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    Grinding wheel manufacturing method and grinding wheel
    5.
    发明授权
    Grinding wheel manufacturing method and grinding wheel 有权

    公开(公告)号：US09908216B2

    公开(公告)日：2018-03-06

    申请号：US14372082

    申请日：2013-01-31

    申请人： JTEKT CORPORATION

    发明人： Shinji Soma ,  Naoto Ono ,  Tomoyuki Kasuga ,  Ryo Ito

    IPC分类号： B24D3/14 ,  B24D18/00 ,  B24D5/02 ,  B24D3/18 ,  C09K3/14

    CPC分类号： B24D3/14 ,  B24D3/18 ,  B24D5/02 ,  B24D18/0009 ,  C09K3/1445

    摘要： A method of manufacturing a grinding wheel, and a grinding wheel. After a first overcoat layer is formed on each of CBN abrasive grains, a second overcoat layer that is plastically deformed under a pressure lower than a pressure under which the first overcoat layer is deformed, is formed on the outer side of the first overcoat layer to manufacture coated abrasive grains. The coated abrasive grains are subjected to pressure-molding to be formed into a prescribed shape under a pressure that is equal to or higher than a pressure under which the second overcoat layer is plastically deformed. The second overcoat layers are deformed and flow to form a molded material having a structure in which the first overcoat layers contact each other, and the flowing second overcoat layers are moved into clearances between the coated abrasive grains. By sintering this, CBN abrasive grains are dispersed at a prescribed distance that is determined by the degree of outer radius of each first overcoat layer, and vacancies are arranged therebetween at a prescribed density.

    High Porosity Vitrified Superabrasive Products and Method of Preparation
    8.
    发明申请
    High Porosity Vitrified Superabrasive Products and Method of Preparation 有权
    高孔隙度陶瓷超级磨料产品及其制备方法

    公开(公告)号：US20130008091A1

    公开(公告)日：2013-01-10

    申请号：US13544800

    申请日：2012-07-09

    申请人： Rachana D. Upadhyay ,  Gilles Querel ,  Pradyumna Gupta ,  Richard W. J. Hall

    发明人： Rachana D. Upadhyay ,  Gilles Querel ,  Pradyumna Gupta ,  Richard W. J. Hall

    IPC分类号： B24D3/18

    CPC分类号： B24D3/18 ,  C09K3/1409

    摘要： A vitrified superabrasive product includes a superabrasive component and a vitrified bond component in which the superabrasive component is dispersed, wherein the vitrified bond component defines pores occupying greater than about 50% of the total volume of the vitrified superabrasive product. The vitrified superabrasive product can be in the form of a grinding tool, such as a grinding wheel. A superabrasive mixture includes a glass powder, a superabrasive grit, a binder and a silicon carbide. The mixture can be in the form of a green body, which is fired under an atmosphere and pressure, and at a temperature sufficient to form a porous vitrified superabrasive product.

    摘要翻译： 玻璃化超级磨料产品包括超磨料组分和其中分散有超级磨料组分的玻璃化粘合组分，其中玻璃化粘合组分限定占据玻璃化超级磨料产品总体积的约50％的孔。 玻璃化的超级磨料产品可以是研磨工具的形式，例如砂轮。 超级磨料混合物包括玻璃粉末，超磨料砂粒，粘合剂和碳化硅。 混合物可以是生坯体的形式，其在气氛和压力下，在足以形成多孔玻璃化超级磨料产品的温度下进行烧制。

    ABRASIVE TOOLS HAVING A CONTINUOUS METAL PHASE FOR BONDING AN ABRASIVE COMPONENT TO A CARRIER
    9.
    发明申请
    ABRASIVE TOOLS HAVING A CONTINUOUS METAL PHASE FOR BONDING AN ABRASIVE COMPONENT TO A CARRIER 有权
    具有连续金属相的磨料工具将磨料组件粘合到载体上

