公开(公告)号：WO2011084337A3

公开(公告)日：2011-09-09

申请号：PCT/US2010059585

申请日：2010-12-08

Applicant: LAM RES CORP ,  CHEN JACK ,  KIM YUNSANG

Inventor： CHEN JACK ,  KIM YUNSANG

IPC: H01L21/3065

CPC classification number: H01L21/02274 ,  C23C16/0245 ,  C23C16/04 ,  C23C16/509 ,  H01L21/02087 ,  H01L21/02115 ,  H01L21/3083 ,  H01L21/31144

Abstract: A method and apparatus for processing a bevel edge is provided. A substrate is placed in a bevel processing chamber and a passivation layer is formed on the substrate only around a bevel region of the substrate using a passivation plasma confined in a peripheral region of the bevel processing chamber. The substrate may undergo a subsequent semiconductor process, during which the bevel edge region of the substrate is protected by the passivation layer. Alternatively, the passivation layer may be patterned using a patterning plasma formed in an outer peripheral region of the processing chamber, the patterning plasma being confined by increasing plasma confinement. The passivation layer on outer edge portion of the bevel region is removed, while the passivation layer on an inner portion of the bevel region is maintained. The bevel edge of the substrate may be cleaned using the patterned passivation layer as a protective mask.

Abstract translation: 提供了一种用于处理斜面边缘的方法和装置。 将衬底放置在斜角加工室中，并且使用限制在斜角加工室的外围区域中的钝化等离子体仅在衬底的斜面区域周围在衬底上形成钝化层。 衬底可以经历随后的半导体工艺，在此期间衬底的斜面边缘区域被钝化层保护。 可选地，钝化层可以使用在处理室的外围区域中形成的图案化等离子体来图案化，图案化等离子体通过增加等离子体约束而被限制。 在斜角区域的外边缘部分上的钝化层被去除，而在斜角区域的内部上的钝化层被保持。 可以使用图案化的钝化层作为保护掩模来清洁衬底的斜面边缘。

公开(公告)号：WO2009137279A3

公开(公告)日：2010-02-04

申请号：PCT/US2009041730

申请日：2009-04-24

Applicant: LAM RES CORP ,  WONG SCOTT ,  LIN JEFFREY ,  BAILEY ANDREW D III ,  CHEN JACK ,  MOORING BENJAMIN W ,  HUANG CHUNG HO

Inventor： WONG SCOTT ,  LIN JEFFREY ,  BAILEY ANDREW D III ,  CHEN JACK ,  MOORING BENJAMIN W ,  HUANG CHUNG HO

IPC: H01L21/68

CPC classification number: H01L21/68

Abstract: Methods and systems to optimize wafer placement repeatability in semiconductor manufacturing equipment using a controlled series of wafer movements are provided. In one embodiment, a preliminary station calibration is performed to teach a robot position for each station interfaced to facets of a vacuum transfer module used in semiconductor manufacturing. The method also calibrates the system to obtain compensation parameters that take into account the station where the wafer is to be placed, position of sensors in each facet, and offsets derived from performing extend and retract operations of a robot arm. In another embodiment where the robot includes two arms, the method calibrates the system to compensate for differences derived from using one arm or the other. During manufacturing, the wafers are placed in the different stations using the compensation parameters.

Abstract translation: 提供了使用受控系列的晶片移动来优化半导体制造设备中的晶片布置重复性的方法和系统。 在一个实施例中，执行初步站校准以教导与用于半导体制造中的真空传递模块的面连接的每个站的机器人位置。 该方法还校准系统以获得考虑要放置晶片的工位的位置的补偿参数，每个面中的传感器的位置以及执行机器人臂的延伸和缩回操作导出的偏移。 在机器人包括两个臂的另一实施例中，该方法校准系统以补偿从使用一个臂或另一个臂导出的差异。 在制造期间，使用补偿参数将晶片放置在不同的台中。

