公开(公告)号：WO2022250824A1

公开(公告)日：2022-12-01

申请号：PCT/US2022/026291

申请日：2022-04-26

Applicant: APPLIED MATERIALS, INC.

Inventor： BANGALORE UMESH, Suhas ,  RIKER, Martin Lee

IPC: C23C14/35 ,  C23C14/54 ,  C23C14/50 ,  C23C14/22 ,  H01J37/34

Abstract: A plasma vapor deposition (PVD) chamber used for depositing material includes an apparatus for influencing ion trajectories during deposition in an edge region of a substrate. The apparatus includes a reflector assembly that surrounds a substrate support and is configured to reflect heat to the substrate during reflowing of material deposited on the substrate and a plurality of permanent magnets embedded in the reflector assembly that are configured to influence ion trajectories on the edge region of the substrate during deposition processes, the plurality of permanent magnets are spaced symmetrically around the reflector assembly.

公开(公告)号：WO2022250802A1

公开(公告)日：2022-12-01

申请号：PCT/US2022/024756

申请日：2022-04-14

Applicant: APPLIED MATERIALS, INC.

Inventor： SHI, Tiefeng ,  MILLER, Keith A. ,  FU, Gang

IPC: H01J37/32 ,  H03H7/38 ,  G01R29/08 ,  H01J37/32146 ,  H01J37/32183 ,  H01L21/02266 ,  H03H7/383 ,  H03H7/40

Abstract: Methods and apparatus for processing a substrate are provided herein. For example, a matching network for use with a plasma processing chamber comprises an input configured to connect to a power source, an output configured to connect to the plasma processing chamber, a V/I sensor connected between the input of the matching network and an output of the power source, a load capacitor connected in parallel with at least one capacitor connected in series with a load switch, a tuning capacitor connected in series with at least one capacitor connected in parallel with a tuning switch, and a multiple level pulsing phase/magnitude module connected to the V/I sensor and to a multiple level pulsing synchronization switch driver connected to each of the load switch and the tuning switch for activating at least one of the load switch and the tuning switch in response to a control signal, which is based on a V/I sensor measurement, received from the power source.

公开(公告)号：WO2022245716A1

公开(公告)日：2022-11-24

申请号：PCT/US2022/029416

申请日：2022-05-16

Applicant: APPLIED MATERIALS, INC.

Inventor： CONG, Zhepeng ,  SHENG, Tao ,  LUAN, Xinning ,  CHOO, Enle ,  MORADIAN, Ala

IPC: G01B11/06 ,  C30B25/02 ,  C30B25/16 ,  C30B35/00 ,  H01L21/67

Abstract: Embodiments disclosed herein generally relate to in situ monitoring of film growth in processing chambers, In some examples, a sensor assembly for a processing chamber includes a sensor tube including silicon carbide and having an optical path therein and a sensor window including crystalline silicon carbide and having a proximal side coupled to a distal end of the sensor tube. The sensor window covers the optical path, and a distal side of the sensor window facing away from the proximal side is perpendicular to a center axis of the optical path.

公开(公告)号：WO2022242879A1

公开(公告)日：2022-11-24

申请号：PCT/EP2021/063674

申请日：2021-05-21

Applicant: APPLIED MATERIALS, INC. ,  CROUCH, Tarquin Lucas

Inventor： CROUCH, Tarquin Lucas

IPC: C23C14/56 ,  C23C16/54 ,  B32B15/04 ,  B32B18/00 ,  B32B37/00 ,  B65H18/20 ,  B65D65/00 ,  C08J5/18 ,  C23C16/56 ,  C23C14/58

