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    SYSTEMS AND METHODS FOR ASSESSING TEAM DYNAMICS AND EFFECTIVENESS
    2.
    发明申请
    SYSTEMS AND METHODS FOR ASSESSING TEAM DYNAMICS AND EFFECTIVENESS 审中-公开
    用于评估团队动态和有效性的系统和方法

    公开(公告)号：WO2011090722A2

    公开(公告)日：2011-07-28

    申请号：PCT/US2010062252

    申请日：2010-12-28

    Applicant: ADVANCED BRAIN MONITORING INC ,  STEVENS RONALD H ,  BERKA CHRISTINE ,  BEHNEMAN ADRIENNE ,  LEVENDOWSKI DANIEL

    Inventor： STEVENS RONALD H ,  BERKA CHRISTINE ,  BEHNEMAN ADRIENNE ,  LEVENDOWSKI DANIEL

    IPC: G06F17/00 ,  G06F9/455 ,  G06F19/00

    CPC classification number: G06Q10/00

    Abstract: Techniques for monitoring neurophysiologic indicators of the members of a team while performing one or more collaborative tasks, for analyzing the collected neurophysiologic data and environmental data, for generating feedback, and for generating assessments of the performance of the team based on the collected data are provided. Feedback can be created based on the assessments of the team performance. Assessments of team performance can be performed in real time and feedback can also be provided in real time. In other embodiments, feedback can be provided to team members and/or the team as a whole after training exercise and/or simulation has been completed.

    Abstract translation: 提供了在执行一个或多个协作任务，用于分析所收集的神经生理数据和环境数据以产生反馈以及基于所收集的数据来生成评估团队绩效的情况下监视团队成员的神经生理学指标的技术。 。 可以根据团队绩效的评估来创建反馈。 团队绩效评估可以实时执行，反馈也可以实时提供。 在其他实施例中，可以在训练练习和/或模拟完成之后向团队成员和/或整体提供反馈。

    CVD APPARATUS
    3.
    发明申请
    CVD APPARATUS 审中-公开
    CVD装置

    公开(公告)号：WO2011017501A2

    公开(公告)日：2011-02-10

    申请号：PCT/US2010/044521

    申请日：2010-08-05

    Applicant: APPLIED MATERIALS, INC. ,  BURROWS, Brian H. ,  STEVENS, Ronald ,  GRAYSON, Jacob ,  PODESTA, Joshua J. ,  NIJHAWAN, Sandeep ,  WASHINGTON, Lori D. ,  TAM, Alexander ,  ACHARYA, Sumedh

    Inventor： BURROWS, Brian H. ,  STEVENS, Ronald ,  GRAYSON, Jacob ,  PODESTA, Joshua J. ,  NIJHAWAN, Sandeep ,  WASHINGTON, Lori D. ,  TAM, Alexander ,  ACHARYA, Sumedh

    IPC: H01L21/683 ,  H01L21/205

    CPC classification number: H01L21/67115 ,  C23C16/4412 ,  C23C16/4584 ,  C23C16/481 ,  H01L21/68742 ,  H01L21/68792

    Abstract: Embodiments of the present invention generally relate to methods and apparatus for chemical vapor deposition (CVD) on a substrate, and, in particular, to a process chamber and components for use in metal organic chemical vapor deposition. The apparatus comprises a chamber body defining a process volume. A showerhead in a first plane defines a top portion of the process volume. A carrier plate extends across the process volume in a second plane forming an upper process volume between the showerhead and the susceptor plate. A transparent material in a third plane defines a bottom portion of the process volume forming a lower process volume between the carrier plate and the transparent material. A plurality of lamps forms one or more zones located below the transparent material. The apparatus provides uniform precursor flow and mixing while maintaining a uniform temperature over larger substrates thus yielding a corresponding increase in throughput.

