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    EXTENSION OF CONTACT PADS TO THE DIE EDGE WITH ELECTRICAL ISOLATION
    1.
    发明申请
    EXTENSION OF CONTACT PADS TO THE DIE EDGE WITH ELECTRICAL ISOLATION 审中-公开
    通过电气隔离将接触垫延伸到DIE边缘

    公开(公告)号：WO2010128415A1

    公开(公告)日：2010-11-11

    申请号：PCT/IB2010/051627

    申请日：2010-04-14

    Applicant: PHILIPS LUMILEDS LIGHTING COMPANY, LLC ,  KONINKLIJKE PHILIPS ELECTRONICS N.V. ,  MARGALITH, Tal ,  SCHIAFFINO, Stefano ,  CHOY, Henry Kwong-Hin

    Inventor： MARGALITH, Tal ,  SCHIAFFINO, Stefano ,  CHOY, Henry Kwong-Hin

    IPC: H01L33/38 ,  H01L33/20 ,  H01L33/44

    CPC classification number: H01L33/385 ,  H01L33/20 ,  H01L33/44 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: Light emitting diode (LED) dies are fabricated by forming LED layers including a first conductivity type layer, a light-emitting layer, and a second conductivity type layer. Trenches are formed in the LED layers that reach at least partially into the first conductivity type layer. Electrically insulation regions are formed in or next to at least portions of the first conductivity type layer along the die edges. A first conductivity bond pad layer is formed to electrically contact the first conductivity type layer and extend over the singulation streets between the LED dies. A second conductivity bond pad layer is formed to electrically contact the second conductivity type layer, and extend over the singulation streets between the LED dies and the electrically insulated portions of the first conductivity type layer. The LED dies are mounted to submounts and the LED dies are singulated along the singulation streets between the LED dies.

    Abstract translation: 通过形成包括第一导电类型层，发光层和第二导电类型层的LED层来制造发光二极管（LED）管芯。 在LED层中形成沟槽，其至少部分地到达第一导电类型层。 电绝缘区域沿着模头边缘形成在第一导电类型层的至少一部分中或其旁边。 第一导电接合焊盘层形成为与第一导电类型层电接触并且在LED管芯之间的分隔街道上延伸。 第二导电接合焊盘层形成为与第二导电类型层电接触，并且延伸在LED管芯与第一导电类型层的电绝缘部分之间的分隔街道上。 LED管芯安装到基座上，LED管芯沿着LED管芯之间的单线路划分。

    METHOD OF BONDING A SEMICONDUCTOR DEVICE USING A COMPLIANT BONDING STRUCTURE
    2.
    发明申请
    METHOD OF BONDING A SEMICONDUCTOR DEVICE USING A COMPLIANT BONDING STRUCTURE 审中-公开
    使用合适的结合结构结合半导体器件的方法

    公开(公告)号：WO2010100577A2

    公开(公告)日：2010-09-10

    申请号：PCT/IB2010/050748

    申请日：2010-02-19

    Applicant: PHILIPS LUMILEDS LIGHTING COMPANY, LLC ,  KONINKLIJKE PHILIPS ELECTRONICS N.V. ,  NEFF, James G. ,  EPLER, John E. ,  SCHIAFFINO, Stefano

    Inventor： NEFF, James G. ,  EPLER, John E. ,  SCHIAFFINO, Stefano

    IPC: H01L33/48 ,  H01L33/62 ,  H01L33/38 ,  H01L21/60 ,  H01L33/00

    CPC classification number: H01L33/62 ,  H01L33/0079 ,  H01L33/38 ,  H01L2224/8112 ,  H01L2224/81801

    Abstract: A compliant bonding structure is disposed between a semiconductor device and a mount (40). In some embodiments, the device is a light emitting device. When the semiconductor light emitting device is attached to the mount, for example by providing ultrasonic energy to the semiconductor light emitting device, the compliant bonding structure collapses to partially fill a space between the semiconductor light emitting device and the mount. In some embodiments, the compliant bonding structure is plurality of metal bumps (32) that undergo plastic deformation during bonding. In some embodiments, the compliant bonding structure is a porous metal layer (46).

