公开(公告)号：WO2016184769A1

公开(公告)日：2016-11-24

申请号：PCT/EP2016/060641

申请日：2016-05-12

Applicant: X-CELEPRINT LIMITED

Inventor： BOWER, Christopher ,  MEITL, Matthew ,  GOMEZ, David ,  PREVATTE, Carl ,  BONAFEDE, Salvatore

IPC: H01L33/00 ,  H01L33/20 ,  H01L33/40 ,  H01L33/26

CPC classification number: H01L33/0079 ,  H01L21/6835 ,  H01L29/7848 ,  H01L33/007 ,  H01L33/0095 ,  H01L33/20 ,  H01L33/26 ,  H01L33/32 ,  H01L33/36 ,  H01L33/38 ,  H01L33/40 ,  H01L33/44 ,  H01L33/62 ,  H01L2221/68318 ,  H01L2221/68322 ,  H01L2221/6835 ,  H01L2221/68381 ,  H01L2933/0016 ,  H01L2933/0025 ,  H01L2933/0033

Abstract: The present invention provides structures and methods that enable the construction of micro-LED chiplets formed on a sapphire substrate that can be micro- transfer printed. Such printed structures enable low-cost, high-performance arrays of electrically connected micro-LEDs useful, for example, in display systems. Furthermore, in an embodiment, the electrical contacts for printed LEDs are electrically interconnected in a single set of process steps. In certain embodiments, formation of the printable micro devices begins while the semiconductor structure remains on a substrate. After partially forming the printable micro devices, a handle substrate is attached to the system opposite the substrate such that the system is secured to the handle substrate. The substrate may then be removed and formation of the semiconductor structures is completed. Upon completion, the printable micro devices may be micro transfer printed to a destination substrate.

Abstract translation: 本发明提供了能够构建可以被微转移印刷在蓝宝石衬底上的微型LED芯片的结构和方法。 这种印刷结构使得低成本，高性能的电连接微型LED阵列可用于例如显示系统。 此外，在一个实施例中，用于印刷的LED的电触点在单组工艺步骤中电互连。 在某些实施例中，可印刷的微器件的形成开始于半导体结构保留在衬底上。 在部分地形成可印刷的微器件之后，将手柄衬底附接到与衬底相对的系统，使得系统固定到手柄衬底。 然后可以去除衬底并完成半导体结构的形成。 完成后，可打印的微型装置可以是微转印印刷到目的基板。

公开(公告)号：WO2012055186A1

公开(公告)日：2012-05-03

申请号：PCT/CN2011/070901

申请日：2011-02-10

Applicant: 映瑞光电科技(上海)有限公司 ,  肖德元 ,  张汝京

Inventor： 肖德元 ,  张汝京

IPC: H01L33/00 ,  H01L21/20 ,  H01L33/26

CPC classification number: H01L33/385 ,  H01L21/2007 ,  H01L33/007 ,  H01L33/0079 ,  H01L33/12 ,  H01L33/62 ,  H01L33/641

公开(公告)号：WO2011025567A2

公开(公告)日：2011-03-03

申请号：PCT/US2010/037334

申请日：2010-06-03

Applicant: THE REGENTS OF THE UNIVERSITY OF MICHIGAN ,  FORREST, Stephen, R. ,  LUNT, Richard ,  KENA-COHEN, Stephane ,  LASSITER, Brian, Einstein

Inventor： FORREST, Stephen, R. ,  LUNT, Richard ,  KENA-COHEN, Stephane ,  LASSITER, Brian, Einstein

IPC: H01L33/26

CPC classification number: H01L51/001 ,  B82Y10/00 ,  H01L51/0012 ,  H01L51/0046 ,  H01L51/0053 ,  H01L51/0055 ,  H01L51/56 ,  Y02E10/549 ,  Y02P70/521

Abstract: Organic electronic devices having an organic film with a desired crystalline order and methods for making such devices is presented. An organic photosensitive device incorporating such organic films includes a first electrode layer and at least one structural templating layer disposed on the first electrode layer. A photoactive region is disposed on the at least one structural templating layer where the photoactive region includes a donor material and an acceptor material, wherein the donor material or the acceptor material is templated by the at least one structural templating layer and thus having an ordered molecular arrangement, and further wherein at least a majority of the molecules of the templated material are in a non-preferential orientation with respect to the first electrode layer. An organic light emitting device incorporating such organic films includes a first electrode layer, a second electrode layer, at least one structural templating layer disposed between the first and second electrodes, and a functional layer disposed over the at least one structural templating layer. The functional layer has its molecules in an ordered molecular arrangement, wherein at least a majority of the molecules of the functional layer are in a non-preferential orientation with respect to the layer immediately below the at least one structural templating layer.

