公开(公告)号：WO2016118853A1

公开(公告)日：2016-07-28

申请号：PCT/US2016/014508

申请日：2016-01-22

Applicant: ALTA DEVICES, INC.

Inventor： HE, Gang ,  KAYES, Brendan ,  FRANCE, Christopher

IPC: H02J50/30 ,  H02J7/02 ,  H02J7/00 ,  H04B10/80

CPC classification number: H02J7/355 ,  H02J7/0036 ,  H02J7/0044 ,  H02J7/025 ,  H02J7/35 ,  H02J50/30 ,  H02J50/90

Abstract: A charging device configured to charge a mobile device through the solar cells integrated on the mobile device. The charging device converts wall power to light energy which can be absorbed by the solar cells and then converted to electricity for storage in the rechargeable battery of the mobile device. The charging device includes a light source configured to emit a light beam having a spectrum tuned to the spectral response of the solar cells. The charging device includes a proximity sensor for detecting the presence of a mobile device within the charging device housing and responsively signaling the activation of the light source. The charging device includes logic for wirelessly communicating with the mobile device as well as controlling the charging process in various stages and aspects. The light source may be LEDs that also serve to transmit light communication signals to the mobile device.

Abstract translation: 配置成通过集成在移动设备上的太阳能电池为移动设备充电的充电装置。 充电装置将壁功率转换成能够被太阳能电池吸收的光能，然后转换成用于存储在移动装置的可再充电电池中的电能。 充电装置包括被配置为发射具有调谐到太阳能电池的光谱响应的光谱的光束的光源。 充电装置包括接近传感器，用于检测充电装置外壳内的移动装置的存在并响应于信号激活光源。 充电装置包括用于与移动设备进行无线通信的逻辑，以及在各个阶段和方面控制充电过程。 光源可以是也用于将光通信信号传输到移动设备的LED。

公开(公告)号：WO2013122757A1

公开(公告)日：2013-08-22

申请号：PCT/US2013/024411

申请日：2013-02-01

Applicant: ALTA DEVICES, INC.

Inventor： HE, Gang ,  MATTOS, Laila, S. ,  SCULLY, Shawn

IPC: H01L31/00

CPC classification number: H01L31/0508 ,  H01L31/0201 ,  H01L31/042 ,  H01L31/0465 ,  H01L31/048 ,  H01L31/0488 ,  H01L31/0504 ,  Y02E10/50

Abstract: A photovoltaic module is disclosed. The photovoltaic module comprises an array of shingled tiles disposed between a transparent front substrate and a back substrate, wherein the array of shingled tiles comprises a plurality of photovoltaic tiles in electrically contact with each other and positioned in overlapping rows. Each photovoltaic tile comprises a front metallic contact layer disposed on an epitaxial film stack disposed on a back metallic contact layer disposed on a support carrier layer. The photovoltaic module includes at least one busbar in electrical contact with the array of shingled tiles and disposed between the front and back glass substrates. The photovoltaic module also includes an encapsulation layer between the front and back glass substrates.

Abstract translation: 公开了一种光伏组件。 光伏模块包括布置在透明前基板和后基板之间的带状瓦的阵列，其中带状瓦的阵列包括彼此电接触并且以重叠的行定位的多个光伏瓦。 每个光伏瓦片包括设置在设置在支撑载体层上的背面金属接触层上的外延膜叠层上的前金属接触层。 光伏模块包括至少一个汇流条，其与带状瓦片阵列电接触并设置在前玻璃基板和后玻璃基板之间。 光伏模块还包括在前玻璃基板和后玻璃基板之间的封装层。

公开(公告)号：WO2011116015A1

公开(公告)日：2011-09-22

申请号：PCT/US2011/028553

申请日：2011-03-15

Applicant: ALTA DEVICES, INC. ,  HE, Gang ,  HIGASHI, Gregg ,  SORABJI, Khurshed ,  HAMAMJY, Roger ,  HEGEDUS, Andreas, G.

