公开(公告)号：US20070001174A1

公开(公告)日：2007-01-04

申请号：US11169378

申请日：2005-06-29

申请人： Zoltan Ring ,  Helmut Hagleitner ,  Jason Henning ,  Andrew Mackenzie ,  Scott Allen ,  Scott Sheppard ,  Richard Smith ,  Saptharishi Sriram ,  Allan Ward

发明人： Zoltan Ring ,  Helmut Hagleitner ,  Jason Henning ,  Andrew Mackenzie ,  Scott Allen ,  Scott Sheppard ,  Richard Smith ,  Saptharishi Sriram ,  Allan Ward

IPC分类号： H01L29/15 ,  H01L31/0256

CPC分类号： H01L21/045 ,  H01L21/3145 ,  H01L21/318 ,  H01L21/3185 ,  H01L29/1608 ,  H01L29/2003 ,  H01L29/24

摘要： A passivated semiconductor structure and associated method are disclosed. The structure includes a silicon carbide substrate or layer; an oxidation layer on the silicon carbide substrate for lowering the interface density between the silicon carbide substrate and the thermal oxidation layer; a first sputtered non-stoichiometric silicon nitride layer on the thermal oxidation layer for reducing parasitic capacitance and minimizing device trapping; a second sputtered non-stoichiometric silicon nitride layer on the first layer for positioning subsequent passivation layers further from the substrate without encapsulating the structure; a sputtered stoichiometric silicon nitride layer on the second sputtered layer for encapsulating the structure and for enhancing the hydrogen barrier properties of the passivation layers; and a chemical vapor deposited environmental barrier layer of stoichiometric silicon nitride for step coverage and crack prevention on the encapsulant layer.

摘要翻译： 公开了钝化的半导体结构和相关方法。 该结构包括碳化硅衬底或层; 在碳化硅衬底上的氧化层，用于降低碳化硅衬底和热氧化层之间的界面密度; 在热氧化层上的第一溅射的非化学计量的氮化硅层，用于减少寄生电容并最小化器件捕获; 在所述第一层上的第二溅射的非化学计量的氮化硅层，用于使所述衬底进一步从所述衬底定位以后的钝化层而不封装所述结构; 在第二溅射层上溅射化学计量的氮化硅层，用于封装该结构并增强钝化层的氢阻挡性能; 以及化学气相沉积的化学计量氮化硅的环境阻挡层，用于在封装层上进行步骤覆盖和防裂。

公开(公告)号：US20060006393A1

公开(公告)日：2006-01-12

申请号：US10884930

申请日：2004-07-06

申请人： Allan Ward ,  Jason Henning ,  Helmut Hagleitner ,  Keith Wieber

发明人： Allan Ward ,  Jason Henning ,  Helmut Hagleitner ,  Keith Wieber

IPC分类号： H01L29/15

CPC分类号： H01L29/1608 ,  H01L21/0455 ,  H01L21/0485 ,  H01L29/45 ,  Y10S438/931

摘要： A method of producing an ohmic contact and a resulting ohmic contact structure are disclosed. The method includes the steps of forming a deposited film of nickel and silicon on a silicon carbide surface at a temperature below which either element will react with silicon carbide and in respective proportions so that the atomic fraction of silicon in the deposited film is greater than the atomic fraction of nickel, and heating the deposited film of nickel and silicon to a temperature at which nickel-silicon compounds will form with an atomic fraction of silicon greater than the atomic fraction of nickel but below the temperature at which either element will react with silicon carbide. The method can further include the step of annealing the nickel-silicon compound to a temperature higher than the heating temperature for the deposited film, and within a region of the phase diagram at which free carbon does not exist.

摘要翻译： 公开了一种制造欧姆接触和产生的欧姆接触结构的方法。 该方法包括以下步骤：在碳化硅表面上形成沉积的镍和硅的膜，其温度低于任何一种元素将与碳化硅反应并以相应的比例使沉积膜中硅的原子比分数大于 将镍和硅的原子分数加热至镍 - 硅化合物形成的温度，其中硅的原子分数大于镍的原子分数，但低于任一元素将与硅反应的温度 碳化物。 该方法还可以包括将镍硅化合物退火至高于沉积膜的加热温度的温度，并且在不存在游离碳的相图的区域内。

公开(公告)号：US20070001176A1

公开(公告)日：2007-01-04

申请号：US11328550

申请日：2006-01-10

申请人： Allan Ward ,  Jason Henning

发明人： Allan Ward ,  Jason Henning

IPC分类号： H01L31/0312

CPC分类号： H01L21/0217 ,  H01L21/02271 ,  H01L21/045 ,  H01L21/3145 ,  H01L21/318 ,  H01L21/3185 ,  H01L29/1608 ,  H01L29/2003 ,  H01L29/24 ,  H01L29/405 ,  H01L29/6606 ,  H01L29/732 ,  H01L29/74 ,  H01L29/78 ,  H01L29/868 ,  H01L29/872

