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1.发明公开公开(公告)号：US20240253975A1
公开(公告)日：2024-08-01
申请号：US18608595
申请日：2024-03-18
发明人： George Xereas , Vahid Tayari , Ahmed Khorshid , Charles Allan
CPC分类号： B81B3/0021 , B81B7/0087 , H03H9/02448 , B81B2201/0271 , H03H2009/2442
摘要： An example resonating structure comprises a substrate, a resonator body, and an anchoring body for anchoring the resonator body to the substrate. The resonator body is doped with a dopant having a concentration chosen so as to minimize a second order temperature coefficient of frequency for the resonator body. The resonator body is operable in an in-plane mode of vibration and an out-of-plane mode of vibration.
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公开(公告)号：US20230308076A1
公开(公告)日：2023-09-28
申请号：US18324902
申请日：2023-05-26
CPC分类号： H03H9/1057 , B81C1/00182 , H03H9/2426 , H03H3/0072 , H03H3/0073 , B81B7/007 , G01L9/12 , H03H9/0561 , G01L9/0042 , G01L9/0073 , B81C1/00269 , B81C1/00301 , H03H9/2405 , H03H9/2436 , H03H9/2431 , H03H9/2478 , H03H2009/2442 , B81B2203/0307 , H03H9/2452 , H03H9/2463 , H03H9/2473
摘要： A MEMS device may include: (i) a lower cavity, including a first island, formed within a first layer of the MEMS device; (ii) an upper cavity, including a second island, formed within a second layer of the MEMS device; (iii) a MEMS resonating element arranged in a device layer of the MEMS device and anchored via the first and second islands; (iv) a first set of electrodes for electrostatic actuation and sensing of the MEMS resonating element in an in-plane mode that is arranged in the device layer of the MEMS device; and (v) a second set of electrodes for electrostatic actuation and sensing of the MEMS resonating element in an out-of-plane mode that is electrically isolated from the first set of electrodes and located in the first or second layer of the MEMS device, and wherein the out-of-plane mode is a torsional mode or a saddle mode.
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3.发明授权公开(公告)号：US11932530B2
公开(公告)日：2024-03-19
申请号：US18165118
申请日：2023-02-06
发明人： George Xereas , Vahid Tayari , Ahmed Khorshid , Charles Allan
CPC分类号： B81B3/0021 , B81B7/0087 , H03H9/02448 , B81B2201/0271 , H03H2009/2442
摘要： An example resonating structure comprises a substrate, a resonator body, and an anchoring body for anchoring the resonator body to the substrate. The resonator body includes a layer of base material and, deposited on top of the layer of base material, a layer of mismatch material having a mismatch in temperature coefficient of elasticity (TCE) relative to the base material. The base material is doped with a dopant having a concentration chosen so as to minimize a second order temperature coefficient of frequency for the resonator body. The thickness of the layer of the mismatch material is chosen so as to minimize a first order temperature coefficient of frequency for the resonator body.
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4.发明授权公开(公告)号：US11305981B2
公开(公告)日：2022-04-19
申请号：US17256525
申请日：2019-06-28
发明人： George Xereas , Vahid Tayari , Ahmed Khorshid , Charles Allan
摘要： There is provided a dual-output microelectromechanical system (MEMS) resonator. The MEMS resonator can be operated selectively and concurrently in an in-plane mode of vibration and an out-of-plane mode of vibration to obtain respectively a first electrical signal having a first frequency, and a second electrical signal having a second frequency being less than the first frequency. The first and second electrical signals are mixed to obtain a third electrical signal having a third frequency, where the third frequency is proportional to a temperature of the MEMS resonator. The temperature is determined based on the third frequency. Values of the first and second frequencies can be adjusted based on the determined temperature to compensate for frequency deviations due to temperature deviations. There is also provided methods and systems for determining the temperature of the dual-output MEMS, for compensating the frequency, and a method of manufacturing the dual-output MEMS.
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5.发明申请公开(公告)号：US20210276858A1
公开(公告)日：2021-09-09
申请号：US17256525
申请日：2019-06-28
发明人： George Xereas , Vahid Tayari , Ahmed Khorshid , Charles Allan
摘要： There is provided a dual-output microelectromechanical system (MEMS) resonator. The MEMS resonator can be operated selectively and concurrently in an in-plane mode of vibration and an out-of-plane mode of vibration to obtain respectively a first electrical signal having a first frequency, and a second electrical signal having a second frequency being less than the first frequency. The first and second electrical signals are mixed to obtain a third electrical signal having a third frequency, where the third frequency is proportional to a temperature of the MEMS resonator. The temperature is determined based on the third frequency. Values of the first and second frequencies can be adjusted based on the determined temperature to compensate for frequency deviations due to temperature deviations. There is also provided methods and systems for determining the temperature of the dual-output MEMS, for compensating the frequency, and a method of manufacturing the dual-output MEMS.
