公开(公告)号：WO2023278129A1

公开(公告)日：2023-01-05

申请号：PCT/US2022/033187

申请日：2022-06-13

Applicant: APPLIED MATERIALS, INC.

Inventor： DURAND, William J. ,  CHOI, Kenric ,  KWONG, Garry K.

IPC: C23C16/448 ,  H01L21/67 ,  C23C16/4481 ,  C23C16/45561

Abstract: Ampoules for a semiconductor manufacturing precursors and methods of use are described. The ampoules include a container with an inlet port and an outlet port. Alternating first and second elongate walls in the container are arranged to define longitudinal flow channels containing a precursor material, and alternating first and second passages between each of the longitudinal flow channels permitting fluid communication between adjacent longitudinal flow channels, wherein the first passages are located in a lower portion of the precursor cavity and the second passages are located an upper portion of the cavity. A flow path is defined by the longitudinal flow channels and the passages, through which a carrier gas flows in contact with the precursor material. In one or more embodiments, the precursor material is a solid.

公开(公告)号：WO2022265826A1

公开(公告)日：2022-12-22

申请号：PCT/US2022/030549

申请日：2022-05-23

Applicant: APPLIED MATERIALS, INC.

Inventor： WEWALA GONNAGAHADENIYAGE, Shiyan Akalanka Jayanath ,  CHOCKALINGAM, Ashwin ,  FUNG, Jason G. ,  KAKIREDDY, Veera Raghava Reddy ,  BARADANAHALLI KENCHAPPA, Nandan ,  JAWALI, Puneet Narendra ,  BAJAJ, Rajeev

IPC: B24B37/24 ,  B24B37/26 ,  H01L21/67

Abstract: Embodiments herein generally relate to polishing pads and methods of forming polishing pads. A polishing pad includes a plurality of polishing elements and a plurality of grooves disposed between the polishing elements. Each polishing element includes a plurality of individual posts. Each post includes an individual surface that forms a portion of a polishing surface of the polishing pad and one or more sidewalls extending downwardly from the individual surface. The sidewalls of the plurality of individual posts define a plurality of pores disposed between the posts.

公开(公告)号：WO2022261216A1

公开(公告)日：2022-12-15

申请号：PCT/US2022/032686

申请日：2022-06-08

Applicant: APPLIED MATERIALS, INC.

Inventor： DEEPAK, Nitin ,  CHAKRABORTY, Tapash ,  GORADIA, Prerna Sonthalia ,  SIVARAMAKRISHNAN, Visweswaren ,  BAGUL, Nilesh Chimanrao ,  UPADHYE, Bahubali S.

IPC: C23C16/44 ,  C09K13/00

Abstract: Methods for etching alkali metal compounds are disclosed. Some embodiments of the disclosure expose an alkali metal compound to an alcohol to form a volatile metal alkoxide. Some embodiments of the disclosure expose an alkali metal compound to a β-diketone to form a volatile alkali metal β-diketonate compound. Some embodiments of the disclosure are performed in-situ after a deposition process. Some embodiments of the disclosure provide methods which selectively etch alkali metal compounds.

公开(公告)号：WO2022256410A1

公开(公告)日：2022-12-08

申请号：PCT/US2022/031774

申请日：2022-06-01

Applicant: APPLIED MATERIALS, INC.

Inventor： BHATNAGAR, Kunal ,  VERGHESE, Mohith

IPC: C23C16/455 ,  C23C16/02 ,  C23C16/04 ,  C23C16/14 ,  C23C16/40 ,  C23C16/32 ,  H01L21/285 ,  H01L21/02

Abstract: A deposition method demonstrating a slower growth rate is disclosed. Some embodiments of the disclosure provide CVD methods which utilize a halide-containing growth inhibitor as a co-reactant with a metal halide precursor and a reactant. Some embodiments of the disclosure relate to CVD and ALD methods comprising exposure of the substrate surface to a pretreatment comprising a halide-containing growth inhibitor.

公开(公告)号：WO2022256176A1

公开(公告)日：2022-12-08

申请号：PCT/US2022/029899

申请日：2022-05-18

Applicant: APPLIED MATERIALS, INC.

Inventor： LIN, Yung-chen ,  LANG, Chi-I ,  HWANG, Ho-yung

IPC: H01L21/3213 ,  H01L21/02 ,  H01L21/311

Abstract: Embodiments of the present disclosure generally relate to methods for etching materials. In one or more embodiments, the method includes positioning a substrate in a process volume of a process chamber, where the substrate includes a metallic ruthenium layer disposed thereon, and exposing the metallic ruthenium layer to an oxygen plasma to produce a solid ruthenium oxide on the metallic ruthenium layer and a gaseous ruthenium oxide within the process volume. The method also includes exposing the solid ruthenium oxide to a secondary plasma to convert the solid ruthenium oxide to either metallic ruthenium or a ruthenium oxychloride compound. The metallic ruthenium is in a solid state on the metallic ruthenium layer or the ruthenium oxychloride compound is in a gaseous state within the process volume.