摘要： An improved termination structure for high field semiconductor devices in silicon carbide is disclosed. The termination structure includes a silicon carbide-based device for high-field operation, an active region in the device, an edge termination passivation for the active region, in which the edge termination passivation includes, an oxide layer on at least some of the silicon carbide portions of the device for satisfying surface states and lowering interface density, a non-stoichiometric layer of silicon nitride on the oxide layer for avoiding the incorporation of hydrogen and for reducing parasitic capacitance and minimizing trapping, and, a stoichiometric layer of silicon nitride on the nonstoichiometric layer for encapsulating the nonstoichiometric layer and the oxide layer.

摘要翻译： 公开了一种用于碳化硅中的高场半导体器件的改进的端接结构。 端接结构包括用于高场操作的基于碳化硅的器件，器件中的有源区，用于有源区的边缘终止钝化，其中边缘终端钝化包括在至少一些硅上的氧化物层 用于满足表面状态和降低界面密度的器件的碳化物部分，在氧化物层上的非化学计量的氮化硅层，用于避免引入氢并减少寄生电容并最小化陷阱，以及化学计量的氮化硅层 用于封装非化学计量层和氧化物层的非化学计量层。

公开(公告)号：US09024327B2

公开(公告)日：2015-05-05

申请号：US11956366

申请日：2007-12-14

申请人： Allan Ward ,  Jason Henning

发明人： Allan Ward ,  Jason Henning

IPC分类号： H01L29/16 ,  H01L23/482 ,  H01L23/00 ,  H01L29/20 ,  H01L29/24 ,  H01L29/47 ,  H01L29/778 ,  H01L29/812 ,  H01L23/31 ,  H01L29/267 ,  H01L29/417

CPC分类号： H01L29/1608 ,  H01L23/3171 ,  H01L23/4827 ,  H01L24/05 ,  H01L29/2003 ,  H01L29/24 ,  H01L29/267 ,  H01L29/41766 ,  H01L29/475 ,  H01L29/7783 ,  H01L29/8128 ,  H01L2224/04026 ,  H01L2224/05 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01047 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/10272 ,  H01L2924/10329 ,  H01L2924/1033 ,  H01L2924/12032 ,  H01L2924/12036 ,  H01L2924/1306 ,  H01L2924/13063 ,  H01L2924/13064 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/1423 ,  H01L2924/19041 ,  H01L2924/351 ,  H01L2924/00

摘要： A semiconductor device structure is disclosed that includes a wide-bandgap semiconductor portion selected from the group consisting of silicon carbide and the Group III nitrides. An interconnect structure is made to the semiconductor portion, and the interconnect structure includes at least two diffusion barrier layers alternating with two respective high electrical conductivity layers. The diffusion barrier layers have a coefficient of thermal expansion different from and lower than the coefficient of thermal expansion of the high electrical conductivity layers. The difference in the respective coefficients of thermal expansions are large enough to constrain the expansion of the high conductivity layers but less than a difference that would create a strain between adjacent layers that would exceed the bond strength between the layers.

摘要翻译： 公开了一种半导体器件结构，其包括从由碳化硅和III族氮化物组成的组中选择的宽带隙半导体部分。 对半导体部分进行互连结构，并且互连结构包括与两个相应的高导电性层交替的至少两个扩散阻挡层。 扩散阻挡层的热膨胀系数不同于和低于高导电层的热膨胀系数。 相应的热膨胀系数的差异足够大以限制高电导率层的膨胀，但是小于将在相邻层之间产生超过层之间的结合强度的应变的差异。

公开(公告)号：US20130134433A1

公开(公告)日：2013-05-30

申请号：US11956366

申请日：2007-12-14

申请人： Allan Ward ,  Jason Henning

发明人： Allan Ward ,  Jason Henning

IPC分类号： H01L29/16 ,  H01L29/20

CPC分类号： H01L29/1608 ,  H01L23/3171 ,  H01L23/4827 ,  H01L24/05 ,  H01L29/2003 ,  H01L29/24 ,  H01L29/267 ,  H01L29/41766 ,  H01L29/475 ,  H01L29/7783 ,  H01L29/8128 ,  H01L2224/04026 ,  H01L2224/05 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01047 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/10272 ,  H01L2924/10329 ,  H01L2924/1033 ,  H01L2924/12032 ,  H01L2924/12036 ,  H01L2924/1306 ,  H01L2924/13063 ,  H01L2924/13064 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/1423 ,  H01L2924/19041 ,  H01L2924/351 ,  H01L2924/00

