公开(公告)号：US20190284055A1

公开(公告)日：2019-09-19

申请号：US16331161

申请日：2017-09-15

申请人： DOW SILICONES CORPORATION

发明人： Brian D. REKKEN

IPC分类号： C01B33/107 ,  C01B21/088 ,  C23C16/30 ,  C23C16/50 ,  C23C16/455 ,  C07F7/08

摘要： A SiH-free vinyldisilane compound, which is free of (lacks) a silicon-bonded hydrogen atom. The use of the SiH-free vinyldisilane compound, or a collection of such compounds, as a starting material or precursor for synthesizing or making silicon-heteroatom compounds. The silicon-heteroatom compounds synthesized therefrom; films of and devices containing the silicon-heteroatom compounds; methods of making the SiH-free vinyldisilane compound, silicon-heteroatom compounds, films, and devices; and uses of the SiH-free vinyldisilanes, silicon-heteroatom compounds, films, and devices.

公开(公告)号：US07608235B2

公开(公告)日：2009-10-27

申请号：US11572938

申请日：2005-08-03

申请人： Akimasa Tasaka ,  Masashi Kodama ,  Udai Tanaka ,  Hitoshi Takebayashi ,  Tetsuro Tojo ,  Atsuhisa Mimoto

发明人： Akimasa Tasaka ,  Masashi Kodama ,  Udai Tanaka ,  Hitoshi Takebayashi ,  Tetsuro Tojo ,  Atsuhisa Mimoto

IPC分类号： C01B21/088 ,  C25B1/24 ,  C25B1/00

CPC分类号： C25B1/245 ,  C25B11/14

摘要： A carbon electrode for producing gaseous nitrogen trifluoride comprising a dense texture with an average pore size of 0.5 μm or less is provided. The carbon electrode contains a carbonaceous material, and 3 to 10 wt % of at least one selected from magnesium fluoride and aluminum fluoride which have a melting point not lower than the baking temperature of the carbonaceous material.

摘要翻译： 提供了一种用于生产气态三氟化氮的碳电极，其包含平均孔径为0.5μm或更小的致密结构。 碳电极含有碳质材料，并且具有熔点不低于碳质材料的烧成温度的3〜10重量％的选自氟化镁和氟化铝的至少一种。

公开(公告)号：US11699584B2

公开(公告)日：2023-07-11

申请号：US17197895

申请日：2021-03-10

申请人： L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude

发明人： Jean-Marc Girard ,  Peng Zhang ,  Antonio Sanchez ,  Manish Khandelwal ,  Gennadiy Itov ,  Reno Pesaresi

IPC分类号： H01L21/02 ,  C07F7/02 ,  C01B21/087 ,  C01B21/088 ,  C23C16/30 ,  C23C16/34 ,  C23C16/40 ,  C23C16/455 ,  C23C16/515

CPC分类号： H01L21/0228 ,  C01B21/087 ,  C01B21/088 ,  C07F7/025 ,  C23C16/308 ,  C23C16/345 ,  C23C16/402 ,  C23C16/45525 ,  C23C16/45553 ,  C23C16/515 ,  H01L21/02222 ,  H01L21/02164

摘要： Methods are disclosed for forming a Silicon Metal Oxide film using a mono-substituted TSA precursor. The precursors have the formula: (SiH3)2N—SiH2-X, wherein X is selected from a halogen atom; an isocyanato group; an amino group; an N-containing C4-C10 saturated or unsaturated heterocycle; or an alkoxy group.

公开(公告)号：US4591493A

公开(公告)日：1986-05-27

申请号：US714957

申请日：1985-03-22

申请人： Hubertus Klima ,  Herbert Jekat

发明人： Hubertus Klima ,  Herbert Jekat

IPC分类号： C07D251/28 ,  C01B21/088

CPC分类号： C07D251/28

摘要： The present invention provides a process for obtaining solid cyanuric chloride from a cyanuric chloride vapor obtained by the trimerization of cyanogen chloride, wherein the cyanuric chloride vapor is introduced into the upper part of a separation chamber in the center of many individual cold inert gas streams, the solid cyanuric chloride, after emergence thereof from the separation chamber, is separated from the inert gas stream by the action of centrifugal and gravitational force and the inert gas, together with a residual content of very finely crystalline cyanuric chloride, is returned, after cooling thereof, as part streams to the separation chamber.