Abstract translation: 本发明提供了具有期望结晶度的有机薄膜的有机电子器件及其制造方法。 包含这种有机膜的有机感光装置包括第一电极层和设置在第一电极层上的至少一个结构模板层。 光活性区域设置在至少一个结构模板层上，其中光活性区域包括施主材料和受主材料，其中施主材料或受主材料由至少一个结构模板层模板化，因此具有有序分子 并且其中所述模板材料的至少大部分分子相对于所述第一电极层处于非优先取向。 包含这种有机膜的有机发光器件包括第一电极层，第二电极层，设置在第一和第二电极之间的至少一个结构模板层，以及设置在至少一个结构模板层上的功能层。 功能层具有有序分子排列的分子，其中功能层的至少大部分分子相对于至少一个结构模板层正下方的层处于非优先取向。

公开(公告)号：WO2011024042A1

公开(公告)日：2011-03-03

申请号：PCT/IB2010/001974

申请日：2010-08-10

Applicant: INDIAN INSTITUTE OF TECHNOLOGY MADRAS ,  RAO, M. S. Ramachandra ,  KUMAR, E., Senthil

Inventor： RAO, M. S. Ramachandra ,  KUMAR, E., Senthil

IPC: H01L33/26

CPC classification number: H01L21/0242 ,  C23C14/086 ,  H01L21/02472 ,  H01L21/02554 ,  H01L21/02579 ,  H01L21/02581 ,  H01L21/02631 ,  H01L33/0087 ,  H01L33/285

Abstract: A method is provided for growing a stable p-type ZnO thin film with low resistivity and high mobility. The method includes providing an n-type Li-Ni co-doped ZnO target in a chamber, providing a substrate in the chamber, and ablating the target to form the thin film on the substrate.

Abstract translation: 提供一种用于生长具有低电阻率和高迁移率的稳定的p型ZnO薄膜的方法。 该方法包括在室中提供n型Li-Ni共掺ZnO靶，在室中提供衬底，并且烧蚀靶以在衬底上形成薄膜。

公开(公告)号：WO2006098540A8

公开(公告)日：2006-12-28

申请号：PCT/KR2005003084

申请日：2005-09-16

Applicant: SAMSUNG ELECTRONICS CO LTD ,  CHO KYUNG SANG ,  CHOI BYOUNG LYONG ,  KIM BYOUNG KI ,  KWON SOON JAE

Inventor： CHO KYUNG SANG ,  CHOI BYOUNG LYONG ,  KIM BYOUNG KI ,  KWON SOON JAE

IPC: H01L33/26 ,  H01L33/42 ,  H01L33/44 ,  H01L51/50 ,  H05B33/22

CPC classification number: H05B33/14 ,  B82Y10/00 ,  B82Y20/00 ,  B82Y30/00 ,  C09K11/565 ,  H01L51/0037 ,  H01L51/0039 ,  H01L51/0043 ,  H01L51/0059 ,  H01L51/5012 ,  H01L51/5048 ,  H01L51/52 ,  H05B33/22

Abstract: Disclosed herein a quantum dot light-emitting device which has an inorganic electron transport layer. According to the device, an electron transport layer formed by an inorganic materials, thereby providing a high electron transport velocity or electron density and improving a light emitting efficiency. Further, interlayer resistance between electrode and organic-electron transporting layer or between quantum dot light-emitting layer and organic-electron transporting layer is prohibit, thus increasing a light emitting efficiency of diode.

Abstract translation: 本文公开了一种具有无机电子传输层的量子点发光器件。 根据该装置，由无机材料形成电子传输层，由此提供高电子传输速度或电子密度并提高发光效率。 此外，禁止电极与有机电子传输层之间或量子点发光层与有机电子传输层之间的层间电阻，从而提高二极管的发光效率。

公开(公告)号：WO2005094271A2

公开(公告)日：2005-10-13

申请号：PCT/US2005/010067

申请日：2005-03-25

Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA ,  HOFFBAUER, Mark, A. ,  KLIMOV, Victor, I.

Inventor： MUELLER, Alexander, H.

IPC: H01L29/06 ,  H01L33/08 ,  H01L33/24 ,  H01L33/26 ,  H01L33/32

CPC classification number: H01L33/08 ,  B82Y10/00 ,  B82Y20/00 ,  H01L33/24 ,  H01L33/26 ,  H01L33/32

Abstract: The present invention is directed to light emitting devices including a first layer of a semiconductor material from the group of a p-type semiconductor and a n-type semiconductor, a layer of colloidal nanocrystals on the first layer of a semiconductor material, and, a second layer of a semiconductor material from the group of a p-type semiconductor and a n-type semiconductor on the layer of colloidal nanocrystals.

Abstract translation: 本发明涉及发光器件，其包括来自p型半导体和n型半导体的半导体材料的第一层，半导体材料的第一层上的胶体纳米晶体层，以及 在胶体纳米晶体层上的来自p型半导体和n型半导体的组的半导体材料的第二层。

公开(公告)号：WO00024063A1

公开(公告)日：2000-04-27

申请号：PCT/JP1999/000871

申请日：1999-02-25

IPC: H01L33/26 ,  H01L33/00

CPC classification number: H01L33/26 ,  H01L33/005 ,  H01L33/18

Abstract: A variable-wavelength light-emitting device comprises an active layer of low crystal distortion and stable properties composed of direct gap semiconductor having a magnetic moment. A semiconductor light-emitting device has a structure in which an active layer (spheres of beta -FeSi2) (2") composed of semiconductor silicide or semiconductor silicide doped with a transition metal is formed in a p-n junction having a greater forbidden band than the semiconductor silicide.

