公开(公告)号：WO1989007666A1

公开(公告)日：1989-08-24

申请号：PCT/US1989000225

申请日：1989-01-20

Applicant: NORTHWESTERN UNIVERSITY

Inventor： NORTHWESTERN UNIVERSITY ,  MARKS, Tobin, J. ,  DAHMEN, Klaus, H.

IPC: C23C16/18

CPC classification number: C07C45/77 ,  C07C49/92 ,  C07F1/005 ,  C07F3/003 ,  C07F5/003 ,  C23C16/408 ,  H01L39/2441

Abstract: Metal organic copper complexes, lanthanide complexes, and barium complexes are sublimed (26, 27, 28) and caused to flow passed a heated substrate (29) where they are deposited and oxidized to form a high Tc superconducting film of the formula MBa2Cu3O7- delta where M is an element such a yttrium or a lanthanide element.

Abstract translation: 金属有机铜络合物，镧系元素络合物和钡络合物升华（26,27,28），并使其流过加热的衬底（29），在衬底上沉积和氧化，形成式为MBa2Cu3O7-δ的高Tc超导膜 其中M是诸如钇或镧系元素的元素。

公开(公告)号：WO1988010323A1

公开(公告)日：1988-12-29

申请号：PCT/JP1988000574

申请日：1988-06-15

Applicant: KAWASAKI STEEL CORPORATION ,  TAKAHASHI, Makoto; ,  UMINO, Hiroshi;

Inventor： KAWASAKI STEEL CORPORATION

IPC: C23C16/18

CPC classification number: H01L39/126 ,  C23C16/408 ,  H01L39/2441 ,  Y10S505/734

Abstract: A thin superconductor film is formed by mixing a gas of a complex compound between an alkaline earth metal and a partially halogen-substituted organometallic compound, a gas of an organometallic compound (halide) of a group IIIa element, and a gas of an organometallic compound (halide) of a transition metal with each other, thermally decomposing this mixture under a given oxygen partial pressure, and depositing a composite of oxides of the above-described metals on a base. In this process a novel complex compound between an organic compound having the structure (I) as the ligand and having 3 or 6 halogen atoms substituting protons and an alkali metal is preferably used as the complex compound.

公开(公告)号：WO2014200585A2

公开(公告)日：2014-12-18

申请号：PCT/US2014025843

申请日：2014-03-13

Applicant: UNIV HOUSTON SYSTEM

Inventor： MAJKIC GORAN ,  SELVAMANICKAM VENKAT

IPC: B05D7/24

CPC classification number: H01B12/06 ,  C23C16/0209 ,  C23C16/408 ,  C23C16/448 ,  C23C16/545 ,  H01B13/00 ,  H01B13/0026 ,  H01B13/008 ,  H01L39/2441

Abstract: An MOCVD system fabricates high quality superconductor tapes with variable thicknesses. The MOCVD system can include a gas flow chamber between two parallel channels in a housing. A substrate tape is heated and then passed through the MOCVD housing such that the gas flow is perpendicular to the tape's surface. Precursors are injected into the gas flow for deposition on the substrate tape. In this way, superconductor tapes can be fabricated with variable thicknesses, uniform precursor deposition, and high critical current densities.

Abstract translation: MOCVD系统制造出具有可变厚度的高品质超导体磁带。 MOCVD系统可以在壳体中的两个平行通道之间包括气流室。 衬底带被加热然后通过MOCVD壳体，使得气流垂直于带的表面。 将前体注入到气流中以沉积在基片带上。 以这种方式，可以制造具有可变厚度，均匀的前体沉积和高临界电流密度的超导带。

公开(公告)号：WO2006137873A3

公开(公告)日：2009-02-19

申请号：PCT/US2005033448

申请日：2005-09-16

Applicant: SUPERPOWER INC ,  SELVAMANICKAM VENKAT

Inventor： SELVAMANICKAM VENKAT

IPC: H01L39/24 ,  C23C16/40 ,  C23C16/455 ,  C23C16/54

CPC classification number: H01L39/2441 ,  C23C16/408 ,  C23C16/4557 ,  C23C16/45572 ,  C23C16/481 ,  C23C16/545 ,  Y10S505/732 ,  Y10T29/49014

Abstract: A CVD apparatus capable of substantially simultaneously processing multiple portions of at least one substrate or substantially simultaneously processing portions of multiple substrates or substantially simultaneously processing multiple portions of at least one substrate and portions of multiple substrates, the CVD apparatus is described. The CVD apparatus includes a reactor, at least one substrate heater, at least one precursor supply system, at least one precursor injector, optionally, communicating with at least one temperature regulated manifold, at least one reactants mixer, and, optionally, at least one controller communicating with at least one substrate heater, the at least one precursor supply system, the at least one precursor injector, the at least one temperature regulated manifold, and combinations thereof.

