利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

24 条记录 (耗时 0.014 秒)

    Two-wafer MEMS ionization device
    2.
    发明授权
    Two-wafer MEMS ionization device 有权
    双晶片MEMS电离装置

    公开(公告)号：US08779531B2

    公开(公告)日：2014-07-15

    申请号：US13338425

    申请日：2011-12-28

    申请人： Joseph V. Mantese ,  Antonio M. Vincitore

    发明人： Joseph V. Mantese ,  Antonio M. Vincitore

    IPC分类号： H01L27/14

    CPC分类号： H01J33/02 ,  G08B17/11 ,  H01J1/3044 ,  H01J9/025 ,  H01J2201/30415 ,  H01J2201/3048

    摘要： A microelectromechanical system (MEMS) assembly includes at least one emission source; a top wafer having a plurality of side walls and a generally horizontal portion, the horizontal portion having a thickness between a first side and a directly opposed second side, at least one window in the horizontal portion extending between the first and second sides and a transmission membrane across the at least one window; and a bottom wafer having a first portion with a first substantially planar surface, an intermediate surface directly opposed to the first substantially planar surface, a second portion with a second substantially planar surface, the at least one emission source provided on the second substantially planar surface; where the top wafer bonds to the bottom wafer at the intermediate surface and encloses a cavity within the top wafer and the bottom wafer.

    摘要翻译： 微机电系统（MEMS）组件包括至少一个发射源; 具有多个侧壁和大致水平部分的顶部晶片，所述水平部分具有在第一侧和直接相对的第二侧之间的厚度，所述水平部分中的至少一个窗口在所述第一侧和第二侧之间延伸， 膜穿过至少一个窗口; 以及底部晶片，其具有第一部分和第二基本上平坦的表面，与所述第一基本上平坦的表面直接相对的中间表面，具有第二基本平坦表面的第二部分，所述至少一个发射源设置在所述第二基本上平坦的表面上 ; 其中顶部晶片在中间表面处接合到底部晶片并且在顶部晶片和底部晶片内包围空腔。

    TWO-WAFER MEMS IONIZATION DEVICE
    3.
    发明申请
    TWO-WAFER MEMS IONIZATION DEVICE 有权
    双波长MEMS离子化装置

    公开(公告)号：US20130168781A1

    公开(公告)日：2013-07-04

    申请号：US13338425

    申请日：2011-12-28

    申请人： Joseph V. Mantese ,  Antonio M. Vincitore

    发明人： Joseph V. Mantese ,  Antonio M. Vincitore

    IPC分类号： H01L29/66 ,  H01L21/02

    CPC分类号： H01J33/02 ,  G08B17/11 ,  H01J1/3044 ,  H01J9/025 ,  H01J2201/30415 ,  H01J2201/3048

    摘要： A microelectromechanical system (MEMS) assembly includes at least one emission source; a top wafer having a plurality of side walls and a generally horizontal portion, the horizontal portion having a thickness between a first side and a directly opposed second side, at least one window in the horizontal portion extending between the first and second sides and a transmission membrane across the at least one window; and a bottom wafer having a first portion with a first substantially planar surface, an intermediate surface directly opposed to the first substantially planar surface, a second portion with a second substantially planar surface, the at least one emission source provided on the second substantially planar surface; where the top wafer bonds to the bottom wafer at the intermediate surface and encloses a cavity within the top wafer and the bottom wafer.

    摘要翻译： 微机电系统（MEMS）组件包括至少一个发射源; 具有多个侧壁和大致水平部分的顶部晶片，所述水平部分具有在第一侧和直接相对的第二侧之间的厚度，所述水平部分中的至少一个窗口在所述第一侧和第二侧之间延伸， 膜穿过至少一个窗口; 以及底部晶片，其具有第一部分和第二基本上平坦的表面，与所述第一基本上平坦的表面直接相对的中间表面，具有第二基本平坦表面的第二部分，所述至少一个发射源设置在所述第二基本上平坦的表面上 ; 其中顶部晶片在中间表面处接合到底部晶片并且在顶部晶片和底部晶片内包围空腔。

    Particle sources and methods for manufacturing the same
    9.
    发明授权
    Particle sources and methods for manufacturing the same 有权
    粒子来源及其制造方法

    公开(公告)号：US09017562B2

    公开(公告)日：2015-04-28

    申请号：US13726971

    申请日：2012-12-26

    申请人： 38th Research Institute, China Electronics Technology Group Corporation

    发明人： Huarong Liu

    IPC分类号： C25F3/00 ,  C03C15/00 ,  C23F4/02 ,  H01J1/00 ,  H01J1/304 ,  H01J9/02 ,  H01J37/04 ,  H01J37/06 ,  H01J37/08 ,  B82Y99/00 ,  H01J27/26 ,  H01J37/073