公开(公告)号：WO2008042581B1

公开(公告)日：2008-12-11

申请号：PCT/US2007078578

申请日：2007-09-14

Applicant: LAM RES CORP ,  CHEN JACK ,  BAILEY ANDREW D III ,  MOORING BEN ,  CAIN STEPHEN J

Inventor： CHEN JACK ,  BAILEY ANDREW D III ,  MOORING BEN ,  CAIN STEPHEN J

IPC: G03B15/00 ,  B08B7/00 ,  B41B17/00 ,  G01B11/00 ,  G01B11/02 ,  G01N21/00 ,  G01R31/26 ,  G03B15/02 ,  G03B15/03

CPC classification number: H01L21/681 ,  H01L21/67259 ,  H01L21/67288

Abstract: A bevel inspection module for capturing images of a substrate is provided. The module includes a rotational motor, which is attached to a substrate chuck and is configured to rotate the substrate chuck thereby allowing the substrate to revolve. The module further includes a camera and an optic enclosure, which is attached to the camera and is configured to rotate, enabling light to be directed toward the substrate. The camera is mounted from a camera mount, which is configured to enable the camera to rotate on a 180 degree plane allowing the camera to capture images of at least one of a top view, a bottom view, and a side view of the substrate. The module yet also includes a backlight arrangement, which is configured to provide illumination to the substrate, thereby enabling the camera to capture the images, which shows contrast between the substrate and a background.

Abstract translation: 提供了一种用于捕获基板的图像的斜面检查模块。 模块包括旋转马达，其连接到基板卡盘并且构造成旋转基板卡盘，从而允许基板旋转。 该模块还包括照相机和光学外壳，其附接到相机并且被配置为旋转，使得光能够被引向基板。 照相机从照相机安装座安装，照相机安装件被配置为使照相机能够在180度平面上旋转，允许照相机拍摄基板的俯视图，底视图和侧视图中的至少一个的图像。 该模块还包括背光布置，其被配置为向基板提供照明，从而使得相机能够捕获显示基板和背景之间的对比度的图像。

公开(公告)号：WO2005009730A1

公开(公告)日：2005-02-03

申请号：PCT/US2004/018439

申请日：2004-06-10

Applicant: PRAXAIR TECHNOLOGY, INC. ,  BP CORPORATION NORTH AMERICA INC. ,  STATOIL ASA ,  SASOL TECHNOLOGY [PTY] LTD. ,  CHEN, Jack, C. ,  BESECKER, Charles, J. ,  CHEN, Hancun ,  ROBINSON, Earl, T.

Inventor： CHEN, Jack, C. ,  BESECKER, Charles, J. ,  CHEN, Hancun ,  ROBINSON, Earl, T.

IPC: B32B3/26

CPC classification number: C04B35/486 ,  B01D53/228 ,  B01D67/0046 ,  B01D67/0072 ,  B01D69/10 ,  B01D69/12 ,  B01D69/141 ,  B01D71/02 ,  B01D71/022 ,  B01D71/024 ,  B01D2257/104 ,  B01D2325/26 ,  C01B3/36 ,  C01B13/0255 ,  C01B2203/061 ,  C01B2203/062 ,  C01B2210/0046 ,  C04B35/01 ,  C04B35/2641 ,  C04B35/453 ,  C04B35/50 ,  C04B2235/3206 ,  C04B2235/3213 ,  C04B2235/3224 ,  C04B2235/3225 ,  C04B2235/3227 ,  C04B2235/3229 ,  C04B2235/3232 ,  C04B2235/3241 ,  C04B2235/3246 ,  C04B2235/3256 ,  C04B2235/3258 ,  C04B2235/3274 ,  C04B2235/3279 ,  C04B2235/3286 ,  C04B2235/3298 ,  C04B2235/404 ,  C04B2235/408 ,  C04B2235/5436 ,  C04B2235/80 ,  Y10T428/249954 ,  Y10T428/249956

Abstract: A composite oxygen ion transport element (1) that has a layered structure formed by a dense layer (10) to transport oxygen ions and electrons and a porous support layer (12) to provide mechanical support. The dense layer (10) can be formed of a mixture of a mixed conductor, an ionic conductor, and a metal. The porous support layer (12) can be fabricated from an oxide dispersion strengthened metal, a metal-reinforced intermetallic alloy, a boron-doped M05Si3-based intermetallic alloy or combinations thereof. The support layer (12) can be provided with a network of non-interconnected pores (14) and each of said pores (14) communicates between opposite surfaces of said support layer (12). Such a support layer (12) can be advantageously employed to reduce diffusion resistance in any type of element, including those using a different material makeup than that outlined above.

