公开(公告)号：WO2022098464A8

公开(公告)日：2022-05-12

申请号：PCT/US2021/053536

申请日：2021-10-05

Applicant: APPLIED MATERIALS, INC.

Inventor： ADERHOLD, Wolfgang ,  WANG, Yi

IPC: H01L21/02 ,  H01L21/67 ,  H01L21/687 ,  H01L21/324 ,  F27B17/0025 ,  F27D19/00 ,  F27D21/0014 ,  H01L21/67109 ,  H01L21/67115 ,  H01L21/67248 ,  H01L21/68742

Abstract: Embodiments disclosed herein include a method of processing a substrate. In an embodiment, the method comprises detecting one or more substrate parameters of a substrate in a processing chamber, and heating the substrate to a first temperature with an open loop tuning (OLT) heating process based on the one or more substrate parameters. In an embodiment, the method may further comprise placing the substrate on an edge ring, and heating the substrate to a second temperature with a low temperature closed loop controller. In an embodiment, the method further comprises heating the substrate to a third temperature with a high temperature closed loop controller.

公开(公告)号：WO2022010875A1

公开(公告)日：2022-01-13

申请号：PCT/US2021/040480

申请日：2021-07-06

Applicant: LAM RESEARCH CORPORATION

Inventor： BHOWMICK, Ranadeep ,  KOZAKEVICH, Felix ,  MARAKHTANOV, Alexei ,  HOLLAND, John ,  HUDSON, Eric

IPC: H01J37/32 ,  H01L21/67 ,  H01L21/67109 ,  H01L21/6831 ,  H01L21/68742

Abstract: A method for applying RF power in a plasma process chamber is provided, including: generating a first RF signal; generating a second RF signal; generating a third RF signal; wherein the first, second, and third RF signals are generated at different frequencies; combining the first, second and third RF signals to generate a combined RF signal, wherein a wave shape of the combined RF signal is configured to approximate a sloped square wave shape; applying the combined RF signal to a chuck in the plasma process chamber.

公开(公告)号：WO2021254714A1

公开(公告)日：2021-12-23

申请号：PCT/EP2021/063358

申请日：2021-05-19

Applicant: EVATEC AG

Inventor： BENZ, Rico ,  DÜTSCHLER, Martin ,  STEINKELLER, Josef ,  ZORZI, Daniele ,  PATSCHEIDER, Jörg ,  VOSER, Stephan ,  MATTEACCI, Pierre

IPC: H01L21/67 ,  C23C14/56 ,  C23C14/02 ,  C23C14/50 ,  C23C16/02 ,  C23C16/54 ,  C23C16/46 ,  H01L21/677 ,  C23C14/568 ,  C23C16/0209 ,  H01L21/67109 ,  H01L21/6719 ,  H01L21/67248 ,  H01L21/6776

Abstract: So as to perform a vacuum surface treatment on a workpiece at a predetermined temperature, which is different from a temperature to which the surface is exposed during the vacuum surface treatment, the workpiece is conveyed in a conveyance direction (W) along one or more than one station group (11) consisting of one or more than one tempering station (13) and of a single treatment station (15).

公开(公告)号：WO2021102181A2

公开(公告)日：2021-05-27

申请号：PCT/US2020/061355

申请日：2020-11-19

Applicant: HIGH PRECISION DEVICES INC.

Inventor： SNOW, Michael ,  WEST, Joshua

IPC: H01L21/66 ,  H01L23/44 ,  G01R31/00 ,  H01L21/67109 ,  H01L21/6719 ,  H01L21/67288 ,  H01L21/68728 ,  H01L21/68742 ,  H01L21/68785 ,  H01L21/68792

Abstract: Cryogenic testing systems for testing electronic components such as wafers under cryogenic conditions are provided. The novel designs enable fast throughput by use of a cryogenically maintained test surface to which wafers may be rapidly introduced, cooled, and manipulated to contact testing elements while maintaining high quality cryogenic conditions. Thermal shielding is achieved by floating shields and/or flexible bellows that provide effective thermal shielding of the test environment while enabling manipulation of wafers with a wide range of motion. Also provided are novel door assemblies, chuck configurations, and vacuum plate bases that enable effective maintenance of cryogenic conditions and high throughput.