摘要： A semiconductor device structure is disclosed that includes a wide-bandgap semiconductor portion selected from the group consisting of silicon carbide and the Group III nitrides. An interconnect structure is made to the semiconductor portion, and the interconnect structure includes at least two diffusion barrier layers alternating with two respective high electrical conductivity layers. The diffusion barrier layers have a coefficient of thermal expansion different from and lower than the coefficient of thermal expansion of the high electrical conductivity layers. The difference in the respective coefficients of thermal expansions are large enough to constrain the expansion of the high conductivity layers but less than a difference that would create a strain between adjacent layers that would exceed the bond strength between the layers.

公开(公告)号：US20070018272A1

公开(公告)日：2007-01-25

申请号：US11462016

申请日：2006-08-02

申请人： Jason Henning ,  Allan Ward

发明人： Jason Henning ,  Allan Ward

IPC分类号： H01L29/47

CPC分类号： H01L21/0217 ,  H01L21/02271 ,  H01L21/045 ,  H01L21/3145 ,  H01L21/318 ,  H01L21/3185 ,  H01L29/1608 ,  H01L29/2003 ,  H01L29/24 ,  H01L29/405 ,  H01L29/6606 ,  H01L29/732 ,  H01L29/74 ,  H01L29/78 ,  H01L29/868 ,  H01L29/872

摘要： A semiconductor device is disclosed that includes a contact and an adjacent film on the surface of an underlying doped semiconductor material. The film has sufficient fixed charge to create an inversion layer adjacent the surface of the doped semiconductor material that under depletion conditions at least balances the number of surface states at the doping concentration of the underlying semiconductor material.

摘要翻译： 公开了一种半导体器件，其包括在下掺杂的半导体材料的表面上的接触和相邻的膜。 该膜具有足够的固定电荷以在耗尽条件下产生邻近掺杂半导体材料的表面的反型层，至少平衡下面的半导体材料的掺杂浓度下的表面状态数量。

公开(公告)号：US20070292999A1

公开(公告)日：2007-12-20

申请号：US11735799

申请日：2007-04-16

申请人： Jason Henning ,  Allan Ward ,  Alexander Suvorov

发明人： Jason Henning ,  Allan Ward ,  Alexander Suvorov

IPC分类号： H01L21/338 ,  H01L31/112

CPC分类号： H01L29/8128 ,  H01L29/1025 ,  H01L29/1608 ,  H01L29/2003 ,  H01L29/66848 ,  Y10T428/24612

摘要： A MESFET includes a silicon carbide layer, spaced apart source and drain regions in the silicon carbide layer, a channel region positioned within the silicon carbide layer between the source and drain regions and doped with implanted dopants, and a gate contact on the silicon carbide layer. Methods of forming a MESFET include providing a layer of silicon carbide, forming spaced apart source and drain regions in the silicon carbide layer, implanting impurity atoms to form a channel region between the source and drain regions, annealing the implanted impurity atoms, and forming a gate contact on the silicon carbide layer.

摘要翻译： MESFET包括碳化硅层，碳化硅层中的间隔开的源极和漏极区域，位于源极和漏极区域之间的碳化硅层内并掺杂有注入的掺杂剂的沟道区域，以及碳化硅层上的栅极接触 。 形成MESFET的方法包括提供碳化硅层，在碳化硅层中形成间隔开的源极和漏极区域，注入杂质原子以在源极和漏极区域之间形成沟道区域，退火注入的杂质原子，并形成 栅极接触在碳化硅层上。

公开(公告)号：US09515135B2

公开(公告)日：2016-12-06

申请号：US11331325

申请日：2006-01-12

申请人： Sei-Hyung Ryu ,  Anant K. Agarwal ,  Allan Ward

发明人： Sei-Hyung Ryu ,  Anant K. Agarwal ,  Allan Ward

IPC分类号： H01L31/0312 ,  H01L29/06 ,  H01L21/04 ,  H01L23/31 ,  H01L29/66 ,  H01L29/872 ,  H01L29/16

CPC分类号： H01L29/0619 ,  H01L21/0445 ,  H01L23/3192 ,  H01L29/0615 ,  H01L29/063 ,  H01L29/1608 ,  H01L29/6606 ,  H01L29/66068 ,  H01L29/872 ,  H01L2924/0002 ,  H01L2924/12044 ,  H01L2924/00

摘要： An edge termination structure for a silicon carbide semiconductor device includes a plurality of spaced apart concentric floating guard rings in a silicon carbide layer that at least partially surround a silicon carbide-based junction, an insulating layer on the floating guard rings, and a silicon carbide surface charge compensation region between the floating guard rings and adjacent the surface of the silicon carbide layer. A silicon nitride layer is on the silicon carbide layer, and an organic protective layer is on the silicon nitride layer. An oxide layer may be between the silicon nitride layer and the surface of the silicon carbide layer. Methods of forming edge termination structures are also disclosed.

