公开(公告)号：US3573088A

公开(公告)日：1971-03-30

申请号：US3573088D

申请日：1967-07-27

申请人： BELL TELEPHONE LABOR INC

发明人： MACCHESNEY JOHN B ,  POTTER JOHN F

IPC分类号： C01G31/02 ,  C04B41/50 ,  C04B41/87 ,  H01C17/14 ,  C23F7/02

CPC分类号： C04B41/009 ,  C01G31/02 ,  C01P2006/40 ,  C04B41/5025 ,  C04B41/87 ,  H01C17/14 ,  C04B41/4519 ,  C04B41/455 ,  C04B35/10

摘要： VANADIUM PENTOXIDE CAN BE ANNEALED TO STABLE VANADIUM DIOXIDE AT TEMPERATURES FROM 400 TO 1200*C. UNDER AN ATOMSPHERE HAVING AN OXYGEN PARTIAL PRESSURE FROM AN ATMOSPHERE HAVING AN OXYGEN PARTIAL PRESSURE FROM 10-4 TO 10-28 ATMOSPHERES. THIS TECHNIQUE IS APPLICABLE ON VANDAIUM PENTOXIDE FILMS PRODUCED BY EVAPORATING VANADYL TRICHLORIDE INTO CARBON DIOXIDE IN THE PRESENCE OF A SUBSTRATE, OR ON FILMS PRODUCED BY THE PHYSICAL APPLICATION OF ALREADY FORMED VANADIUM PENTOXIDE ONTO CERAMIC SUBSTRATES.

公开(公告)号：US3019137A

公开(公告)日：1962-01-30

申请号：US63641057

申请日：1957-01-25

申请人： ELECTRONIQUE & AUTOMATISME SA

发明人： NOEL HANIET JACQUES MARIE

IPC分类号： C23C16/34 ,  C23C16/40 ,  H01B1/00 ,  H01C7/00 ,  H01C17/14

CPC分类号： H01C17/14 ,  C23C16/34 ,  C23C16/40 ,  C23C16/401 ,  C23C16/405 ,  H01B1/00 ,  H01C7/006 ,  Y10T428/265

公开(公告)号：US2552626A

公开(公告)日：1951-05-15

申请号：US888448

申请日：1948-02-17

申请人： BELL TELEPHONE LABOR INC

发明人： FISHER JOSEPH R ,  TEAL GORDON K

IPC分类号： H01C17/14

CPC分类号： H01C17/14 ,  Y10T428/12611 ,  Y10T428/12674

公开(公告)号：US12034003B2

公开(公告)日：2024-07-09

申请号：US18141300

申请日：2023-04-28

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Hung-Chih Yu ,  Chien-Mao Chen

IPC分类号： H01L27/06 ,  H01C7/00 ,  H01C17/14 ,  H01L21/8238 ,  H01L27/01 ,  H01L49/02

CPC分类号： H01L27/0629 ,  H01C7/006 ,  H01C17/14 ,  H01L21/823878 ,  H01L27/016 ,  H01L28/24 ,  H01L21/823842

摘要： A semiconductor device includes: a metal thin film disposed on a semiconductor substrate; and first and second contact structures disposed on the metal thin film, wherein the first and second contact structures are laterally spaced from each other by a dummy layer that comprises at least one polishing resistance material.

公开(公告)号：US4042006A

公开(公告)日：1977-08-16

申请号：US624711

申请日：1975-10-22

申请人： Alfred Engl ,  Guenther Heim

发明人： Alfred Engl ,  Guenther Heim

IPC分类号： H01C17/14 ,  H01C17/20 ,  B22D23/00 ,  B05D3/02 ,  B05D3/06

CPC分类号： H01C17/14 ,  H01C17/20

摘要： A band-shaped metal layer useful as a resistance layer and/or a contact layer is pyrolytically deposited onto a cylindrical substrate by surrounding the surface of the substrate with a mixture of a thermally decomposable metal compound and a carrier therefor and substantially simultaneously heating only precise surface areas of the substrate, as by a laser beam, to a temperature slightly above the thermal decomposition temperature of the metal compound and moving the substrate in a rotational and/or axial manner so that a band-shaped metal layer forms only at the heated surface areas of the substrate.

摘要翻译： 用作电阻层和/或接触层的带状金属层通过用可热分解的金属化合物和载体的混合物围绕基板的表面而被热解沉积到圆柱形基板上，并且基本上同时加热仅精确 衬底的表面区域，如通过激光束，至稍高于金属化合物的热分解温度的温度，并以旋转和/或轴向移动衬底，使得带状金属层仅在加热 基材的表面积。

公开(公告)号：US2974064A

公开(公告)日：1961-03-07

申请号：US71846458

申请日：1958-03-03

申请人： MONSANTO CHEMICALS

发明人： WILLIAMS FORREST V ,  RUEHRWEIN ROBERT A ,  THERALD MOELLER

IPC分类号： C01B25/06 ,  C09K3/14 ,  C23C16/30 ,  C23C24/00 ,  H01C17/14 ,  H01L21/00

CPC分类号： C01B25/06 ,  C04B35/515 ,  C09K3/1409 ,  C23C16/30 ,  C23C24/00 ,  H01C17/14 ,  H01L21/00 ,  Y02T50/67

公开(公告)号：US2901381A

公开(公告)日：1959-08-25

申请号：US61564456

申请日：1956-10-12

申请人： BELL TELEPHONE LABOR INC

发明人： TEAL GORDON K

IPC分类号： H01C17/14

CPC分类号： H01C17/14

公开(公告)号：US20210013197A1

公开(公告)日：2021-01-14

申请号：US16939463

申请日：2020-07-27

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Hung-Chih YU ,  Chien-Mao Chen

IPC分类号： H01L27/06 ,  H01C17/14 ,  H01L21/8238 ,  H01L49/02 ,  H01L27/01 ,  H01C7/00

摘要： A semiconductor device includes: a metal thin film disposed on a semiconductor substrate; and first and second contact structures disposed on the metal thin film, wherein the first and second contact structures are laterally spaced from each other by a dummy layer that comprises at least one polishing resistance material.

公开(公告)号：US20190148361A1

公开(公告)日：2019-05-16

申请号：US15965878

申请日：2018-04-28

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Hung-Chih LU ,  Chien-Mao Chen

IPC分类号： H01L27/06 ,  H01C17/14 ,  H01C7/00 ,  H01L49/02 ,  H01L27/01 ,  H01L21/8238

摘要： A semiconductor device includes: a metal thin film disposed on a semiconductor substrate; and first and second contact structures disposed on the metal thin film, wherein the first and second contact structures are laterally spaced from each other by a dummy layer that comprises at least one polishing resistance material.

公开(公告)号：US4908599A

公开(公告)日：1990-03-13

申请号：US237665

申请日：1988-08-25

申请人： Brian E. Breen ,  Ian R. Harris

发明人： Brian E. Breen ,  Ian R. Harris

IPC分类号： G01K7/18 ,  H01C7/02 ,  H01C17/14 ,  H01C17/16 ,  H01C17/23 ,  H01C17/26

CPC分类号： H01C7/021 ,  H01C17/16 ,  H01C17/23 ,  H01C17/265 ,  Y10T29/49083

摘要： A temperature-sensitive resistance element comprises an alumina substrate having terminals and a sinuous temperature-sensitive resistance layer thereon. The layer and terminals are formed of electroplated palladium which has been recrystallized.

摘要翻译： 温度敏感电阻元件包括具有端子的氧化铝基板和其上的弯曲温度敏感电阻层。 层和端子由已经重结晶的电镀钯形成。