公开(公告)号：WO2015023945A1

公开(公告)日：2015-02-19

申请号：PCT/US2014/051274

申请日：2014-08-15

Applicant: APPLIED MATERIALS, INC. ,  FORSTER, John C. ,  YUDOVSKY, Joseph ,  KWONG, Garry K ,  NGO, Tai T. ,  GRIFFIN, Kevin ,  COLLINS, Kenneth S. ,  LIU, Ren

Inventor： FORSTER, John C. ,  YUDOVSKY, Joseph ,  KWONG, Garry K ,  NGO, Tai T. ,  GRIFFIN, Kevin ,  COLLINS, Kenneth S. ,  LIU, Ren

IPC: H01L21/205 ,  H01L21/02

CPC classification number: H01J37/32091 ,  H01J37/32357 ,  H01J37/32513 ,  H01J37/32541 ,  H01J37/32568

Abstract: A modular plasma source assembly for use with a processing chamber is described. The assembly includes an RF hot electrode with an end dielectric and a sliding ground connection positioned adjacent the sides of the electrode. A seal foil connects the sliding ground connection to the housing to provide a grounded sliding ground connection separated from the hot electrode by the end dielectric. A coaxial feed line passes through a conduit into the RF hot electrode isolated from the processing environment so that the coaxial RF feed line is at atmospheric pressure while the plasma processing region is at reduced pressure.

Abstract translation: 描述了与处理室一起使用的模块化等离子体源组件。 该组件包括具有端电介质的RF热电极和邻近电极侧面定位的滑动接地连接。 密封箔将滑动接地连接到壳体，以提供通过端部电介质与热电极分离的接地滑动接地连接。 同轴馈电线通过导管进入与处理环境隔离的RF热电极，使得同轴RF馈电线处于大气压力，同时等离子体处理区域处于减压状态。

公开(公告)号：WO2008024874A3

公开(公告)日：2008-07-03

申请号：PCT/US2007076570

申请日：2007-08-22

Applicant: APPLIED MATERIALS INC ,  STEVENS RONALD ,  MCDOUGALL BRENDAN ,  SMITH JACOB ,  KWONG GARRY ,  NIJHAWAN SANDEEP ,  WASHINGTON LORI

Inventor： STEVENS RONALD ,  MCDOUGALL BRENDAN ,  SMITH JACOB ,  KWONG GARRY ,  NIJHAWAN SANDEEP ,  WASHINGTON LORI

IPC: G01F17/00 ,  G01F23/14

CPC classification number: C23C16/4482

Abstract: Methods are disclosed of determining a fill level of a precursor in a bubbler. The bubbler is fluidicly coupled with a substrate processing chamber through a vapor-delivery system. The bubbler and vapor-delivery system are backfilled with a known dose of a backfill gas. A pressure and temperature of the backfill gas are determined, permitting a total volume for the backfill gas in the bubbler and vapor-delivery system to be determined by application of a gas law. The fill level of the precursor in the bubbler is determined as a difference between (1) a total volume of the bubbler and vapor-delivery system and (2) the determined total volume for the backfill gas.

Abstract translation: 公开了确定起泡器中前体的填充水平的方法。 起泡器通过蒸气输送系统与基底处理室流体耦合。 起泡器和蒸气输送系统用已知剂量的回填气体回填。 确定回填气体的压力和温度，允许通过应用气体定律确定起泡器和蒸气输送系统中回填气体的总体积。 起泡器中的前体的填充水平被确定为（1）起泡器和蒸气输送系统的总体积和（2）确定的回填气体的总体积之间的差。

公开(公告)号：WO2013096754A1

公开(公告)日：2013-06-27

申请号：PCT/US2012/071221

申请日：2012-12-21

Applicant: APPLIED MATERIALS, INC. ,  KWONG, Garry K. ,  YUDOVSKY, Joseph ,  MARCUS, Steven D.

Inventor： KWONG, Garry K. ,  YUDOVSKY, Joseph ,  MARCUS, Steven D.

IPC: H01L21/205

CPC classification number: C23C16/448 ,  C23C16/44 ,  C23C16/45551 ,  C23C16/45563 ,  C23C16/45574

Abstract: Provided are assemblies comprising an elongate enclosure comprising a material resistant to thermal expansion at temperatures experienced in a processing chamber. At least one heating element extends along a longitudinal axis of the elongate enclosure through an open interior region allowing a flow of gases to pass the heating element in a direction substantially perpendicular to the longitudinal axis. Methods of processing substrates using a heating element to excite gaseous precursor species are also described.