Abstract translation: 一种能够基本上同时处理至少一个基板的多个部分或基本上同时处理多个基板的部分或基本上同时处理至少一个基板和多个基板的多个部分的多个部分的CVD装置，描述了CVD装置。 CVD装置包括反应器，至少一个基板加热器，至少一个前体供应系统，至少一个前体喷射器，任选地与至少一个温度调节的歧管连通，至少一个反应物混合器，以及任选的至少一个 控制器与至少一个衬底加热器，所述至少一个前体供应系统，所述至少一个前体喷射器，所述至少一个温度调节歧管及其组合相连通。

公开(公告)号：WO2006022860A3

公开(公告)日：2007-02-01

申请号：PCT/US2005009561

申请日：2005-03-22

Applicant: SUPERPOWER INC ,  LEE HEE-GYOUN ,  SELVAMANICKAM VENKAT

Inventor： LEE HEE-GYOUN ,  SELVAMANICKAM VENKAT

IPC: H01L39/24 ,  C23C16/00 ,  C23C16/40 ,  C23C16/448 ,  C23C16/455 ,  C23C16/54 ,  G01N27/407

CPC classification number: C23C16/45572 ,  C23C16/408 ,  C23C16/4481 ,  C23C16/4557 ,  C23C16/545 ,  H01L39/2441 ,  Y10S505/726 ,  Y10T29/49014

Abstract: A chemical vapor deposition (CVD) apparatus including a reactor, at least one substrate heater, at least one precursor supply system, at least one precursor injector, and at least one precursor composition monitor. The precursor supply system includes at least one precursor source, at least one a delivery mechanism including at least one assist vehicle, at least one vaporizer for vaporizing a precursor provided by at least the at least one precursor source, and at least one vehicle for transporting at least the vaporized precursor from the precursor supply to the precursor injector of the CVD apparatus.

Abstract translation: 一种化学气相沉积（CVD）装置，包括反应器，至少一个基板加热器，至少一个前体供应系统，至少一个前体喷射器和至少一个前体组合物监测器。 前体供应系统包括至少一个前体源，至少一个输送机构，其包括至少一个辅助载体，至少一个用于蒸发由至少一个前体源提供的前体的蒸发器，以及至少一个用于输送的载体 至少从前体供应物蒸发的前体至CVD设备的前体注入器。

公开(公告)号：WO2005062762A3

公开(公告)日：2006-07-06

申请号：PCT/US2004041754

申请日：2004-12-14

Applicant: SUPERPOWER INC

Inventor： SELVAMANICKAM VENKAT

IPC: B05D5/12 ,  C23C16/00 ,  C23C16/40

CPC classification number: C23C16/408 ,  Y10T29/49014

Abstract: In a chemical vapor deposition process simple precursors such as a rare earth nitrate or acetate, Ba-nitrate or acetate and Cu-nitrate or acetate are dissolved in an appropriate solvent, preferably water, to form a solution, nebulized into a fine mist and applied to a substrate.

Abstract translation: 在化学气相沉积工艺中，将简单的前体例如稀土硝酸盐或乙酸盐，硝酸钡或乙酸盐和硝酸铜或硝酸铜溶于适当的溶剂，优选水中形成溶液，雾化成细雾并施加 到基底。

公开(公告)号：WO2005081658A3

公开(公告)日：2006-01-12

申请号：PCT/US2004016639

申请日：2004-05-25

Applicant: SUPERPOWER INC

Inventor： SELVAMANICKAM VENKAT ,  LEE HEE-GYOUN

IPC: C04B35/45 ,  C23C16/00 ,  C23C16/40 ,  C23C16/455 ,  C23C16/54 ,  H01L39/12 ,  H01L39/24 ,  B05B13/02 ,  B32B9/00

CPC classification number: H01L39/2441 ,  C04B35/4508 ,  C04B35/6264 ,  C04B2235/3215 ,  C04B2235/3224 ,  C04B2235/3225 ,  C04B2235/6584 ,  C04B2235/79 ,  C23C16/408 ,  C23C16/45523 ,  C23C16/54 ,  H01L39/128 ,  Y02T50/67

Abstract: An OCVD apparatus and process for producing multi-layer HTS-coated tapes with increased current capacity which includes multiple liquid precursor sources, each having an associated pump and vaporizer, the outlets of which feed a multiple compartment showerhead apparatus within an MOCVD reactor. The multiple compartment showerhead apparatus is located in close proximity to an associated substrate heater which together define multiple deposition sectors in a deposition zone.