    Abstract translation: 在半导体器件和安装件（40）之间设置有兼容的结合结构。 在一些实施例中，该装置是发光装置。 当半导体发光器件例如通过向半导体发光器件提供超声能量而将半导体发光器件附接到安装件时，柔性结合结构塌陷以部分地填充半导体发光器件和安装件之间的空间。 在一些实施例中，柔性接合结构是在接合期间经历塑性变形的多个金属凸块（32）。 在一些实施例中，柔性结合结构是多孔金属层（46）。

    ELECTRICAL CONTACTS FOR A SEMICONDUCTOR LIGHT EMITTING APPARATUS
    3.
    发明申请
    ELECTRICAL CONTACTS FOR A SEMICONDUCTOR LIGHT EMITTING APPARATUS 审中-公开
    用于半导体发光设备的电触点

    公开(公告)号：WO2008047325A2

    公开(公告)日：2008-04-24

    申请号：PCT/IB2007/054250

    申请日：2007-10-18

    Applicant: PHILIPS LUMILEDS LIGHTING COMPANY, LLC ,  SCHIAFFINO, Stefano ,  UEBBING, John Julian

    Inventor： SCHIAFFINO, Stefano ,  UEBBING, John Julian

    IPC: H01L33/00

    CPC classification number: H01L33/382 ,  H01L33/20

    Abstract: A process for forming electrical contacts for a semiconductor light emitting apparatus is disclosed. The light emitting apparatus has a first layer of first conductivity type, an active layer for generating light overlying the first layer, and a second layer of second conductivity type overlying the active layer. The process involves forming at least a first and a second elongate electrical contact through the second layer and the active layer to provide electrical connection to the first layer, the first and second contacts oriented at an angle to each other, the first contact having a first end in proximity with the second contact, the first end being sufficiently spaced apart from the second contact such that when current is supplied to the first layer through the contacts, current contributions from the first end of the first contact and the second contact in an area generally between the first end and the second contact cause a current density in the area that is approximately equal to a current density elsewhere along the first and second contacts.

    Abstract translation: 公开了一种用于形成半导体发光装置的电触点的过程。 发光装置具有第一导电类型的第一层，用于产生覆盖第一层的光的有源层以及覆盖有源层的第二导电类型的第二层。 该方法包括形成穿过第二层和有源层的至少第一和第二细长电触点，以提供到第一层的电连接，第一和第二触点彼此成一定角度取向，第一触点具有第一 结束于所述第二触点附近，所述第一端与所述第二触点充分间隔开，使得当电流通过所述触点供应至所述第一层时，来自所述第一触点的所述第一端和所述第二触点的电流贡献在区域 通常在第一端和第二接触之间导致该区域中的电流密度大致等于沿着第一和第二接触的其它地方的电流密度。

    ELECTRICAL CONTACTS FOR A SEMICONDUCTOR LIGHT EMITTING APPARATUS
    5.
    发明申请
    ELECTRICAL CONTACTS FOR A SEMICONDUCTOR LIGHT EMITTING APPARATUS 审中-公开
    用于半导体发光装置的电气接触

    公开(公告)号：WO2008047325A3

    公开(公告)日：2008-06-19

    申请号：PCT/IB2007054250

    申请日：2007-10-18

    Applicant: PHILIPS LUMILEDS LIGHTING CO ,  SCHIAFFINO STEFANO ,  UEBBING JOHN JULIAN

    Inventor： SCHIAFFINO STEFANO ,  UEBBING JOHN JULIAN

    IPC: H01L33/20 ,  H01L33/38

    CPC classification number: H01L33/382 ,  H01L33/20

    Abstract: A process for forming electrical contacts for a semiconductor light emitting apparatus is disclosed. The light emitting apparatus has a first layer of first conductivity type, an active layer for generating light overlying the first layer, and a second layer of second conductivity type overlying the active layer. The process involves forming at least a first and a second elongate electrical contact through the second layer and the active layer to provide electrical connection to the first layer, the first and second contacts oriented at an angle to each other, the first contact having a first end in proximity with the second contact, the first end being sufficiently spaced apart from the second contact such that when current is supplied to the first layer through the contacts, current contributions from the first end of the first contact and the second contact in an area generally between the first end and the second contact cause a current density in the area that is approximately equal to a current density elsewhere along the first and second contacts.