Abstract translation: 一种复合氧离子传输元件（1），其具有由致密层（10）形成以输送氧离子和电子的层状结构和多孔支撑层（12）以提供机械支撑。 致密层（10）可以由混合导体，离子导体和金属的混合物形成。 多孔支撑层（12）可以由氧化物分散强化金属，金属增强金属间合金，掺硼的M05Si3基金属间合金或其组合制成。 支撑层（12）可以设置有非互连孔（14）的网络，并且每个所述孔（14）在所述支撑层（12）的相对表面之间连通。 可以有利地使用这种支撑层（12）以减少任何类型的元件中的扩散阻力，包括使用与上述不同的材料组成的元件。

公开(公告)号：WO0221239A9

公开(公告)日：2003-04-10

申请号：PCT/US0142070

申请日：2001-09-06

Applicant: XANBOO INC ,  REZVANI BABAK ,  CHEN JACK

Inventor： REZVANI BABAK ,  CHEN JACK

IPC: H04L12/56 ,  G06F15/177

CPC classification number: H04L47/10 ,  H04L47/263 ,  H04L47/32 ,  H04L47/724

Abstract: The invention relates to an adaptively controlled resource (180) and method of adaptively controlling resource behavior (180). An adaptively controlled resource (180) is provided having at least one parameter (182) and at least one attribute (208). A controller (200) is in communication with the resource (180) for receiving parameters (182) and an attribute (208). The controller (200) generates at least one output attribute (212) corresponding to the first resource parameter (182). The controller (200) communicates the output attribute (212) to the resource (180) and one of the at least one parameter (182) of the resource (180) is updated such that the behavior of the first resource (180) is modified in regard to the updated parameter.

Abstract translation: 本发明涉及自适应控制的资源（180）和自适应地控制资源行为的方法（180）。 提供具有至少一个参数（182）和至少一个属性（208）的自适应控制资源（180）。 控制器（200）与用于接收参数（182）和属性（208）的资源（180）通信。 控制器（200）生成对应于第一资源参数（182）的至少一个输出属性（212）。 控制器（200）将输出属性（212）传送到资源（180），并且更新资源（180）的至少一个参数（182）中的一个，使得第一资源（180）的行为被修改 关于更新的参数。

公开(公告)号：WO2017184617A1

公开(公告)日：2017-10-26

申请号：PCT/US2017/028160

申请日：2017-04-18

Applicant: CHEN, Jack

Inventor： CHEN, Jack

IPC: B63H16/18 ,  B60F3/00 ,  B63B35/73 ,  B62M1/24

Abstract: A human powered watercraft or land vehicle is described herein. A watercraft or land vehicle may have two pedals that reciprocated are in a linear or slightly curved trajectory but not a circular motion. As the two pedals are reciprocated, an output shaft is rotated in either a clockwise or counterclockwise direction when the left pedal is pushed forward or when the right pedal is pushed forward. The output shaft may be connected to a propeller of a watercraft or a land vehicle so as to propel the watercraft or land vehicle forward. The output shaft may receive rotational input through two gears mounted to the output shaft with one-way bearings that enable the output shaft to rotate in the same direction regardless of whether the left pedal or the right pedal is being pushed forward.

