公开(公告)号：WO2021067525A1

公开(公告)日：2021-04-08

申请号：PCT/US2020/053672

申请日：2020-10-01

Applicant: APPLIED MATERIALS, INC.

Inventor： HUNG, Steven C.H. ,  COLOMBEAU, Benjamin ,  LO, Andy ,  LEE, Byeong Chan ,  SWENBERG, Johanes F. ,  GUARINI, Theresa Kramer ,  BEVAN, Malcolm J.

IPC: H01L29/423 ,  H01L29/40 ,  H01L29/06 ,  H01L29/786 ,  H01L21/02 ,  H01L21/67 ,  C23C16/54

Abstract: Described is a method of manufacturing a gate-all-around electronic device. The method includes forming a thermal oxide layer though an enhanced in situ steam generation process in combination with atomic layer deposition of a low-κ layer. The thin thermal oxide layer passivates the interface between the silicon layer and the dielectric layer of the GAA. A passivation process after the deposition of the low-κ layer reduces the bulk trap and enhances the breakdown performance of the GAA transistor.

公开(公告)号：WO2018140474A1

公开(公告)日：2018-08-02

申请号：PCT/US2018/015018

申请日：2018-01-24

Applicant: APPLIED MATERIALS, INC.

Inventor： LI, Ning ,  BALSEANU, Mihaela ,  XIA, Li-Qun ,  YANG, Dongqing ,  ZHU, Lala ,  BEVAN, Malcolm J. ,  GUARINI, Theresa Kramer ,  YAN, Wenbo

IPC: H01L21/02 ,  H01L21/3065 ,  C23C16/455 ,  H01L21/67

Abstract: Processing platforms having a central transfer station with a robot and an environment having greater than or equal to about 0.1% by weight water vapor, a pre-clean chamber connected to a side of the transfer station and a batch processing chamber connected to a side of the transfer station. The processing platform configured to pre-clean a substrate to remove native oxides from a first surface, form a blocking layer using a alkylsilane and selectively deposit a film. Methods of using the processing platforms and processing a plurality of wafers are also described.

公开(公告)号：WO2011109266A4

公开(公告)日：2011-09-09

申请号：PCT/US2011/026423

申请日：2011-02-28

Applicant: APPLIED MATERIALS, INC. ,  GANGULY, Udayan ,  GUARINI, Theresa Kramer ,  ROGERS, Matthew Scott ,  YOKOTA, Yoshitaka ,  SWENBERG, Johanes S. ,  BEVAN, Malcolm J.

Inventor： GANGULY, Udayan ,  GUARINI, Theresa Kramer ,  ROGERS, Matthew Scott ,  YOKOTA, Yoshitaka ,  SWENBERG, Johanes S. ,  BEVAN, Malcolm J.

IPC: H01L21/318

Abstract: Methods and apparatus for selective one-step nitridation of semiconductor substrates is provided. Nitrogen is selectively incorporated in silicon regions of a semiconductor substrate having silicon regions and silicon oxide regions by use of a selective nitridation process. Nitrogen containing radicals may be directed toward the substrate by forming a nitrogen containing plasma and filtering or removing ions from the plasma, or a thermal nitridation process using selective precursors may be performed. A remote plasma generator may be coupled to a processing chamber, optionally including one or more ion filters, showerheads, and radical distributors, or an in situ plasma may be generated and one or more ion filters or shields disposed in the chamber between the plasma generation zone and the substrate support.

公开(公告)号：WO2022025959A1

公开(公告)日：2022-02-03

申请号：PCT/US2020/063774

申请日：2020-12-08

Applicant: APPLIED MATERIALS, INC.

Inventor： LO, Kin Pong ,  NAGORNY, Vladimir ,  LIU, Wei ,  GUARINI, Theresa Kramer ,  HWANG, Bernard L. ,  BEVAN, Malcolm J. ,  ABRAHAM, Jacob ,  BEHERA, Swayambhu Prasad

IPC: H01J37/32

Abstract: Embodiments of the present disclosure generally relate to the fabrication of integrated circuits and to apparatus for use within a substrate processing chamber to improve film thickness uniformity. More specifically, the embodiments of the disclosure relate to an edge ring. The edge ring may include an overhang ring.

公开(公告)号：WO2022010599A1

公开(公告)日：2022-01-13

申请号：PCT/US2021/035639

申请日：2021-06-03

Applicant: APPLIED MATERIALS, INC.

Inventor： WU, Jian ,  HAWRYLCHAK, Lara ,  DUAN, Ren-Guan ,  HWANG, Bernard L. ,  BEVAN, Malcolm J. ,  LIU, Wei

IPC: H01J37/32 ,  H01L21/683 ,  B08B7/0035 ,  H01J2237/334 ,  H01J2237/335 ,  H01J37/3244 ,  H01J37/32495 ,  H01J37/32513 ,  H01L21/67028 ,  H01L21/67069 ,  H01L21/6833

Abstract: A method and apparatus for the use of hydrogen plasma treatments is described herein. The process chamber includes a plurality of chamber components. The plurality of chamber components may be coated with a yttrium zirconium oxide composition, such as a Y2O3-ZrO2 solid solution. Some of the plurality of chamber components are replaced with a bulk yttrium zirconium oxide ceramic. Yet other chamber components are replaced with similar components of different materials.