公开(公告)号：WO2022238611A1

公开(公告)日：2022-11-17

申请号：PCT/FI2022/050274

申请日：2022-04-27

Applicant: PICOSUN OY

Inventor： KILPI, Väinö ,  BLOMBERG, Tom

IPC: C23C16/455 ,  C23C16/46 ,  F27D99/00 ,  H01J37/32 ,  B01J19/00 ,  H01L21/67 ,  H01L21/3065 ,  C30B25/08 ,  C30B25/10 ,  B01J19/0013 ,  B01J6/00 ,  C23C16/45544 ,  C23C16/56 ,  H01J37/32522 ,  H01J37/32807 ,  H01J37/3288 ,  H01L21/02263 ,  H01L21/67103 ,  H01L21/67109 ,  H01L21/67115 ,  H01L21/6719 ,  H05B3/00

Abstract: A substrate processing apparatus, comprising a reaction chamber, an outer chamber at least partly surrounding the reaction chamber wherein an intermediate space is formed between the reaction chamber and the outer chamber, at least one heater element, at least one heat distributor in the intermediate space, and at least one heater element feedthrough in the outer chamber allowing at least a part of the at least one heater element to pass through into the intermediate space and to couple with the at least one heat distributor.

公开(公告)号：WO2022010872A1

公开(公告)日：2022-01-13

申请号：PCT/US2021/040476

申请日：2021-07-06

Applicant: APPLIED MATERIALS, INC.

Inventor： PANAVALAPPIL KUMARANKUTTY, Hanish Kumar ,  SEUTTER, Sean M. ,  GONDHALEKAR, Sudhir R. ,  BOYD, Wendell Glenn ,  RAMAMURTHI, Badri ,  ATHANI, Shekhar ,  KALAL, Anil Kumar ,  PINSON, Jay Dee, II

IPC: H01L21/683 ,  H01L21/67 ,  H01L21/687 ,  H01J37/32 ,  H01J2237/2007 ,  H01J37/32724 ,  H01L21/67109 ,  H01L21/6833 ,  H01L21/6875

Abstract: Embodiments of the disclosure provide electrostatic chucks for securing substrates during processing. Some embodiments of this disclosure provide methods and apparatus for increased temperature control across the radial profile of the substrate. Some embodiments of the disclosure provide methods and apparatus for providing control of hydrogen concentration in processed films during a high-density plasma (HDP) process.

公开(公告)号：WO2021257440A1

公开(公告)日：2021-12-23

申请号：PCT/US2021/037198

申请日：2021-06-14

Applicant: APPLIED MATERIALS, INC.

Inventor： ZHONG, Lanlan ,  PETHE, Shirish A. ,  ZHANG, Fuhong ,  LEE, Joung Joo ,  KALATHIPARAMBIL, Kishor ,  XIE, Xiangjin ,  TANG, Xianmin

IPC: H01L21/768 ,  H01L21/285 ,  C23C14/58 ,  C23C16/00 ,  H01L21/32115 ,  H01L21/67109 ,  H01L21/67115 ,  H01L21/76882 ,  H01L23/53228

Abstract: A method of filling structures on a substrate uses a semi-dynamic reflow process. The method may include depositing a metallic material on the substrate at a first temperature, heating the substrate to a second temperature higher than the first temperature wherein heating of the substrate causes a static reflow of the deposited metallic material on the substrate, stopping heating of the substrate, and depositing additional metallic material on the substrate causing a dynamic reflow of the deposited additional metallic material on the substrate. RF bias power may be applied during the dynamic reflow to facilitate in maintaining the temperature of the substrate.

公开(公告)号：WO2021140078A1

公开(公告)日：2021-07-15

申请号：PCT/EP2021/050037

申请日：2021-01-05

Applicant: AIXTRON SE

Inventor： LEIERS, Ralf

IPC: C23C16/458 ,  C23C16/46 ,  H01L21/67 ,  H01L21/687 ,  C23C16/4584 ,  C23C16/4586 ,  H01L21/67109 ,  H01L21/67248 ,  H01L21/68764 ,  H01L21/68771