Abstract translation: 一种用于生产具有增加的电流容量的多层HTS涂覆带的OCVD装置和方法，其包括多个液体前体源，每个液体前体源具有相关联的泵和蒸发器，其出口在MOCVD反应器内供给多室喷淋头装置。 多隔室喷头装置位于紧邻相关联的基板加热器，其一起在沉积区域中限定多个沉积扇区。

公开(公告)号：WO2005062762A2

公开(公告)日：2005-07-14

申请号：PCT/US2004/041754

申请日：2004-12-14

Applicant: SUPERPOWER, INC.

Inventor： SELVAMANICKAM, Venkat

IPC: C23C16/40

CPC classification number: C23C16/408 ,  Y10T29/49014

Abstract: In a chemical vapor deposition process simple precursors such as a rare earth nitrate or acetate, Ba-nitrate or acetate and Cu-nitrate or acetate are dissolved in an appropriate solvent, preferably water, to form a solution, nebulized into a fine mist and applied to a substrate.

Abstract translation: 在化学气相沉积工艺中，将简单的前体例如稀土硝酸盐或乙酸盐，硝酸钡或乙酸盐和硝酸铜或硝酸铜溶于适当的溶剂，优选水中以形成溶液，雾化成细雾并施加 到基底。

公开(公告)号：WO2004012277A2

公开(公告)日：2004-02-05

申请号：PCT/US2003/022797

申请日：2003-07-23

Applicant: METAL OXIDE TECHNOLOGIES, INC.

Inventor： IGNATIEV, Alex ,  ZHANG, Xin ,  ZENG, Jian, Ming ,  LIU, Jiashu ,  CHOU, Penchu ,  CASTELLANI, Louis, D.

IPC: H01L39/00

CPC classification number: H01L39/2438 ,  C04B35/45 ,  C04B2235/3208 ,  C04B2235/3215 ,  C04B2235/3284 ,  C04B2235/3286 ,  C23C16/408 ,  C23C16/545 ,  H01L39/248

Abstract: The invention continuously deposits materials used to grow a thin film onto a moving tape. The invention preferably uses a pay-out reel and take-up reel to respectively dispense and spool the tape substrate at a constant rate. The invention preferably uses a series of stages to form the thin film on the tape, and includes at least one reactor or reaction chamber to deposit one or more materials onto the tape substrate that is used to form the superconductor layer, and one or more chambers to deposit buffer layers between the film and the metal tape substrate or between layers of film, as well as for the deposition of coating layers. The invention also preferably uses transition chambers between the stages to isolate each stage from the other stages.

Abstract translation: 本发明将用于生长薄膜的材料连续地沉积到移动的带上。 本发明优选地使用发放卷轴（401）和卷取卷轴（406）分别以恒定速率分配和卷绕带基板（408）。 本发明优选使用一系列阶段在带上形成薄膜，并且包括至少一个反应室或反应室（601c），以将一种或多种材料沉积到用于形成超导体层的带基材上，一个 或更多的室（601a，601b）以在膜和金属带基材之间或膜层之间沉积缓冲层，以及用于沉积涂层。 本发明还优选地在级之间使用过渡室（701）以将每个级与其它级隔离。

公开(公告)号：WO02056420A2

公开(公告)日：2002-07-18

申请号：PCT/US2001/041529

申请日：2001-08-03

IPC: C23C16/40 ,  C23C16/448 ,  C23C16/455 ,  H01L39/14 ,  H01L39/24 ,  H01R

CPC classification number: H01L39/143 ,  C23C16/408 ,  C23C16/4481 ,  H01L39/2441 ,  Y10T29/49014

Abstract: Percursor gases enter a vaporizer (10) including heating means (30) through tubing (20) and (50) which form nozzle (40) for forming an HTSC coating.

Abstract translation: 气体气体通过管道（20）和（50）进入包括加热装置（30）的蒸发器（10）和（50），其形成用于形成HTSC涂层的喷嘴（40）。