公开(公告)号：WO2013101423A1

公开(公告)日：2013-07-04

申请号：PCT/US2012/068087

申请日：2012-12-06

Applicant: APPLIED MATERIALS, INC. ,  HAN, Xinhai ,  RAJAGOPALAN, Nagarajan ,  XUAN, Guangchi ,  ZHOU, Jianhua ,  LI, Jigang ,  SHAIKH, Shahid ,  REILLY, Patrick ,  NOWAK, Thomas ,  ROCHA-ALVAREZ, Juan Carlos ,  PARK, Heung Lak ,  KIM, Bok Hoen

Inventor： HAN, Xinhai ,  RAJAGOPALAN, Nagarajan ,  XUAN, Guangchi ,  ZHOU, Jianhua ,  LI, Jigang ,  SHAIKH, Shahid ,  REILLY, Patrick ,  NOWAK, Thomas ,  ROCHA-ALVAREZ, Juan Carlos ,  PARK, Heung Lak ,  KIM, Bok Hoen

IPC: H01L21/8247 ,  H01L27/115

CPC classification number: H01L29/66833 ,  C23C16/24 ,  C23C16/345 ,  C23C16/401 ,  C23C16/505 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/022 ,  H01L21/02274 ,  H01L27/11582 ,  H01L29/7926

Abstract: Methods are provided for depositing a stack of film layers for use in vertical gates for 3D memory devices, by depositing a sacrificial nitride film layer at a sacrificial film deposition temperature greater than about 550 °C; depositing an oxide film layer over the nitride film layer, at an oxide deposition temperature of about 600 °C. or greater; repeating the above steps to deposit a film stack having alternating layers of the sacrificial films and the oxide films; forming a plurality of holes in the film stack; and depositing polysilicon in the plurality of holes in the film stack at a polysilicon process temperature of about 700 °C. or greater, wherein the sacrificial film layers and the oxide film layers experience near zero shrinkage during the polysilicon deposition. Flash drive memory devices may also be made by these methods.

Abstract translation: 提供了用于通过在大于约550℃的牺牲膜沉积温度下沉积牺牲氮化物膜层来沉积用于3D存储器件的垂直栅极中的薄膜层堆叠的方法; 在氧化物沉积温度约600℃下在氮化物膜层上沉积氧化膜层。 或更大; 重复上述步骤以沉积具有交替层的牺牲膜和氧化物膜的膜堆叠; 在薄膜叠层中形成多个孔; 以及在约700℃的多晶硅工艺温度下在所述膜堆叠中的多个孔中沉积多晶硅。 或更大，其中牺牲膜层和氧化物膜层在多晶硅沉积期间经历接近零收缩。 也可以通过这些方法制造闪存驱动器存储器件。

公开(公告)号：WO2013070570A1

公开(公告)日：2013-05-16

申请号：PCT/US2012/063651

申请日：2012-11-06

Applicant: APPLIED MATERIALS, INC. ,  LEE, Kwangduk, Douglas ,  RATHI, Sudha ,  CHAN, Chiu ,  SEAMONS, Martin, J. ,  KIM, Bok, Hoen

Inventor： LEE, Kwangduk, Douglas ,  RATHI, Sudha ,  CHAN, Chiu ,  SEAMONS, Martin, J. ,  KIM, Bok, Hoen

IPC: H01L21/302

CPC classification number: H01L21/6704 ,  C23C16/0245 ,  H01L21/02063 ,  H01L21/31122 ,  H01L21/31144 ,  H01L21/76814

Abstract: Embodiments of the invention generally relate to methods of removing and/or cleaning a substrate surface having different material layers disposed thereon using water vapor plasma treatment. In one embodiment, a method for cleaning a surface of a substrate includes positioning a substrate into a processing chamber, the substrate having a dielectric layer disposed thereon forming openings on the substrate, exposing the dielectric layer disposed on the substrate to water vapor supplied into the chamber to form a plasma in the water vapor, maintaining a process pressure in the chamber at between about 1 Torr and about 120 Torr, and cleaning the contact structure formed on the substrate.

