摘要:
The present invention relates to a new process for the production of a solid oxide electrolyte for fuel cells and comprises the following steps of: a) mixing powders of La203, Si02, and Ge02 by high energy milling, in a controlled atmosphere, using variable rotational speeds between 150 and 350 rpm and milling times between 15 h and 35 h, in order to obtain the desired oxyapatite phase; b) compaction of the resulting mixture either by uniaxial pressing, with pressures in the range 390-885 MPa or by cold isostatic pressing, with pressures ranging from 200 to 320 MPa, in order to obtain compacts with green densities between 65 and 75% of the theoretical density; c) sintering of the compacts in a microwave oven with frequencies between 2 and 3 GHz, power rating equal or higher than lkW, temperatures up to 1350 °C and sintering times from 5 minutes to 60 minutes, using silicon carbide susceptors, capable of absorving the microwaves from the room temperature and d) cooling of the sintered compacts in the furnace, under an argon atmosphere with a flowing rate of 2-10 L/min.
摘要:
Magnesium aluminate spinels are made by hydrothermally aging an aqueous slurry of a spinel precursor which can be (a) a mixture of boehmite alumina and a magnesium precursor, (b) an aluminum magnesium oxide or hydroxide, and (c) mixtures thereof. At least one of the aged slurries is dried to remove water and produce at least one dried spinel precursor. The dried spinel precursor is then calcined to produce the magnesium aluminate spinel.
摘要:
There have been cases where transistors formed using oxide semiconductors are inferior in reliability to transistors formed using amorphous silicon. Thus, in the present invention, a semiconductor device including a highly reliable transistor formed using an oxide semiconductor is manufactured. An oxide semiconductor film is deposited by a sputtering method, using a sputtering target including an oxide semiconductor having crystallinity, and in which the direction of the c-axis of a crystal is parallel to a normal vector of the top surface of the oxide semiconductor. The target is formed by mixing raw materials so that its composition ratio can obtain a crystal structure.
摘要:
A method of manufacturing ceramics includes: placing, on a base material, a first slurry in which a metal oxide powder is dispersed; applying a magnetic field to the first slurry to solidify the first slurry, thereby forming an under coat layer made of a first compact; placing, on the under coat layer, a second slurry containing a metal oxide powder constituting the ceramics; applying a magnetic field to the second slurry to solidify the second slurry, thereby forming a second compact to obtain a laminated body of the second compact and the under coat layer; and obtaining the ceramics made of the second compact by removing the under coat layer from the laminated body of the second compact and the under coat layer and then sintering the second compact, or sintering the laminated body of the second compact and the under coat layer and then removing the under coat layer.
摘要:
Dielectric compositions that include compound of the formula [(M') 1-χ (A') χ ][(M") 1-y-z ,(B") y (C") z ]O 3-δ (V o ) δ and protonated dielectric compositions that include a protonated dielectric compound within the formula [(M') 1-χ (A') x ](M") 1-y-z (B") y (C") z ]O 3-δ+h (V o ) δ (H-) 2h are disclosed. Composite materials that employ one or more of these dielectric compounds together with an electrolyte also are disclosed. Composite material that employs one or more of these dielectric compounds together with an electrochemally active material also are disclosed.
摘要翻译:包括式[(M')1-x(A')x] [(M“)2)的化合物的介电组合物 子> 1-YZ 子>,(B&QUOT)<子>ý子>(C&QUOT)<子>ž子>] O <子> 3-δ子>(V <子 包括在式[(M')1-x(A')n)内的质子化介电化合物的质子化介电组合物, X 子>](M&QUOT)<子> 1-YZ 子>(B&QUOT)<子>ý子>(C&QUOT)<子>ž子>] O <子> 3 -δ+ h(v≠0)δ(H - )2h。 公开了采用这些电介质化合物中的一种或多种与电解质一起的复合材料。 也公开了采用这些介电化合物中的一种或多种与电化学活性材料一起的复合材料。 p>
摘要:
A compound having a tungsten bronze structure exhibiting a high Curie temperature, good insulating resistance and mechanical quality factor, and excellent piezoelectric properties is provided. The compound contains a tungsten bronze structure oxide represented by general formula (1) : x ( BaB2O6) -y ( CaB2O6) -z { ( Bi1/2C1/2 ) B2O6 } ( 1 ) where B represents at least one of Nb and Ta; C represents at least one of Na and K; x + y + z = 1; x satisfies 0.2 = x = 0.85; y satisfies 0 = y = 0.5; and z satisfies 0
摘要翻译:提供了具有高居里温度,良好的绝缘电阻和机械品质因数以及优异的压电性能的钨青铜结构的化合物。 该化合物含有由通式(1)表示的钨青铜结构氧化物:x(BaB 2 O 6)-y(CaB 2 O 6)-z {(Bi1 / 2C1 / 2)B2O6}(1)其中B表示Nb和Ta中的至少一种 ; C表示Na和K中的至少一种; x + y + z = 1; x满足0.2 = x = 0.85; y满足0 = y = 0.5; z满足0
摘要:
Poudre constituée de :(a) plus de 92% de particules de zircone, la poudre comportant: (a2) plus de 60% de particules de zircone présentant une taille supérieure à 50 microns, au moins 90% en masse desdites particules d'agrégats de zircone contenant moins de 50% en masse de phase monoclinique; (a3) plus de 15% de particules de zircone présentant une taille inférieure à 50 µm; (b) 1 à 2% de particules de silice présentant une taille inférieure à 50 microns; (c) 0,3% à 5% de particules constituées d'un, deux ou trois oxydes choisis dans le groupe formé par CaO, MgO et Y2O3, au moins 55% en masse desdites particules additionnelles présentant une taille inférieure à 50 µm; (d) moins de 1% de particules constituées «d'autres oxydes»; la poudre étant également telle qu'elle comporte: - plus de 5% de particules d'agrégats de zircone présentant une taille supérieure à 1 mm, et - de 8 à 20% de particules matricielles de zircone présentant une taille inférieure à 15 µm et comportant, pour plus de 95% de leur masse, une phase monoclinique. Application à un réacteur pour fabriquer du noir de carbone.