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公开(公告)号：US11623321B2
公开(公告)日：2023-04-11
申请号：US17087941
申请日：2020-11-03
发明人： Andrew Nagengast , Steven M. Zuniga , Jay Gurusamy
IPC分类号： B24B37/32 , B24B49/16 , B24B37/005 , H01L21/306
摘要： Embodiments of the present disclosure generally relate to chemical mechanical polishing (CMP) systems used in the manufacturing of semiconductor devices. In one embodiment, the apparatus includes a polishing module, a retaining ring, wherein the retaining ring includes a protrusion on a radially outward edge, and a plurality of load pins disposed through the retaining ring.
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公开(公告)号：US11618123B2
公开(公告)日：2023-04-04
申请号：US17072870
申请日：2020-10-16
申请人： EBARA CORPORATION
发明人： Yu Ishii , Tetsuji Togawa , Atsushi Yoshida
IPC分类号： B24B37/005 , B24B49/16
摘要： A polishing method capable of accurately determining a polishing end point of a substrate is disclosed. The method comprises: rotating a polishing table supporting a polishing pad; and polishing the substrate by pressing the substrate against a polishing surface of the polishing pad by a polishing head, wherein polishing the substrate includes: an oscillation polishing process of polishing the substrate while causing the polishing head to oscillate along the polishing surface; and a static polishing process of polishing the substrate with the oscillation of the polishing head stopped, the static polishing process is performed after the oscillation polishing process, and the static polishing process comprises determining a static polishing end point which is a point in time at which a rate of change of torque for rotating the polishing table has reached a change-rate threshold value.
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公开(公告)号：US11548113B2
公开(公告)日：2023-01-10
申请号：US16386681
申请日：2019-04-17
申请人： EBARA CORPORATION
IPC分类号： B24B49/08 , B24B49/16 , B24B37/005 , B24B37/34 , B24B37/20 , B24B37/30 , B24B37/04 , B24B49/10 , B24B49/12 , B24B41/00 , B24B37/32
摘要： A polishing method is used for polishing a substrate such as a semiconductor wafer to a flat mirror finish. A method of polishing a substrate by a polishing apparatus includes a polishing table (100) having a polishing surface, a top ring (1) for holding a substrate and pressing the substrate against the polishing surface, and a vertically movable mechanism (24) for moving the top ring (1) in a vertical direction. The top ring (1) is moved to a first height before the substrate is pressed against the polishing surface, and then the top ring (1) is moved to a second height after the substrate is pressed against the polishing surface.
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公开(公告)号：US11511389B2
公开(公告)日：2022-11-29
申请号：US16575844
申请日：2019-09-19
申请人： EBARA CORPORATION
发明人： Kenichi Akazawa , Makoto Kashiwagi , Yu Ishii , Atsushi Yoshida , Kenichi Kobayashi , Tetsuji Togawa , Hozumi Yasuda
摘要： Disclosed is a polishing head for a polishing apparatus for polishing a quadrangular substrate using a polishing pad attached to a polishing table, comprising a head body portion, a plurality of elastic bags disposed in a surface of the head body portion, which is to face the polishing table, and a substrate holding plate for holding the substrate, the substrate holding plate being pressed by the elastic bags in a direction away from the head body portion, the head body portion being provided with channels for bags, which are in communication with the respective elastic bags, the polishing head further including at least two support plates disposed between the elastic bags on one hand and the substrate holding plate on the other, the elastic bags being configured to press the substrate holding plate through the support plates.
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公开(公告)号：US20220371153A1
公开(公告)日：2022-11-24
申请号：US17680779
申请日：2022-02-25
申请人： EBARA CORPORATION
发明人： Toshimitsu Sasaki , Keita Yagi , Yoichi Shiokawa
摘要： A polishing apparatus capable of obtaining a desired film thickness profile is disclosed. The polishing apparatus includes: a polishing unit; a film thickness measuring device for measuring a film thickness profile of a substrate; and a controller for controlling at least operations of the polishing unit and the film thickness measuring device. The controller stores in advance a response model which is created by taking into consideration variation in an amount of polishing between monitored areas of the substrate due to variations in a pressure of a pressurized fluid supplied to each of pressure chambers. Further, the controller obtains a film thickness profile of the substrate before polishing by use of a film thickness measuring device, and causes the substrate to be polished with an optimized polishing recipe created based on the response model and a target polishing amount, which is a difference between the film thickness profile of the substrate before polishing and the target film thickness of the substrate. A next substrate is polished with a new optimized polishing recipe which is created based on a target polishing amount of the next substrate and a response model corrected by use of the optimized polishing recipe and film thickness profiles of the substrate before and after polishing.
