Abstract:
A proximity sensor detects an object to be detected. The proximity sensor includes a board; at least three light emitting portions which are mounted on a surface of the board such that not all the light emitting portions is arranged on a straight line, and which emits light; and a light receiving portion which is mounted on the surface of the board so as to have a predetermined positional relationship with the three light emitting portions, and which receives reflected light derived from light emitted from the light emitting portions and reflected by the object to be detected.
Abstract:
A method for processing and/or analyzing image information representing radiation in a spatially resolved manner using an optical system coupled to at least one detector includes the step of collecting said image information with said optical system using at least one micromechanical mirror moved such that the image information is scanned and coupled sequentially into the at least one detector.
Abstract:
A device for measuring a temperature of an exhaust gas flow in an exhaust branch of an exhaust gas section of an internal combustion engine is disclosed. A sub-region of the exhaust branch is configured as a parabolic mirror having a focal point positioned outside of the exhaust branch. The device includes a side channel member attached to the exhaust branch and having an open end adjacent to the exhaust branch and a closed end; and a radiation sensitive sensor disposed in the side channel member and at the focal point. The open end is in fluid communication with an interior of the exhaust branch through a cutout of the exhaust branch so that the sensor is coupled to radiation of the exhaust gas flow for measuring a temperature of the exhaust gas flow. A related method is also disclosed.
Abstract:
The invention relates to a device for fiber optic temperature measurement with an optical fiber having a radiation coupling in area and a detector-associated radiation coupling out area. Such a device is characterized in that the optical fiber is constructed with high transmission in the infrared (IR) spectral range, particularly in the range from approximately 2 μm to approximately 20 μm.
Abstract:
A fiber-optic network for communicating non-invasive, real-time, in-situ semiconductor wafer radiance and emissivity measurements. The fiber-optic network includes a plurality of optical fibers, a plurality of fiber-optic bundles, and a chopper multiplexer. The fiber-optic bundle provides for the simultaneous transmission and receipt of coherent infrared light energy and radiant heat energy from a semiconductor wafer within a fabrication reactor. The fiber-optic bundles are designed to be sufficiently small to fit within hollow light pipe in a lamp module that directs optical heating energy to the wafer. This substantially eliminates measurement error that the lamp module generates in known measurement devices. Use of optical fibers for transmitting and receiving laser energy and wafer radiance permits precision placement of the fiber-optic bundles to measure multiple temperatures on the semiconductor wafer surface.
Abstract:
A high temperature optical probe for an optical gas temperature sensor includes a support, a generally conical hollow tip, and a joint physically interconnecting the support and the tip. The tip includes as an electromagnetic radiation emitter a sapphire-free ceramic selected from the group consisting of silicon carbide and silicon nitride.
Abstract:
A temperature detection device (10) for a vehicle heater detects a fluid temperature. The device includes a temperature sensor (12) as well as a contact element (14) with a first side (16), around which the fluid can flow in at least some sections, and with a second side (18) facing away from the first side (16). The temperature sensor (12) is configured as a radiation sensor. The contact element (14) is arranged relative to the temperature sensor (12) such that at least a part of the radiation emitted from the second side (18) of the contact element (14) can be received by the temperature sensor (12).
Abstract:
In one of various embodiments, a detector assembly is provided which includes a metallic layer having a repeating pattern of structures over a dielectric substrate. The metallic layer in conjunction with the dielectric substrate form a structure capable of focusing incident radiation to sub-wavelength high field regions. A plurality of detectors are disposed within the dielectric substrate in the high field regions created by the metallic layer. In some embodiments, an array of subwavelength sized detectors may be located in the high field regions.
Abstract:
A multi-point non-invasive, real-time pyrometry-based temperature sensor (200) for simultaneously sensing semiconductor wafer (22) temperature and compensating for wafer emissivity effects. The pyrometer (200) measures the radiant energy that a heated semiconductor wafer (22) emits and coherent beams of light (224) that the semiconductor wafer (22) reflects. As a result, the sensor (200) generates accurate, high-resolution multi-point measurements of semiconductor wafer (22) temperature during a device fabrication process. The pyrometer (200) includes an infrared laser source (202) that directs coherent light beam (203) into beam splitter (204). From the beam splitter (204), the coherent light beam (203) is split into numerous incident coherent beams (210). Beams (210) travel via optical fiber bundles (218) to the surface of semiconductor wafer (22) within the fabrication reactor (80). Each optical fiber bundle (218) collects reflected coherent light beam and radiant energy from wafer (22). Reflected coherent light beam (226) and radiant energy (222) is directed to a detector (240) for detecting signals and recording radiance, emissivity, and temperature values. Multiple optical fiber bundles (218) may be used in the sensor (200) for high spatial resolution multi-point measurements of wafer (22) temperature for precision real-time process control and uniformity optimizations.
Abstract:
A multi-point non-invasive, real-time pyrometry-based temperature sensor (200) for simultaneously sensing semiconductor wafer (22) temperature and compensating for wafer emissivity effects. The pyrometer (200) measures the radiant energy that a heated semiconductor wafer (22) emits and coherent beams of light (224) that the semiconductor wafer (22) reflects. As a result, the sensor (200) generates accurate, high-resolution multi-point measurements of semiconductor wafer (22) temperature during a device fabrication process. The pyrometer (200) includes an infrared laser source (202) that directs coherent light beam (203) into beam splitter (204). From the beam splitter (204), the coherent light beam (203) is split into numerous incident coherent beams (210). Beams (210) travel via optical fiber bundles (218) to the surface of semiconductor wafer (22) within the fabrication reactor (80). Each optical fiber bundle (218) collects reflected coherent light beam and radiant energy from wafer (22). Reflected coherent light beam (226) and radiant energy (222) is directed to a detector (240) for detecting signals and recording radiance, emissivity, and temperature values. Multiple optical fiber bundles (218) may be used in the sensor (200) for high spatial resolution multi-point measurements of wafer (22) temperature for precision real-time process control and uniformity optimizations.