公开(公告)号：US12237646B2

公开(公告)日：2025-02-25

申请号：US17666896

申请日：2022-02-08

Applicant: Sumitomo Electric Industries, Ltd.

Inventor： Takehiko Kikuchi ,  Naoki Fujiwara ,  Nobuhiko Nishiyama

IPC: H01S5/10 ,  H01S5/02 ,  H01S5/22 ,  H01S5/30

Abstract: A method of manufacturing a semiconductor optical device includes a step of bonding a semiconductor element to a substrate that includes silicon, the semiconductor element being made of a III-V compound semiconductor and having optical gain; after the step of bonding the semiconductor element, a step of molding the semiconductor element by wet-etching; and after the step of molding the semiconductor element, a step of forming a mesa at the semiconductor element. The substrate includes a waveguide, a groove that extends along the waveguide, a terrace that is positioned on a side of the groove opposite to the waveguide, and a wall that covers the groove. The step of bonding the semiconductor element is a step of bonding the semiconductor element to the waveguide, the groove, the terrace, and the wall of the substrate.

公开(公告)号：US20250023330A1

公开(公告)日：2025-01-16

申请号：US18221103

申请日：2023-07-12

Applicant: II-VI Delaware, Inc.

Inventor： Anissa Zeghuzi ,  Rene Todt

IPC: H01S5/22 ,  H01S5/20

Abstract: An edge-emitting semiconductor laser and fabrication method is disclosed that includes a second, passive waveguide and cladding layer disposed above the multi-layer arrangement of a first waveguiding layer and a first cladding layer. The active region of the laser is contained within or along a lower surface of the first waveguiding layer, as in standard devices. The regrowth interface is located along a top surface of the first cladding layer, as compared to the prior art where this interface is located within the first waveguiding layer. The resulting configuration exhibits an improved coupling efficiency by maintaining the propagating optical mode within the active waveguiding layer and away from the regrowth interface.

公开(公告)号：US20240396306A1

公开(公告)日：2024-11-28

申请号：US18797149

申请日：2024-08-07

Applicant: Nuvoton Technology Corporation Japan

Inventor： Masayuki HATA ,  Toru TAKAYAMA ,  Shinji YOSHIDA ,  Yasutoshi KAWAGUCHI

IPC: H01S5/343 ,  H01S5/22

Abstract: A nitride semiconductor light-emitting element includes: a substrate comprising GaN; a first cladding layer comprising AlGaN and disposed above the substrate; an active layer disposed above the substrate; and a first semiconductor layer interposed between the first cladding layer and the active layer. The active layer includes a well layer comprising a nitride semiconductor, and a barrier layer comprising a nitride semiconductor including Al. The average band gap energy of the first semiconductor layer is smaller than the average band gap energy of the first cladding layer. The first semiconductor layer comprises AlGaInN.

公开(公告)号：US20240396288A1

公开(公告)日：2024-11-28

申请号：US18737845

申请日：2024-06-07

Applicant: KYOCERA SLD Laser, Inc.

Inventor： Sten Heikman ,  Ryan Gresback ,  Fan Zhang ,  Eric Goutain

IPC: H01S5/00 ,  F21K9/64 ,  F21V29/70 ,  F21Y115/30 ,  H01S5/02 ,  H01S5/0222 ,  H01S5/02224 ,  H01S5/02257 ,  H01S5/02325 ,  H01S5/024 ,  H01S5/22 ,  H01S5/32 ,  H01S5/343

Abstract: A reflective material is formed on surfaces of optical elements by adhering a first adhesive material to a first carrier and a second adhesive material to a second carrier; placing a plurality of un-coated optical elements on the first adhesive material; adhering the second adhesive material to the plurality of un-coated optical elements so that the plurality of un-coated optical elements are sandwiched between the first carrier and the second carrier; applying a liquid form of the reflective material to exposed surfaces of the plurality of un-coated optical elements using a spray process to create a plurality of coated optical elements; and removing the plurality of coated optical elements from the first and second adhesive materials.

公开(公告)号：US20240380182A1

公开(公告)日：2024-11-14

申请号：US18692234

申请日：2022-02-10

Applicant: Mitsubishi Electric Corporation

Inventor： Atsushi ERA

IPC: H01S5/223 ,  H01S5/22

Abstract: A semiconductor laser device includes: a ridge having an n-type clad layer, a lower-side light confinement layer, an active layer, and an upper-side light confinement layer which are laminated in this order from a lower side; current blocking layers embedded on both sides of the ridge, the current blocking layers each having a semi-insulating blocking layer covering a side surface of the ridge, an intermediate blocking layer, and an n-type blocking layer which are laminated in this order from the lower side; and a p-type clad layer formed on the ridge and the current blocking layers, in which the ridge has the upper-side light confinement layer as an uppermost layer of the ridge, and the intermediate blocking layer has a higher energy level at a bottom of a conduction band of the intermediate blocking layer compared to the semi-insulating blocking layer.