Abstract translation: 本发明的实施方案一般涉及使用水蒸气等离子体处理去除和/或清洁其上设置有不同材料层的衬底表面的方法。 在一个实施例中，一种用于清洁衬底的表面的方法包括将衬底定位到处理室中，所述衬底具有设置在其上的电介质层，形成在衬底上的开口，将设置在衬底上的介电层暴露于供应到衬底 在水蒸气中形成等离子体，将腔室中的处理压力保持在约1托至约120托之间，并清洁形成在基底上的接触结构。

公开(公告)号：WO2011137059A3

公开(公告)日：2012-02-16

申请号：PCT/US2011033750

申请日：2011-04-25

Applicant: APPLIED MATERIALS INC ,  YU HANG ,  PADHI DEENESH ,  CAI MAN-PING ,  YOSHIDA NAOMI ,  MIAO LI YAN ,  CHENG SIU F ,  SHAIKH SHAHID ,  PARK SOHYUN ,  PARK HEUNG LAK ,  KIM BOK HOEN

Inventor： YU HANG ,  PADHI DEENESH ,  CAI MAN-PING ,  YOSHIDA NAOMI ,  MIAO LI YAN ,  CHENG SIU F ,  SHAIKH SHAHID ,  PARK SOHYUN ,  PARK HEUNG LAK ,  KIM BOK HOEN

IPC: H01L21/205 ,  H01L21/027

CPC classification number: H01L21/02115 ,  C23C16/26 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/0332 ,  H01L21/0337 ,  H01L21/0338

Abstract: Embodiments described herein relate to materials and processes for patterning and etching features in a semiconductor substrate. In one embodiment, a method of forming a composite amorphous carbon layer for improved stack defectivity on a substrate is provided. The method comprises positioning a substrate in a process chamber, introducing a hydrocarbon source gas into the process chamber, introducing a diluent source gas into the process chamber, introducing a plasma-initiating gas into the process chamber, generating a plasma in the process chamber, forming an amorphous carbon initiation layer on the substrate, wherein the hydrocarbon source gas has a volumetric flow rate to diluent source gas flow rate ratio of 1:12 or less; and forming a bulk amorphous carbon layer on the amorphous carbon initiation layer, wherein a hydrocarbon source gas used to form the bulk amorphous carbon layer has a volumetric flow rate to a diluent source gas flow rate of 1:6 or greater to form the composite amorphous carbon layer.

Abstract translation: 本文描述的实施例涉及用于图案化和蚀刻半导体衬底中的特征的材料和工艺。 在一个实施例中，提供了形成用于提高衬底缺陷率的复合非晶碳层的方法。 该方法包括将基板定位在处理室中，将烃源气体引入处理室中，将稀释源气体引入处理室，将等离子体起始气体引入处理室，在处理室中产生等离子体， 在所述基板上形成无定形碳起始层，其中所述烃源气体的体积流量与稀释剂源气体流量比为1:12以下; 以及在所述无定形碳起始层上形成块状无定形碳层，其中用于形成所述块状无定形碳层的烃源气体具有以1:6或更大的稀释剂源气体流量的体积流量，以形成所述复合非晶体 碳层。

公开(公告)号：WO2011137059A2

公开(公告)日：2011-11-03

申请号：PCT/US2011/033750

申请日：2011-04-25

Applicant: APPLIED MATERIALS, INC. ,  YU, Hang ,  PADHI, Deenesh ,  CAI, Man-Ping ,  YOSHIDA, Naomi ,  MIAO, Li Yan ,  CHENG, Siu F. ,  SHAIKH, Shahid ,  PARK, Sohyun ,  PARK, Heung Lak ,  KIM, Bok Hoen

Inventor： YU, Hang ,  PADHI, Deenesh ,  CAI, Man-Ping ,  YOSHIDA, Naomi ,  MIAO, Li Yan ,  CHENG, Siu F. ,  SHAIKH, Shahid ,  PARK, Sohyun ,  PARK, Heung Lak ,  KIM, Bok Hoen