Abstract translation: 这里描述了一种人力驱动的水运工具或陆地运载工具。 船只或陆地车辆可以具有两个往复运动的踏板，其具有线性或稍微弯曲的轨迹但不是圆形运动。 当两个踏板往复运动时，当向左推动踏板或向右推动右踏板时，输出轴沿顺时针或逆时针方向旋转。 输出轴可以连接到船只或陆地车辆的螺旋桨上，以便推进船只或陆地车辆向前。 输出轴可以通过安装在输出轴上的两个齿轮接收旋转输入，单向轴承使输出轴能够以相同的方向旋转，而不管左侧踏板或右侧踏板是否被向前推动。

公开(公告)号：WO2011084337A2

公开(公告)日：2011-07-14

申请号：PCT/US2010/059585

申请日：2010-12-08

Applicant: LAM RESEARCH CORPORATION ,  CHEN, Jack ,  KIM, Yunsang

Inventor： CHEN, Jack ,  KIM, Yunsang

IPC: H01L21/3065

CPC classification number: H01L21/02274 ,  C23C16/0245 ,  C23C16/04 ,  C23C16/509 ,  H01L21/02087 ,  H01L21/02115 ,  H01L21/3083 ,  H01L21/31144

Abstract: A method and apparatus for processing a bevel edge is provided. A substrate is placed in a bevel processing chamber and a passivation layer is formed on the substrate only around a bevel region of the substrate using a passivation plasma confined in a peripheral region of the bevel processing chamber. The substrate may undergo a subsequent semiconductor process, during which the bevel edge region of the substrate is protected by the passivation layer. Alternatively, the passivation layer may be patterned using a patterning plasma formed in an outer peripheral region of the processing chamber, the patterning plasma being confined by increasing plasma confinement. The passivation layer on outer edge portion of the bevel region is removed, while the passivation layer on an inner portion of the bevel region is maintained. The bevel edge of the substrate may be cleaned using the patterned passivation layer as a protective mask.

Abstract translation: 提供了一种用于处理斜边的方法和装置。 将衬底放置在斜面处理室中，并且使用限制在斜面处理室的周边区域中的钝化等离子体在衬底的仅一个斜面区域周围形成钝化层。 衬底可以经历随后的半导体工艺，在此期间衬底的斜边缘区域被钝化层保护。 或者，可以使用在处理室的外围区域中形成的图案化等离子体对钝化层进行图案化，通过增加等离子体限制来限制图形化等离子体。 去除斜面区域的外边缘部分上的钝化层，同时保持斜面区域的内部部分上的钝化层。 可以使用图案化的钝化层作为保护掩模来清洁基底的斜边缘。

公开(公告)号：WO2009137279A2

公开(公告)日：2009-11-12

申请号：PCT/US2009/041730

申请日：2009-04-24

Applicant: LAM RESEARCH CORPORATION ,  WONG, Scott ,  LIN, Jeffrey ,  BAILEY, Andrew, D. ,  CHEN, Jack ,  MOORING, Benjamin, W. ,  HUANG, Chung, Ho

Inventor： WONG, Scott ,  LIN, Jeffrey ,  BAILEY, Andrew, D. ,  CHEN, Jack ,  MOORING, Benjamin, W. ,  HUANG, Chung, Ho

IPC: H01L21/68

CPC classification number: H01L21/68

Abstract: Methods and systems to optimize wafer placement repeatability in semiconductor manufacturing equipment using a controlled series of wafer movements are provided. In one embodiment, a preliminary station calibration is performed to teach a robot position for each station interfaced to facets of a vacuum transfer module used in semiconductor manufacturing. The method also calibrates the system to obtain compensation parameters that take into account the station where the wafer is to be placed, position of sensors in each facet, and offsets derived from performing extend and retract operations of a robot arm. In another embodiment where the robot includes two arms, the method calibrates the system to compensate for differences derived from using one arm or the other. During manufacturing, the wafers are placed in the different stations using the compensation parameters.

