公开(公告)号：US07235137B2

公开(公告)日：2007-06-26

申请号：US10466116

申请日：2001-12-10

申请人： Hirofumi Kitayama ,  Noriaki Matsushima

发明人： Hirofumi Kitayama ,  Noriaki Matsushima

IPC分类号： H01L21/302 ,  C23C16/00

CPC分类号： H01L21/67109 ,  C30B31/14 ,  C30B31/16

摘要： A single-substrate processing apparatus (20) has a worktable (40) disposed in a process chamber (24), which accommodates a target substrate (W). The worktable (40) has a thermally conductive mount surface (41) to place the target substrate (W) thereon. The worktable (40) is provided with a flow passage (50) formed therein, in which a thermal medium flows for adjusting temperature of the target substrate (W) through the mount surface (41). The flow passage (50) is connected to a thermal medium supply system (54), which selectively supplies a cooling medium and a heating medium.

摘要翻译： 单基板处理装置（20）具有设置在容纳目标基板（W）的处理室（24）中的工作台（40）。 工作台（40）具有用于将目标衬底（W）放置在其上的导热安装表面（41）。 工作台（40）具有形成在其中的流路（50），其中热介质流过用于通过安装表面（41）调节目标基板（W）的温度。 流路（50）连接到热介质供给系统（54），该系统选择性地供应冷却介质和加热介质。

公开(公告)号：US06360762B1

公开(公告)日：2002-03-26

申请号：US09765665

申请日：2001-01-22

申请人： Hirofumi Kitayama ,  Yoichi Kurono ,  Nobukazu Ikeda ,  Naoya Masuda

发明人： Hirofumi Kitayama ,  Yoichi Kurono ,  Nobukazu Ikeda ,  Naoya Masuda

IPC分类号： F16K3102

摘要： An apparatus for feeding gases for use in semiconductor manufacturing reduced in size and manufacturing costs and facilitating maintenance and operation of the gas supply system. The apparatus comprises a plurality of gas supply sources, gas source valves provided on the gas lead-out pipes from the respective gas supply sources, flow rate controllers provided on main gas feed pipes into which the lead-out pipes converge, and gas supply valves provided on the outlet side of the flow rate controllers.

公开(公告)号：US5316472A

公开(公告)日：1994-05-31

申请号：US991597

申请日：1992-12-16

申请人： Reiji Niino ,  Isao Siratani ,  Yutaka Simada ,  Hiroki Fukusima ,  Hirofumi Kitayama ,  Akimichi Yonekura ,  Yuuichi Mikata

发明人： Reiji Niino ,  Isao Siratani ,  Yutaka Simada ,  Hiroki Fukusima ,  Hirofumi Kitayama ,  Akimichi Yonekura ,  Yuuichi Mikata

IPC分类号： H01L21/324 ,  C23C16/458 ,  C30B25/12 ,  H01L21/22 ,  H01L21/673 ,  F27D3/12

CPC分类号： H01L21/67309 ,  C23C16/4583 ,  C30B25/12

摘要： A semiconductor wafer boat used in a vertical CVD apparatus includes four columns fixed to upper and lower support plates. Each of the columns has a plurality of first grooves arranged at regular intervals in the vertical direction so as to place wafers in substantially parallel to each other, and a plurality of second grooves formed alternately with the first grooves. A plate ring is provided for each of the second grooves so as to improve the uniformity of thickness of a film to be formed on each wafer. Each ring has an outer diameter larger than that of a wafer, and an inner diameter smaller than that of the wafer. Each ring is placed such that there is a clearance for transferring each wafer between each ring and each wafer in the vertical direction.

摘要翻译： 在垂直CVD装置中使用的半导体晶片舟包括固定到上支撑板和下支撑板的四列。 每个列具有在垂直方向上以规则间隔布置的多个第一凹槽，以便将晶​​片彼此基本平行地放置，以及与第一凹槽交替形成的多个第二凹槽。 为每个第二槽设置板环，以提高在每个晶片上形成的膜的厚度的均匀性。 每个环的外径大于晶片的外径，内径小于晶片的内径。 每个环被放置成使得在垂直方向上存在用于在每个环和每个晶片之间传送每个晶片的间隙。

