公开(公告)号：US20230345836A1

公开(公告)日：2023-10-26

申请号：US17886854

申请日：2022-08-12

申请人： Applied Materials, Inc.

发明人： Ming GAO ,  Lizhong SUN ,  Xiaodong YANG

IPC分类号： H01L41/319 ,  H01L41/316 ,  H01L41/08 ,  H01L41/083

CPC分类号： H01L41/319 ,  H01L41/316 ,  H01L41/0815 ,  H01L41/083

摘要： A method of reducing surface defects of a piezoelectric film layer includes depositing a first seed layer on a substrate, depositing an intermediate film layer on the first seed layer at a first temperature of approximately 350 degrees Celsius to approximately 700 degrees Celsius, depositing a second seed layer on the intermediate film layer, and depositing a piezoelectric film layer at a second temperature of less than 200 degrees Celsius. The piezoelectric film layer has a surface cone defect count of less than or equal to 2 per 100 microns2 of surface area of the piezoelectric film layer. In some embodiments, no vacuum breaks occur between depositions of the first seed layer, the intermediate film layer, the second seed layer, and the piezoelectric film layer.

公开(公告)号：US20230320227A1

公开(公告)日：2023-10-05

申请号：US17707078

申请日：2022-03-29

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

发明人： CHING-HUI LIN ,  FU-CHUN HUANG ,  CHUN-REN CHENG ,  WEI CHUN WANG ,  CHAO-HUNG CHU ,  YI-HSIEN CHANG ,  PO-CHEN YEH ,  CHI-YUAN SHIH ,  SHIH-FEN HUANG ,  YAN-JIE LIAO ,  SHENG KAI YEH

IPC分类号： H01L41/047 ,  H01L41/083 ,  H01L41/27 ,  H01G5/18

CPC分类号： H01L41/0477 ,  H01G5/18 ,  H01L41/27 ,  H01L41/083

摘要： A method for manufacturing a semiconductor structure is provided. The method may include several operations. A piezoelectric capacitor is formed over a substrate, wherein the piezoelectric capacitor includes a metal electrode. An intermediate layer is formed on the metal electrode, and is patterned using a first mask layer as a mask. A metal layer is formed on the intermediate layer, wherein the metal layer electrically connects to the metal electrode. The metal layer is patterned using a second mask layer, wherein the intermediate layer is within a coverage area of the metal layer from a top-view perspective after the patterning of the metal layer. A semiconductor structure thereof is also provided.

公开(公告)号：US20230320221A1

公开(公告)日：2023-10-05

申请号：US17932303

申请日：2022-09-15

申请人： SHENZHEN SHOKZ CO., LTD.

发明人： Guangyuan ZHU ,  Lei ZHANG ,  Xin QI

IPC分类号： H01L41/09 ,  H01L41/047 ,  H04R17/00 ,  H01L41/083

CPC分类号： H01L41/094 ,  H01L41/0472 ,  H04R17/00 ,  H01L41/083 ,  H04R2217/01

摘要： The embodiment of the present disclosure may disclose an acoustic device. The acoustic device may comprise a piezoelectric component, an electrode, and a vibration component. The piezoelectric component may generate vibration under an action of a driving voltage, the electrode may provide the driving voltage for the piezoelectric component, and the vibration component may be physically connected to the piezoelectric component to receive the vibration and generate sound. The piezoelectric component may include a substrate and a piezoelectric layer, the piezoelectric layer may be covered on a surface of the substrate, the electrode may be covered on a surface of the piezoelectric layer, and the coverage area of the electrode on the surface of the piezoelectric layer may be less than an area of the surface of the substrate covered with the piezoelectric layer. In the present disclosure, the modal actuator of the piezoelectric component may be formed through the electrode designing, so that the piezoelectric component may output a specific modal shape, and improves the acoustic characteristics of the acoustic device. Compared with the modal control system composed of different mechanical structures added in a specific region, the present disclosure realizes the modal control of the piezoelectric component through the electrode design, which may simplify the structure of the acoustic device.

公开(公告)号：US11678581B2

公开(公告)日：2023-06-13

申请号：US16647490

申请日：2018-09-11

申请人： TDK Corporation

发明人： Junichi Kimura

IPC分类号： H01L41/04 ,  H01L41/047 ,  H01L41/083 ,  H01L41/187

CPC分类号： H01L41/0478 ,  H01L41/083 ,  H01L41/187

摘要： Provided is a piezoelectric thin film device in which lattice mismatch between a piezoelectric thin film and a lower electrode layer (first electrode layer) is reduced. A piezoelectric thin film device 10 comprises a first electrode layer 6a and a piezoelectric thin film 2 laminated directly on the first electrode layer 6a; the first electrode layer 6a includes an alloy composed of two or more metal elements; the first electrode layer 6a has a face-centered cubic lattice structure; and the piezoelectric thin film 2 has a wurtzite structure.

公开(公告)号：US11621389B2

公开(公告)日：2023-04-04

申请号：US17023730

申请日：2020-09-17

申请人： ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE

发明人： Kang-Ho Park ,  Seongdeok Ahn ,  Jong Tae Lim ,  Chan Woo Park ,  Ji-Young Oh

IPC分类号： H01L41/047 ,  H01L41/053 ,  H01L41/083

摘要： Provided is a low frequency vibrating actuator device. The low frequency vibrating actuator device includes a substrate including a pair of connection electrodes, an actuator provided on the pair of connection electrodes to generate vibration, a support provided on the actuator, a vibration membrane provided on the support to vibrate according to the actuator, and a vibrating mass provided on the vibration membrane to vibrate according to the vibration membrane. The actuator includes a plurality of laminated insulating layers and internal electrodes that are alternately laminated between the insulating layers adjacent to each other, and a top surface of the support, which contacts the vibration membrane, has an area that is equal to or less than that of a bottom surface of the support, which contacts the actuator.

