公开(公告)号：WO2012060993A2

公开(公告)日：2012-05-10

申请号：PCT/US2011056281

申请日：2011-10-14

Applicant: MICRON TECHNOLOGY INC ,  SILLS SCOTT E ,  MEADE ROY E

Inventor： SILLS SCOTT E ,  MEADE ROY E

IPC: H01L21/8247 ,  H01L21/8242 ,  H01L27/108 ,  H01L27/115

CPC classification number: H01L45/1666 ,  H01L21/76834 ,  H01L21/76883 ,  H01L27/2463 ,  H01L27/2472 ,  H01L45/04 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/144 ,  H01L45/147 ,  H01L45/1608 ,  H01L45/1675

Abstract: Some embodiments include methods of forming electrical components. First and second exposed surface configurations are formed over a first structure, and material is then formed across the surface configurations. The material is sub-divided amongst two or more domains, with a first of the domains being induced by the first surface configuration, and with a second of the domains being induced by the second surface configuration. A second structure is then formed over the material. The first domains of the material are incorporated into electrical components. The second domains may be replaced with dielectric material to provide isolation between adjacent electrical components, or may be utilized as intervening regions between adjacent electrical components.

Abstract translation: 一些实施例包括形成电气部件的方法。 在第一结构上形成第一和第二暴露表面结构，然后在表面结构上形成材料。 材料在两个或更多个区域中被细分，其中第一个区域由第一表面构造诱导，并且第二个区域由第二表面构造诱导。 然后在材料上形成第二结构。 材料的第一个领域被纳入电子元件。 第二区域可以被电介质材料替代以提供相邻电组件之间的隔离，或者可以被用作相邻电组件之间的中间区域。

公开(公告)号：WO2010104744A2

公开(公告)日：2010-09-16

申请号：PCT/US2010/026235

申请日：2010-03-04

Applicant: MICRON TECHNOLOGY, INC. ,  MEADE, Roy E. ,  SANDHU, Gurtej S.

Inventor： MEADE, Roy E. ,  SANDHU, Gurtej S.

IPC: H01L21/60 ,  G11C11/15

CPC classification number: H05K1/0298 ,  B82Y99/00 ,  G11C8/08 ,  G11C8/10 ,  G11C11/14 ,  G11C11/15 ,  G11C11/16 ,  G11C11/161 ,  G11C19/0808 ,  H01L24/02 ,  H01L24/80 ,  H01L2224/04042 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01093 ,  H01L2924/014 ,  H01L2924/12042 ,  H05K1/112 ,  H05K1/113 ,  H05K1/144 ,  H05K3/3436 ,  H05K3/36 ,  H05K3/4697 ,  H05K7/04 ,  H05K2201/09381 ,  Y10S977/932 ,  Y10T29/49126 ,  Y10T29/49128 ,  H01L2924/00

Abstract: Electronic devices comprise a first substrate and a second substrate. The first substrate comprises circuitry including a plurality of conductive traces at least substantially parallel to each other through at least a portion of the first substrate. A plurality of bond pads are positioned on a surface of the first substrate and comprise a width extending over at least two of the plurality of conductive traces. A plurality of vias extend from adjacent at least some of the conductive traces to the plurality of bond pads. The second substrate is bonded to the first substrate and comprises circuitry coupled to the plurality of bond pads on the first substrate with a plurality of conductive bumps. Memory devices and related methods of forming electronic devices and memory devices are also disclosed, as are electronic systems.

Abstract translation: 电子器件包括第一衬底和第二衬底。 第一衬底包括电路，其包括通过至少一部分第一衬底彼此至少基本平行的多个导电迹线。 多个接合焊盘定位在第一基板的表面上并且包括在多个导电迹线中的至少两个上延伸的宽度。 多个通孔从相邻的至少一些导电迹线延伸到多个接合焊盘。 第二衬底被结合到第一衬底并且包括用多个导电凸块耦合到第一衬底上的多个接合焊盘的电路。 还公开了形成电子设备和存储器件的存储器件和相关方法，电子系统也是如此。

公开(公告)号：WO2010104744A3

公开(公告)日：2011-01-06

申请号：PCT/US2010026235

申请日：2010-03-04

Applicant: MICRON TECHNOLOGY INC ,  MEADE ROY E ,  SANDHU GURTEJ S

Inventor： MEADE ROY E ,  SANDHU GURTEJ S

IPC: H01L21/60 ,  G11C11/15

CPC classification number: H05K1/0298 ,  B82Y99/00 ,  G11C8/08 ,  G11C8/10 ,  G11C11/14 ,  G11C11/15 ,  G11C11/16 ,  G11C11/161 ,  G11C19/0808 ,  H01L24/02 ,  H01L24/80 ,  H01L2224/04042 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01093 ,  H01L2924/014 ,  H01L2924/12042 ,  H05K1/112 ,  H05K1/113 ,  H05K1/144 ,  H05K3/3436 ,  H05K3/36 ,  H05K3/4697 ,  H05K7/04 ,  H05K2201/09381 ,  Y10S977/932 ,  Y10T29/49126 ,  Y10T29/49128 ,  H01L2924/00

Abstract: Electronic devices comprise a first substrate and a second substrate. The first substrate comprises circuitry including a plurality of conductive traces at least substantially parallel to each other through at least a portion of the first substrate. A plurality of bond pads are positioned on a surface of the first substrate and comprise a width extending over at least two of the plurality of conductive traces. A plurality of vias extend from adjacent at least some of the conductive traces to the plurality of bond pads. The second substrate is bonded to the first substrate and comprises circuitry coupled to the plurality of bond pads on the first substrate with a plurality of conductive bumps. Memory devices and related methods of forming electronic devices and memory devices are also disclosed, as are electronic systems.