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公开(公告)号：US12081192B2
公开(公告)日：2024-09-03
申请号：US18324902
申请日：2023-05-26
CPC分类号： H03H9/1057 , B81B7/007 , B81C1/00182 , B81C1/00269 , B81C1/00301 , G01L9/0042 , G01L9/0073 , G01L9/12 , H03H3/0072 , H03H3/0073 , H03H9/0561 , H03H9/2405 , H03H9/2426 , H03H9/2431 , H03H9/2436 , B81B2203/0307 , H03H2009/2442 , H03H9/2452 , H03H9/2463 , H03H9/2473 , H03H9/2478
摘要： A MEMS device may include: (i) a lower cavity, including a first island, formed within a first layer of the MEMS device; (ii) an upper cavity, including a second island, formed within a second layer of the MEMS device; (iii) a MEMS resonating element arranged in a device layer of the MEMS device and anchored via the first and second islands; (iv) a first set of electrodes for electrostatic actuation and sensing of the MEMS resonating element in an in-plane mode that is arranged in the device layer of the MEMS device; and (v) a second set of electrodes for electrostatic actuation and sensing of the MEMS resonating element in an out-of-plane mode that is electrically isolated from the first set of electrodes and located in the first or second layer of the MEMS device, and wherein the out-of-plane mode is a torsional mode or a saddle mode.
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7.发明公开公开(公告)号：US20230336162A1
公开(公告)日：2023-10-19
申请号：US18300188
申请日：2023-04-13
发明人： Nikola Katic , Javid Musayev
CPC分类号： H03K3/011 , H03K5/135 , H03K5/00006
摘要： A system for reference clock frequency correction is described. The system comprises a compensation module configured to (i) receive, as input, an oscillator signal and one or more control signals, (ii) generate a compensation signal based on the oscillator signal and the one or more control signals, wherein the generated compensation signal is a discretized sinusoidal signal having a controllable frequency, and (iii) output the generated compensation signal. The system further comprises a mixer block configured to (i) receive, as input, the generated compensation signal and the oscillator signal, and (ii) generate an output clock signal by mixing the generated compensation signal with the oscillator signal. A soft-switching method to reduce the effect of quantization noise is further described.
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公开(公告)号：US11479460B2
公开(公告)日：2022-10-25
申请号：US16369757
申请日：2019-03-29
发明人： Vamsy Chodavarapu , George Xereas
摘要： MEMS based sensors, particularly capacitive sensors, potentially can address critical considerations for users including accuracy, repeatability, long-term stability, ease of calibration, resistance to chemical and physical contaminants, size, packaging, and cost effectiveness. Accordingly, it would be beneficial to exploit MEMS processes that allow for manufacturability and integration of resonator elements into cavities within the MEMS sensor that are at low pressure allowing high quality factor resonators and absolute pressure sensors to be implemented. Embodiments of the invention provide capacitive sensors and MEMS elements that can be implemented directly above silicon CMOS electronics.
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9.发明公开公开(公告)号：US20240294372A1
公开(公告)日：2024-09-05
申请号：US18647923
申请日：2024-04-26
发明人： Anosh Daruwalla , Reuble Mathew
CPC分类号： B81B3/0081 , B81C1/0069 , H03H9/02448 , B81B2201/0271 , B81B2203/0307 , B81B2203/033 , B81B2203/04 , B81C2201/013 , H03H2009/02251
摘要： A MEMS resonator device includes: (i) a support structure, (ii) a resonator element doped with at least one of N-type or P-type dopants, wherein a doping concentration of the at least one of N-type or P-type dopants causes a closely temperature-compensated mode in which (a) an absolute value of a first order temperature coefficient of frequency of the resonator element is reduced to a first value below a threshold value and (b) an absolute value of a second order temperature coefficient of frequency of the resonator element is reduced to about zero, and wherein an anchor decoupler region formed on the resonator element causes the absolute value to be further reduced to a second value, and (iii) at least one anchor coupling the resonator element to the support structure, wherein the anchor decoupler region is formed on the resonator element at least partially surrounding the at least one anchor.
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10.发明公开公开(公告)号：US20230264946A1
公开(公告)日：2023-08-24
申请号：US18166838
申请日：2023-02-09
CPC分类号： B81B3/0018 , B81C99/006 , B81B2201/0271 , B81B2203/0315 , B81B2203/0307 , B81B2203/04
摘要： There is provided a MEMS resonator comprising a support structure, a distributed cross-sectional resonator element with a particular eigenmode, at least one anchor coupling the distributed cross-sectional resonator element to the support structure, at least one drive electrode for actuating the particular eigenmode, and at least one sense electrode for sensing the particular eigenmode. The particular eigenmode is defined by a propagating series of modes, such as a plurality of Lamé modes. The MEMS resonator may be homogenously doped with one of N-type or P-type dopants, such that a second order temperature coefficient of frequency of the distributed cross-sectional resonator element is about zero. Additionally, the first order temperature coefficient of frequency may be reduced to about zero by modifying the ratio of elongation of the distributed cross-sectional resonator element or by modifying the material composition of the distributed cross-sectional resonator element.
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