公开(公告)号：US5217501A

公开(公告)日：1993-06-08

申请号：US729836

申请日：1991-07-12

申请人： Noboru Fuse ,  Hirofumi Kitayama ,  Hisashi Hattori

发明人： Noboru Fuse ,  Hirofumi Kitayama ,  Hisashi Hattori

IPC分类号： C23C16/54 ,  C30B35/00 ,  H01L21/00 ,  H01L21/677

CPC分类号： H01L21/67069 ,  C23C16/54 ,  C30B35/005 ,  H01L21/67745 ,  H01L21/67757 ,  Y10T29/41

摘要： A vertical wafer heat treatment apparatus for for forming a film on and dry etching a plurality of wafers stored in a wafer boat. The apparatus has at least first and second load lock chambers connected by a gate. Each load lock has an inert gas independently introduced therein and exhausted therefrom. The load lock chambers are vertically connected between two separate process containers. An elevator is provided in the first load lock chamber to transfer a wafer boat into and out of the first container. A transfer means is provided in the second load lock to transfer wafers into and out of a wafer boat.

摘要翻译： 一种垂直晶片热处理设备，用于在存储在晶片舟皿中的多个晶片上形成膜并干蚀刻。 该装置具有至少通过门连接的第一和第二负载锁定室。 每个负载锁具有独立地引入其中并从其中排出的惰性气体。 负载锁定室垂直连接在两个分开的处理容器之间。 电梯设置在第一负载锁定室中以将晶片舟皿转入和移出第一容器。 在第二加载锁中提供转移装置以将晶片转入和离开晶片舟皿。

公开(公告)号：US5110248A

公开(公告)日：1992-05-05

申请号：US550981

申请日：1990-07-11

申请人： Takanobu Asano ,  Hirofumi Kitayama ,  Hiroyuki Iwai ,  Yuuji Ono

发明人： Takanobu Asano ,  Hirofumi Kitayama ,  Hiroyuki Iwai ,  Yuuji Ono

IPC分类号： H01L21/00 ,  H01L21/677

CPC分类号： H01L21/67115 ,  H01L21/67781

摘要： A vertical heat-treatment apparatus is provided with a mechanism for automatically transferring semiconductor wafers from carriers to a boat for a vertical type furnace. The automatic transferring mechanism comprises a port for receiving a plurality of carriers arranged in series in an upright state, a posture change mechanism for changing the posture of wafers in the carriers from the upright state to the horizontal state, a parallel transfer mechanism for transferring the carriers on the boat to the posture change mechanism, a carrier loading/unloading mechanism for loading the carriers on a station, a wafer loading/unloading mechanism for taking out the wafers from the carriers on the station in turn and transferring the taken-out wafers to the boat in turn, and a mounting mechanism for mounting the boat in the furnace. The carrier loading/unloading mechanism and the wafer loading/unloading mechanism are mounted on a common frame and are rotated and lifted at the same time.

摘要翻译： 立式热处理装置设置有用于将半导体晶片从载体自动转移到垂直型炉的船的机构。 自动转印机构包括用于接收以直立状态串联布置的多个载体的端口，用于将载体中的晶片的姿势从直立状态改变为水平状态的姿势改变机构，用于传送 船上的载体到姿势改变机构，用于将载体载载在车站上的载体装载/卸载机构，用于依次从车站上的载体取出晶片的晶片装载/卸载机构，并传送取出的晶片 依次转到船上，以及用于将船安装在炉中的安装机构。 载体装载/卸载机构和晶片装载/卸载机构安装在公共框架上并同时旋转和提升。

公开(公告)号：US5030056A

公开(公告)日：1991-07-09

申请号：US555645

申请日：1990-07-23

申请人： Hirofumi Kitayama ,  Mitsuo Kato ,  Eiichiro Takanabe ,  Masaru Kobayashi

发明人： Hirofumi Kitayama ,  Mitsuo Kato ,  Eiichiro Takanabe ,  Masaru Kobayashi

IPC分类号： H01L21/677 ,  B65G49/07 ,  H01L21/687

CPC分类号： H01L21/68707 ,  Y10S414/135

摘要： A substrate transfer device containing an arm support member for supporting plural substrate support arms at one ends thereof, said arms having substrate housing areas at the other ends thereof, a structure arranged on a base to freely move in the longitudinal direction of the substrate support arms while holding the arm support member, another arm support member for holding a substrate support arm at the other side of the first arm support member, a structure arranged on the base to freely move in the longitudinal direction of the one substrate support arm while holding the arm support member for one substrate, a structure for moving the base up and down, and a structure for moving the base in a direction perpendicular to the substrate support arms on a plane parallel to the plane in which the substrate support arms are included.

