicon precursor compositions for forming silicon-containing films by low temperature (e.g.,
摘要翻译: 本发明涉及通过用于制造ULSI器件和器件结构的低温(例如,<300℃)的化学气相沉积工艺形成含硅膜的硅前体组合物。 这种硅前体组合物包含至少一个完全被烷基氨基和/或二烷基氨基官能团取代的二烷基硅烷衍生物化合物。
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3.COMPOSITION AND METHOD FOR LOW TEMPERATURE DEPOSITION OF SILICON-CONTAINING FILMS 有权
标题翻译: 含硅薄膜低温沉积的组合物和方法公开(公告)号:US20110136343A1
公开(公告)日:2011-06-09
申请号:US13028193
申请日:2011-02-15
申请人: Ziyun Wang , Chongying Xu , Thomas H. Baum , Bryan Hendrix , Jeffrey F. Roeder
发明人: Ziyun Wang , Chongying Xu , Thomas H. Baum , Bryan Hendrix , Jeffrey F. Roeder
IPC分类号: H01L21/283 , C07F7/02
CPC分类号: H01L21/0217 , C07F7/025 , C07F7/10 , C07F7/12 , C23C16/308 , C23C16/345 , C23C16/402 , C30B25/02 , C30B29/06 , H01L21/02219 , H01L21/02271 , H01L21/3144 , H01L21/31612 , H01L21/3185
摘要: This invention relates to silicon precursor compositions for forming silicon-containing films by low temperature (e.g.,
摘要翻译: 本发明涉及用于制造ULSI器件和器件结构的低温(例如<300℃)化学气相沉积工艺形成含硅膜的硅前体组合物。 这种硅前体组合物包含至少一个完全被烷基氨基和/或二烷基氨基官能团取代的二烷基硅烷衍生物化合物。
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4.COMPOSITION AND METHOD FOR LOW TEMPERATURE DEPOSITION OF SILICON-CONTAINING FILMS 有权
标题翻译: 含硅薄膜低温沉积的组合物和方法公开(公告)号:US20090084288A1
公开(公告)日:2009-04-02
申请号:US12247120
申请日:2008-10-07
申请人: Ziyun Wang , Chongying Xu , Thomas H. Baum , Bryan Hendrix , Jeffrey F. Roeder
发明人: Ziyun Wang , Chongying Xu , Thomas H. Baum , Bryan Hendrix , Jeffrey F. Roeder
CPC分类号: H01L21/0217 , C07F7/025 , C07F7/10 , C07F7/12 , C23C16/308 , C23C16/345 , C23C16/402 , C30B25/02 , C30B29/06 , H01L21/02219 , H01L21/02271 , H01L21/3144 , H01L21/31612 , H01L21/3185
摘要: This invention relates to silicon precursor compositions for forming silicon-containing films by low temperature (e.g.,
摘要翻译: 本发明涉及通过用于制造ULSI器件和器件结构的低温(例如,<300℃)的化学气相沉积工艺形成含硅膜的硅前体组合物。 这种硅前体组合物包含至少一个完全被烷基氨基和/或二烷基氨基官能团取代的二烷基硅烷衍生物化合物。
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5.Composition and method for low temperature chemical vapor deposition of silicon-containing films including silicon carbonitride and silicon oxycarbonitride films 有权
标题翻译: 包含碳氮化硅和碳氮氧化硅薄膜的含硅膜的低温化学气相沉积的组成和方法公开(公告)号:US08802882B2
公开(公告)日:2014-08-12
申请号:US12862739
申请日:2010-08-24
申请人: Ziyun Wang , Chongying Xu , Bryan C. Hendrix , Jeffrey F. Roeder , Tianniu Chen , Thomas H. Baum
发明人: Ziyun Wang , Chongying Xu , Bryan C. Hendrix , Jeffrey F. Roeder , Tianniu Chen , Thomas H. Baum
IPC分类号: C07F7/10
CPC分类号: C07F7/10 , H01L21/02271
摘要: Silicon precursors for forming silicon-containing films in the manufacture of semiconductor devices, such as films including silicon carbonitride, silicon oxycarbonitride, and silicon nitride (Si3N4), and a method of depositing the silicon precursors on substrates using low temperature (e.g.,