    公开(公告)号：US20100035530A1

    公开(公告)日：2010-02-11

    申请号：US12463228

    申请日：2009-05-08

    申请人： Ignazio Gosamo ,  Sebastien Marcel Robert Douveneau

    发明人： Ignazio Gosamo ,  Sebastien Marcel Robert Douveneau

    IPC分类号： B24D7/00 ,  B24D3/06 ,  B24D3/18 ,  B32B15/00 ,  B24D17/00

    CPC分类号： B24D3/10 ,  B24D3/06 ,  B24D3/18 ,  B24D7/066 ,  Y10T428/12806 ,  Y10T428/12847 ,  Y10T428/12896 ,  Y10T428/12903 ,  Y10T428/12931 ,  Y10T428/12986

    摘要： An abrasive article includes a carrier element, an abrasive component, and a bonding region between the abrasive component and the carrier element. The abrasive component includes abrasive particles bound in a metal matrix. The abrasive component further includes a network of interconnected pores substantially filled with an infiltrant. The infiltrant has an infiltrant composition containing at least one metal element. The bonding region includes a bonding metal having a bonding metal composition containing at least one metal element. The bonding region is a region distinct from the carrier element and is a separate phase from the carrier element. An elemental weight percent difference is the absolute value of the difference in weight content of each element contained in the bonding metal composition relative to the infiltrant composition. The elemental weight percent difference between the bonding metal composition and the infiltrant composition does not exceed 20 weight percent.

    摘要翻译： 磨料制品包括载体元件，研磨部件和研磨部件与载体元件之间的接合区域。 磨料组分包括结合在金属基质中的磨料颗粒。 研磨部件还包括基本上填充有浸润剂的互连孔的网。 浸润剂具有含有至少一种金属元素的渗透剂组合物。 接合区域包括具有包含至少一种金属元素的粘合金属组合物的接合金属。 接合区域是与载体元件不同的区域，并且是与载体元件分开的相位。 元素重量百分比差是粘合金属组合物中相对于浸润剂组合物含有的每种元素的重量含量差的绝对值。 粘合金属组合物和浸润剂组合物之间的元素重量百分比差异不超过20重量％。

    MANUFACTURING METHOD OF SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE
    10.
    发明申请
    MANUFACTURING METHOD OF SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE 审中-公开
    半导体集成电路器件的制造方法

    公开(公告)号：US20090117709A1

    公开(公告)日：2009-05-07

    申请号：US12347588

    申请日：2008-12-31

    申请人： Yoshiyuki ABE

    发明人： Yoshiyuki ABE

    IPC分类号： H01L21/00

    CPC分类号： H01L21/304 ,  B24B7/228 ,  B24D3/18 ,  B24D7/06 ,  B24D18/00 ,  H01L21/78

    摘要： The technology in which lowering of the manufacturing yield of the semiconductor products resulting from contamination impurities can be suppressed is offered.When reducing the thickness of a semiconductor wafer, so that a crushing layer which is relatively thin and has gettering function of, for example, less than 0.5 μm, less than 0.3 μm or less than 0.1 μm in thickness may be formed at the back surface, and the die strength after making the semiconductor wafer into chips by dividing or almost dividing may be secured, the back surface of the semiconductor wafer is ground by the diamond wheel which held the diamond abrasive of, for example, fineness number #5000 to #20000 with vitrified cement B1 which has countless bubbles and impregnated synthetic-resin B2 which has viscosity in the countless bubbles.

    摘要翻译： 提供了可以抑制由污染杂质导致的半导体产品的制造成品率降低的技术。 当减小半导体晶片的厚度时，可以在后表面形成相对薄且具有例如小于0.5μm，小于0.3μm或小于0.1μm的吸气功能的破碎层 ，并且可以确保通过分割或几乎分割将半导体晶片制成芯片之后的芯片强度，通过金刚石砂轮将半导体晶片的背面研磨，金刚石砂轮将例如细度数＃5000的金刚石磨料研磨至＃ 20000玻璃化水泥B1，其具有无数气泡和浸渍的合成树脂B2，其在无数个气泡中具有粘度。