Abstract translation: 提供了包括细长外壳的组件，其包括在处理室中经历的温度下耐受热膨胀的材料。 至少一个加热元件沿着细长外壳的纵向轴线延伸穿过开放的内部区域，允许气体流沿基本上垂直于纵向轴线的方向通过加热元件。 还描述了使用加热元件处理衬底以激发气态前体物质的方法。

公开(公告)号：WO2010129125A2

公开(公告)日：2010-11-11

申请号：PCT/US2010/030114

申请日：2010-04-06

Applicant: APPLIED MATERIALS, INC. ,  LI, Zhiyong ,  LUU, Chuck ,  PRABHU, Gopalakrishna B. ,  LU, Danny Cam Toan ,  KWONG, Garry ,  TANNER, David

Inventor： LI, Zhiyong ,  LUU, Chuck ,  PRABHU, Gopalakrishna B. ,  LU, Danny Cam Toan ,  KWONG, Garry ,  TANNER, David

IPC: H01L31/042 ,  H01L31/18

CPC classification number: H05K3/321 ,  H01L21/67138 ,  H01L21/67712 ,  H01L21/67727 ,  H01L21/67754 ,  H01L21/6776 ,  H01L31/0201 ,  H01L31/046 ,  H01L31/048 ,  H01L31/0512 ,  H01L31/188 ,  H05K2203/0278 ,  Y02E10/50 ,  Y10T29/49117 ,  Y10T29/49126 ,  Y10T29/4913 ,  Y10T29/49155

Abstract: Embodiments of the present invention provide a method of forming an electrical connection on a device. In one embodiment, the electrical connection is attached to the device via an adhesive having electrically conductive particles disposed therein. In one embodiment, the adhesive is cured while applying pressure such that the conductive particles align, have a reduced particle-to-particle spacing, or come into contact with each other to provide a more directly conductive (less resistive) path between the electrical connection and the device. In one embodiment of the present invention, a method for forming an electrical lead on a partially formed solar cell during formation of the solar cell device is provided. The method comprises placing a side-buss wire onto a pattern of electrically conductive adhesive disposed on a back contact layer of a solar cell device substrate, laminating the side-buss wire and electrically conductive adhesive between the solar cell device substrate and a back glass substrate to form a composite solar cell structure, and curing the electrically conductive adhesive while applying pressure and heat to the composite solar cell structure.

Abstract translation: 本发明的实施例提供了一种在设备上形成电连接的方法。 在一个实施例中，电连接通过其中布置有导电颗粒的粘合剂附接到装置。 在一个实施方案中，粘合剂在施加压力下固化，使得导电颗粒对准，具有减小的颗粒间距或彼此接触以在电连接之间提供更直接的导电（较小电阻）的路径 和设备。 在本发明的一个实施例中，提供了在形成太阳能电池器件期间在部分形成的太阳能电池上形成电引线的方法。 该方法包括将侧面布线布置在设置在太阳能电池器件基板的背接触层上的导电粘合剂图案上，在侧太阳能电池器件基板和后玻璃基板之间层叠侧母线和导电粘合剂 以形成复合太阳能电池结构，并且在对复合太阳能电池结构施加压力和加热的同时固化导电粘合剂。

公开(公告)号：WO2008067379A2

公开(公告)日：2008-06-05

申请号：PCT/US2007/085763

申请日：2007-11-28

Applicant: APPLIED MATERIALS, INC. ,  BOUR, David ,  WASHINGTON, Lori ,  NIJHAWAN, Sandeep ,  STEVENS, Ronald ,  SMITH, Jacob ,  TAM, Alexander ,  MYO, Nyi O. ,  PARK, Steve ,  TWIST, Rosemary ,  KWONG, Garry ,  SU, Jie

Inventor： BOUR, David ,  WASHINGTON, Lori ,  NIJHAWAN, Sandeep ,  STEVENS, Ronald ,  SMITH, Jacob ,  TAM, Alexander ,  MYO, Nyi O. ,  PARK, Steve ,  TWIST, Rosemary ,  KWONG, Garry ,  SU, Jie

IPC: C23C16/00

CPC classification number: C23C16/45565 ,  C23C16/45514 ,  C23C16/45572 ,  C23C16/45574

Abstract: A gaseous mixture is deposited onto a substrate surface using a showerhead. A first plenum of the showerhead has a plurality of channels fluidicly coupled with an interior of a processing chamber. A second plenum gas flows through a plurality of tubes extending from a second plenum of the showerhead through the channels into the interior of the processing chamber. The diameter of the tubes is smaller than the diameter of the channels such that a first plenum gas flows into the interior of the processing chamber through a space defined between the outer surface of the tubes and the surface of the channels. The length and diameter of the tubes determine the level of distribution and the molar ratio of the first gas and the second gas in the gaseous mixture that is deposited on the surface of the substrate.