摘要翻译： 一种基板传送装置，包括用于在其一端处支撑多个基板支撑臂的臂支撑构件，所述臂在其另一端处具有基板容纳区域，布置在基部上以在基板支撑臂的纵向方向上自由移动的结构 同时保持臂支撑构件，另一个臂支撑构件用于将基板支撑臂保持在第一臂支撑构件的另一侧，布置在基座上以在保持第一臂支撑构件的一个基板支撑臂的纵向方向上自由移动的结构 用于一个基板的支撑构件，用于上下移动基座的结构，以及用于在垂直于基板支撑臂的方向上平行于包括基板支撑臂的平面的平面移动基座的结构。

公开(公告)号：US6095806A

公开(公告)日：2000-08-01

申请号：US337402

申请日：1999-06-22

申请人： Shizuo Suzuki ,  Hisashi Kitamiya ,  Hirofumi Kitayama

发明人： Shizuo Suzuki ,  Hisashi Kitamiya ,  Hirofumi Kitayama

IPC分类号： H01L21/683 ,  C23C16/458 ,  C30B25/12 ,  C30B31/14 ,  H01L21/22 ,  H01L21/68 ,  F27D5/00

CPC分类号： C30B25/12 ,  C23C16/4583 ,  C30B31/14 ,  Y10S414/138

摘要： A boat for semiconductor wafers includes first, second and third support rods arranged between and connected to top and bottom plates. The first, second and third support rods include a plurality of first racks, a plurality of second racks, and a plurality of third racks, respectively, such that the racks of each rods are vertically arrayed with gaps therebetween. The first, second and third racks serving to define a plurality of horizontal wafer supporting levels. Each wafer supporting level is defined by only combination of the first, second and third racks of the corresponding height. In each wafer supporting level, the first and second racks are arranged substantially in symmetry with respect to an axis passing through the center of a wafer transfer port, and the third rack is arranged deviant from the axis by a certain distance corresponding to 5% to 48% of the diameter of the wafer.

摘要翻译： 用于半导体晶片的船包括布置在顶板和底板之间并连接到顶板和底板的第一，第二和第三支撑杆。 第一，第二和第三支撑杆分别包括多个第一机架，多个第二机架和多个第三机架，使得每个杆的齿条在其间具有间隙而垂直排列。 第一，第二和第三机架用于限定多个水平晶片支撑水平。 每个晶片支撑水平仅由对应高度的第一，第二和第三机架的组合限定。 在每个晶片支撑水平中，第一和第二机架相对于通过晶片传送端口的中心的轴线基本上对称布置，并且第三机架布置在与轴线偏离一定距离，对应于5％至 晶圆直径的48％。

公开(公告)号：US5445521A

公开(公告)日：1995-08-29

申请号：US250379

申请日：1994-05-27

申请人： Eiji Yamaguchi ,  Kaoru Fujihara ,  Takenobu Matsuo ,  Hirofumi Kitayama

发明人： Eiji Yamaguchi ,  Kaoru Fujihara ,  Takenobu Matsuo ,  Hirofumi Kitayama

IPC分类号： C23C16/44 ,  C23C16/455 ,  C23C16/52 ,  C30B25/14 ,  F27D19/00 ,  F27D5/00

CPC分类号： C23C16/45557 ,  C23C16/4401 ,  C23C16/52 ,  C30B25/14 ,  F27D19/00 ,  F27D2019/0009 ,  F27D2019/0068

摘要： A heat treating device including a pressure detecting unit for outputting an output signal when a pressure in a heat processing furnace becomes a set value, an air release pipe having a first valve and a check valve, a differential pressure gauge shut off by a second valve in terms of pressure from the interior of the heat processing furnace, and an air feed pipe having a third valve. One ends of each of the air release pipe and the air feed pipe is connected respectively to the heat processing furnace and the other ends opened in air. In such arrangement, after processing gases are evacuated from the heat processing furnace, an inert gas is fed. Then when an internal pressure of the furnace becomes near an air pressure, the first valve is opened in response to the output signal of the pressure detecting unit to make the internal pressure of the heat processing furnace a little higher than the air pressure. When a differential pressure value of the differential pressure gauge is below a set value, the third value is opened to communicate the interior of the heat processing furnace with air through the air feed pipe. Then the cap closing the opening of the heat processing furnace is opened.