    Abstract translation: 本发明的实施方案一般涉及用于基板上的化学气相沉积（CVD）的方法和装置，特别涉及用于金属有机化学气相沉积的处理室和组件。 该装置包括限定过程体积的室主体。 第一平面中的喷头定义了处理体积的顶部。 载体板在第二平面中延伸过程体积，形成喷头和基座板之间的上部处理体积。 在第三平面中的透明材料限定了工艺体积的底部，从而在承载板和透明材料之间形成较低的工艺体积。 多个灯形成位于透明材料下方的一个或多个区域。 该装置提供均匀的前体流动和混合，同时在较大的底物上保持均匀的温度，从而产生相应的生产量增加。

    METHOD FOR MEASURING PRECURSOR AMOUNTS IN BUBBLER SOURCES
    4.
    发明申请
    METHOD FOR MEASURING PRECURSOR AMOUNTS IN BUBBLER SOURCES 审中-公开
    测量泡沫源前体数量的方法

    公开(公告)号：WO2008024874A2

    公开(公告)日：2008-02-28

    申请号：PCT/US2007/076570

    申请日：2007-08-22

    Applicant: APPLIED MATERIALS, INC. ,  STEVENS, Ronald ,  MCDOUGALL, Brendan ,  SMITH, Jacob ,  KWONG, Garry ,  NIJHAWAN, Sandeep ,  WASHINGTON, Lori

    Inventor： STEVENS, Ronald ,  MCDOUGALL, Brendan ,  SMITH, Jacob ,  KWONG, Garry ,  NIJHAWAN, Sandeep ,  WASHINGTON, Lori

    IPC: C23C16/52 ,  C23C16/00

    CPC classification number: C23C16/4482

    Abstract: Methods are disclosed of determining a fill level of a precursor in a bubbler. The bubbler is fluidicly coupled with a substrate processing chamber through a vapor-delivery system. The bubbler and vapor-delivery system are backfilled with a known dose of a backfill gas. A pressure and temperature of the backfill gas are determined, permitting a total volume for the backfill gas in the bubbler and vapor-delivery system to be determined by application of a gas law. The fill level of the precursor in the bubbler is determined as a difference between (1) a total volume of the bubbler and vapor-delivery system and (2) the determined total volume for the backfill gas.

    Abstract translation: 公开了确定起泡器中前体的填充水平的方法。 鼓泡器通过蒸汽输送系统与基底处理室流体耦合。 鼓泡器和蒸汽输送系统用已知剂量的回填气体回填。 确定回填气体的压力和温度，允许通过应用气体法来确定起泡器和蒸汽输送系统中回填气体的总体积。 起泡器中前体的填充水平被确定为（1）起泡器和蒸汽输送系统的总体积和（2）回填气体的确定总体积之间的差值。

    CVD APPARATUS
    7.
    发明申请
    CVD APPARATUS 审中-公开
    CVD装置

    公开(公告)号：WO2011017501A3

    公开(公告)日：2011-06-03

    申请号：PCT/US2010044521

    申请日：2010-08-05

    Applicant: APPLIED MATERIALS INC ,  BURROWS BRIAN H ,  STEVENS RONALD ,  GRAYSON JACOB ,  PODESTA JOSHUA J ,  NIJHAWAN SANDEEP ,  WASHINGTON LORI D ,  TAM ALEXANDER ,  ACHARYA SUMEDH

    Inventor： BURROWS BRIAN H ,  STEVENS RONALD ,  GRAYSON JACOB ,  PODESTA JOSHUA J ,  NIJHAWAN SANDEEP ,  WASHINGTON LORI D ,  TAM ALEXANDER ,  ACHARYA SUMEDH

    IPC: H01L21/683 ,  H01L21/205

    CPC classification number: H01L21/67115 ,  C23C16/4412 ,  C23C16/4584 ,  C23C16/481 ,  H01L21/68742 ,  H01L21/68792