公开(公告)号：WO2021257317A1

公开(公告)日：2021-12-23

申请号：PCT/US2021/036280

申请日：2021-06-08

Applicant: APPLIED MATERIALS, INC.

Inventor： HUNG, Steven C. ,  COLOMBEAU, Benjamin ,  DUBE, Abhishek ,  KUNG, Sheng-Chin ,  LIU, Patricia M. ,  BEVAN, Malcolm J. ,  SWENBERG, Johanes

IPC: H01L21/225 ,  H01L21/02 ,  H01L21/311 ,  H01L21/28 ,  H01L21/8234 ,  H01L21/02236 ,  H01L21/02532 ,  H01L21/28185 ,  H01L21/28238

Abstract: Processing methods may be performed to produce semiconductor structures. The methods may include forming a silicon layer over a semiconductor substrate. The forming may include forming a silicon layer incorporating a dopant. The methods may include oxidizing a portion of the silicon layer while maintaining a portion of the silicon layer in contact with the semiconductor substrate. The oxidizing may drive a portion of the dopant through the silicon layer and into the semiconductor substrate.

公开(公告)号：WO2021086788A1

公开(公告)日：2021-05-06

申请号：PCT/US2020/057380

申请日：2020-10-26

Applicant: APPLIED MATERIALS, INC.

Inventor： HUNG, Steven C. ,  COLOMBEAU, Benjamin ,  DUBE, Abhishek ,  KUNG, Sheng-Chin ,  LIU, Patricia M. ,  BEVAN, Malcolm J. ,  SWENBERG, Johanes

IPC: H01L21/28 ,  H01L21/02 ,  H01L21/8234 ,  H01L29/51 ,  H01L29/66

Abstract: Processing methods may be performed to produce semiconductor structures that may include a high-k dielectric material. The methods may include forming a silicon layer over a semiconductor substrate. The semiconductor substrate may include silicon germanium. The methods may include oxidizing a portion of the silicon layer to form a sacrificial oxide while maintaining a portion of the silicon layer in contact with the semiconductor substrate. The methods may include removing the sacrificial oxide. The methods may include oxidizing the portion of the silicon layer in contact with the semiconductor substrate to form an oxygen-containing material. The methods may include forming a high-k dielectric material overlying the oxygen-containing material.

公开(公告)号：WO2013022530A1

公开(公告)日：2013-02-14

申请号：PCT/US2012/045046

申请日：2012-06-29

Applicant: APPLIED MATERIALS, INC. ,  ROGERS, Matthew S. ,  CURTIS, Roger ,  HAWRYLCHAK, Lara ,  LAI, Ken Kaung ,  HWANG, Bernard L. ,  TOBIN, Jeffrey ,  OLSEN, Christopher S. ,  BEVAN, Malcolm J.

Inventor： ROGERS, Matthew S. ,  CURTIS, Roger ,  HAWRYLCHAK, Lara ,  LAI, Ken Kaung ,  HWANG, Bernard L. ,  TOBIN, Jeffrey ,  OLSEN, Christopher S. ,  BEVAN, Malcolm J.

IPC: H01L21/318 ,  H01L21/3065 ,  H01L21/8247 ,  H01L27/115

CPC classification number: H01L21/28273 ,  H01J37/32357 ,  H01J37/32422 ,  H01L21/02247 ,  H01L21/02252 ,  H01L21/3211 ,  H01L27/11524

Abstract: Embodiments of the invention provide an improved apparatus and methods for nitridation of stacks of materials. In one embodiment, a remote plasma system includes a remote plasma chamber defining a first region for generating a plasma comprising ions and radicals, a process chamber defining a second region for processing a semiconductor device, the process chamber comprising an inlet port formed in a sidewall of the process chamber, the inlet port being in fluid communication with the second region, and a delivery member disposed between the remote plasma chamber and the process chamber and having a passageway in fluid communication with the first region and the inlet port, wherein the delivery member is configured such that a longitudinal axis of the passageway intersects at an angle of about 20 degrees to about 80 degrees with respect to a longitudinal axis of the inlet port.

Abstract translation: 本发明的实施例提供了一种用于氮化堆叠材料的改进的装置和方法。 在一个实施例中，远程等离子体系统包括限定用于产生包括离子和自由基的等离子体的第一区域的远程等离子体室，限定用于处理半导体器件的第二区域的处理室，所述处理室包括形成在侧壁 处理室的入口端口与第二区域流体连通，以及设置在远程等离子体室和处理室之间并具有与第一区域和入口流体连通的通道的输送构件，其中输送 构件被构造成使得通道的纵向轴线相对于入口的纵向轴线以大约20度至大约80度的角度相交。