IPC: H01L21/205 ,  H01L21/027

CPC classification number: H01L21/02115 ,  C23C16/26 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/0332 ,  H01L21/0337 ,  H01L21/0338

Abstract: Embodiments described herein relate to materials and processes for patterning and etching features in a semiconductor substrate. In one embodiment, a method of forming a composite amorphous carbon layer for improved stack defectivity on a substrate is provided. The method comprises positioning a substrate in a process chamber, introducing a hydrocarbon source gas into the process chamber, introducing a diluent source gas into the process chamber, introducing a plasma-initiating gas into the process chamber, generating a plasma in the process chamber, forming an amorphous carbon initiation layer on the substrate, wherein the hydrocarbon source gas has a volumetric flow rate to diluent source gas flow rate ratio of 1:12 or less; and forming a bulk amorphous carbon layer on the amorphous carbon initiation layer, wherein a hydrocarbon source gas used to form the bulk amorphous carbon layer has a volumetric flow rate to a diluent source gas flow rate of 1:6 or greater to form the composite amorphous carbon layer.

Abstract translation: 本文描述的实施例涉及用于图案化和蚀刻半导体衬底中的特征的材料和工艺。 在一个实施例中，提供了形成用于提高衬底缺陷率的复合非晶碳层的方法。 该方法包括将基板定位在处理室中，将烃源气体引入处理室中，将稀释源气体引入处理室，将等离子体起始气体引入处理室，在处理室中产生等离子体， 在所述基板上形成无定形碳起始层，其中所述烃源气体的体积流量与稀释剂源气体流量比为1:12以下; 以及在所述无定形碳起始层上形成块状无定形碳层，其中用于形成所述块状无定形碳层的烃源气体具有以1:6或更大的稀释剂源气体流量的体积流量，以形成所述复合非晶体 碳层。

公开(公告)号：WO2009099713A3

公开(公告)日：2009-10-08

申请号：PCT/US2009030709

申请日：2009-01-12

Applicant: APPLIED MATERIALS INC ,  RATHI SUDHA ,  KIM EUI KYOON ,  KIM BOK HOEN ,  SEAMONS MARTIN JAY ,  SCHMITT FRANCIMAR C

Inventor： RATHI SUDHA ,  KIM EUI KYOON ,  KIM BOK HOEN ,  SEAMONS MARTIN JAY ,  SCHMITT FRANCIMAR C

IPC: H01L21/027 ,  G03F7/00

CPC classification number: G03F7/091 ,  G03F7/11 ,  Y10T428/30

Abstract: A method and structure for the fabrication of semiconductor devices having feature sizes in the range of 90 nm and smaller is provided. In one embodiment of the invention, a method is provided for processing a substrate including depositing an anti-reflective coating layer on a surface of the substrate, depositing an adhesion promotion layer on the anti-reflective coating layer, and depositing a resist material on the adhesion promotion layer. In another embodiment of the invention, a semiconductor substrate structure is provided including a dielectric substrate, an amorphous carbon layer deposited on the dielectric layer, an anti-reflective coating layer deposited on the amorphous carbon layer, an adhesion promotion layer deposited on the anti-reflective coating layer, and a resist material deposited on the adhesion promotion layer.

Abstract translation: 提供了用于制造具有在90nm和更小范围内的特征尺寸的半导体器件的方法和结构。 在本发明的一个实施例中，提供了一种用于处理衬底的方法，该方法包括在衬底的表面上沉积抗反射涂层，在抗反射涂层上沉积粘合促进层，以及在所述抗反射涂层上沉积抗蚀剂材料 粘附促进层。 在本发明的另一个实施例中，提供了一种半导体衬底结构，包括电介质衬底，沉积在电介质层上的非晶碳层，沉积在非晶碳层上的抗反射涂层， 反射涂层和沉积在粘合促进层上的抗蚀剂材料。