    Abstract: Embodiments of the present invention generally relate to methods and apparatus for chemical vapor deposition (CVD) on a substrate, and, in particular, to a process chamber and components for use in metal organic chemical vapor deposition. The apparatus comprises a chamber body defining a process volume. A showerhead in a first plane defines a top portion of the process volume. A carrier plate extends across the process volume in a second plane forming an upper process volume between the showerhead and the susceptor plate. A transparent material in a third plane defines a bottom portion of the process volume forming a lower process volume between the carrier plate and the transparent material. A plurality of lamps forms one or more zones located below the transparent material. The apparatus provides uniform precursor flow and mixing while maintaining a uniform temperature over larger substrates thus yielding a corresponding increase in throughput.

    Abstract translation: 本发明的实施例总体上涉及用于在衬底上进行化学气相沉积（CVD）的方法和装置，并且具体地涉及用于金属有机化学气相沉积的处理室和部件。 该设备包括限定处理空间的腔室主体。 在第一平面中的喷头限定了处理空间的顶部。 承载板在第二平面上横跨处理空间延伸，从而在喷头和基座板之间形成上处理空间。 在第三平面中的透明材料限定处理空间的底部部分，从而在承载板和透明材料之间形成较低的处理空间。 多个灯形成位于透明材料下方的一个或多个区域。 该设备提供均匀的前体流动和混合，同时在较大的基材上保持均匀的温度，从而产生吞吐量的相应增加。

    CLOSED LOOP MOCVD DEPOSITION CONTROL
    8.
    发明申请
    CLOSED LOOP MOCVD DEPOSITION CONTROL 审中-公开
    闭环MOCVD沉积控制

    公开(公告)号：WO2009099776A1

    公开(公告)日：2009-08-13

    申请号：PCT/US2009031831

    申请日：2009-01-23

    Applicant: APPLIED MATERIALS INC ,  SU JIE ,  WASHINGTON LORI D ,  BOUR DAVID ,  GRAYSON JACOB ,  NIJHAWAN SANDEEP ,  STEVENS RONALD

    Inventor： SU JIE ,  WASHINGTON LORI D ,  BOUR DAVID ,  GRAYSON JACOB ,  NIJHAWAN SANDEEP ,  STEVENS RONALD

    IPC: H01L21/205 ,  H01L21/20

    CPC classification number: H01L21/67115 ,  C23C16/303 ,  C23C16/46 ,  C23C16/481 ,  C23C16/52 ,  C23C16/54 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/67207

    Abstract: A method and apparatus are provided for monitoring and controlling substrate processing parameters for a cluster tool that utilizes chemical vapor deposition and/or hydride vapor phase epitaxial (HVPE) deposition. In one embodiment, a metal organic chemical vapor deposition (MOCVD) process is used to deposit a Group Ill-nitride film on a plurality of substrates within a processing chamber. A closed-loop control system performs in-situ monitoring of the Group Ill-nitride film growth rate and adjusts film growth parameters as required to maintain a target growth rate. In another embodiment, a closed-loop control system performs in-situ monitoring of film growth parameters for multiple processing chambers for one or more film deposition systems.

    Abstract translation: 提供了一种用于监测和控制利用化学气相沉积和/或氢化物气相外延（HVPE）沉积的簇工具的衬底处理参数的方法和装置。 在一个实施例中，使用金属有机化学气相沉积（MOCVD）工艺将III族氮化物膜沉积在处理室内的多个衬底上。 闭环控制系统执行III族氮化物膜生长速率的原位监测，并根据需要调整膜生长参数以维持目标生长速率。 在另一个实施例中，闭环控制系统执行用于一个或多个成膜系统的多个处理室的膜生长参数的原位监测。

    FLUOROPOLYMERS OF TETRAFLUOROETHYLENE AND 3,3,3-TRIFLUOROPROPYLENE
    9.
    发明申请
    FLUOROPOLYMERS OF TETRAFLUOROETHYLENE AND 3,3,3-TRIFLUOROPROPYLENE 审中-公开
    四氢氟乙烯的氟聚合物和3,3,3-三氟丙烯

    公开(公告)号：WO2009097374A1

    公开(公告)日：2009-08-06

    申请号：PCT/US2009/032315

    申请日：2009-01-29

    Applicant: DUPONT PERFORMANCE ELASTOMERS L.L.C. ,  LYONS, Donald, F. ,  ORIANI, Steven, R. ,  STEVENS, Ronald, D.