Inventor： HE, Gang ,  HIGASHI, Gregg ,  SORABJI, Khurshed ,  HAMAMJY, Roger ,  HEGEDUS, Andreas, G.

IPC: F27B5/14

CPC classification number: C30B25/10 ,  C23C16/01 ,  C23C16/4412 ,  C23C16/45519 ,  C23C16/45565 ,  C23C16/4583 ,  C23C16/481 ,  C23C16/482 ,  C23C16/54 ,  C30B25/025 ,  C30B29/40 ,  C30B29/42 ,  H01L21/67115 ,  H01L21/67784 ,  H05B3/0047

Abstract: Embodiments of the invention generally relate to apparatuses for chemical vapor deposition (CVD) processes. Embodiments of the invention generally relate to apparatuses and methods for chemical vapor deposition (CVD) processes. In one embodiment, a heating lamp assembly for a vapor deposition reactor system is provided which includes a lamp housing disposed of on an upper surface of a support base and containing a first lamp holder and a second lamp holder and a plurality of lamps extending from the first lamp holder to the second lamp holder. The plurality of lamps may have split filament lamps and/or non-split filament lamps, and in some examples, split and non-split filament may be alternately disposed between the first and second lamp holders. A reflector may be disposed on the upper surface of the support base between the first and second lamp holders. The reflector may contain gold or a gold alloy.

Abstract translation: 本发明的实施例一般涉及用于化学气相沉积（CVD）工艺的装置。 本发明的实施例一般涉及用于化学气相沉积（CVD）工艺的装置和方法。 在一个实施例中，提供了一种用于气相沉积反应器系统的加热灯组件，其包括设置在支撑基座的上表面上的灯壳，并且包含第一灯座和第二灯座以及从 第一个灯座到第二个灯座。 多个灯可以具有裂开的灯丝灯和/或非分裂灯丝灯，并且在一些示例中，分裂和非分裂灯丝可以​​交替地设置在第一和第二灯座之间。 反射器可以设置在第一和第二灯座之间的支撑基座的上表面上。 反射器可以包含金或金合金。

公开(公告)号：WO2011091386A1

公开(公告)日：2011-07-28

申请号：PCT/US2011/022300

申请日：2011-01-24

Applicant: ALTA DEVICES, INC. ,  HE, Gang ,  GMITTER, Thomas, J. ,  ARCHER, Melissa

Inventor： HE, Gang ,  GMITTER, Thomas, J. ,  ARCHER, Melissa

IPC: H01L21/683

CPC classification number: H01L21/6835 ,  H01L21/7806 ,  H01L31/0392 ,  H01L31/1892 ,  H01L2221/6835 ,  H01L2221/68363 ,  Y02E10/50 ,  Y10T428/24942 ,  Y10T428/31678

Abstract: Present embodiments generally relate to support structures for thin film components and methods for fabricating the support structures. In one embodiment, an apparatus comprises a device structure including portions of an electronic device; a support structure coupled to the device structure; wherein the support structure supplements features of the device structure and the support structure includes: a metal component coupled to the device structure; and a non-metal component coupled to the metal component. The support component can supplement structural and mechanical integrity of the device structure and functional operations of the device structure. In one embodiment, the metal component includes at least one layer of metal material and the non-metal component includes at least one layer of non metal material (e.g., polymeric material, etc.). The metal component can have greater stiffness characteristics with respect to the device structure and the non-metal component can have greater flexibility characteristics with respect to the metal layer component. The support structure can be configured to reflect light towards the device structure. The support structure can also be configured to conduct electricity from the device structure.

