-
1.发明授权III-nitride light-emitting devices with one or more resonance reflectors and reflective engineered growth templates for such devices, and methods 有权具有一个或多个共振反射器的III族氮化物发光器件和用于这种器件的反射工程生长模板以及方法公开(公告)号：US07915624B2
公开(公告)日：2011-03-29
申请号：US11882730
申请日：2007-08-03
Applicant: Robbie J. Jorgenson
Inventor： Robbie J. Jorgenson
IPC: H01L29/22
CPC classification number: H01L33/105 , H01L33/32 , H01L33/405 , H01L33/465 , H01L33/60
Abstract: A light emitter includes a first mirror that is an epitaxially grown metal mirror, a second mirror, and an active region that is epitaxially grown such that the active region is positioned at or close to, at least, one antinode between the first mirror and the second mirror.
Abstract translation: 光发射器包括外延生长的金属反射镜，第二反射镜和外延生长的有源区的第一反射镜，使得有源区位于或靠近第一反射镜和第二反射镜之间的至少一个波腹 第二镜。
-
2.发明申请III-NITRIDE LIGHT-EMITTING DEVICES WITH REFLECTIVE ENGINEERED GROWTH TEMPLATES AND METHODS OF MANUFACTURE 有权具有反射工程生长模式的III-NITRIDE发光装置及其制造方法公开(公告)号：US20120001213A1
公开(公告)日：2012-01-05
申请号：US13075104
申请日：2011-03-29
Applicant: Robbie J. Jorgenson
Inventor： Robbie J. Jorgenson
CPC classification number: H01L33/105 , H01L33/32 , H01L33/405 , H01L33/465 , H01L33/60
Abstract: A light emitter includes a first mirror that is an epitaxially grown metal mirror, a second mirror, and an active region that is epitaxially grown such that the active region is positioned at or close to, at least, one antinode between the first mirror and the second mirror.
Abstract translation: 光发射器包括外延生长的金属反射镜，第二反射镜和外延生长的有源区的第一反射镜，使得有源区位于或靠近第一反射镜和第二反射镜之间的至少一个波腹 第二镜。
-
公开(公告)号：US20110244609A1
公开(公告)日：2011-10-06
申请号：US12956640
申请日：2010-11-30
Applicant: Robbie J. Jorgenson , David J. King
Inventor： Robbie J. Jorgenson , David J. King
CPC classification number: H01L33/105 , H01L33/04 , H01L33/06 , H01L33/405 , Y10T29/5313
Abstract: An apparatus and method for making same. Some embodiments include a light-emitting device having a light-emitting active region; a tunneling-barrier (TB) structure facing adjacent the active region; a TB grown-epitaxial-metal-mirror (TB-GEMM) structure facing adjacent the TB structure, wherein the TB-GEMM structure includes at least one metal is substantially lattice matched to the active region; and a conductivity-type III-nitride crystal structure adjacent facing the active region opposite the TB structure. In some embodiments, the active region includes an MQW structure. In some embodiments, the TB-GEMM includes an alloy composition such that metal current injectors have a Fermi energy potential substantially equal to the sub-band minimum energy potential of the MQW. Some embodiments further include a second mirror (optionally a GEMM) to form an optical cavity between the second mirror and the TB-GEMM structure. In some embodiments, at least one of the GEMM is deposited on, and lattice matched to, a substrate.
