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    Method for making heterojunction bipolar mixer circuitry
    1.
    发明授权
    Method for making heterojunction bipolar mixer circuitry 失效
    制造异质结双极混频器电路的方法

    公开(公告)号：US5837589A

    公开(公告)日：1998-11-17

    申请号：US774237

    申请日：1996-12-27

    申请人： Brian J. McNamara ,  John P. Wendler ,  Kamal Tabatabaie-Alavi

    发明人： Brian J. McNamara ,  John P. Wendler ,  Kamal Tabatabaie-Alavi

    IPC分类号： H01L27/06 ,  H03D7/02 ,  H01L21/331

    CPC分类号： H03D7/02 ,  H01L27/0605

    摘要： Mixer circuitry having a semiconductor body formed therein mixer circuitry having an oscillator having a heterojunction bipolar transistor and a mixer having a Schottky diode. The heterojunction transistor has a collector region formed in one portion of doped layer of the semiconductor body and the diode has a metal electrode is Schottky contact with another portion of such doped layer. The mixer is includes a diode and a DC biasing circuit, comprising a constant current, for biasing such diode to predetermined operating point substantially invariant with power of an input signal fed to such mixer.

    摘要翻译： 具有形成在其中的混合器电路的混合器电路具有具有异质结双极晶体管的振荡器和具有肖特基二极管的混频器。 异质结晶体管具有形成在半导体本体的掺杂层的一部分中的集电极区域，并且二极管具有金属电极与该掺杂层的另一部分肖特基接触。 混频器包括二极管和直流偏置电路，其包括恒定电流，用于将馈电到这种混频器的输入信号的功率基本上不变地偏置到预定工作点。

    Heterojunction bipolar transistor
    5.
    发明授权
    Heterojunction bipolar transistor 失效
    异质结双极晶体管

    公开(公告)号：US5986324A

    公开(公告)日：1999-11-16

    申请号：US827851

    申请日：1997-04-11

    申请人： Michael G. Adlerstein ,  Mark P. Zaitlin ,  Kamal Tabatabaie-Alavi

    发明人： Michael G. Adlerstein ,  Mark P. Zaitlin ,  Kamal Tabatabaie-Alavi

    IPC分类号： H01L27/06 ,  H01L29/737 ,  H01L27/082 ,  H01L29/70

    CPC分类号： H01L29/7371 ,  H01L27/0605

    摘要： A bipolar transistor having a pair of transistor cells formed on a single crystal substrate. Each one of the cells including a collector electrode, an elongated emitter electrode and a base electrode disposed over a first surface of the substrate. The base electrode is adapted to control a flow of carriers between the collector and emitter electrodes. An emitter pad is disposed over the first surface of the substrate. A pair of conductive, air-bridge members is provided. First ends of the bridge members are connected to the emitter pad and second ends of the bridge members are connected along a length of the elongated emitter electrode. The substrate has an emitter contact disposed on a second surface of the substrate. The emitter pad and the emitter contact are electrically connected by an electrically conductive via passing through the substrate between the first and second surfaces of the substrate. The emitter pad comprises a resistive layer disposed serially between the pair of bridges and the emitter contact. The emitter pad includes: a resistive layer disposed over the first surface of the substrate and having an inner portion in electrical contact with the electrically conductive via; a dielectric layer disposed over an inner region of the resistive layer; and a pair of electrical contacts, an outer portion of each of the electrical contacts being disposed in electrical contact with outer portions of the resistive layer and inner portions of the pair of electrical contacts being electrically insulated from the resistive layer.

    摘要翻译： 一种具有在单晶衬底上形成的一对晶体管单元的双极晶体管。 每个单元包括集电极，细长的发射极和设置在基板的第一表面上的基极。 基极适于控制集电极和发射极之间的载流子流。 发射极焊盘设置在衬底的第一表面上。 提供一对导电的气桥构件。 桥构件的第一端连接到发射极焊盘，并且桥构件的第二端沿着细长的发射极电极的长度连接。 衬底具有布置在衬底的第二表面上的发射极触点。 发射极焊盘和发射极触点通过在衬底的第一和第二表面之间穿过衬底的导电通孔电连接。 发射极焊盘包括串联地布置在一对桥和发射极触点之间的电阻层。 发射极焊盘包括：电阻层，设置在衬底的第一表面之上并具有与导电通孔电接触的内部; 设置在所述电阻层的内部区域上的电介质层; 和一对电触头，每个电触头的外部部分设置成与电阻层的外部部分电接触，并且该对电触头的内部部分与电阻层电绝缘。