Abstract translation: 现有实施例一般涉及用于薄膜部件的支撑结构和用于制造支撑结构的方法。 在一个实施例中，一种设备包括包括电子设备的部分的设备结构; 耦合到所述装置结构的支撑结构; 其中所述支撑结构补充所述装置结构的特征，并且所述支撑结构包括：联接到所述装置结构的金属部件; 以及耦合到所述金属部件的非金属部件。 支撑部件可以补充装置结构的结构和机械完整性以及装置结构的功能操作。 在一个实施例中，金属部件包括至少一层金属材料，非金属部件包括至少一层非金属材料（例如，聚合材料等）。 金属部件相对于器件结构可以具有更大的刚度特性，并且非金属部件可以相对于金属层部件具有更大的柔性特性。 支撑结构可以被配置为将光反射到装置结构。 支撑结构也可以被配置成从设备结构传导电力。

公开(公告)号：WO2010107843A2

公开(公告)日：2010-09-23

申请号：PCT/US2010/027547

申请日：2010-03-16

Applicant: ALTA DEVICES, INC. ,  HE, Gang ,  HIGASHI, Gregg ,  SORABJI, Khurshed ,  HAMAMJY, Roger ,  HEGEDUS, Andreas

Inventor： HE, Gang ,  HIGASHI, Gregg ,  SORABJI, Khurshed ,  HAMAMJY, Roger ,  HEGEDUS, Andreas

IPC: H01L21/205 ,  H01L31/18 ,  H05H1/34

CPC classification number: C23C16/45565 ,  C23C16/4411 ,  C23C16/4412 ,  C23C16/45519 ,  C23C16/4557 ,  C23C16/4583 ,  C23C16/54

Abstract: Embodiments of the invention generally relate to apparatuses for chemical vapor deposition (CVD) processes. In one embodiment, a reactor lid assembly for vapor deposition is provided which includes a first showerhead assembly and an isolator assembly disposed next to each other on a lid support, and a second showerhead assembly and an exhaust assembly disposed next to each other on the lid support, wherein the isolator assembly is disposed between the first and second showerhead assemblies and the second showerhead assembly is disposed between the isolator assembly and the exhaust assembly.

Abstract translation: 本发明的实施例一般涉及用于化学气相沉积（CVD）工艺的装置。 在一个实施例中，提供了一种用于气相沉积的反应器盖组件，其包括在盖支撑件上彼此相邻设置的第一淋浴器组件和隔离器组件，以及在盖子上彼此相邻设置的第二淋浴头组件和排气组件 支撑件，其中隔离器组件设置在第一和第二喷头组件之间，并且第二喷头组件设置在隔离器组件和排气组件之间。

公开(公告)号：WO2010107842A2

公开(公告)日：2010-09-23

申请号：PCT/US2010/027545

申请日：2010-03-16

Applicant: ALTA DEVICES, INC. ,  HE, Gang ,  HIGASHI, Gregg ,  SORABJI, Khurshed ,  HAMAMJY, Roger ,  HEGEDUS, Andreas

Inventor： HE, Gang ,  HIGASHI, Gregg ,  SORABJI, Khurshed ,  HAMAMJY, Roger ,  HEGEDUS, Andreas

IPC: H01L21/205 ,  H01L31/18 ,  H05H1/34

CPC classification number: C23C16/45565 ,  C23C16/4411 ,  C23C16/4412 ,  C23C16/45519 ,  C23C16/4557 ,  C23C16/4583 ,  C23C16/54

Abstract: Embodiments of the invention generally relate to apparatuses for chemical vapor deposition (CVD) processes. In one embodiment, a showerhead assembly is provided which includes a body having a centralized channel extending through upper and lower portions of the body and extending parallel to a central axis of the body. The showerhead assembly contains an optional diffusion plate having a first plurality of holes and disposed within the centralized channel, an upper tube plate having a second plurality of holes and disposed within the centralized channel below the diffusion plate, a lower tube plate having a third plurality of holes and disposed within the centralized channel below the upper tube plate, and a plurality of tubes extending from the upper tube plate to the lower tube plate. Each tube is coupled to and in fluid communication with individual holes of the upper and lower tube plates.

