Abstract:
This invention provides a thick-film type dielectric with desired adhesivity to the base and very good insulation properties. The dielectric of the present invention includes a lower dielectric layer made of a photosensitive composition and an upper dielectric layer which is made of a photosensitive composition and formed on the aforementioned lower dielectric layer. The softening point (T1) of the primary glass powder used for the aforementioned lower dielectric layer, the softening point (T2) of the primary glass powder used for the aforementioned upper dielectric layer, and the firing temperature (T3) of the aforementioned primary glass powder satisfy the following relationship: T1
Abstract:
The disclosure relates to a method for making field emission cathode. A microchannel plate is provided. The microchannel plate includes a first surface and a second surface opposite to the first surface. The microchannel plate defines a number of holes extending through the microchannel plate from the first surface to the second surface. The plurality of holes are filled with a carbon nanotube slurry. The carbon nanotube slurry is adhered on inner walls of the plurality of holes. The carbon nanotube slurry in the plurality of holes is solidified.
Abstract:
The disclosure relates to a method for making field emission cathode. A microchannel plate is provided. The microchannel plate includes a first surface and a second surface opposite to the first surface. The microchannel plate defines a number of holes extending through the microchannel plate from the first surface to the second surface. The plurality of holes are filled with a carbon nanotube slurry. The carbon nanotube slurry is adhered on inner walls of the plurality of holes. The carbon nanotube slurry in the plurality of holes is solidified.
Abstract:
A field emission device includes a substrate and a plurality of wires embedded in the substrate. The plurality of wires has at least a field emitter cathode wire; a control grid wire array; and a collector anode array. The field emitter cathode wire, control grid wire array, and collector anode array are embedded in and extend through a nonconductive substrate matrix. A method for making a vacuum field emission device is also disclosed.
Abstract:
The disclosure relates to a field emission cathode. The field emission cathode includes a microchannel plate, a cathode electrode and a number of cathode emitters. The microchannel plate is an insulative plate and includes a first surface and a second surface opposite to the first surface. The microchannel plate defines a number of holes extending through the microchannel plate from the first surface to the second surface. The cathode electrode is located on the first surface. The number of cathode emitters are filled in the number of holes and electrically connected with the cathode electrode.
Abstract:
The disclosure relates to a field emission cathode. The field emission cathode includes a microchannel plate, a cathode electrode and a number of cathode emitters. The microchannel plate is an insulative plate and includes a first surface and a second surface opposite to the first surface. The microchannel plate defines a number of holes extending through the microchannel plate from the first surface to the second surface. The cathode electrode is located on the first surface. The number of cathode emitters are filled in the number of holes and electrically connected with the cathode electrode.
Abstract:
This invention provides a thick-film type dielectric with desired adhesivity to the base and very good insulation properties. The dielectric of the present invention includes a lower dielectric layer made of a photosensitive composition and an upper dielectric layer which is made of a photosensitive composition and formed on the aforementioned lower dielectric layer. The softening point (T1) of the primary glass powder used for the aforementioned lower dielectric layer, the softening point (T2) of the primary glass powder used for the aforementioned upper dielectric layer, and the firing temperature (T3) of the aforementioned primary glass powder satisfy the following relationship: T1