Abstract: According to one aspect of the present disclosure, an apparatus (10, 20) for manufacturing a composite film (104) is provided. The composite film (104) includes a first film (101), at least one deposited layer (101a) and at least one second film (102, 103) having a lamination layer. The apparatus (10, 20) includes a vacuum chamber (400), a deposition apparatus (200) for depositing the at least one deposited layer (101a) on the first film (101), and a laminating apparatus (300) for laminating the at least one second film (102, 103) to the first film (101) such that the lamination layer of the at least one second film faces the at least one deposited layer (101a), wherein the deposition apparatus (200) and the laminating apparatus (300) are provided within the vacuum chamber (400). According to a further aspect of the present disclosure, a method (30) for manufacturing a composite film is provided, including providing (32) a first film, depositing (33) at least one deposited layer on the first film, providing (34) at least one second film having a lamination layer, and laminating (36) the at least one second film to the first film such that the lamination layer of the at least one second film faces the at least one deposited layer, wherein the depositing (33) and the laminating (36) are performed in the same vacuum chamber. According to a further aspect of the present disclosure, a composite film manufactured by the apparatus and using the method according to aspects of the present disclosure is provided.

公开(公告)号：WO2022240651A1

公开(公告)日：2022-11-17

申请号：PCT/US2022/027892

申请日：2022-05-05

Applicant: APPLIED MATERIALS, INC.

Inventor： CUI, Linying ,  ROGERS, James ,  DORF, Leonid

IPC: H01J37/32 ,  H01L21/683 ,  H01J37/32568 ,  H01J37/32577 ,  H01J37/32697 ,  H01J37/32715 ,  H01J37/32935 ,  H01J37/3299 ,  H01L21/6833

Abstract: Embodiments of the present disclosure relate to a system for pulsed direct- current (DC) biasing and clamping a substrate. In one embodiment, the system includes a plasma chamber having an electrostatic chuck (ESC) for supporting a substrate. An electrode is embedded in the ESC and is electrically coupled to a biasing and clamping network. The biasing and clamping network includes at least a shaped DC pulse voltage source and a clamping network. The clamping network includes a DC source and a diode, and a resistor. The shaped DC pulse voltage source and the clamping network are connected in parallel. The biasing and clamping network automatically maintains a substantially constant clamping voltage, which is a voltage drop across the electrode and the substrate when the substrate is biased with pulsed DC voltage, leading to improved clamping of the substrate.

公开(公告)号：WO2022240630A1

公开(公告)日：2022-11-17

申请号：PCT/US2022/027609

申请日：2022-05-04

Applicant: APPLIED MATERIALS, INC.

Inventor： KEMP, Michael David-Scott ,  FU, Jinxin

IPC: G01N21/95 ,  G01N21/55 ,  G01M11/02 ,  G06T2207/30148 ,  G06T7/0004 ,  H04N23/55 ,  H04N23/56

Abstract: Embodiments described herein relate to an inspection system for illumination of optical devices. The inspection system includes a stage, a focusing lens, a light source, a reflective surface, and a camera. The inspection system is operable to provide a light to a substrate. The substrate is positioned on the inspection system such that an edge of the substrate is exposed. The inspection system focuses light to the edge such that the light propagates through the substrate. The light is coupled out of the substrate, illuminating one or more optical devices disposed on the substrate. The illumination allows the camera to capture images to be inspected. The images are inspected to detect defects of the substrate.

公开(公告)号：WO2022240567A1

公开(公告)日：2022-11-17

申请号：PCT/US2022/025772

申请日：2022-04-21

Applicant: APPLIED MATERIALS, INC.

Inventor： ISHIKAWA, Tetsuya ,  SRINIVASAN, Swaminathan T. ,  BAUER, Matthias ,  SUBBANNA, Manjunath ,  MORADIAN, Ala ,  SHAH, Kartik Bhupendra ,  SANCHEZ, Errol Antonio C. ,  RICE, Michael R. ,  REIMER, Peter ,  SHULL, Marc