Abstract translation: 本发明的实施例一般涉及用于化学气相沉积（CVD）工艺的装置。 在一个实施例中，提供了一种喷头组件，其包括具有延伸穿过主体的上部和下部并且平行于主体的中心轴线延伸的集中通道的主体。 淋浴头组件包括具有第一多个孔并且设置在集中通道内的可选扩散板，具有第二多个孔并且设置在扩散板下方的集中通道内的上管板，具有第三多个的下管板 并且设置在上管板下方的集中通道内，以及从上管板延伸到下管板的多个管。 每个管连接到上管和下管板的各个孔中并与其流体连通。

公开(公告)号：WO2010107837A2

公开(公告)日：2010-09-23

申请号：PCT/US2010/027540

申请日：2010-03-16

Applicant: ALTA DEVICES, INC. ,  HE, Gang ,  HIGASHI, Gregg ,  SORABJI, Khurshed ,  HAMAMJY, Roger ,  HEGEDUS, Andreas

Inventor： HE, Gang ,  HIGASHI, Gregg ,  SORABJI, Khurshed ,  HAMAMJY, Roger ,  HEGEDUS, Andreas

IPC: H01L21/673 ,  B65G51/03 ,  B65G49/06 ,  B65G54/02 ,  H01L21/205

CPC classification number: C23C16/45565 ,  C23C16/4411 ,  C23C16/4412 ,  C23C16/45519 ,  C23C16/4557 ,  C23C16/4583 ,  C23C16/54

Abstract: Embodiments of the invention generally relate to apparatuses for chemical vapor deposition (CVD) processes. In one embodiment, a wafer carrier track for levitating and traversing a wafer carrier within a vapor deposition reactor system is provided which includes upper and lower sections of a track assembly having a gas cavity formed therebetween. A guide path extends along an upper surface of the upper section and between two side surfaces which extend along and above the guide path and parallel to each other. A plurality of gas holes along the guide path extends from the upper surface of the upper section, through the upper section, and into the gas cavity. In some examples, the upper and lower sections of the track assembly may independently contain quartz, and in some examples, may be fused together.

Abstract translation: 本发明的实施例一般涉及用于化学气相沉积（CVD）工艺的装置。 在一个实施例中，提供了用于在气相沉积反应器系统内悬浮和横穿晶片载体的晶片载体轨道，其包括在其间形成有气体腔的轨道组件的上部和下部。 引导路径沿着上部的上表面延伸并且在引导路径之上和之上延伸并且彼此平行的两个侧表面之间延伸。 沿着引导路径的多个气孔从上部的上表面延伸穿过上部并进入气体腔。 在一些示例中，轨道组件的上部和下部可以独立地包含石英，并且在一些示例中可以将其熔合在一起。

公开(公告)号：WO2010078022A2

公开(公告)日：2010-07-08

申请号：PCT/US2009/068445

申请日：2009-12-17

Applicant: ALTA DEVICES, INC. ,  GMITTER, Thomas J. ,  HE, Gang ,  ARCHER, Melissa ,  HEGEDUS, Andreas

Inventor： GMITTER, Thomas J. ,  HE, Gang ,  ARCHER, Melissa ,  HEGEDUS, Andreas

IPC: H01L21/306 ,  H01L21/50 ,  H01L31/042

CPC classification number: H01L21/7813 ,  H01L21/30612 ,  H01L21/67086 ,  H01L21/67092 ,  H01L21/67132 ,  H01L21/6835 ,  H01L21/6836 ,  H01L31/184 ,  H01L2221/68318 ,  H01L2221/68345 ,  H01L2221/68381 ,  H01L2221/6839

Abstract: Embodiments of the invention generally relate to apparatuses and methods for producing epitaxial thin films and devices by epitaxial lift off (ELO) processes. In one embodiment, a method for forming thin film devices during an ELO process is provided which includes coupling a plurality of substrates to an elongated support tape, wherein each substrate contains an epitaxial film disposed over a sacrificial layer disposed over a wafer, exposing the substrates to an etchant during an etching process while moving the elongated support tape, and etching the sacrificial layers and peeling the epitaxial films from the wafers while moving the elongated support tape. Embodiments also include several apparatuses, continuous-type as well as a batch-type apparatuses, for forming the epitaxial thin films and devices, including an apparatus for removing the support tape and epitaxial films from the wafers on which the epitaxial films were grown.