公开(公告)号：US20230095101A1

公开(公告)日：2023-03-30

申请号：US17898688

申请日：2022-08-30

申请人： FUJIFILM Corporation

发明人： Hiroyuki KOBAYASHI ,  Seigo NAKAMURA

IPC分类号： H01L41/18 ,  H01L41/047 ,  H01L41/083

摘要： A piezoelectric laminate and a piezoelectric element have, on a substrate in the following order, a lower electrode layer, and a piezoelectric film containing a perovskite-type oxide. The lower electrode layer includes a first layer arranged in a state of being in contact with the substrate and includes a second layer arranged in a state of being in contact with the piezoelectric film, the first layer contains Ti or TiW as a main component, the second layer is a uniaxial alignment film which contains Ir as a main component and in which the Ir is aligned in a (111) plane, and a half width at half maximum of an X-ray diffraction peak from the (111) plane is 0.3° or more.

公开(公告)号：US11611330B2

公开(公告)日：2023-03-21

申请号：US16737748

申请日：2020-01-08

申请人： University of Florida Research Foundation, Inc.

发明人： Roozbeh Tabrizian ,  Mayur Ghatge

IPC分类号： H01L41/083 ,  H01L41/18 ,  H03H9/17 ,  H03H9/54 ,  H03H9/56

摘要： A tunable non-reciprocal frequency limiter with an asymmetric micro-electro-mechanical resonator has two independent transducer ports. One port has a film stack including a 10 nm hafnium zirconium oxide (HZO) and another port has a film stack including a 120 nm aluminum nitride (AlN) film. These film stacks are deposited on top of 70 nm single crystal silicon substrate applying CMOS compatible fabrication techniques. The asymmetric transducer architecture with dissimilar electromechanical coupling coefficients force the resonator into mechanical nonlinearity on actuation with transducer having larger coupling. A proof-of-concept electrically-coupled channel filter is demonstrated with two such asymmetric resonators at ˜253 MHz with individual Qres of ˜870 and a non-reciprocal transmission ratio (NTR) ˜16 dB and BW3 dB of 0.25%.

公开(公告)号：US11607707B2

公开(公告)日：2023-03-21

申请号：US16232431

申请日：2018-12-26

申请人： TDK CORPORATION

发明人： Kaoru Kijima ,  Kazuki Saito

IPC分类号： B06B1/06 ,  H01L41/047 ,  B06B1/02 ,  H01L41/09 ,  H01L41/083 ,  H01L41/04 ,  G10K9/125

摘要： A vibration device includes a piezoelectric element, a vibration member to which the piezoelectric element is bonded, and a wiring member connected with the piezoelectric element. A method for vibrating the vibration device includes inputting a signal including a fundamental frequency component to the piezoelectric element through the wiring member, and vibrating the vibration device in a vibration mode that includes the fundamental frequency component and does not approximately include a high order frequency component that is n times (n represents an integer of 2 or more) the fundamental frequency component. The fundamental frequency component is lower than the resonance frequency component of the vibration device.

公开(公告)号：US11590536B2

公开(公告)日：2023-02-28

申请号：US16274477

申请日：2019-02-13

申请人： SONICMEMS (ZHENGZHOU) TECHNOLOGY CO., LTD. ,  PEKING UNIVERSITY SHENZHEN GRADUATE SCHOOL

发明人： Yu-Feng Jin ,  Sheng-Lin Ma ,  Qian-Cheng Zhao ,  Yi-Hsiang Chiu ,  Huan Liu ,  Hung-Ping Lee ,  Dan Gong

IPC分类号： B06B3/00 ,  B06B1/06 ,  H01L41/083 ,  H01L41/08 ,  H01L41/277 ,  H01L41/332 ,  H01L41/337 ,  H01L41/338 ,  G06K9/00 ,  G06V40/13

摘要： A wafer level ultrasonic chip module includes a substrate, a composite layer, a conducting material, and a base material. The substrate has a through slot that passes through an upper surface of the substrate and a lower surface of the substrate. The composite layer includes an ultrasonic body and a protective layer. A lower surface of the ultrasonic body is exposed from the through slot. The protective layer covers the ultrasonic body and a partial upper surface of the substrate. The protective layer has an opening, from which a partial upper surface of the ultrasonic body is exposed. The conducting material is in contact with the upper surface of the ultrasonic body. The base material covers the through slot, such that a space is formed among the through slot, the lower surface of the ultrasonic body and an upper surface of the base material.

公开(公告)号：US11581476B2

公开(公告)日：2023-02-14

申请号：US16818881

申请日：2020-03-13

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

发明人： Chun-Wen Cheng ,  Chun Yin Tsai ,  Chia-Hua Chu

IPC分类号： H01L41/08 ,  H01L41/047 ,  H01L41/293 ,  H01L41/083

摘要： A semiconductor structure is provided. The semiconductor structure includes a substrate, a first piezoelectric layer, and a first dummy layer. The first piezoelectric layer is over the substrate, and the first piezoelectric layer has a first top surface. The first dummy layer is over the first piezoelectric layer, and the first dummy layer has a second top surface. And an average roughness of the first top surface is greater than an average roughness of the second top surface. A method for manufacturing the semiconductor structure is also provided.