Abstract translation: 一种用于制造它的装置和方法。 一些实施例包括具有发光有源区的发光器件; 面向邻近有源区的隧道势垒（TB）结构; 面向TB结构的TB生长外延金属镜（TB-GEMM）结构，其中TB-GEMM结构包括至少一种金属与活性区基本上晶格匹配; 以及与TB结构相对的有源区域相邻的导电型III族氮化物晶体结构。 在一些实施例中，活动区域包括MQW结构。 在一些实施方案中，TB-GEMM包括合金组合物，使得金属电流注入器具有基本上等于MQW的子带最小能量势的费米能量势。 一些实施例还包括在第二反射镜和TB-GEMM结构之间形成光腔的第二反射镜（可选地为GEMM）。 在一些实施例中，GEMM中的至少一个沉积在衬底上，并且与衬底晶格匹配。
-
公开(公告)号：US20090212278A1
公开(公告)日：2009-08-27
申请号：US12393029
申请日：2009-02-25
Applicant: Robbie J. Jorgenson , David J. King
Inventor： Robbie J. Jorgenson , David J. King
CPC classification number: H01L33/105 , H01L33/04 , H01L33/06 , H01L33/405 , Y10T29/5313
Abstract: An apparatus and method for making it. Some embodiments include a light-emitting device having a light-emitting active region; a tunneling-barrier (TB) structure facing adjacent the active region; a TB grown-epitaxial-metal-mirror (TB-GEMM) structure facing adjacent the TB structure, wherein the TB-GEMM structure includes at least one metal is substantially lattice matched to the active region; and a conductivity-type III-nitride crystal structure adjacent facing the active region opposite the TB structure. In some embodiments, the active region includes an MQW structure. In some embodiments, the TB-GEMM includes an alloy composition such that metal current injectors have a Fermi energy potential substantially equal to the sub-band minimum energy potential of the MQW. Some embodiments further include a second mirror (optionally a GEMM) to form an optical cavity between the second mirror and the TB-GEMM structure. In some embodiments, at least one of the GEMM is deposited on, and lattice matched to, a substrate.
Abstract translation: 一种用于制作它的装置和方法。 一些实施例包括具有发光有源区的发光器件; 面向邻近有源区的隧道势垒（TB）结构; 面向TB结构的TB生长外延金属镜（TB-GEMM）结构，其中TB-GEMM结构包括至少一种金属与活性区基本上晶格匹配; 以及与TB结构相对的有源区域相邻的导电型III族氮化物晶体结构。 在一些实施例中，活动区域包括MQW结构。 在一些实施方案中，TB-GEMM包括合金组合物，使得金属电流注入器具有基本上等于MQW的子带最小能量势的费米能量势。 一些实施例还包括在第二反射镜和TB-GEMM结构之间形成光腔的第二反射镜（可选地为GEMM）。 在一些实施例中，GEMM中的至少一个沉积在衬底上，并且与衬底晶格匹配。
-
5.发明申请III-NITRIDE LIGHT-EMITTING DEVICES WITH REFLECTIVE ENGINEERED GROWTH TEMPLATES AND MANUFACTURING METHOD 审中-公开具有反射工程生长模式的III-NITRIDE发光装置和制造方法公开(公告)号：US20130056777A1
公开(公告)日：2013-03-07
申请号：US13597130
申请日：2012-08-28
Applicant: Robbie J. Jorgenson
Inventor： Robbie J. Jorgenson
CPC classification number: H01L33/105 , H01L33/32 , H01L33/405 , H01L33/465 , H01L33/60
Abstract: A light emitter includes a first mirror that is an epitaxially grown metal mirror, a second mirror, and an active region that is epitaxially grown such that the active region is positioned at or close to, at least, one antinode between the first mirror and the second mirror.
Abstract translation: 光发射器包括外延生长的金属反射镜，第二反射镜和外延生长的有源区的第一反射镜，使得有源区位于或靠近第一反射镜和第二反射镜之间的至少一个波腹 第二镜。
-
Patent Agency Ranking
6.发明授权III-Nitride light-emitting devices with reflective engineered growth templates and manufacturing method 有权具有反射工程生长模板的III型氮化物发光器件及其制造方法公开(公告)号：US08890183B2
公开(公告)日：2014-11-18
申请号：US13597130
申请日：2012-08-28
Applicant: Robbie J. Jorgenson
Inventor： Robbie J. Jorgenson
CPC classification number: H01L33/105 , H01L33/32 , H01L33/405 , H01L33/465 , H01L33/60
Abstract: A light emitter includes a first mirror that is an epitaxially grown metal mirror, a second mirror, and an active region that is epitaxially grown such that the active region is positioned at or close to, at least, one antinode between the first mirror and the second mirror.