公开(公告)号：WO2008043047B1

公开(公告)日：2008-10-02

申请号：PCT/US2007080491

申请日：2007-10-04

Applicant: APPLIED MATERIALS INC ,  BALASUBRAMANIAN GANESH ,  BANSAL AMIT ,  JUCO ELLER Y ,  AYOUB MOHAMAD ,  KIM HYUNG-JOON ,  JANAKIRAMAN KARTHIK ,  RATHI SUDHA ,  PADHI DEENESH ,  SEAMONS MARTIN JAY ,  SIVARAMAKRISHNAN VISWESWAREN ,  KIM BOK HOEN ,  AL-BAYATI AMIR ,  WITTY DEREK R ,  M SAAD HICHEM ,  BARYSHNIKOV ANTON ,  CHAN CHIU ,  LIU SHUANG

Inventor： BALASUBRAMANIAN GANESH ,  BANSAL AMIT ,  JUCO ELLER Y ,  AYOUB MOHAMAD ,  KIM HYUNG-JOON ,  JANAKIRAMAN KARTHIK ,  RATHI SUDHA ,  PADHI DEENESH ,  SEAMONS MARTIN JAY ,  SIVARAMAKRISHNAN VISWESWAREN ,  KIM BOK HOEN ,  AL-BAYATI AMIR ,  WITTY DEREK R ,  M SAAD HICHEM ,  BARYSHNIKOV ANTON ,  CHAN CHIU ,  LIU SHUANG

IPC: G06F11/30 ,  G06F19/00 ,  G21C17/00

CPC classification number: H01L21/6831 ,  C23C16/52 ,  H01J37/32431 ,  H01L21/67069 ,  H01L21/67253

Abstract: The present invention generally provides methods and apparatus for monitoring and maintaining flatness of a substrate in a plasma reactor. Certain embodiments of the present invention provide a method for processing a substrate comprising positioning the substrate on an electrostatic chuck, applying an RF power between the an electrode in the electrostatic chuck and a counter electrode positioned parallel to the electrostatic chuck, applying a DC bias to the electrode in the electrostatic chuck to clamp the substrate on the electrostatic chuck, and measuring an imaginary impedance of the electrostatic chuck.

Abstract translation: 本发明总体上提供了用于监测和维持等离子体反应器中的基板的平整度的方法和装置。 本发明的某些实施例提供了一种用于处理衬底的方法，包括将衬底定位在静电吸盘上，在静电吸盘中的电极和平行于静电吸盘的位置之间施加RF功率，将DC偏压施加到 静电卡盘中的电极将基板夹在静电卡盘上，并测量静电卡盘的假想阻抗。

公开(公告)号：WO2008094792A1

公开(公告)日：2008-08-07

申请号：PCT/US2008/051731

申请日：2008-01-22

Applicant: APPLIED MATERIALS, INC. ,  DEMOS, Alexandros T. ,  XIA, Li-Qun ,  KIM, Bok Hoen ,  WITTY, Derek R. ,  M'SAAD, Hichem

Inventor： DEMOS, Alexandros T. ,  XIA, Li-Qun ,  KIM, Bok Hoen ,  WITTY, Derek R. ,  M'SAAD, Hichem

IPC: H01L23/482 ,  H01L21/469

CPC classification number: H01L21/7682 ,  C23C16/401 ,  C23C16/56 ,  H01L21/02115 ,  H01L21/02126 ,  H01L21/022 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/02351 ,  H01L21/02362 ,  H01L21/3146 ,  H01L21/31633 ,  H01L21/31695 ,  H01L21/76811 ,  H01L21/76835 ,  H01L2221/1047 ,  Y10S438/931

Abstract: Methods are provided for forming a structure that includes an air gap In one embodiment, a method is provided for forming a damascene structure compnses depositing a porous low dielectric constant layer by a method including reacting an organosilicon compound and a porogen-providing precursor, depositing a porogen-containing material, and removing at least a portion of the porogen -containing matenal, depositing an organic layer on the porous low dielectric constant layer by reacting the porogen-providing precursor, forming a feature defintion in the organic and dielectric constant layer, filling the feature definition with a conductive material, depositing a mask layer on the organic layer, forming apertures in the mask layer to expose the organic layer, removing a portion or all of the organic layer through the apertures, and forming an air gap adjacent the conductive matenal.