    Abstract translation: 公开了一种用于形成用于半导体发光装置的电触头的工艺。 发光装置具有第一导电类型的第一层，用于产生覆盖第一层的光的有源层和覆盖有源层的第二导电类型的第二层。 该方法包括通过第二层和有源层至少形成第一和第二细长电接触以提供与第一层的电连接，第一和第二接触彼此成一定角度，第一接触具有第一 在第二触点附近端部，第一端与第二触点充分隔开，使得当电流通过触点供应到第一层时，来自第一触点的第一端和第一触点的区域中的电流贡献 通常在第一端和第二接触之间引起区域中的电流密度近似等于沿着第一和第二接触件的其他地方的电流密度。

    METHOD OF BONDING A SEMICONDUCTOR DEVICE USING A COMPLIANT BONDING STRUCTURE
    7.
    发明申请
    METHOD OF BONDING A SEMICONDUCTOR DEVICE USING A COMPLIANT BONDING STRUCTURE 审中-公开
    使用符合结合结构的半导体装置的结合方法

    公开(公告)号：WO2010100577A3

    公开(公告)日：2010-10-28

    申请号：PCT/IB2010050748

    申请日：2010-02-19

    Applicant: PHILIPS LUMILEDS LIGHTING CO ,  KONINKL PHILIPS ELECTRONICS NV ,  NEFF JAMES G ,  EPLER JOHN E ,  SCHIAFFINO STEFANO

    Inventor： NEFF JAMES G ,  EPLER JOHN E ,  SCHIAFFINO STEFANO

    IPC: H01L33/48 ,  H01L21/60 ,  H01L33/00 ,  H01L33/38 ,  H01L33/62

    CPC classification number: H01L33/62 ,  H01L33/0079 ,  H01L33/38 ,  H01L2224/8112 ,  H01L2224/81801

    Abstract: A compliant bonding structure is disposed between a semiconductor device and a mount (40). In some embodiments, the device is a light emitting device. When the semiconductor light emitting device is attached to the mount, for example by providing ultrasonic energy to the semiconductor light emitting device, the compliant bonding structure collapses to partially fill a space between the semiconductor light emitting device and the mount. In some embodiments, the compliant bonding structure is plurality of metal bumps (32) that undergo plastic deformation during bonding. In some embodiments, the compliant bonding structure is a porous metal layer (46).

    Abstract translation: 顺应性接合结构设置在半导体器件和安装件（40）之间。 在一些实施例中，该装置是发光装置。 当半导体发光器件例如通过向半导体发光器件提供超声波能量而附着于安装件时，顺应性接合结构塌陷以部分地填充半导体发光器件与安装件之间的空间。 在一些实施例中，柔性结合结构是在结合期间经历塑性变形的多个金属凸块（32）。 在一些实施例中，柔性结合结构是多孔金属层（46）。

    LED ASSEMBLY HAVING MAXIMUM METAL SUPPORT FOR LASER LIFT-OFF OF GROWTH SUBSTRATE
    8.
    发明申请
    LED ASSEMBLY HAVING MAXIMUM METAL SUPPORT FOR LASER LIFT-OFF OF GROWTH SUBSTRATE 审中-公开
    具有最大金属支持的LED组件用于增长基板的激光提升