Abstract: Die Erfindung betrifft einen CVD-Reaktor und ein Verfahren zur Steuerung/Regelung der Oberflächentemperatur von darin angeordneten Substraten, die auf Substrathalteelementen (3) liegen, welche beispielsweise von einem dynamischen Gaspolster (7) getragen werden, wobei nacheinander jeweils einem Substrathalteelement (3) zugeordnete Ist-Werte (Tn) der Oberflächentemperaturen gemessen werden und die Oberflächentemperaturen durch Variation der Höhe der Gaspolster (7) auf einen gemeinsamen Wert geregelt werden. Erfindungsgemäß wird vorgeschlagen, dass nach jeder Messung eines einem Substrathalteelement (3) zugeordneten gemessenen Ist-Wertes (Tn) der Oberflächentemperatur unter Verwendung jeweils nur des zuletzt gemessenen IstWertes (Tn) der Oberflächentemperatur jedes Substrathalteelementes (3) ein erster Mittel-Wert (MT) berechnet wird, durch Bildung einer Differenz des bei der Messung gemessenen Ist-Wertes (Tn) und dem ersten Mittel-Wert (MT) ein dem Substrathalteelement (3) zugeordneter Differenz-Wert (dTn) berechnet wird, und zu jedem der anderen Substrathalteelemente (3) jeweils durch Addition des zugeordneten Differenz-Wertes (dTn) zum ersten Mittel-Wert (MT) ein approximierter Ist-Wert (Tn') berechnet wird, der für die Steuerung/Regelung verwendet wird.

公开(公告)号：WO2022186913A2

公开(公告)日：2022-09-09

申请号：PCT/US2022/013530

申请日：2022-01-24

Applicant: APPLIED MATERIALS, INC.

Inventor： BOYD, JR., Wendell Glenn ,  WU, Stanley ,  BOYD, Matthew

IPC: H01L21/683 ,  H01L21/687 ,  H01J37/32 ,  C23C16/0227 ,  C23C16/308 ,  C23C16/4583 ,  H01L21/67109 ,  H01L21/6833 ,  H01L21/6875 ,  H01L21/68757

Abstract: A body of an electrostatic chuck comprises mesas disposed on a polished surface of the body. Each of the mesas comprises an adhesion layer disposed on the polished surface of the body, a transition layer disposed over the adhesion layer, and a coating layer disposed over the transition layer. The coating layer has a hardness of at least 14 Gpa. The body further comprises a sidewall coating disposed over a sidewall of the body. A method for preparing the body comprises polishing the surface of the body and cleaning the polished surface. The method further comprises depositing the mesas by depositing the adhesion layer on the body, the transition layer over the adhesion layer, and the coating layer over the transition layer. Further, the method includes, polishing the mesas.

公开(公告)号：WO2022049063A2

公开(公告)日：2022-03-10

申请号：PCT/EP2021/074000

申请日：2021-08-31

Applicant: AIXTRON SE

Inventor： HENS, Philip

IPC: C23C16/32 ,  C23C16/455 ,  C23C16/458 ,  C23C16/48 ,  C30B25/10 ,  C30B25/12 ,  H01L21/67 ,  H01L21/687 ,  C23C16/325 ,  C23C16/45508 ,  C23C16/4581 ,  C23C16/4584 ,  C23C16/4585 ,  C23C16/4586 ,  C23C16/483 ,  H01L21/67098 ,  H01L21/67109 ,  H01L21/68764 ,  H01L21/68771

Abstract: Die Erfindung betrifft einen CVD-Reaktor mit einem in einem Reaktorgehäuse angeordneten Suszeptor (2), der einen Boden einer Prozesskammer (1) bildet, einem Gaseinlassorgan (3), welches mindestens einen Gaseinlassbereich (4, 4') aufweist, mit einer unterhalb des Suszeptors (2) angeordneten Heizeinrichtung (6) zur Erzeugung eines Temperaturunterschiedes zwischen dem Grundkörper (7) und einer Prozesskammerdecke (15), mit mehreren vom Gaseinlassorgan (3) in einer Strömungsrichtung beabstandeten Substratträgern (12), jeweils zur Aufnahme von zu beschichtenden Substraten (14) und mit mehreren zwischen dem Gaseinlassorgan (3) und den Substratträgern (12) angeordneten Vorlaufzonenplatten (10), wobei eine Vorlaufzonentemperatur jeweils der zur Prozesskammer (1) weisenden Oberfläche der Vorlaufzonenplatte (10) durch die Auswahl oder Einstellung jeweils eines Wärmeübertragungsmittels (11) einstellbar sind. Zur Individualisierung der Vorlaufzonentemperatur können die Vorlaufzonenplatten (10) gegen andere Vorlaufzonenplatten (10) mit anderen Wärmeübertragungseigenschaften ausgetauscht werden.