摘要翻译： 本发明提供一种通过氯氰化物三聚获得的氰尿酰氯蒸气获得固体氰尿酰氯的方法，其中将氰尿酰氯蒸气引入许多单个冷惰性气体流中心的分离室的上部， 固体氰尿酰氯在从分离室出来后，通过离心和重力的作用与惰性气体流分离，惰性气体以及非常细微结晶的氰尿酰氯的残留含量在冷却后返回 作为分离室的部分流。

公开(公告)号：US4160811A

公开(公告)日：1979-07-10

申请号：US879634

申请日：1978-02-21

申请人： Joseph A. Neff ,  William D. English

发明人： Joseph A. Neff ,  William D. English

IPC分类号： C01B21/088 ,  C01B35/06 ,  C01C1/16

CPC分类号： C01B35/06 ,  C01B21/088

摘要： The compound NF.sub.4 MF.sub.6 where M is a Group V metalloid is reacted with a fluoride of sodium to yield tetrafluorammonium bifluoride in solution with hydrogen fluoride and a precipitate of the formula NaMF.sub.6. The preferred metaloid is antimony. The formed tetrafluorammonium bifluoride may be converted to NF.sub.4 BF.sub.4 by reaction with BF.sub.3.

摘要翻译： 其中M是第V族准金属的化合物NF4MF6与钠的氟化物反应，在氟化氢和式NaMF 6的沉淀物的溶液中产生四氟化铵二氟化物。 优选的金属络合物是锑。 形成的氟化四氟铵可以通过与BF 3反应转化成NF4BF4。

公开(公告)号：US10734664B1

公开(公告)日：2020-08-04

申请号：US16570131

申请日：2019-09-13

申请人： SES Holdings Pte. Ltd.

发明人： Rajendra P. Singh ,  Qichao Hu

IPC分类号： H01M8/103 ,  C01B21/088 ,  H01M10/0525 ,  C08L79/08 ,  H01M10/0565

摘要： A method of removing one or more target impurities from crude hydrogen bis(fluorosulfonyl)imide (HFSI) using a crystallization technique. In some embodiments, the method includes contacting the crude HFSI with at least one anhydrous solvent to create a solution. The solution is caused to have a temperature sufficient to cause HFSI in the solution to crystalize while the one or more impurities remain dissolved in the mother liquor of the solution. The crystalized HFSI and the mother liquor containing the one or more impurities are separated to obtained a purified HFSI product. Purified HFSI products are also disclosed, as are systems, such as secondary batteries, incorporating purified HFSI products.

公开(公告)号：US20190311894A1

公开(公告)日：2019-10-10

申请号：US16449070

申请日：2019-06-21

申请人： L'Air Liquide, Société Anonyme pour I'Etude et I'Exploitation des Procédés Georges Claude

发明人： Jean-Marc GIRARD ,  Peng Zhang ,  Antonio Sanchez ,  Manish Khandelwal ,  Gennadiy Itov ,  Reno Pesaresi ,  Grigory Nikiforov ,  David Orban

IPC分类号： H01L21/02 ,  C01B21/088 ,  C23C16/455 ,  C23C16/515 ,  C07F7/02 ,  C23C16/40 ,  C23C16/34 ,  C23C16/30 ,  C01B21/087

摘要： Methods for halogenation of a hydrosilazane include contacting the hydrosilazane with a halogenating agent in a liquid phase to produce the halosilazane having a formula (SiHa(NR2)bXc)(n+2)Nn(SiH(2−d)Xd)(n−1), wherein each a, b, c is independently 0 to 3; a+b+c=3; d is 0 to 2 and n≥1; wherein X is selected from a halogen atom selected from F, Cl, Br or I; each R is selected from H, a C1-C6 linear or branched, saturated or unsaturated hydrocarbyl group, or a silyl group [SiR′3]; further wherein each R′ of the [SiR′3] is independently selected from H, a halogen atom selected from F, Cl, Br or I, a C1-C4 saturated or unsaturated hydrocarbyl group, a C1-C4 saturated or unsaturated alkoxy group, or an amino group [—NR1R2] with each R1 and R2 being further selected from H or a C1-C6 linear or branched, saturated or unsaturated hydrocarbyl group.