公开(公告)号：US20240372332A1

公开(公告)日：2024-11-07

申请号：US18313347

申请日：2023-05-07

Applicant: Chong Zhang ,  Zeyu Zhang ,  Minh Tran ,  Tin Komljenovic

Inventor： Chong Zhang ,  Zeyu Zhang ,  Minh Tran ,  Tin Komljenovic

IPC: H01S5/22

Abstract: A heterogenous device includes a passive waveguide structure and an active waveguide structure. The passive waveguide structure is attached to a substrate and includes a dielectric layer. The active waveguide structure is attached to a top surface of the passive waveguide structure and includes a quantum well layer overlying an InGaP layer. The InGaP layer provides n-contact functionality.
A heterogenous device includes a passive waveguide structure and an active waveguide structure. The passive waveguide structure is attached to a substrate and includes a semiconductor layer. The active waveguide structure is attached to a top surface of the passive waveguide structure and includes a quantum well layer overlying an InGaP layer. The InGaP layer provides n-contact functionality.

公开(公告)号：US12119611B2

公开(公告)日：2024-10-15

申请号：US17408998

申请日：2021-08-23

Applicant: NUVOTON TECHNOLOGY CORPORATION JAPAN

Inventor： Masayuki Ono ,  Katsuya Samonji ,  Tohru Nishikawa ,  Hiroshi Asaka ,  Mitsuru Nishitsuji ,  Kazuya Yamada

IPC: H01S5/0234 ,  H01S5/022 ,  H01S5/22 ,  H01S5/40 ,  H01S5/02 ,  H01S5/323

CPC classification number: H01S5/0234 ,  H01S5/022 ,  H01S5/2207 ,  H01S5/4018 ,  H01S5/4031 ,  H01S5/0202 ,  H01S5/0203 ,  H01S5/32341

Abstract: A semiconductor laser apparatus includes: a semiconductor laser device for junction down mounting that includes a first light-emitting device region and a second light-emitting device region formed separately on a substrate. The first light-emitting device region and the second light-emitting device region in the semiconductor laser device each have a stack structure in which an n-type semiconductor layer, an active layer, and a p-type semiconductor layer are stacked in stated order. The first light-emitting device region includes a first electrode film located on the n-type semiconductor layer. The second light-emitting device region includes a second electrode film located on the p-type semiconductor layer. The first electrode film and the second electrode film are electrically connected to each other.

公开(公告)号：US20240339810A1

公开(公告)日：2024-10-10

申请号：US18452338

申请日：2023-08-18

Applicant: Lumentum Operations LLC

Inventor： Masahiro EBISU

IPC: H01S5/042 ,  H01S5/023 ,  H01S5/22 ,  H01S5/40

CPC classification number: H01S5/04256 ,  H01S5/023 ,  H01S5/22 ,  H01S5/4031

Abstract: A semiconductor array device includes mesa-stripe structures each including an active layer electrically connected to the semiconductor substrate; individual electrodes each electrically connected to the active layer; and common electrodes each electrically connected to the semiconductor substrate. The mesa-stripe structures include a first mesa-stripe structure and a pair of second mesa-stripe structures, the pair of second mesa-stripe structures sandwiching the first mesa-stripe structure. The common electrodes include a first electrode and a pair of second electrodes, the pair of second electrodes sandwiching the first electrode. The first electrode is closest to the first mesa-stripe structure among the mesa-stripe structures. Each of the pair of second electrodes is closest to a corresponding one of the pair of second mesa-stripe structures among the mesa-stripe structures. Each of the pair of second electrodes is smaller in area than the first electrode.

公开(公告)号：US20240332911A1

公开(公告)日：2024-10-03

申请号：US18574890

申请日：2022-06-27

Applicant: NICHIA CORPORATION

Inventor： Yoshitaka NAKATSU ,  Kazutaka TSUKAYAMA

IPC: H01S5/343 ,  H01S5/026 ,  H01S5/12 ,  H01S5/22 ,  H01S5/30

CPC classification number: H01S5/34333 ,  H01S5/026 ,  H01S5/1231 ,  H01S5/2218 ,  H01S5/3063 ,  H01S2301/04 ,  H01S2301/163

Abstract: A semiconductor laser element includes a nitride semiconductor layered body defining an optical waveguide, and including a first n-side nitride semiconductor layer having a periodic structure of a refractive index periodically changing along a resonance direction of the optical waveguide, a p-side nitride semiconductor layer, an active layer including one or more well lavers and barrier lavers, the one or more well layers including an n-side well layer located closest to the first n-side nitride semiconductor laver, and the one or more barrier layers including an n-side barrier layer disposed between the n-side well layer and the first n-side nitride semiconductor layer, and a second n-side nitride semiconductor layer disposed between the first n-side nitride semiconductor layer and the active layer. The second n-side nitride semiconductor layer includes In and Ga. A thickness of the second n-side nitride semiconductor layer is greater than a thickness of the n-side barrier layer.

公开(公告)号：US20240322526A1

公开(公告)日：2024-09-26

申请号：US18585288

申请日：2024-02-23

Applicant: CoreOptics Technology Inc.

Inventor： Fa-Tzu Chen ,  Ju-Chun Cheng

IPC: H01S5/22 ,  H01S5/028

CPC classification number: H01S5/22 ,  H01S5/0282

Abstract: A high-power edge-emitting laser device and a manufacturing method thereof are disclosed. The high-power edge-emitting laser device includes a substrate, a first cladding layer, an active layer, a second cladding layer, a cap layer, a passivation layer, and a dielectric layer. The first cladding layer is disposed on the substrate. The active layer is disposed on the first cladding layer. The second cladding layer is disposed on the active layer. The cap layer is disposed on the second cladding layer. The cap layer and the second cladding layer have a ridge waveguide and the ridge waveguide is a T-shape structure. The passivation layer is disposed on a luminous mesa. The dielectric layer is disposed on the passivation layer and covers a luminous facet.