摘要翻译： 一种热处理装置，包括：当热处理炉中的压力变为设定值时输出输出信号的压力检测单元;具有第一阀和止回阀的排气管，由第二阀关闭的差压表 在来自热处理炉的内部的压力和具有第三阀的进气管。 每个排气管和供气管的一端分别连接到热处理炉，另一端在空气中敞开。 在这样的布置中，在处理气体从热处理炉抽出之后，供给惰性气体。 然后，当炉子的内部压力接近空气压力时，响应于压力检测单元的输出信号打开第一阀门，使得热处理炉的内部压力比空气压力高一点。 当差压表的差压值低于设定值时，打开第三值，以使热处理炉的内部通过供气管与空气相通。 然后关闭热处理炉的开口的盖子打开。

公开(公告)号：US5162047A

公开(公告)日：1992-11-10

申请号：US789820

申请日：1991-11-12

申请人： Atsushi Wada ,  Hirofumi Kitayama

发明人： Atsushi Wada ,  Hirofumi Kitayama

IPC分类号： H01L21/677 ,  H01L21/687

CPC分类号： H01L21/68707 ,  H01L21/67778 ,  Y10S414/137 ,  Y10T29/41

摘要： According to this invention, a method of transferring a plurality of semiconductor wafers between a carrier and a support ring type boat comprises the steps of picking up the semiconductor wafer from the carrier on a station by an arm in a substantially horizontal state, positioning the wafer supported by the arm above a support ring of the boat, positioning a receiver below the support ring, moving the receiver upward to a position where a pin of the receiver reaches the arm through an opening of the support ring, lifting the wafer from the arm by the pin, moving the arm backward from the boat, moving the receiver downward to a position where the wafer is transferred from the receiver to the support ring, and then loading the boat into a heat treatment furnace.

摘要翻译： 根据本发明，在载体和支撑环型舟皿之间转移多个半导体晶片的方法包括以下步骤：通过臂以基本水平的状态从站上的载体上拾取半导体晶片，将晶片定位 在支撑环的支撑环上方由支撑环支撑，将接收器放置在支撑环下方，将接收器向上移动到接收器的针通过支撑环的开口到达臂的位置，将晶片从臂提起 通过销将手臂从船上向后移动，将接收器向下移动到晶片从接收器转移到支撑环的位置，然后将船装载到热处理炉中。

公开(公告)号：US06210482B1

公开(公告)日：2001-04-03

申请号：US09296136

申请日：1999-04-22

申请人： Hirofumi Kitayama ,  Yoichi Kurono ,  Nobukazu Ikeda ,  Naoya Masuda

发明人： Hirofumi Kitayama ,  Yoichi Kurono ,  Nobukazu Ikeda ,  Naoya Masuda

IPC分类号： C23C1600

CPC分类号： H01L21/67017 ,  C23C16/44 ,  C23C16/455 ,  C23C16/45561 ,  F17D1/04 ,  G05D7/0641 ,  Y10T137/0318 ,  Y10T137/0352 ,  Y10T137/86389 ,  Y10T137/87314 ,  Y10T137/87676 ,  Y10T137/87692

摘要： An apparatus for feeding gases for use in semiconductor manufacturing reduced in size and manufacturing costs and facilitating maintenance and operation of the gas supply system. The apparatus comprises a plurality of gas supply sources, gas source valves provided on the gas lead-out pipes from the respective gas supply sources, flow rate controllers provided on main gas feed pipes into which the lead-out pipes converge, and gas supply valves provided on the outlet side of the flow rate controllers.

摘要翻译： 用于半导体制造中供给气体的装置减小了尺寸和制造成本，并促进了供气系统的维护和运行。 该装置包括多个气体供给源，从各个气体供给源设置在气体导出管上的气体源，设置在引出管汇接的主要供气管上的流量控制器，以及气体供给阀 设置在流量控制器的出口侧。