    公开(公告)号：WO2008072204A1

    公开(公告)日：2008-06-19

    申请号：PCT/IB2007/055091

    申请日：2007-12-13

    Applicant: PHILIPS LUMILEDS LIGHTING COMPANY, LLC ,  KONINKLIJKE PHILIPS ELECTRONICS N.V. ,  SCHIAFFINO, Stefano ,  STEIGERWALD, Daniel A. ,  HOLCOMB, Mari ,  BASIN, Grigoriy ,  MARTIN, Paul ,  EPLER, John

    Inventor： SCHIAFFINO, Stefano ,  STEIGERWALD, Daniel A. ,  HOLCOMB, Mari ,  BASIN, Grigoriy ,  MARTIN, Paul ,  EPLER, John

    IPC: H01L33/00

    CPC classification number: H01L33/0079 ,  H01L33/22 ,  H01L33/32 ,  H01L33/382 ,  H01L33/40 ,  H01L33/62 ,  H01L2224/73204 ,  H01L2924/01322 ,  H01L2924/00

    Abstract: Described is a process for forming an LED structure using a laser lift-off process (72) to remove the growth substrate (e.g., sapphire) (28) after the LED die is bonded to a submount (56). The underside of the LED die has formed on it anode (36, 40) and cathode (34, 38) electrodes that are substantially in the same plane, where the electrodes cover at least 85% of the back surface of the LED structure. The submount has a corresponding layout of anode (60) and cathode (58) electrodes substantially in the same plane. The LED die electrodes and submount electrodes are ultrasonically welded together such that virtually the entire surface of the LED die is supported by the electrodes and submount. Other bonding techniques may also be used. No underfill is used. The growth substrate, forming the top of the LED structure, is then removed from the LED layers using a laser lift-off process. The extremely high pressures created during the laser lift-off process do not damage the LED layers due to the large area support of the LED layers by the electrodes and submount.

    Abstract translation: 描述了在将LED管芯接合到基座（56）之后，使用激光剥离工艺（72）形成LED结构以去除生长衬底（例如，蓝宝石）（28）的工艺。 LED芯片的下侧在其上形成基本上在同一平面中的阳极（36,40）和阴极（34,38）电极，其中电极覆盖LED结构的后表面的至少85％。 基座具有基本上在同一平面中的阳极（60）和阴极（58）电极的对应布局。 LED芯片电极和基座电极被超声波焊接在一起，使得LED芯片的整个表面实际上被电极和底座支撑。 也可以使用其它粘合技术。 没有使用底层填料。 然后使用激光剥离工艺从LED层去除形成LED结构顶部的生长衬底。 在激光剥离过程中产生的极高的压力不会由于电极和基座的LED层的大面积支撑而损坏LED层。

    SYSTEM, METHOD, AND DEVICE FOR FORMING AN ARRAY OF EMULSIONS
    9.
    发明申请
    SYSTEM, METHOD, AND DEVICE FOR FORMING AN ARRAY OF EMULSIONS 审中-公开

    公开(公告)号：WO2018148693A1

    公开(公告)日：2018-08-16

    申请号：PCT/US2018/017883

    申请日：2018-02-12

    Applicant: BIO-RAD LABORATORIES, INC. ,  CAULEY, Trey ,  DZENITIS, John ,  HOBBS, Steve ,  SCHIAFFINO, Stefano

    Inventor： CAULEY, Trey ,  DZENITIS, John ,  HOBBS, Steve ,  SCHIAFFINO, Stefano

    IPC: B01L3/00 ,  A61K9/107

    Abstract: Systems, methods, and devices for forming an array of emulsions. An exemplary device comprises a frame and at least one or a plurality of separate microfluidic modules mounted to the frame and each configured to form an array of emulsions. In some embodiments, each module may be mounted by snap-fit attachment. The device also may include the same sealing member bonded to a top side of each module and hermetically sealing each of the modules. Another exemplary microfluidic device for forming an array of emulsions comprises a stack of layers bonded together. The stack may comprise a port layer forming a plurality of ports. Each port may have a top rim formed by a protrusion that encircles the central axis of the port. The rims may be coplanar with one another to facilitate bonding of a sealing member to each rim.

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