公开(公告)号：WO2022256138A1

公开(公告)日：2022-12-08

申请号：PCT/US2022/028280

申请日：2022-05-09

Applicant: APPLIED MATERIALS, INC.

Inventor： HARTWIG, Robert ,  HUDERI SOMANNA, Dinkesh ,  WEST, Brian T.

IPC: H01L21/67 ,  H01L21/687 ,  C23C14/50 ,  C23C14/54

Abstract: Methods and apparatus for processing a substrate are provided herein. For example, a cooling apparatus for use with a substrate support of a processing chamber comprises a heat exchanger, a manifold assembly comprising a first input configured to connect to an output of the heat exchanger, a second input configured to connect to a first coolant supply configured to supply a first coolant, a first output configured to connect to the substrate support of the processing chamber, and a second output configured to connect to an input of the heat exchanger, a gas input configured to connect to a second coolant supply that is configured to supply a second coolant that is different from the first coolant to the substrate support, a first three-way valve connected between the first output of the manifold assembly and the substrate support and connected between the gas input and the substrate support, and a controller configured to control supplying one of the first coolant or the second coolant during operation.

公开(公告)号：WO2022256086A1

公开(公告)日：2022-12-08

申请号：PCT/US2022/024678

申请日：2022-04-13

Applicant: APPLIED MATERIALS, INC.

Inventor： YANG, Yang ,  GUO, Yue ,  RAMASWAMY, Kartik

IPC: H01J37/32

Abstract: Embodiments provided herein generally include apparatus, plasma processing systems and methods for generation of a waveform for plasma processing of a substrate in a processing chamber. One embodiment includes a waveform generator having a voltage source selectively coupled to an output node, where the output node is configured to be coupled to an electrode disposed within a processing chamber, and where the output node is selectively coupled to a ground node. The waveform generator may also include a radio frequency (RF) signal generator, and a first filter coupled between the RF signal generator and the output node.

公开(公告)号：WO2022251266A1

公开(公告)日：2022-12-01

申请号：PCT/US2022/030791

申请日：2022-05-24

Applicant: APPLIED MATERIALS, INC.

Inventor： WONG, Justin ,  CHATOW, Ehud

IPC: H01L21/67

Abstract: Wafers that begin as flat surfaces during a semiconductor manufacturing process may become warped or bowed as layers and features are added to an underlying substrate. This warpage may be detected between manufacturing processes by rotating the wafer adjacent to a displacement sensor. The displacement sensor may generate displacement data relative to a baseline measurement to identify areas of the wafer that bow up or down. The displacement data may then be mapped to locations on the wafer relative to an alignment feature. This mapping may then be used to adjust parameters in subsequent semiconductor processes, including adjusting how a carrier head on a polishing process holds or applies pressure to the wafer as it is polished.

公开(公告)号：WO2022251074A1

公开(公告)日：2022-12-01

申请号：PCT/US2022/030354

申请日：2022-05-20

Applicant: APPLIED MATERIALS, INC.

Inventor： WALLACE, Jay R. ,  RUFFELL, Simon ,  ANGLIN, Kevin R. ,  ROCKWELL, Tyler ,  CAMPBELL, Christopher ,  DANIELS, Kevin M. ,  HERTEL, Richard J. ,  RYAN, Kevin T.

IPC: H01L21/687 ,  H01J37/32

Abstract: A substrate holder assembly including a substrate platen, the substrate platen disposed to support a substrate at a substrate position, a halo ring, the halo ring being disposed around the substrate position, and an outer halo being disposed around the halo ring and defining a first aperture, wherein the outer halo is disposed to engage the halo ring, the halo ring being disposed at least partially within the first aperture, the halo ring defining a second aperture, concentrically positioned within the first aperture, wherein the outer halo and the halo ring are formed at least partially of silicon, silicon carbide, doped silicon, quartz, and ceramic.

公开(公告)号：WO2022250948A1

公开(公告)日：2022-12-01

申请号：PCT/US2022/028449

申请日：2022-05-10

Applicant: APPLIED MATERIALS, INC.

Inventor： SCUDDER, Lance, A. ,  CHATTERJEE, Sukti ,  ISHIKAWA, David, Masayuki ,  MELNIK, Yuriy, V. ,  SINGH, Vibhas

IPC: C23C16/50 ,  C23C16/30 ,  C23C16/02 ,  C23C16/40 ,  C23C16/455 ,  A61M5/31 ,  A61M5/315 ,  B01L3/00

Abstract: Exemplary methods of forming a coating of material on a substrate may include forming a plasma of a first precursor and an oxygen-containing precursor. The first precursor and the oxygen-containing precursor may be provided in a first flow rate ratio. The methods may include depositing a first layer of material on the substrate. While maintaining the plasma, the methods may include adjusting the first flow rate ratio to a second flow rate ratio. The methods may include depositing a second layer of material on the substrate.