Abstract translation: 提供了使用受控系列的晶片移动来优化半导体制造设备中的晶片布置重复性的方法和系统。 在一个实施例中，执行初步站校准以教导与用于半导体制造中的真空传递模块的面连接的每个站的机器人位置。 该方法还校准系统以获得考虑要放置晶片的工位的位置的补偿参数，每个面中的传感器的位置以及执行机器人臂的延伸和缩回操作导出的偏移。 在机器人包括两个臂的另一实施例中，该方法校准系统以补偿从使用一个臂或另一个臂导出的差异。 在制造期间，使用补偿参数将晶片放置在不同的台中。

公开(公告)号：WO2008082923A2

公开(公告)日：2008-07-10

申请号：PCT/US2007/087673

申请日：2007-12-14

Applicant: LAM RESEARCH CORPORATION ,  KIM, Yunsang ,  CHEN, Jack ,  FANG, Tong ,  BAILEY III, Andrew

Inventor： KIM, Yunsang ,  CHEN, Jack ,  FANG, Tong ,  BAILEY III, Andrew

IPC: H01L21/306 ,  C23F1/02

CPC classification number: H01J37/32706 ,  H01J37/32532 ,  H01J37/32623 ,  H01L21/02087 ,  H01L21/0209 ,  H01L21/67069

Abstract: Methods and apparatus for remedying arc-related damage to the substrate during plasma bevel etching. A plasma shield is disposed above the substrate to prevent plasma, which is generated in between two annular grounded plates, from reaching the exposed metallization on the substrate. Additionally or alternatively, a carbon-free fluorinated process source gas may be employed and/or the RF bias power may be ramped up gradually during plasma generation to alleviate arc-related damage during bevel etching. Also additionally or alternatively, helium and/or hydrogen may be added to the process source gas to alleviate arc-related damage during bevel etching.

Abstract translation: 用于在等离子体斜面蚀刻期间修复对基板的电弧相关损坏的方法和设备。 等离子体屏蔽设置在衬底上方以防止在两个环形接地板之间产生的等离子体到达衬底上的暴露金属化。 另外地或可选地，可以使用无碳氟化工艺源气体和/或在等离子体生成期间RF偏压功率可以逐渐增加以减少斜切蚀刻期间的电弧相关损坏。 另外或作为另外一种选择，可将氦气和/或氢气添加到工艺源气体中以减少斜面蚀刻期间的电弧相关损坏。

公开(公告)号：WO2008042580A2

公开(公告)日：2008-04-10

申请号：PCT/US2007078576

申请日：2007-09-14

Applicant: LAM RES CORP ,  CHEN JACK ,  BAILEY ANDREW D III ,  MOORING BEN ,  CAIN STEPHEN J

Inventor： CHEN JACK ,  BAILEY ANDREW D III ,  MOORING BEN ,  CAIN STEPHEN J

IPC: H01L21/66 ,  G06F19/00

CPC classification number: G05B19/41875 ,  G05B2219/37398 ,  G05B2219/45031 ,  G05B2219/50057 ,  Y02P90/22

Abstract: A method for calculating a process center for a chuck in a processing chamber is provided. The method includes generating pre-processing and post-processing measurement data points, which is perform by measuring thickness of a film substrate at a set of orientations and a set of distances from a geometric center of the substrate. The method also includes comparing the pre-processing and post-processing measurement data points to calculate a set of etch depth numbers. The method further includes generating etch profiles for the set of orientations. The method yet also includes extrapolating a set of radiuses, which is associated with a first etch depth, from the etch profiles. The method yet further includes generating an off-centered plot, which is a graphical representation of the set of radiuses versus the set of orientations. The method more over includes calculating the process center by applying a curve-fitting equation to the off-centered plot.

Abstract translation: 提供了一种用于计算处理室中的卡盘的处理中心的方法。 该方法包括产生预处理和后处理测量数据点，其通过以一组取向和距离基板的几何中心的一组距离测量薄膜基板的厚度来执行。 该方法还包括比较预处理和后处理测量数据点以计算一组蚀刻深度数。 该方法还包括产生该组取向的蚀刻轮廓。 该方法还包括从蚀刻轮廓推断与第一蚀刻深度相关联的一组半径。 该方法还包括生成偏心图，其是该组半径与该组取向的图形表示。 更多的方法包括通过对偏心图应用曲线拟合方程来计算过程中心。