Abstract translation: 提供用于形成包括气隙的结构的方法。在一个实施例中，提供了一种用于形成镶嵌结构的方法，其包括通过包括使有机硅化合物和致孔剂提供前体反应的方法沉积多孔低介电常数层， 致孔剂材料，并且除去至少一部分含致孔剂的马氏体，通过使造孔剂提供前体反应，在有机和介电常数层中形成特征定义，将有机层沉积在多孔低介电常数层上，填充 具有导电材料的特征定义，在有机层上沉积掩模层，在掩模层中形成孔以暴露有机层，通过孔去除部分或全部有机层，以及形成邻近导电的气隙 matenal。

公开(公告)号：WO2008002844A3

公开(公告)日：2008-08-07

申请号：PCT/US2007071923

申请日：2007-06-22

Applicant: APPLIED MATERIALS INC ,  PADHI DEENESH ,  HA HYOUNG-CHAN ,  RATHI SUDHA ,  WITTY DEREK R ,  CHAN CHIU ,  PARK SOHYUN ,  BALASUBRAMANIAN GANESH ,  JANAKIRAMAN KARTHIK ,  SEAMONS MARTIN JAY ,  SIVARAMAKRISHNAN VISWESWAREN ,  KIM BOK HOEN ,  M SAAD HICHEM

Inventor： PADHI DEENESH ,  HA HYOUNG-CHAN ,  RATHI SUDHA ,  WITTY DEREK R ,  CHAN CHIU ,  PARK SOHYUN ,  BALASUBRAMANIAN GANESH ,  JANAKIRAMAN KARTHIK ,  SEAMONS MARTIN JAY ,  SIVARAMAKRISHNAN VISWESWAREN ,  KIM BOK HOEN ,  M SAAD HICHEM

IPC: H05H1/24

CPC classification number: H01L21/3146 ,  C23C16/045 ,  C23C16/26 ,  C23C16/5096 ,  C23C16/56 ,  H01L21/31144

Abstract: A method for depositing an amorphous carbon layer on a substrate includes the steps of positioning a substrate in a chamber, introducing a hydrocarbon source into the processing chamber, introducing a heavy noble gas into the processing chamber, and generating a plasma in the processing chamber. The heavy noble gas is selected from the group consisting of argon, krypton, xenon, and combinations thereof and the molar flow rate of the noble gas is greater than the molar flow rate of the hydrocarbon source. A post-deposition termination step may be included, wherein the flow of the hydrocarbon source and the noble gas is stopped and a plasma is maintained in the chamber for a period of time to remove particles therefrom.

Abstract translation: 在基板上沉积无定形碳层的方法包括以下步骤：将基板定位在室中，将烃源引入处理室，将重稀有气体引入处理室，以及在处理室中产生等离子体。 重稀土气体选自氩，氪，氙及其组合，惰性气体的摩尔流量大于烃源的摩尔流量。 可以包括沉积终止步骤，其中停止烃源和惰性气体的流动，并且将等离子体保持在室中一段时间​​以从中除去颗粒。

公开(公告)号：WO2008043047A3

公开(公告)日：2008-07-31

申请号：PCT/US2007080491

申请日：2007-10-04

Applicant: APPLIED MATERIALS INC ,  BALASUBRAMANIAN GANESH ,  BANSAL AMIT ,  JUCO ELLER Y ,  AYOUB MOHAMAD ,  KIM HYUNG-JOON ,  JANAKIRAMAN KARTHIK ,  RATHI SUDHA ,  PADHI DEENESH ,  SEAMONS MARTIN JAY ,  SIVARAMAKRISHNAN VISWESWAREN ,  KIM BOK HOEN ,  AL-BAYATI AMIR ,  WITTY DEREK R ,  M SAAD HICHEM ,  BARYSHNIKOV ANTON ,  CHAN CHIU ,  LIU SHUANG