Abstract translation: 可变波长发光器件包括由具有磁矩的直接间隙半导体组成的低晶振失真和稳定特性的有源层。 半导体发光器件具有这样一种结构，其中在具有比该栅极的阻带更大的禁带的pn结中形成由半导体硅化物或掺杂有过渡金属的半导体硅化物构成的活性层（β-FeSi 2的球体）（2“） 半导体硅化物。

公开(公告)号：WO00003230A1

公开(公告)日：2000-01-20

申请号：PCT/CA1999/000642

申请日：1999-07-09

IPC: G01N21/64 ,  G01N21/62 ,  G01N33/543 ,  G01N33/551 ,  G01N33/58 ,  H01L33/26 ,  H01L33/34 ,  H01L33/00

CPC classification number: H01L33/346 ,  G01N21/6489 ,  G01N33/54373 ,  G01N33/551 ,  G01N33/582

Abstract: Semiconductor materials having a porous texture are modified with a recognition element and produce a photoluminescent response on exposure to electromagnetic radiation. The recognition elements, which can be selected from biomolecular, organic and inorganic moieties, interact with a target analyte to produce a modulated photoluminescent response, as compared with that of semiconductor materials modified with a recognition element only.

Abstract translation: 具有多孔纹理的半导体材料用识别元件进行修饰，并在暴露于电磁辐射时产生光致发光响应。 与仅用识别元件改性的半导体材料相比，可以从生物分子，有机和无机部分选择的识别元件与靶分析物相互作用以产生调制的光致发光响应。

公开(公告)号：WO9930372A3

公开(公告)日：1999-07-29

申请号：PCT/DE9803641

申请日：1998-12-11

Applicant: FORSCHUNGSZENTRUM JUELICH GMBH ,  MANTL SIEGFRIED ,  LENSSEN DANIEL ,  BAY HELGE

Inventor： MANTL SIEGFRIED ,  LENSSEN DANIEL ,  BAY HELGE

IPC: H01L31/032 ,  H01L31/103 ,  H01L31/105 ,  H01L33/00 ,  H01L33/26 ,  H01S5/32 ,  H01S5/34 ,  H01S3/19

CPC classification number: H01L33/26 ,  B82Y20/00 ,  H01L31/032 ,  H01L31/103 ,  H01L31/105 ,  H01S5/32 ,  H01S5/3223 ,  H01S5/3224 ,  H01S5/3427 ,  H01S2304/00

Abstract: A silicon-based, IC-compatible luminescent diode (LED) or laser diode (LD) has a light-emitting layer based on semiconductor ruthenium silicide (Ru2Si3) on silicon for the near infrared wavelength range around 1.5 mu m. This component has an epitaxial Si/Ru2Si3Si or Si/Ru2Si3 heterostructure with band discontinuities of more than 0.05 eV for electrons or holes in order to achieve charge carrier confinement and thus an efficient light yield at room temperature.

Abstract translation: 本发明涉及一种基于硅的，IC-兼容发光二极管（LED），或在约1.5微米具有在硅上的波长范围内的近红外半导体钌硅化物（Ru2Si3）的基础上的发光层的激光二极管（LD）。 在这种情况下，该装置外延的Si / Ru2Si3 /硅或硅/ Ru2Si3异质结构具有更大的带突变点为0.05电子伏特为电子和空穴以达到在室温下的电荷载流子限制，因此一个有效的光输出。

公开(公告)号：WO2022186437A1

公开(公告)日：2022-09-09

申请号：PCT/KR2021/014731

申请日：2021-10-20

Applicant: 삼성디스플레이 주식회사

Inventor： 이승아 ,  박후근 ,  송영진

IPC: H01L33/08 ,  H01L33/26 ,  H01L27/15 ,  H01L25/075

Abstract: 본 개시의 일 실시예에 의하면, 제1 타입의 반도체를 포함하는 제1 반도체층; 상기 제1 타입과는 상이한 제2 타입의 반도체를 포함하는 제2 반도체층; 및 상기 제1 반도체층과 상기 제2 반도체층 사이에 배치되고, 제1 우물층을 포함하는 제1 활성 영역 및 제2 우물층을 포함하는 제2 활성 영역을 포함하는 활성층; 을 포함하고, 상기 제1 우물층은 제1 밴드갭을 갖고, 상기 제2 우물층은 상기 제1 밴드갭보다 작은 제2 밴드갭을 갖고, 상기 제1 활성 영역의 적어도 일부는 상기 제2 활성 영역과 상기 제2 반도체층 사이에 배치되고, 상기 제2 활성 영역과 상기 제2 반도체층 간 거리는, 상기 제1 반도체층과 상기 제2 반도체층 간 거리의 0.1배 이상의 거리인, 발광 소자가 제공될 수 있다.