摘要翻译: 在制造半导体器件(例如包括碳氮化硅,碳氮化硅和氮化硅(Si 3 N 4)的薄膜)的制造中的硅前体,以及使用低温(例如,550℃)将硅前体沉积在衬底上的方法 ℃)化学气相沉积工艺,用于制造ULSI器件和器件结构。
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6.Composition and method for low temperature deposition of silicon-containing films 有权
标题翻译: 含硅薄膜低温沉积的组成和方法公开(公告)号:US07887883B2
公开(公告)日:2011-02-15
申请号:US12777519
申请日:2010-05-11
CPC分类号: H01L21/0217 , C07F7/025 , C07F7/10 , C07F7/12 , C23C16/308 , C23C16/345 , C23C16/402 , C30B25/02 , C30B29/06 , H01L21/02219 , H01L21/02271 , H01L21/3144 , H01L21/31612 , H01L21/3185
摘要: This invention relates to silicon precursor compositions for forming silicon-containing films by low temperature (e.g.,
摘要翻译: 本发明涉及通过用于制造ULSI器件和器件结构的低温(例如,<300℃)的化学气相沉积工艺形成含硅膜的硅前体组合物。 这种硅前体组合物包含至少一个完全被烷基氨基和/或二烷基氨基官能团取代的二烷基硅烷衍生物化合物。
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7.Composition and method for low temperature deposition of silicon-containing films such as films including silicon, silicon nitride, silicon dioxide and/or silicon-oxynitride 有权
标题翻译: 含硅膜,例如硅,氮化硅,二氧化硅和/或硅氧氮化物的薄膜的低温沉积的组成和方法公开(公告)号:US07786320B2
公开(公告)日:2010-08-31
申请号:US12464726
申请日:2009-05-12
申请人: Ziyun Wang , Chongying Xu , Ravi K. Laxman , Thomas H. Baum , Bryan C. Hendrix , Jeffrey F. Roeder
发明人: Ziyun Wang , Chongying Xu , Ravi K. Laxman , Thomas H. Baum , Bryan C. Hendrix , Jeffrey F. Roeder
IPC分类号: C07F7/02
CPC分类号: H01L21/0217 , C07F7/025 , C07F7/10 , C07F7/12 , C23C16/308 , C23C16/345 , C23C16/402 , C30B25/02 , C30B29/06 , H01L21/02219 , H01L21/02222 , H01L21/02271 , H01L21/0228 , H01L21/3144 , H01L21/31612 , H01L21/3185
摘要: Silicon precursors for forming silicon-containing films in the manufacture of semiconductor devices, such as low dielectric constant (k) thin films, high k gate silicates, low temperature silicon epitaxial films, and films containing silicon nitride (Si3N4), siliconoxynitride (SiOxNy) and/or silicon dioxide (SiO2). The precursors of the invention are amenable to use in low temperature (e.g.,
摘要翻译: 半导体器件如低介电常数(k)薄膜,高k栅极硅酸盐,低温硅外延膜和含有氮化硅(Si 3 N 4),硅氧氮化物(SiO x N y)的膜的制造中的含硅膜的硅前体, 和/或二氧化硅(SiO 2)。 本发明的前体适于在低温(例如,<500℃)的化学气相沉积工艺中使用,用于制造ULSI器件和器件结构。
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8.Composition and method for low temperature chemical vapor deposition of silicon-containing films including silicon carbonitride and silicon oxycarbonitride films 有权
标题翻译: 包含碳氮化硅和碳氮氧化硅薄膜的含硅膜的低温化学气相沉积的组成和方法公开(公告)号:US07781605B2
公开(公告)日:2010-08-24
申请号:US12578262
申请日:2009-10-13
申请人: Ziyun Wang , Chongying Xu , Bryan C. Hendrix , Jeffrey F. Roeder , Tianniu Chen , Thomas H. Baum