Abstract translation: 电子器件包括第一衬底和第二衬底。 第一衬底包括电路，其包括通过至少一部分第一衬底彼此至少基本平行的多个导电迹线。 多个接合焊盘定位在第一基板的表面上并且包括在多个导电迹线中的至少两个上延伸的宽度。 多个通孔从相邻的至少一些导电迹线延伸到多个接合焊盘。 第二衬底被结合到第一衬底并且包括用多个导电凸块耦合到第一衬底上的多个接合焊盘的电路。 还公开了形成电子设备和存储器件的存储器件和相关方法，电子系统也是如此。

公开(公告)号：WO2012060993A3

公开(公告)日：2012-05-10

申请号：PCT/US2011/056281

申请日：2011-10-14

Applicant: MICRON TECHNOLOGY, INC. ,  SILLS, Scott, E. ,  MEADE, Roy, E.

Inventor： SILLS, Scott, E. ,  MEADE, Roy, E.

IPC: H01L21/8247 ,  H01L27/115 ,  H01L21/8242 ,  H01L27/108

Abstract: Some embodiments include methods of forming electrical components. First and second exposed surface configurations are formed over a first structure, and material is then formed across the surface configurations. The material is sub-divided amongst two or more domains, with a first of the domains being induced by the first surface configuration, and with a second of the domains being induced by the second surface configuration. A second structure is then formed over the material. The first domains of the material are incorporated into electrical components. The second domains may be replaced with dielectric material to provide isolation between adjacent electrical components, or may be utilized as intervening regions between adjacent electrical components.

公开(公告)号：WO2011100138A3

公开(公告)日：2011-12-01

申请号：PCT/US2011023190

申请日：2011-01-31

Applicant: MICRON TECHNOLOGY INC ,  MEADE ROY E

Inventor： MEADE ROY E

IPC: G11C11/00 ,  G11C7/10

CPC classification number: G11C11/24 ,  G11C8/08 ,  G11C11/34 ,  G11C11/56 ,  G11C11/565 ,  G11C11/5685 ,  G11C13/0002 ,  G11C13/0007 ,  G11C13/0011 ,  G11C13/004 ,  G11C13/0061 ,  G11C13/0069 ,  H01L27/101 ,  H01L28/40 ,  H01L45/08 ,  H01L45/12 ,  H01L45/1233

Abstract: Cross-point memory cells, non-volatile memory arrays, methods of reading a memory cell, methods of programming a memory cell, and methods of writing to and reading from a memory cell are described. In one embodiment, a cross-point memory cell includes a word line extending in a first direction, a bit line extending in a second direction different from the first direction, the bit line and the word line crossing without physically contacting each other, and a capacitor formed between the word line and the bit line where such cross. The capacitor comprises a dielectric material configured to prevent DC current from flowing from the word line to the bit line and from the bit line to the word line.

Abstract translation: 描述了交叉点存储器单元，非易失性存储器阵列，读取存储器单元的方法，对存储器单元进行编程的方法以及对存储器单元进行写入和读取的方法。 在一个实施例中，交叉点存储器单元包括在第一方向上延伸的字线，在与第一方向不同的第二方向上延伸的位线，位线和字线交叉而彼此不物理接触，以及 电容器形成在字线和位线之间的这种交叉处。 该电容器包括电介质材料，该电介质材料被配置为防止DC电流从字线流到位线以及从位线流到字线。

公开(公告)号：WO2011100108A3

公开(公告)日：2011-11-24

申请号：PCT/US2011022390

申请日：2011-01-25

Applicant: MICRON TECHNOLOGY INC ,  MEADE ROY E ,  SANDHU GURTEJ S

Inventor： MEADE ROY E ,  SANDHU GURTEJ S

IPC: H01L27/115 ,  H01L21/8247

CPC classification number: H01L29/7841 ,  G11C11/565 ,  G11C13/0002 ,  G11C13/0007 ,  G11C13/0069 ,  G11C2213/51 ,  G11C2213/53 ,  G11C2213/77 ,  H01L21/28273 ,  H01L21/28282 ,  H01L27/0629 ,  H01L28/40 ,  H01L29/792

Abstract: A memcapacitor device includes a pair of opposing conductive electrodes. A semiconductive material including mobile dopants within a dielectric and a mobile dopant barrier dielectric material are received between the pair of opposing conductive electrodes. The semiconductive material and the barrier dielectric material are of different composition relative one another which is at least characterized by at least one different atomic element. One of the semiconductive material and the barrier dielectric material is closer to one of the pair of electrodes than is the other of the semiconductive material and the barrier dielectric material. The other of the semiconductive material and the barrier dielectric material is closer to the other of the pair of electrodes than is the one of the semiconductive material and the barrier dielectric material. Other implementations are disclosed, including field effect transistors, memory arrays, and methods.