IPC: C30B25/14 ,  C30B25/12 ,  C30B25/10 ,  C23C16/44 ,  C23C16/48 ,  C30B25/165 ,  H01L21/67115 ,  H01L21/6719

Abstract: Embodiments described herein include processes and apparatuses relate to epitaxial deposition. A method for epitaxially depositing a material is provided and includes positioning a substrate on a substrate support surface of a susceptor within a process volume of a chamber body, where the process volume contains upper and lower chamber regions. The method includes flowing a process gas containing one or more chemical precursors from an upper gas inlet on a first side of the chamber body, across the substrate, and to an upper gas outlet on a second side of the chamber body, flowing a purge gas from a lower gas inlet on the first side of the chamber body, across the lower surface of the susceptor, and to a lower gas outlet on the second side of the chamber body, and maintaining a pressure of the lower chamber region greater than a pressure of the upper chamber region.

公开(公告)号：WO2022240536A1

公开(公告)日：2022-11-17

申请号：PCT/US2022/024463

申请日：2022-04-12

Applicant: APPLIED MATERIALS, INC.

Inventor： PARKHE, Vijay D.

IPC: H01L21/683 ,  H01L21/67 ,  F25D19/006 ,  H01J2237/2007 ,  H01J2237/334 ,  H01J37/32724 ,  H01L21/6833

Abstract: Embodiments of the present disclosure generally relate to a cryogenic micro-zone connection assembly for a substrate support assembly suitable for use in cryogenic applications. In one or more embodiments, the cryogenic micro-zone connection assembly has a first end having a micro-zone connector. A second end having a socket connection. A flange disposed between the micro-zone connector and the socket connection. And a wiring harness coupled at the first end to the micro-zone connector, extending through the flange and coupled at the second end to the socket connection.

公开(公告)号：WO2022240503A1

公开(公告)日：2022-11-17

申请号：PCT/US2022/024105

申请日：2022-04-08

Applicant: APPLIED MATERIALS, INC.

Inventor： CEN, Xi ,  ZHAO, Mingrui ,  WANG, Peiqi ,  CHAN, Wei Min ,  WU, Kai ,  LUO, Yi ,  WU, Liqi

IPC: H01L21/285 ,  H01L21/768 ,  C23C16/02 ,  C23C16/04 ,  C23C16/06 ,  C23C16/52 ,  C23C16/0272 ,  C23C16/045 ,  C23C16/14 ,  C23C16/34 ,  C23C16/45536 ,  C23C16/45544 ,  C23C16/45557 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/76843 ,  H01L21/76856 ,  H01L21/76876 ,  H01L21/76879 ,  H01L23/53266

Abstract: Embodiments herein are generally directed to methods of forming high aspect ratio metal contacts and/or interconnect features, e.g., tungsten features, in a semiconductor device. Often, conformal deposition of tungsten in a high aspect ratio opening results in a seam and/or void where the outward growth of tungsten from one or more walls of the opening meet. Thus, the methods set forth herein provide for a desirable bottom up tungsten bulk fill to avoid the formation of seams and/or voids in the resulting interconnect features, and provide an improved contact metal structure and method of forming the same. In some embodiments, an improved overburden layer or overburden layer structure is formed over the field region of the substrate to enable the formation of a contact or interconnect structure that has improved characteristics over conventionally formed contacts or interconnect structures.

公开(公告)号：WO2022236006A1

公开(公告)日：2022-11-10

申请号：PCT/US2022/028006

申请日：2022-05-06

Applicant: APPLIED MATERIALS, INC.

Inventor： KALUTARAGE, Lakmal C. ,  BHUYAN, Bhaskar Jyoti ,  DANGERFIELD, Aaron ,  LIU, Feng Q. ,  SALY, Mark ,  HAVERTY, Michael

IPC: H01L21/285 ,  H01L21/32 ,  C23C16/04

Abstract: Methods of selectively depositing blocking layers on conductive surfaces over dielectric surfaces are described. In some embodiments, a 4-8 membered substituted heterocycle is exposed to a substrate to selectively form a blocking layer. In some embodiments, a layer is selectively deposited on the dielectric surface after the blocking layer is formed. In some embodiments, the blocking layer is removed.