Inventor： BALASUBRAMANIAN GANESH ,  BANSAL AMIT ,  JUCO ELLER Y ,  AYOUB MOHAMAD ,  KIM HYUNG-JOON ,  JANAKIRAMAN KARTHIK ,  RATHI SUDHA ,  PADHI DEENESH ,  SEAMONS MARTIN JAY ,  SIVARAMAKRISHNAN VISWESWAREN ,  KIM BOK HOEN ,  AL-BAYATI AMIR ,  WITTY DEREK R ,  M SAAD HICHEM ,  BARYSHNIKOV ANTON ,  CHAN CHIU ,  LIU SHUANG

IPC: G06F11/30 ,  G06F19/00 ,  G21C17/00

CPC classification number: H01L21/6831 ,  C23C16/52 ,  H01J37/32431 ,  H01L21/67069 ,  H01L21/67253

Abstract: The present invention generally provides methods and apparatus for monitoring and maintaining flatness of a substrate in a plasma reactor. Certain embodiments of the present invention provide a method for processing a substrate comprising positioning the substrate on an electrostatic chuck, applying an RF power between the an electrode in the electrostatic chuck and a counter electrode positioned parallel to the electrostatic chuck, applying a DC bias to the electrode in the electrostatic chuck to clamp the substrate on the electrostatic chuck, and measuring an imaginary impedance of the electrostatic chuck.

Abstract translation: 本发明总体上提供了用于监测和维持等离子体反应器中的衬底的平坦度的方法和设备。 本发明的某些实施例提供了一种用于处理衬底的方法，包括：将衬底定位在静电吸盘上;在静电吸盘中的电极和平行于静电吸盘定位的反电极之间施加RF功率;将DC偏压施加到 静电吸盘中的电极夹紧静电吸盘上的基片，并测量静电吸盘的虚阻抗。

公开(公告)号：WO2005087974A3

公开(公告)日：2005-12-15

申请号：PCT/US2005005855

申请日：2005-02-24

Applicant: APPLIED MATERIALS INC ,  SEAMONS MARTIN JAY ,  YEH WENDY H ,  RATHI SUDHA S R ,  PADHI DEENESH ,  LUAN ANDY HSIN CHIAO ,  TANG SUM-YEE BETTY ,  KULKARNI PRIYA ,  SIVARAMAKRISHNAN VISWESWAREN ,  KIM BOK HOEN ,  M SAAD HICHEM ,  WANG YUXIANG MAY ,  KWAN MICHAEL CHIU

Inventor： SEAMONS MARTIN JAY ,  YEH WENDY H ,  RATHI SUDHA S R ,  PADHI DEENESH ,  LUAN ANDY HSIN CHIAO ,  TANG SUM-YEE BETTY ,  KULKARNI PRIYA ,  SIVARAMAKRISHNAN VISWESWAREN ,  KIM BOK HOEN ,  M SAAD HICHEM ,  WANG YUXIANG MAY ,  KWAN MICHAEL CHIU

IPC: C23C16/505 ,  H01L21/314 ,  H01L21/768 ,  C23C16/26

CPC classification number: C23C16/505 ,  H01L21/3146 ,  H01L21/76801 ,  H01L21/76802 ,  H01L21/7681 ,  H01L21/76829

Abstract: Methods are provided for depositing amorphous carbon materials. In one aspect, the invention provides a method for processing a substrate including positioning the substrate in a processing chamber, introducing a processing gas into the processing chamber, wherein the processing gas comprises a carrier gas, hydrogen, and one or more precursor compounds, generating a plasma of the processing gas by applying power from a dual-frequency RF source, and depositing an amorphous carbon layer on the substrate.

Abstract translation: 提供了沉积无定形碳材料的方法。 一方面，本发明提供了一种处理衬底的方法，包括将衬底定位在处理室中，将处理气体引入处理室，其中处理气体包括载气，氢气和一种或多种前体化合物，产生 处理气体的等离子体，通过从双频RF源施加电力，以及在基板上沉积无定形碳层。