Abstract translation: 忆阻器装置包括一对相对的导电电极。 包括电介质内的移动掺杂剂和移动掺杂剂阻挡电介质材料的半导体材料被接收在所述一对相对的导电电极之间。 半导体材料和势垒电介质材料彼此具有不同的组成，其至少由至少一种不同的原子元素表征。 半导体材料和势垒电介质材料中的一个比半导电材料和势垒电介质材料中的另一个更靠近电极对中的一个。 另一个半导体材料和势垒电介质材料比半导体材料和势垒电介质材料中的另一个更靠近该对电极中的另一个。 公开了其他实现方式，包括场效应晶体管，存储器阵列和方法。

公开(公告)号：WO2011100108A2

公开(公告)日：2011-08-18

申请号：PCT/US2011/022390

申请日：2011-01-25

Applicant: MICRON TECHNOLOGY, INC. ,  MEADE, Roy, E. ,  SANDHU, Gurtej, S.

Inventor： MEADE, Roy, E. ,  SANDHU, Gurtej, S.

IPC: H01L27/115 ,  H01L21/8247

CPC classification number: H01L29/7841 ,  G11C11/565 ,  G11C13/0002 ,  G11C13/0007 ,  G11C13/0069 ,  G11C2213/51 ,  G11C2213/53 ,  G11C2213/77 ,  H01L21/28273 ,  H01L21/28282 ,  H01L27/0629 ,  H01L28/40 ,  H01L29/792

Abstract: A memcapacitor device includes a pair of opposing conductive electrodes. A semiconductive material including mobile dopants within a dielectric and a mobile dopant barrier dielectric material are received between the pair of opposing conductive electrodes. The semiconductive material and the barrier dielectric material are of different composition relative one another which is at least characterized by at least one different atomic element. One of the semiconductive material and the barrier dielectric material is closer to one of the pair of electrodes than is the other of the semiconductive material and the barrier dielectric material. The other of the semiconductive material and the barrier dielectric material is closer to the other of the pair of electrodes than is the one of the semiconductive material and the barrier dielectric material. Other implementations are disclosed, including field effect transistors, memory arrays, and methods.

Abstract translation: 电容器装置包括一对相对的导电电极。 包括电介质中的移动掺杂剂和可移动掺杂剂阻挡介电材料的半导体材料被接收在该对相对的导电电极之间。 半导体材料和阻挡介电材料的组成彼此不同，其至少特征在于至少一种不同的原子元素。 半导体材料和阻挡介电材料之一比半导体材料和阻挡介电材料中的另一个更靠近一对电极之一。 半导体材料和阻挡介电材料中的另一个比半导体材料和阻挡介电材料中的一个更接近于该对电极中的另一个。 公开了其他实现方式，包括场效应晶体管，存储器阵列和方法。

公开(公告)号：WO2011100138A2

公开(公告)日：2011-08-18

申请号：PCT/US2011/023190

申请日：2011-01-31

Applicant: MICRON TECHNOLOGY, INC ,  MEADE, Roy, E.

Inventor： MEADE, Roy, E.

IPC: G11C11/00 ,  G11C7/10

CPC classification number: G11C11/24 ,  G11C8/08 ,  G11C11/34 ,  G11C11/56 ,  G11C11/565 ,  G11C11/5685 ,  G11C13/0002 ,  G11C13/0007 ,  G11C13/0011 ,  G11C13/004 ,  G11C13/0061 ,  G11C13/0069 ,  H01L27/101 ,  H01L28/40 ,  H01L45/08 ,  H01L45/12 ,  H01L45/1233

Abstract: Cross-point memory cells, non-volatile memory arrays, methods of reading a memory cell, methods of programming a memory cell, and methods of writing to and reading from a memory cell are described. In one embodiment, a cross-point memory cell includes a word line extending in a first direction, a bit line extending in a second direction different from the first direction, the bit line and the word line crossing without physically contacting each other, and a capacitor formed between the word line and the bit line where such cross. The capacitor comprises a dielectric material configured to prevent DC current from flowing from the word line to the bit line and from the bit line to the word line.

Abstract translation: 描述了交叉点存储器单元，非易失性存储器阵列，读取存储器单元的方法，编程存储器单元的方法，以及写入存储器单元和从存储器单元读取的方法。 在一个实施例中，交叉点存储单元包括在第一方向上延伸的字线，在与第一方向不同的第二方向上延伸的位线，位线和字线交叉而不物理接触， 电容之间形成了字线与位线之间的交叉。 电容器包括被配置为防止直流电流从字线流到位线和从位线到字线的电介质材料。