摘要翻译： 用于碳化硅半导体器件的边缘终端结构包括在碳化硅层中的至少部分地围绕碳化硅基结的多个间隔开的同心浮动保护环，浮动保护环上的绝缘层和碳化硅 浮动保护环之间的表面电荷补偿区域与碳化硅层表面相邻。 氮化硅层位于碳化硅层上，有机保护层位于氮化硅层上。 氧化物层可以在氮化硅层和碳化硅层的表面之间。 还公开了形成边缘端接结构的方法。

公开(公告)号：US07880172B2

公开(公告)日：2011-02-01

申请号：US11700268

申请日：2007-01-31

申请人： Jason P. Henning ,  Allan Ward ,  Alexander Suvorov

发明人： Jason P. Henning ,  Allan Ward ,  Alexander Suvorov

IPC分类号： H01L29/15

CPC分类号： H01L29/8128 ,  H01L29/0607 ,  H01L29/1029 ,  H01L29/1608 ,  H01L29/45 ,  H01L29/47

摘要： A unit cell of a metal-semiconductor field-effect transistor (MESFET) includes a semi-insulating substrate having a surface, an implanted n-type channel region in the substrate, and implanted source and drain regions extending from the surface of the substrate into the implanted channel region. A gate contact is between the source and the drain regions, and an implanted p-type region is beneath the source region. The implanted p-type region has an end that extends towards the drain region, is spaced apart vertically from the implanted channel layer, and is electrically coupled to the source region. Methods of forming transistors including implanted channels and implanted p-type regions beneath the source region are also disclosed.

摘要翻译： 金属半导体场效应晶体管（MESFET）的单位电池包括具有表面的半绝缘基板，衬底中注入的n型沟道区，以及从衬底的表面延伸的注入源极和漏极区域 植入通道区域。 源极和漏极区之间的栅极接触，并且植入的p型区域在源极区域下方。 植入的p型区域具有朝着漏极区延伸的端部，与注入沟道层垂直间隔开，并且电耦合到源极区域。 还公开了在源极区域下方形成包括注入沟道和注入的p型区域的晶体管的方法。

公开(公告)号：US20100289109A1

公开(公告)日：2010-11-18

申请号：US12465279

申请日：2009-05-13

申请人： Jason Patrick Henning ,  Allan Ward

发明人： Jason Patrick Henning ,  Allan Ward

IPC分类号： H01L29/872 ,  H01L21/329 ,  H01L21/283

CPC分类号： H01L21/0495 ,  H01L29/1608 ,  H01L29/47 ,  H01L29/872

摘要： Fabrication of a Schottky diodes may include providing a Schottky contact layer containing a low barrier metal layer with spaced apart high barrier metal islands therein on a first surface of a substrate. A diode contact is formed on a second surface of the substrate that is opposite to the first surface. Formation of the Schottky contact layer may include providing a liquid mixture of a high barrier metal and a low barrier metal on the first surface of the substrate. Temperature and/or relative concentrations of the high and low barrier metals in the liquid mixture may be controlled to cause regions of the high barrier metal to solidify within the liquid mixture and agglomerate to form the spaced apart high barrier metal islands while inhibiting solidification of the low barrier metal. The temperature and relative concentrations may then be controlled to cause the low barrier metal to solidify and form the low barrier metal layer containing the high barrier metal islands.

摘要翻译： 肖特基二极管的制造可以包括在衬底的第一表面上提供包含低阻挡金属层的肖特基接触层，其间具有间隔开的高阻挡金属岛。 在基板的与第一表面相对的第二表面上形成二极管接触。 肖特基接触层的形成可以包括在衬底的第一表面上提供高阻挡金属和低阻挡金属的液体混合物。 可以控制液体混合物中高阻隔金属和低阻挡金属的温度和/或相对浓度，以使高阻隔金属的区域在液体混合物内凝固并附聚，形成间隔开的高阻隔金属岛，同时抑制 低阻隔金属。 然后可以控制温度和相对浓度以使低阻挡金属固化并形成含有高阻隔金属岛的低阻挡金属层。