    Inventor： LYONS, Donald, F. ,  ORIANI, Steven, R. ,  STEVENS, Ronald, D.

    IPC: C08F214/26

    CPC classification number: C08F214/26 ,  C08F214/262 ,  Y10T428/1379

    Abstract: Copolymer comprising at least 50 mol percent up to 85 mol percent tetrafluoroethylene (TFE), from 10 - 35 mol percent 3,3,3-trifluoropropylene (TFP), and from 0.5 - 15 mol percent of a fluorinated ethylenically unsaturated monomer of the formula RCF=CR?2#191 wherein R, which can be the same or different, is selected from the group consisting of H, F, Cl, Br, I, alkyl of from 1 to 8 carbon atoms, perfluoroalkyl of from 1 to 8 carbon atoms, and perfluoroalkylether of from 1 to 8 carbon atoms are useful as process aids and for fuel barrier applications in flexible hose constructions.

    Abstract translation: 包含至少50摩尔％至85摩尔％的四氟乙烯（TFE），10-35摩尔％3,3,3-三氟丙烯（TFP）和0.5-15摩尔％的下式的氟化烯属不饱和单体的共聚物 RCF = CR 2＃191其中R可相同或不同，选自H，F，Cl，Br，I，1至8个碳原子的烷基，1至8的全氟烷基 碳原子和1至8个碳原子的全氟烷基醚可用作加工助剂和用于柔性软管结构中的燃料阻隔应用。

    SYSTEM AND METHOD FOR QUANTIFYING STUDENT'S SCIENTIFIC PROBLEM SOLVING EFFICIENCY AND EFFECTIVENESS
    10.
    发明申请
    SYSTEM AND METHOD FOR QUANTIFYING STUDENT'S SCIENTIFIC PROBLEM SOLVING EFFICIENCY AND EFFECTIVENESS 审中-公开
    量化学生科学问题解决效率和效能的系统和方法

    公开(公告)号：WO2009039243A3

    公开(公告)日：2009-05-07

    申请号：PCT/US2008076796

    申请日：2008-09-18

    Applicant: LEARNING CHAMELEON INC ,  STEVENS RONALD H

    Inventor： STEVENS RONALD H

    IPC: G06Q50/00

    CPC classification number: G09B7/02

    Abstract: In a computer implemented system and method for analyzing problem solving abilities, analytic models are produced to quantify how students construct, modify and retain problem solving strategies as they learn to solve science problems online. Item response theory modeling is used to provide continually refined estimates of problem solving ability as students solve a series of simulations. In parallel, student's strategies are modeled by self-organizing artificial neural network analysis, using the actions that students take during problem solving as the classifying inputs. This results in strategy maps detailing the qualitative and quantitative differences among problem solving approaches. The results are used to provide reports of strategic problem solving competency for a group of students so that teachers can modify teaching strategies to overcome noted deficiencies.

    Abstract translation: 在计算机实现的用于分析问题解决能力的系统和方法中，产生分析模型以量化当学生在线解决科学问题时学生如何构建，修改和保留解决问题的策略。 项目反应理论建模用于在学生解决一系列模拟问题时提供不断精确的问题解决能力估计。 同时，学生的策略通过自组织人工神经网络分析建模，使用学生在问题解决期间采取的行动作为分类输入。 这导致战略地图详述了问题解决方法之间的定性和定量差异。 结果用于为一组学生提供战略问题解决能力报告，以便教师可以修改教学策略以克服所指出的缺陷。

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