PREPACKAGED STAIR-STACKED MEMORY MODULE IN A CHIP SCALE SYSTEM IN PACKAGE, AND METHODS OF MAKING SAME
    2.
    发明申请
    PREPACKAGED STAIR-STACKED MEMORY MODULE IN A CHIP SCALE SYSTEM IN PACKAGE, AND METHODS OF MAKING SAME 审中-公开
    封装中芯片尺寸系统中预包装的阶梯式堆积存储器模块及其制造方法

    公开(公告)号:WO2018058416A1

    公开(公告)日:2018-04-05

    申请号:PCT/CN2016/100760

    申请日:2016-09-29

    IPC分类号: H01L23/522

    摘要: A pre-packaged stair-stacked memory module is mounted on a board with at least one additional component. A stair-stacked memory module includes a plurality of memory dice that are stacked vertically with respect to a processor die. A spacer is used adjacent to the processor die to create a bridge for the stair-stacked memory module. Each memory die in the stair-stacked memory module includes a vertical bond wire that emerges from a matrix for connection. The matrix encloses the stair-stacked memory module and at least a portion of the processor die. The matrix might also enclose the at least one additional component.

    摘要翻译:

    预先封装的阶梯式堆叠内存模块安装在至少有一个附加组件的电路板上。 楼梯堆叠的存储器模块包括相对于处理器裸片垂直堆叠的多个存储器裸片。 邻近处理器芯片使用垫片为阶梯堆叠的内存模块创建桥接。 楼梯式堆叠存储器模块中的每个存储器裸片包括从矩阵中露出的用于连接的垂直接合线。 矩阵包围阶梯堆叠的存储器模块和处理器裸片的至少一部分。 矩阵也可能包含至少一个附加组件。

    STAIR-STACKED DICE DEVICE IN SYSTEM IN PACKAGE, AND METHODS OF MAKING SAME
    4.
    发明申请
    STAIR-STACKED DICE DEVICE IN SYSTEM IN PACKAGE, AND METHODS OF MAKING SAME 审中-公开
    包装系统中的阶梯堆叠式骰子装置及其制造方法

    公开(公告)号:WO2018058548A1

    公开(公告)日:2018-04-05

    申请号:PCT/CN2016/101130

    申请日:2016-09-30

    IPC分类号: H01L25/00

    摘要: A system in package includes a stair-stacked memory module that is stacked vertically with respect to a processor die. A spacer is used adjacent to the processor die to create a bridge for the stair-stacked memory module. Each memory die in the stair-stacked memory module includes a vertical bond wire that emerges from a matrix for connection. The matrix encloses the stair-stacked memory module and at least a portion of the processor die.

    摘要翻译: 封装中的系统包括相对于处理器裸片垂直堆叠的阶梯式堆叠式存储器模块。 邻近处理器芯片使用垫片为阶梯堆叠的内存模块创建桥接。 楼梯式堆叠存储器模块中的每个存储器裸片包括从矩阵中露出的用于连接的垂直接合线。 矩阵包围阶梯式堆叠的存储器模块和至少一部分处理器裸片。

    INTEGRATED CIRCUIT DIE STACKS
    5.
    发明申请

    公开(公告)号:WO2018112687A1

    公开(公告)日:2018-06-28

    申请号:PCT/CN2016/110701

    申请日:2016-12-19

    IPC分类号: H01L25/00

    摘要: Disclosed herein are integrated circuit (IC) die stacks, as well as related apparatuses and methods. For example, in some embodiments, an IC package may include: a package substrate having a substrate conductive contact; a first die coupled to the package substrate, wherein the first die has a first face and an opposing second face, the second face of the first die is between the first face of the first die and the package substrate, and the first die has a first conductive contact at the first face of the first die; a second die coupled to the first die, wherein the second die has a second conductive contact facing the first face of the first die; and a bondwire between the first conductive contact and the substrate conductive contact, wherein the bondwire is also in electrical contact with the second conductive contact.

    JOINT CONNECTION OF CORNER NON-CRITICAL TO FUNCTION (NCTF) BALL FOR BGA SOLDER JOINT RELIABILITY (SJR) ENHANCEMENT

    公开(公告)号:WO2020168552A1

    公开(公告)日:2020-08-27

    申请号:PCT/CN2019/075875

    申请日:2019-02-22

    IPC分类号: H01L23/488

    摘要: Embodiments include semiconductor packages and a method of forming the semiconductor packages. A semiconductor package includes a package substrate with a top surface, a corner portion, and a plurality of solder balls on the top surface of the package substrate. The semiconductor package also includes a pattern on the corner portion of the package substrate. The pattern may have a width substantially equal to a width of the solder balls. The pattern may also include a continuous line having solder materials. The semiconductor package may include a plurality of conductive pads on the package substrate. The conductive pads may be coupled to the pattern. The pattern may have a z-height that is substantially equal to a z-height of the solder balls, and have one or more outer edges, where the outer edges of the pattern are sidewalls. The sidewalls of the pattern may be substantially vertical or tapered sidewalls.

    INTERCONNECT STRUCTURE FABRICATED USING LITHOGRAPHIC AND DEPOSITION PROCESSES

    公开(公告)号:WO2020118558A1

    公开(公告)日:2020-06-18

    申请号:PCT/CN2018/120572

    申请日:2018-12-12

    IPC分类号: H01L23/525

    摘要: Embodiments described herein provide techniques of forming an interconnect structure using lithographic and deposition processes. The interconnect structure can be used to couple components of a semiconductor package. For one example, a semiconductor package includes a die stack and an interconnect structure formed on the die stack. The die stack comprises a plurality of dies. Each die in the die stack comprises: a first surface; a second surface opposite the first surface; sidewall surfaces coupling the first surface to the second surface; and a pad on the first surface. A one sidewall surface of one of the dies has a sloped profile. The semiconductor package also includes an interconnect structure positioned on the first surfaces and the sidewall with the sloped profile. In this semiconductor package, the interconnect structure electrically couples the pad on each of the dies to each other.