    CPC分类号： C23F4/02 ,  B82Y99/00 ,  H01J1/00 ,  H01J1/3044 ,  H01J9/025 ,  H01J27/26 ,  H01J37/04 ,  H01J37/06 ,  H01J37/073 ,  H01J37/08 ,  H01J2201/30415 ,  H01J2237/0807

    摘要： The present disclosure provides a method for manufacturing a particle source, comprising: placing a metal wire in vacuum, introducing active gas and catalyst gas, adjusting a temperature of the metal wire, and applying a positive high voltage V to the metal wire to dissociate the active gas at the surface of the metal wire, in order to generate at a peripheral surface of the head of the metal wire an etching zone in which field induced chemical etching (FICE) is performed; increasing by the FICE a surface electric field at the top of the metal wire head to be greater than the to evaporation field of the material for the metal wire, so that metal atoms at the wire apex are evaporated off; after the field evaporation is activated by the FICE, causing mutual adjustment between the FICE and the field evaporation, until the head of the metal wire has a shape of combination of a base and a tip on the base; and stopping the FICE and the field evaporation when the head of the metal wire takes a predetermine shape.

    摘要翻译： 本公开提供了一种制造颗粒源的方法，包括：将金属丝放置在真空中，引入活性气体和催化剂气体，调节金属丝的温度，以及向金属丝施加正高电压V以使 在金属线的表面处的活性气体，以在金属线的头部的外周表面上产生进行场诱导化学蚀刻（FICE）的蚀刻区域; 通过FICE增加金属丝头顶部的表面电场大于金属线材料的蒸发场，使金属丝顶端的金属原子蒸发掉; 在通过FICE激活场蒸发之后，引起FICE和场蒸发之间的相互调节，直到金属丝的头部具有基部和底部的尖端的组合的形状; 并且当金属丝的头部具有预定形状时，停止FICE和场蒸发。

    PARTICLE SOURCES AND METHODS FOR MANUFACTURING THE SAME
    10.
    发明申请
    PARTICLE SOURCES AND METHODS FOR MANUFACTURING THE SAME 有权
    颗粒源及其制造方法

    公开(公告)号：US20130112138A1

    公开(公告)日：2013-05-09

    申请号：US13726971

    申请日：2012-12-26

    申请人： 38th Research Institute, China Electronics Technology Group Corporation

    发明人： Huarong LIU

    IPC分类号： C23F4/02 ,  H01J1/00

    CPC分类号： C23F4/02 ,  B82Y99/00 ,  H01J1/00 ,  H01J1/3044 ,  H01J9/025 ,  H01J27/26 ,  H01J37/04 ,  H01J37/06 ,  H01J37/073 ,  H01J37/08 ,  H01J2201/30415 ,  H01J2237/0807

    摘要： The present disclosure provides a method for manufacturing a particle source, comprising: placing a metal wire in vacuum, introducing active gas and catalyst gas, adjusting a temperature of the metal wire, and applying a positive high voltage V to the metal wire to dissociate the active gas at the surface of the metal wire, in order to generate at a peripheral surface of the head of the metal wire an etching zone in which field induced chemical etching (FICE) is performed; increasing by the FICE a surface electric field at the top of the metal wire head to be greater than the to evaporation field of the material for the metal wire, so that metal atoms at the wire apex are evaporated off; after the field evaporation is activated by the FICE, causing mutual adjustment between the FICE and the field evaporation, until the head of the metal wire has a shape of combination of a base and a tip on the base; and stopping the FICE and the field evaporation when the head of the metal wire takes a predetermine shape.

    摘要翻译： 本公开提供了一种制造颗粒源的方法，包括：将金属丝放置在真空中，引入活性气体和催化剂气体，调节金属丝的温度，以及向金属丝施加正高电压V以使 在金属线的表面处的活性气体，以在金属线的头部的外周表面上产生进行场诱导化学蚀刻（FICE）的蚀刻区域; 通过FICE增加金属丝头顶部的表面电场大于金属线材料的蒸发场，使金属丝顶端的金属原子蒸发掉; 在通过FICE激活场蒸发之后，引起FICE和场蒸发之间的相互调节，直到金属丝的头部具有基部和底部的尖端的组合的形状; 并且当金属丝的头部具有预定形状时，停止FICE和场蒸发。