公开(公告)号：US20180022761A1

公开(公告)日：2018-01-25

申请号：US15692544

申请日：2017-08-31

申请人： L'Air Liquide, Société Anonyme pour I'Etude et l'Exploitation des Procédés Georges Claude

发明人： Jean-Marc GIRARD ,  Peng ZHANG ,  Antonio SANCHEZ ,  Manish KHANDELWAL ,  Gennediy ITOV ,  Reno PESARESI

IPC分类号： C07F7/02 ,  C01B21/087 ,  C23C16/515 ,  C23C16/34 ,  C23C16/40 ,  C23C16/455 ,  C01B21/088 ,  C23C16/30

CPC分类号： H01L21/0228 ,  C01B21/087 ,  C01B21/088 ,  C07F7/025 ,  C23C16/308 ,  C23C16/345 ,  C23C16/402 ,  C23C16/45553 ,  C23C16/515 ,  H01L21/02164 ,  H01L21/02222

摘要： Mono-substituted TSA precursor Si-containing film forming compositions are disclosed. The precursors have the formula: (SiH3)2N—SiH2—X, wherein X is selected from a halogen atom; an isocyanato group; an amino group; an N-containing C4-C10 saturated or unsaturated heterocycle; or an alkoxy group. Methods for forming the Si-containing film using the disclosed mono-substituted TSA precursor are also disclosed.

公开(公告)号：US11485642B2

公开(公告)日：2022-11-01

申请号：US16331161

申请日：2017-09-15

申请人： DOW SILICONES CORPORATION

发明人： Brian D. Rekken

IPC分类号： C01B33/107 ,  C01B21/088 ,  C07F7/08 ,  C23C16/30 ,  C23C16/455 ,  C23C16/50

摘要： A SiH-free vinyldisilane compound, which is free of (lacks) a silicon-bonded hydrogen atom. The use of the SiH-free vinyldisilane compound, or a collection of such compounds, as a starting material or precursor for synthesizing or making silicon-heteroatom compounds. The silicon-heteroatom compounds synthesized therefrom; films of and devices containing the silicon-heteroatom compounds; methods of making the SiH-free vinyldisilane compound, silicon-heteroatom compounds, films, and devices; and uses of the SiH-free vinyldisilanes, silicon-heteroatom compounds, films, and devices.

公开(公告)号：US20210395890A1

公开(公告)日：2021-12-23

申请号：US17409229

申请日：2021-08-23

申请人： L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude

发明人： Jean-Marc GIRARD ,  Peng ZHANG ,  Antonio SANCHEZ ,  Manish KHANDELWAL ,  Gennadiy ITOV ,  Reno PESARESI ,  Grigory NIKIFOROV ,  David ORBAN

IPC分类号： C23C16/455 ,  H01L21/02 ,  C01B21/088 ,  C23C16/515 ,  C23C16/40 ,  C23C16/34 ,  C23C16/30 ,  C01B21/087 ,  C07F7/02

摘要： Methods for producing halosilazane comprise halogenating a hydrosilazane with a halogenating agent to produce the halosilazane, the halosilazane having a formula (SiHa(NR2)bXc)(n+2)Nn(SiH(2−d)Xd)(n−1), wherein each a, b, c is independently 0 to 3; a+b+c=3; d is 0 to 2 and n≥1; wherein X is selected from a halogen atom selected from F, Cl, Br or I; each R is selected from H, a C1-C6 linear or branched, saturated or unsaturated hydrocarbyl group, or a silyl group [SiR′3]; further wherein each R′ of the [SiR′3] is independently selected from H, a halogen atom selected from F, Cl, Br or I, a C1-C4 saturated or unsaturated hydrocarbyl group, a C1-C4 saturated or unsaturated alkoxy group, or an amino group [—NR1R2] with each R1 and R2 being further selected from H or a C1-C6 linear or branched, saturated or unsaturated hydrocarbyl group, provided that when c=0, d≠0; or d=0, c≠0.