Abstract translation: 本发明的实施例一般涉及通过外延剥离（ELO）工艺制造外延薄膜和器件的装置和方法。 在一个实施例中，提供了一种在ELO工艺期间形成薄膜器件的方法，其包括将多个衬底耦合到细长支撑带，其中每个衬底包含设置在设置在晶片上方的牺牲层上的外延膜， 在移动细长的支撑带的同时蚀刻过程中的蚀刻剂，以及蚀刻牺牲层并在移动细长的支撑带的同时从晶片上剥离外延膜。 实施例还包括几种用于形成外延薄膜和器件的连续型和间歇式器件的装置，包括用于从其上生长外延膜的晶片去除支撑带和外延膜的装置。

公开(公告)号：WO2010048543A2

公开(公告)日：2010-04-29

申请号：PCT/US2009/061906

申请日：2009-10-23

Applicant: ALTA DEVICES, INC. ,  KIZILYALLI, Isik C. ,  ARCHER, Melissa ,  ATWATER, Harry ,  GMITTER, Thomas J. ,  HE, Gang ,  HEGEDUS, Andreas ,  HIGASHI, Gregg

Inventor： KIZILYALLI, Isik C. ,  ARCHER, Melissa ,  ATWATER, Harry ,  GMITTER, Thomas J. ,  HE, Gang ,  HEGEDUS, Andreas ,  HIGASHI, Gregg

IPC: H01L31/042

CPC classification number: H01L31/0735 ,  Y02E10/544

Abstract: Methods and apparatus are provided for converting electromagnetic radiation, such as solar energy, into electric energy with increased efficiency when compared to conventional solar cells. In one embodiment of a photovoltaic (PV) device, the PV device generally includes an n-doped layer and a p+-doped layer adjacent to the n-doped layer to form a p-n layer such that electric energy is created when electromagnetic radiation is absorbed by the p-n layer. The n-doped layer and the p+-doped layer may compose an absorber layer having a thickness less than 500 nm. Such a thin absorber layer may allow for greater efficiency and flexibility in PV devices when compared to conventional solar cells.

Abstract translation: 提供了与常规太阳能电池相比，用于将电磁辐射如太阳能转换成电能的方法和装置，其效率提高。 在光伏（PV）器件的一个实施例中，PV器件通常包括与n掺杂层相邻的n掺杂层和p +掺杂层以形成pn层，使得当电磁辐射被吸收时产生电能 由pn层。 n掺杂层和p +掺杂层可以构成厚度小于500nm的吸收层。 当与常规太阳能电池相比时，这种薄的吸收层可以允许PV装置中更高的效率和灵活性。

公开(公告)号：WO2019245620A1

公开(公告)日：2019-12-26

申请号：PCT/US2019/023607

申请日：2019-03-22

Applicant: ALTA DEVICES, INC.

Inventor： JAIN, Nikhil ,  KAYES, Brendan ,  HE, Gang

IPC: H01L31/18 ,  H01L31/0304 ,  H01L31/0693 ,  H01L31/0735

Abstract: A thin film, flexible optoelectronic device is described. In an aspect, a method for fabricating a single-junction optoelectronic device includes forming a p-n structure on a substrate, the p-n structure including a semiconductor having a lattice constant that matches a lattice constant of substrate, the semiconductor including a dilute nitride, and the single-junction optoelectronic device including the p-n structure; and separating the single-junction optoelectronic device from the substrate. The dilute nitride includes one or more of GaInNAs, GaInNAsSb, alloys thereof, or derivatives thereof.