Abstract translation: 光发射器包括外延生长的金属反射镜，第二反射镜和外延生长的有源区的第一反射镜，使得有源区位于或靠近第一反射镜和第二反射镜之间的至少一个波腹 第二镜。
-
公开(公告)号：US08865492B2
公开(公告)日：2014-10-21
申请号：US12956640
申请日：2010-11-30
Applicant: Robbie J. Jorgenson , David J. King
Inventor： Robbie J. Jorgenson , David J. King
CPC classification number: H01L33/105 , H01L33/04 , H01L33/06 , H01L33/405 , Y10T29/5313
Abstract: An apparatus and method for making same. Some embodiments include a light-emitting device having a light-emitting active region; a tunneling-barrier (TB) structure facing adjacent the active region; a TB grown-epitaxial-metal-mirror (TB-GEMM) structure facing adjacent the TB structure, wherein the TB-GEMM structure includes at least one metal is substantially lattice matched to the active region; and a conductivity-type III-nitride crystal structure adjacent facing the active region opposite the TB structure. In some embodiments, the active region includes an MQW structure. In some embodiments, the TB-GEMM includes an alloy composition such that metal current injectors have a Fermi energy potential substantially equal to the sub-band minimum energy potential of the MQW. Some embodiments further include a second mirror (optionally a GEMM) to form an optical cavity between the second mirror and the TB-GEMM structure. In some embodiments, at least one of the GEMM is deposited on, and lattice matched to, a substrate.
Abstract translation: 一种用于制造它的装置和方法。 一些实施例包括具有发光有源区的发光器件; 面向邻近有源区的隧道势垒（TB）结构; 面向TB结构的TB生长外延金属镜（TB-GEMM）结构，其中TB-GEMM结构包括至少一种金属与活性区基本上晶格匹配; 以及与TB结构相对的有源区域相邻的导电型III族氮化物晶体结构。 在一些实施例中，活动区域包括MQW结构。 在一些实施方案中，TB-GEMM包括合金组合物，使得金属电流注入器具有基本上等于MQW的子带最小能量势的费米能量势。 一些实施例还包括在第二反射镜和TB-GEMM结构之间形成光腔的第二反射镜（可选地为GEMM）。 在一些实施例中，GEMM中的至少一个沉积在衬底上，并且与衬底晶格匹配。
-
8.发明申请MATERIALS, STRUCTURES, AND METHODS FOR OPTICAL AND ELECTRICAL III-NITRIDE SEMICONDUCTOR DEVICES 审中-公开光电三极半导体器件的材料，结构和方法公开(公告)号：US20140008660A1
公开(公告)日：2014-01-09
申请号：US13831350
申请日：2013-03-14
Applicant: LIGHTWAVE PHOTONICS, INC.
Inventor： Robbie J. Jorgenson
IPC: H01L29/20
CPC classification number: H01L31/03044 , B82Y20/00 , G02B6/1225 , H01L21/0237 , H01L21/02458 , H01L21/02491 , H01L21/02507 , H01L21/0254 , H01L29/2003 , H01L31/02327 , H01L31/035209 , H01L31/1856 , H01L33/007 , H01L33/0075 , H01L33/06 , H01L33/10 , H01L33/32 , H01L41/187 , H01L2933/0058 , H03H9/02015 , H03H9/02543
Abstract: The present invention provides materials, structures, and methods for III-nitride-based devices, including epitaxial and non-epitaxial structures useful for III-nitride devices including light emitting devices, laser diodes, transistors, detectors, sensors, and the like. In some embodiments, the present invention provides metallo-semiconductor and/or metallo-dielectric devices, structures, materials and methods of forming metallo-semiconductor and/or metallo-dielectric material structures for use in semiconductor devices, and more particularly for use in III-nitride based semiconductor devices. In some embodiments, the present invention includes materials, structures, and methods for improving the crystal quality of epitaxial materials grown on non-native substrates. In some embodiments, the present invention provides materials, structures, devices, and methods for acoustic wave devices and technology, including epitaxial and non-epitaxial piezoelectric materials and structures useful for acoustic wave devices. In some embodiments, the present invention provides metal-base transistor devices, structures, materials and methods of forming metal-base transistor material structures for use in semiconductor devices.