Abstract translation: 使用喷头将气体混合物沉积到基底表面上。 喷头的第一增压室具有与处理室的内部流体耦合的多个通道。 第二增压气体流过从喷头的第二增压室通过通道延伸到处理室内部的多个管。 管的直径小于通道的直径，使得第一增压气体通过限定在管的外表面和通道表面之间的空间流入处理室的内部。 管的长度和直径确定沉积在基底表面上的气态混合物中的分布水平和第一气体与第二气体的摩尔比。

公开(公告)号：WO2014172174A1

公开(公告)日：2014-10-23

申请号：PCT/US2014/033604

申请日：2014-04-10

Applicant: APPLIED MATERIALS, INC. ,  KELKAR, Umesh M. ,  BERA, Kallol ,  RAMANATHAN, Karthik ,  KWONG, Garry K. ,  YUDOVSKY, Joseph

Inventor： KELKAR, Umesh M. ,  BERA, Kallol ,  RAMANATHAN, Karthik ,  KWONG, Garry K. ,  YUDOVSKY, Joseph

IPC: H01L21/324 ,  H01L21/683 ,  H01L21/205

CPC classification number: C23C16/46 ,  C23C16/45544 ,  C23C16/4584 ,  C23C16/481 ,  C23C16/52 ,  H01L21/67115

Abstract: Described are apparatus and methods for processing a plurality of semiconductor wafers on a susceptor assembly so that the temperature across the susceptor assembly is uniform. A plurality of linear lamps are positioned and controlled in zones to provide uniform heating.

Abstract translation: 描述了用于处理基座组件上的多个半导体晶片的装置和方法，使得基座组件上的温度是均匀的。 多个线性灯被定位和控制在区域中以提供均匀的加热。

公开(公告)号：WO2012145205A3

公开(公告)日：2013-01-24

申请号：PCT/US2012033029

申请日：2012-04-11

Applicant: APPLIED MATERIALS INC ,  YUDOVSKY JOSEPH ,  KWONG GARRY K ,  HAAS DIETER ,  MARCUS STEVEN D ,  WEIDMAN TIMOTHY W

Inventor： YUDOVSKY JOSEPH ,  KWONG GARRY K ,  HAAS DIETER ,  MARCUS STEVEN D ,  WEIDMAN TIMOTHY W

IPC: H01L21/205

CPC classification number: C23C16/45551 ,  C23C16/452 ,  C23C16/45544

Abstract: Provided are gas distribution plates for atomic layer deposition apparatus including a hot wire or hot wire unit which can be heated to excite gaseous species while processing a substrate. Methods of processing substrates using a hot wire to excite gaseous precursor species are also described.

Abstract translation: 提供了用于原子层沉积设备的气体分配板，其包括热线或热丝单元，其可以在加工基板的同时被加热以激发气态物质。 还描述了使用热丝处理衬底以激发气态前体物质的方法。

公开(公告)号：WO2012118946A2

公开(公告)日：2012-09-07

申请号：PCT/US2012027238

申请日：2012-03-01

Applicant: APPLIED MATERIALS INC ,  YUDOVSKY JOSEPH ,  KWONG GARRY K ,  CHANG MEI ,  NGUYEN ANH N ,  THOMPSON DAVID

Inventor： YUDOVSKY JOSEPH ,  KWONG GARRY K ,  CHANG MEI ,  NGUYEN ANH N ,  THOMPSON DAVID

IPC: H01L21/205

CPC classification number: C23C16/45551 ,  C23C16/45527

Abstract: Provided are atomic layer deposition apparatus and methods including a gas distribution plate comprising at least one gas injector unit. Each gas injector unit comprises a plurality of elongate gas injectors including at least two first reactive gas injectors and at least one second reactive gas injector, the at least two first reactive gas injectors surrounding the at least one second reactive gas injector. Also provided are atomic layer deposition apparatuses and methods including a gas distribution plate with a plurality of gas injector units.

