ATOMIC OXYGEN AND OZONE CLEANING DEVICE HAVING A TEMPERATURE CONTROL APPARATUS

    公开(公告)号:WO2022191955A1

    公开(公告)日:2022-09-15

    申请号:PCT/US2022/016332

    申请日:2022-02-14

    Abstract: Embodiments of the present disclosure relate to an oxygen cleaning chamber with UV radiation generator temperature control and a method of atomic oxygen cleaning a substrate. The atomic oxygen cleaning chamber includes a process chamber and a cooling chamber coupled to the process chamber and a divider sealingly separating the process chamber from the cooling chamber. An ultraviolet (UV) radiation generator is disposed in the cooling chamber and provides UV radiation through the divider into the process chamber. A gas distribution assembly distributes ozone over an upper surface of a pedestal in the process chamber and a coolant distribution assembly distributes cooling gas into the cooling chamber to cool the UV radiation generator. By actively cooling the UV radiation generator, a higher intensity UV radiation at a stable wavelength is produced, i.e., without wavelength drift normally associated with high power UV radiation generator outputs.

    CONTROL OF PROCESSING PARAMETERS FOR SUBSTRATE POLISHING WITH SUBSTRATE PRECESSION

    公开(公告)号:WO2022187105A1

    公开(公告)日:2022-09-09

    申请号:PCT/US2022/018014

    申请日:2022-02-25

    Abstract: Generating a recipe for a polishing process includes receiving a target removal profile that includes a target thickness to remove for locations spaced angularly around a center of a substrate, storing a first function providing substrate orientation relative to a carrier head over time, storing a second function defining a polishing rate below a zone of the zone as a function of one or more pressures of one or more zones of the carrier head, and for each particular zone of the plurality of zones, calculate a recipe defining a pressure for the particular zone over time. Calculating the recipe includes calculating an expected thickness profile after polishing from the second function defining the polishing rate and the first function providing substrate orientation relative to the zone over time, and applying a minimizing algorithm to reduce a difference between the expected thickness profile and the target thickness profile.

    PRESSURE SIGNALS DURING MOTOR TORQUE MONITORING TO PROVIDE SPATIAL RESOLUTION

    公开(公告)号:WO2022187025A1

    公开(公告)日:2022-09-09

    申请号:PCT/US2022/017266

    申请日:2022-02-22

    Abstract: A method of polishing includes holding a substrate with a carrier head against a polishing surface of a polishing pad, generating relative motion between the substrate and polishing pad, applying a first pressure modulated by a first modulation function to a first region of the substrate, applying a second pressure modulated by a second modulation function that is orthogonal to the first modulation function to a second region of the substrate, during polishing of the substrate monitoring the substrate with an in-situ friction monitoring system to generate a sequence of measured values, and determining a relative contribution to the sequence of measured value from the first region and second region based on distinguishing the first frequency from the second frequency.

    MOTOR TORQUE ENDPOINT DURING POLISHING WITH SPATIAL RESOLUTION

    公开(公告)号:WO2022186993A1

    公开(公告)日:2022-09-09

    申请号:PCT/US2022/016857

    申请日:2022-02-17

    Inventor: LI, Thomas

    Abstract: During polishing of a substrate a sequence of measured values is received from an in-situ motor torque monitoring system. Positions on the substrate of the region of lower coefficient of friction are calculated for at least two measured values from the sequence of measured values. A first measured value from the sequence of measured values at which the region of different coefficient of friction is at a first position in a first zone on the substrate is compared to a second measured value from the sequence of measured values at which the region of different coefficient of friction is at a second position in a different second zone on the substrate or is not below the substrate. Based on the comparison, which of the first zone or the second zone the overlying layer is clearing first to expose the underlying layer can be determined.

    FORMING MESAS ON AN ELECTROSTATIC CHUCK
    99.
    发明申请

    公开(公告)号:WO2022186913A2

    公开(公告)日:2022-09-09

    申请号:PCT/US2022/013530

    申请日:2022-01-24

    Abstract: A body of an electrostatic chuck comprises mesas disposed on a polished surface of the body. Each of the mesas comprises an adhesion layer disposed on the polished surface of the body, a transition layer disposed over the adhesion layer, and a coating layer disposed over the transition layer. The coating layer has a hardness of at least 14 Gpa. The body further comprises a sidewall coating disposed over a sidewall of the body. A method for preparing the body comprises polishing the surface of the body and cleaning the polished surface. The method further comprises depositing the mesas by depositing the adhesion layer on the body, the transition layer over the adhesion layer, and the coating layer over the transition layer. Further, the method includes, polishing the mesas.

    METHODS AND APPARATUS FOR PROCESSING A SUBSTRATE

    公开(公告)号:WO2022182410A1

    公开(公告)日:2022-09-01

    申请号:PCT/US2021/064488

    申请日:2021-12-21

    Abstract: Methods and apparatus for processing a substrate are provided herein. For example, a matching network configured for use with a plasma processing chamber comprises an input configured to receive one or more radio frequency (RF) signals, an output configured to deliver the one or more RF signals to a processing chamber, a first variable capacitor disposed between the input and the output, a second variable capacitor disposed in parallel to the first variable capacitor, a MEMS array comprising a plurality of variable capacitors connected in series with the first variable capacitor, and a controller configured to tune the matching network between a first frequency for high-power operation and a second frequency for low-power operation.

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