发明人: Ziyun Wang , Chongying Xu , Bryan C. Hendrix , Jeffrey F. Roeder , Tianniu Chen , Thomas H. Baum
IPC分类号: C07F7/10
CPC分类号: C07F7/10 , H01L21/02271
摘要: Silicon precursors for forming silicon-containing films in the manufacture of semiconductor devices, such as films including silicon carbonitride, silicon oxycarbonitride, and silicon nitride (Si3N4), and a method of depositing the silicon precursors on substrates using low temperature (e.g.,
摘要翻译: 在制造半导体器件(例如包括碳氮化硅,碳氮化硅和氮化硅(Si 3 N 4)的薄膜)的制造中的硅前体,以及使用低温(例如,550℃)将硅前体沉积在衬底上的方法 ℃)化学气相沉积工艺,用于制造ULSI器件和器件结构。
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9.Composition and method for low temperature deposition of silicon-containing films such as films including silicon, silicon nitride, silicon dioxide and/or silicon-oxynitride 有权
标题翻译: 含硅膜,例如硅,氮化硅,二氧化硅和/或硅氧氮化物的薄膜的低温沉积的组成和方法公开(公告)号:US08153833B2
公开(公告)日:2012-04-10
申请号:US13069217
申请日:2011-03-22
申请人: Ziyun Wang , Chongying Xu , Ravi K. Laxman , Thomas H. Baum , Bryan C. Hendrix , Jeffrey F. Roeder
发明人: Ziyun Wang , Chongying Xu , Ravi K. Laxman , Thomas H. Baum , Bryan C. Hendrix , Jeffrey F. Roeder
IPC分类号: C07C7/10
CPC分类号: H01L21/0217 , C07F7/025 , C07F7/10 , C07F7/12 , C23C16/308 , C23C16/345 , C23C16/402 , C30B25/02 , C30B29/06 , H01L21/02219 , H01L21/02222 , H01L21/02271 , H01L21/0228 , H01L21/3144 , H01L21/31612 , H01L21/3185
摘要: Silicon precursors for forming silicon-containing films in the manufacture of semiconductor devices, such as low dielectric constant (k) thin films, high k gate silicates, low temperature silicon epitaxial films, and films containing silicon nitride (Si3N4), siliconoxynitride (SiOxNy) and/or silicon dioxide (SiO2). The precursors of the invention are amenable to use in low temperature (e.g.,
摘要翻译: 半导体器件如低介电常数(k)薄膜,高k栅极硅酸盐,低温硅外延膜和含有氮化硅(Si 3 N 4),硅氧氮化物(SiO x N y)的膜的制造中的含硅膜的硅前体, 和/或二氧化硅(SiO 2)。 本发明的前体适于在低温(例如,<500℃)的化学气相沉积工艺中使用,用于制造ULSI器件和器件结构。
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10.Composition and method for low temperature deposition of silicon-containing films 有权
标题翻译: 含硅薄膜低温沉积的组成和方法公开(公告)号:US08236097B2
公开(公告)日:2012-08-07
申请号:US13028193
申请日:2011-02-15
CPC分类号: H01L21/0217 , C07F7/025 , C07F7/10 , C07F7/12 , C23C16/308 , C23C16/345 , C23C16/402 , C30B25/02 , C30B29/06 , H01L21/02219 , H01L21/02271 , H01L21/3144 , H01L21/31612 , H01L21/3185
摘要: This invention relates to silicon precursor compositions for forming silicon-containing films by low temperature (e.g.,
摘要翻译: 本发明涉及通过用于制造ULSI器件和器件结构的低温(例如,<300℃)的化学气相沉积工艺形成含硅膜的硅前体组合物。 这种硅前体组合物包含至少一个完全被烷基氨基和/或二烷基氨基官能团取代的二烷基硅烷衍生物化合物。
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