Abstract translation: 提供了包括气体分配板的原子层沉积装置和方法，所述气体分配板包括至少一个气体注射器单元 每个气体喷射器单元包括多个细长气体注射器，所述多个细长气体注射器包括至少两个第一反应气体注射器和至少一个第二反应气体注射器，所述至少两个第一反应气体注射器围绕所述至少一个第二反应气体注射器。 还提供了包括具有多个气体注射器单元的气体分配板的原子层沉积装置和方法。

公开(公告)号：WO2008067379A3

公开(公告)日：2008-12-31

申请号：PCT/US2007085763

申请日：2007-11-28

Applicant: APPLIED MATERIALS INC ,  BOUR DAVID ,  WASHINGTON LORI ,  NIJHAWAN SANDEEP ,  STEVENS RONALD ,  SMITH JACOB ,  TAM ALEXANDER ,  MYO NYI O ,  PARK STEVE ,  TWIST ROSEMARY ,  KWONG GARRY ,  SU JIE

Inventor： BOUR DAVID ,  WASHINGTON LORI ,  NIJHAWAN SANDEEP ,  STEVENS RONALD ,  SMITH JACOB ,  TAM ALEXANDER ,  MYO NYI O ,  PARK STEVE ,  TWIST ROSEMARY ,  KWONG GARRY ,  SU JIE

IPC: C23C16/00 ,  C23C16/455 ,  H01L21/306

CPC classification number: C23C16/45565 ,  C23C16/45514 ,  C23C16/45572 ,  C23C16/45574

Abstract: A gaseous mixture is deposited onto a substrate (135) surface using a showerhead (130). A first plenum (210) of the showerhead has a plurality of channels (235) fluidicly coupled with an interior of a processing chamber (105) A second plenum gas flows through a plurality of tubes (240) extending from a second plenum (215) of the showerhead through the channels (235) into the interior of the processing chamber. The diameter of the tubes is smaller than the diameter of the channels such that a first plenum gas flows into the interior of the processing chamber through a space defined between the outer surface of the tubes and the surface of the channels. The length and diameter of the tubes determine the level of distribution and the molar ratio of the first gas and the second gas in the gaseous mixture that is deposited on the surface of the substrate.

Abstract translation: 使用喷头（130）将气体混合物沉积到基底（135）表面上。 喷头的第一增压室（210）具有与处理室（105）的内部流体耦合的多个通道（235）。第二增压气体流过从第二增压室（215）延伸的多个管（240） 的喷头通过通道（235）进入处理室的内部。 管的直径小于通道的直径，使得第一增压气体通过限定在管的外表面和通道表面之间的空间流入处理室的内部。 管的长度和直径确定沉积在基底表面上的气态混合物中的分布水平和第一气体与第二气体的摩尔比。

公开(公告)号：WO2013082086A1

公开(公告)日：2013-06-06

申请号：PCT/US2012/066759

申请日：2012-11-28

Applicant: APPLIED MATERIALS, INC. ,  YUDOVSKY, Joseph ,  CHANG, Mei ,  MARCUS, Steven D. ,  KWONG, Garry K.

Inventor： YUDOVSKY, Joseph ,  CHANG, Mei ,  MARCUS, Steven D. ,  KWONG, Garry K.

IPC: H01L21/205

CPC classification number: C23C16/45551

Abstract: Provided are atomic layer deposition apparatus and methods including a gas distribution plate comprising a plurality of elongate gas ports including at least one first reactive gas port in fluid communication with a first reactive gas and at least one second reactive gas port in fluid communication with a gas manifold. The gas manifold is in fluid communication with at least a second reactive gas different from the first reactive gas and a purge gas. Also provided are atomic layer deposition apparatus and methods including linear energy sources in one or more of region before the gas distribution plate and a region after the gas distribution plate.

Abstract translation: 提供的是原子层沉积装置和方法，其包括气体分配板，其包括多个细长气体端口，该多个细长气体端口包括与第一反应气体流体连通的至少一个第一反应气体端口和与气体流体连通的至少一个第二反应气体端口 多方面的。 气体歧管与不同于第一反应气体和吹扫气体的至少第二反应气体流体连通。 还提供了原子层沉积装置和方法，其包括在气体分配板之前的区域中的一个或多个区域和气体分配板之后的区域中的线性能量源。