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3771 条记录 (耗时 0.024 秒)

    Radio frequency transceiver device
    1.
    发明授权
    Radio frequency transceiver device 有权

    公开(公告)号：US12119802B2

    公开(公告)日：2024-10-15

    申请号：US17830970

    申请日：2022-06-02

    申请人： REALTEK SEMICONDUCTOR CORP.

    发明人： Chia-Yi Lee ,  Kuan-Yu Shih ,  Chia-Jun Chang

    IPC分类号： H03H7/38 ,  H03F3/19 ,  H04B1/44

    CPC分类号： H03H7/38 ,  H03F3/19 ,  H04B1/44 ,  H03F2200/294

    摘要： A radio frequency transceiver device includes an antenna unit, a first matching circuit, a receiver circuit, a second matching circuit, a transmitter circuit, and an auxiliary circuit. The receiver circuit includes a mixer unit. The auxiliary circuit includes a first transformer coil and a second transformer coil. The first matching circuit and the receiver circuit are configured to form a first signal reception channel to receive, process, and transmit the first radio frequency signal to the mixer unit when the first radio frequency signal is a high gain radio frequency signal. The second matching circuit and the auxiliary circuit are configured to form a second signal reception channel to receive, process, and transmit the first radio frequency signal to the mixer unit when the first radio frequency signal is a middle-low gain radio frequency signal. Another radio frequency signal transceiver device further includes a third matching circuit.

    PHASE INVARIANT VARIABLE GAIN AMPLIFIER FOR A WIRELESS SYSTEM
    2.
    发明公开
    PHASE INVARIANT VARIABLE GAIN AMPLIFIER FOR A WIRELESS SYSTEM 审中-公开

    公开(公告)号：US20240322776A1

    公开(公告)日：2024-09-26

    申请号：US18614454

    申请日：2024-03-22

    申请人： BDCM A2 LLC

    发明人： Ahmet Hakan COSKUN ,  Wei-Min KUO

    IPC分类号： H03G3/30 ,  H01Q3/38 ,  H03F3/19

    CPC分类号： H03G3/3036 ,  H01Q3/38 ,  H03F3/19 ,  H03G2201/103 ,  H03G2201/307

    摘要： A variable gain amplifier is disclosed having parallel sets of transistors and control for bias voltages, wherein the average of bias voltage values is strategically controlled to reduce phase variance. For example, a variable gain amplifier may include a first set of transistors coupled to a first bias voltage, a second set of transistors coupled to a second bias voltage, where the second set of transistors is coupled in parallel with the first set of transistors, and a control module adapted to control the first and second bias voltages, the control module adapted to reduce the gain of the first set of transistors while increasing the gain of the second set of transistors.

    THERMALLY ADJUSTABLE DC BIAS CIRCUITY FOR RF POWER AMPLIFIER WITH REDUCED RF INTERFERENCE
    9.
    发明公开
    THERMALLY ADJUSTABLE DC BIAS CIRCUITY FOR RF POWER AMPLIFIER WITH REDUCED RF INTERFERENCE 审中-公开

    公开(公告)号：US20240250644A1

    公开(公告)日：2024-07-25

    申请号：US18158377

    申请日：2023-01-23

    申请人： Spreadtrum Communications USA Inc.

    发明人： Jason X Deng

    IPC分类号： H03F1/32 ,  H03F1/30 ,  H03F3/19

    CPC分类号： H03F1/32 ,  H03F1/30 ,  H03F3/19 ,  H03F2200/447 ,  H03F2200/451 ,  H03F2200/468

    摘要： A circuit includes: an RF amplifier including RF transistor(s); a DC power source electrically coupled to the RF amplifier; a bias control input that receives a bias control signal from a bias control circuit electrically coupled to the DC power source; and a thermal tracking circuit located at a distance from the RF transistor(s) such that RF interference between the RF transistor(s) and the thermal tracking circuit is below a threshold during circuit operation. The thermal tracking circuit includes heating element(s), a DC bias reference device, and a thermal tracking control circuit electrically coupled to the DC power source and the heating element(s). The thermal tracking control circuit generates a signal that controls a thermal behavior of the heating element(s). The heating element(s) heat the DC bias reference device when activated. The DC bias reference device is electrically coupled to the bias control input to modulate a bias voltage.