Abstract:
There is provided a method for manufacturing a wiring substrate with a through electrode, the method including providing a device substrate having a through hole, an opening of the through hole being blocked by a current supply path and the wiring substrate including the device substrate as a core layer with the through electrode; and disposing a first metal in the through hole to form the through electrode by electroplating, in a depth direction of the through hole, using the current supply path.
Abstract:
A semiconductor package for a side by side die configuration may include a substrate having a cavity, a bridge interposer positioned within the cavity and having an active side facing active sides of a first die and a second die and partially horizontally overlapping the first die and the second die to provide an interconnection between the first die and the second die, and a thermal element attached to backsides of the first die and the second die to provide a heat path and heat storage for the first die and the second die.
Abstract:
Generally discussed herein are systems and methods that can include a stretchable and bendable device. According to an example a method can include (1) depositing a first elastomer material on a panel, (2) laminating trace material on the elastomer material, (3) processing the trace material to pattern the trace material into one or more traces and one or more bond pads, (4) attaching a die to the one or more bond pads, or (5) depositing a second elastomer material on and around the one or more traces, the bonds pads, and the die to encapsulate the one or more traces and the one or more bond pads in the first and second elastomer materials.
Abstract:
A thin sheet (20) disposed on a carrier (10) via a surface modification layer (30) to form an article (2), wherein the article may be subjected to high temperature processing, as in FEOL semiconductor processing, not outgas and have the thin sheet maintained on the carrier without separation therefrom during the processing, yet be separated therefrom upon room temperature peeling force that leaves the thinner one of the thin sheet and carrier intact. Interposers (56) having arrays (50) of vias (60) may be formed on the thin sheet, and devices (66) formed on the interposers. Alternatively, the thin sheet may be a substrate on which semiconductor circuits are formed during FEOL processing.
Abstract:
An interposer is fabricated from a lamina. A donor body is provided, ions are implanted into a first surface of the donor body to define a cleave plane, a temporary carrier is separably contacted to the donor body, and the lamina is cleaved from the donor body. The lamina has front surface and a back surface, with a thickness from the front surface to the back surface. A via hole is formed in the lamina, where the via hole extends through the thickness of the lamina. The temporary carrier is removed from the lamina, and the lamina may be fabricated into an interposer for three-dimensional integrated circuit packages.
Abstract:
A method of making a multi-chip module may include forming an interconnect layer stack on a sacrificial substrate. The interconnect layer stack may include patterned electrical conductor layers and a dielectric layer between adjacent patterned electrical conductor layers. The method may further include electrically coupling a first integrated circuit (IC) die in a flip chip arrangement to an uppermost patterned electrical conductor layer, and forming a first underfill dielectric layer between the first IC die and adjacent portions of the interconnect layer stack. The method further may include removing the sacrificial substrate to expose a lowermost patterned electrical conductor layer, and electrically coupling at a second integrated circuit die in a flip chip arrangement to the lowermost patterned electrical conductor layer. Still further, the method may include forming a second underfill dielectric layer between the second IC die and adjacent portions of the interconnect layer stack.
Abstract:
For a method for producing a flexible circuit configuration in the form of a layer sequence of at least one insulating layer and at least one conductive layer, typically multiple insulating layers (N1, N2, N3, NF) and multiple structured conductive layers (L1, L2), the layer sequence for the flexible circuit configuration is deposited on a rigid substrate so that the adhesion of the layer sequence with respect to the substrate is less in an inner area, in which at least one, preferably multiple flexible circuit configurations are created, than in an edge area (RB) which surrounds the inner area (ZB). An intermediate layer can advantageously be deposited for this purpose in the edge area, which causes a stronger adhesion of the layer sequence over the edge area than the inner area, which is not provided with an intermediate layer.
Abstract:
Embodiments of the present invention describe a semiconductor package having an embedded die. The semiconductor package comprises a coreless substrate that contains the embedded die. The semiconductor package provides die stacking or package stacking capabilities. Furthermore, embodiments of the present invention describe a method of fabricating the semiconductor package that minimizes assembly costs.