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公开(公告)号：US20220305616A1
公开(公告)日：2022-09-29
申请号：US17595794
申请日：2020-05-11
申请人： Robert Bosch GmbH
发明人： Wolfgang Pleuger , Thorsten Klein , Thomas Kipfer , Johannes Fischer , Matthias Amann , Helena Kuppke
摘要： A method determines state information relating to a belt grinder. The belt grinder has at least one abrasive belt for grinding a workpiece. The method includes providing measurement data relating to the belt grinder, and determining the state information from the measurement data using a machine learning system. The machine learning system is configured to determine the state information based on the provided measurement data.
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公开(公告)号：US20220152780A1
公开(公告)日：2022-05-19
申请号：US17522191
申请日：2021-11-09
发明人： Yuichi DOUKI , Kouzou KANAGAWA , Junichi KITANO
IPC分类号： B24B49/16 , B24B57/02 , B24B37/015 , B24B37/27
摘要： A substrate processing apparatus includes: a cassette block configured to mount a cassette that accommodates a substrate; a processing block configured to process the substrate; a relay block configured to relay the substrate between the cassette block and the processing block; and a controller. The processing block includes a processing module that performs a removal process of removing a part of the substrate. The relay block includes a weight measuring unit that measures a weight of the substrate before or after being processed by the processing block. The controller includes a removal amount determination unit that calculates a weight difference of the substrate before and after being processed by the processing block using the measurement result of the weight measuring unit and determines whether a removal amount by the removal process is within a permissible range.
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公开(公告)号：US11325224B2
公开(公告)日：2022-05-10
申请号：US16861729
申请日：2020-04-29
申请人： EBARA CORPORATION
发明人： Hiroyuki Shinozaki
摘要： A method of monitoring dressing of a polishing pad is provided. The method includes: rotating a polishing table that supports the polishing pad; dressing the polishing pad by pressing a dresser against the polishing pad while causing the dresser to oscillate in a radial direction of the polishing pad; calculating a work coefficient representing a ratio of a frictional force between the dresser and the polishing pad to a force of pressing the dresser against the polishing pad; and monitoring dressing of the polishing pad based on the work coefficient.
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公开(公告)号：US11260496B2
公开(公告)日：2022-03-01
申请号：US16166946
申请日：2018-10-22
申请人： EBARA CORPORATION
发明人： Keita Yagi , Yuki Watanabe , Toshimitsu Sasaki
IPC分类号： B24B37/013 , B24B49/16 , B24B49/10 , B24B37/04
摘要： A polishing method which can acquire an actual position of a film-thickness measurement point, and can therefore apply an optimum polishing pressure to a substrate such as a wafer is disclosed. The method includes: causing a substrate detection sensor to generate substrate detection signals in a preset cycle and causing a film-thickness sensor to generate a film-thickness signal at a predetermined measurement point during polishing of the substrate while the substrate detection sensor and the film-thickness sensor are moving across the surface of the substrate; calculating an angle of eccentricity of a center of the substrate relative to a center of the polishing head from the number of substrate detection signals; correcting a position of the predetermined measurement point based on the angle of eccentricity; and controlling polishing pressure at which the polishing head presses the substrate based on the film-thickness signal and the corrected position of the predetermined measurement point.
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公开(公告)号：US11052509B2
公开(公告)日：2021-07-06
申请号：US16388455
申请日：2019-04-18
发明人： Brian Vik
摘要： A method for manufacturing a face seal may generally include positioning a machining device relative to the face seal such that the face seal is compressed between a machining surface of the machining device and a support member on which the face seal is supported. In addition, the method may include removing material from a seal flange of the face seal using the machining device while the face seal remains compressed between the machining device and the support member and monitoring a compressive load applied through the face seal as material is being removed from the seal flange. Moreover, the method may include adjusting the operation of the machining device to prevent further removal of material from the seal flange when the monitored compressive load is equal to a predetermined load setting.
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