Abstract translation: 本发明提供了用于III族氮化物的器件的材料，结构和方法，包括用于包括发光器件，激光二极管，晶体管，检测器，传感器等的III族氮化物器件的外延和非外延结构。 在一些实施方案中，本发明提供用于形成用于半导体器件的金属半导体和/或金属介电材料结构的金属半导体和/或金属介电器件，结构，材料和方法，更特别地用于III 基于氮化物的半导体器件。 在一些实施方案中，本发明包括用于改善在非天然基底上生长的外延材料的晶体质量的材料，结构和方法。 在一些实施例中，本发明提供了用于声波器件和技术的材料，结构，器件和方法，包括用于声波器件的外延和非外延压电材料和结构。 在一些实施例中，本发明提供了用于形成用于半导体器件的金属基晶体管材料结构的金属基晶体管器件，结构，材料和方法。
-
9.发明授权III-nitride light-emitting devices with reflective engineered growth templates and methods of manufacture 有权具有反射工程生长模板的III族氮化物发光器件和制造方法公开(公告)号：US08253157B2
公开(公告)日：2012-08-28
申请号：US13075104
申请日：2011-03-29
Applicant: Robbie J. Jorgenson
Inventor： Robbie J. Jorgenson
CPC classification number: H01L33/105 , H01L33/32 , H01L33/405 , H01L33/465 , H01L33/60
Abstract: A light emitter includes a first mirror that is an epitaxially grown metal mirror, a second mirror, and an active region that is epitaxially grown such that the active region is positioned at or close to, at least, one antinode between the first mirror and the second mirror.
Abstract translation: 光发射器包括外延生长的金属反射镜，第二反射镜和外延生长的有源区的第一反射镜，使得有源区位于或靠近第一反射镜和第二反射镜之间的至少一个波腹 第二镜。
-
公开(公告)号：US07842939B2
公开(公告)日：2010-11-30
申请号：US12393029
申请日：2009-02-25
Applicant: Robbie J. Jorgenson , David J. King
Inventor： Robbie J. Jorgenson , David J. King
IPC: H01L29/06
CPC classification number: H01L33/105 , H01L33/04 , H01L33/06 , H01L33/405 , Y10T29/5313
Abstract: An apparatus and method for making it. Some embodiments include a light-emitting device having a light-emitting active region; a tunneling-barrier (TB) structure facing adjacent the active region; a TB grown-epitaxial-metal-mirror (TB-GEMM) structure facing adjacent the TB structure, wherein the TB-GEMM structure includes at least one metal is substantially lattice matched to the active region; and a conductivity-type III-nitride crystal structure adjacent facing the active region opposite the TB structure. In some embodiments, the active region includes an MQW structure. In some embodiments, the TB-GEMM includes an alloy composition such that metal current injectors have a Fermi energy potential substantially equal to the sub-band minimum energy potential of the MQW. Some embodiments further include a second mirror (optionally a GEMM) to form an optical cavity between the second mirror and the TB-GEMM structure. In some embodiments, at least one of the GEMM is deposited on, and lattice matched to, a substrate.
Abstract translation: 一种用于制作它的装置和方法。 一些实施例包括具有发光有源区的发光器件; 面向邻近有源区的隧道势垒（TB）结构; 面向TB结构的TB生长外延金属镜（TB-GEMM）结构，其中TB-GEMM结构包括至少一种金属与活性区基本上晶格匹配; 以及与TB结构相对的有源区域相邻的导电型III族氮化物晶体结构。 在一些实施例中，活动区域包括MQW结构。 在一些实施方案中，TB-GEMM包括合金组合物，使得金属电流注入器具有基本上等于MQW的子带最小能量势的费米能量势。 一些实施例还包括在第二反射镜和TB-GEMM结构之间形成光腔的第二反射镜（可选地为GEMM）。 在一些实施例中，GEMM中的至少一个沉积在衬底上，并且与衬底晶格匹配。
-
-
-
-
-
-
-
-
-
Search Results
10
records
(took 0.024 seconds)
